CN109742221A - A kind of full-inorganic LED encapsulation method and encapsulating structure - Google Patents
A kind of full-inorganic LED encapsulation method and encapsulating structure Download PDFInfo
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Abstract
The present invention provides a kind of full-inorganic LED encapsulation method, include the following steps: that LED chip is placed on to clean metal box dam internal stent using bonder;Plasma clean is carried out after the completion of die bond;Spot printing silver-copper nano cream: the silver-copper nano cream is uniformly put using dispenser and is coated on the welding surface of metal box dam bracket;Preparation metallization frame quartz optical window;Low-temperature sintering solidifies: covering on the welding surface of metal box dam bracket metallization frame quartz optical window made of step 4 using bonder, then solidifies in nitrogen atmosphere or vacuum low temperature sintering;The present invention also provides the methods, and full-inorganic LED encapsulation structure is prepared.Metallization frame quartz window is connect by the invention using silver-copper nano cream with metallization bracket, is avoided using organic glue, to improve the anti-ultraviolet ageing ability of encapsulating structure, is reduced failure risk, simple process is easy to use, is suitable for large-scale production.
Description
Technical field
The present invention relates to LED encapsulation technology field, in particular to a kind of full-inorganic LED encapsulation method and encapsulating structure.
Background technique
The all different degrees of organic material using resin one kind of LED packaged type common at present is packaged.So
And organic material can cause yellow to be cracked in ultraviolet radiation, reduce LED service life.It is particularly directed to the 365nm or less that shines
Ultraviolet LED because radiation energy quantitative change is strong as wave band shortens, the resin material UV resistance of organic sharply declines, gesture
It must influence service life and the stability of ultraviolet LED.Other than ultraviolet ageing, in terms of thermodynamics, encapsulated using traditional visible light
Mode certainly exists two organic and inorganic boundary materials, and inorganic substances are smaller than the thermal expansion coefficient of organic substance very
It is more, therefore will necessarily mismatch because of material thermal expansion coefficient causes thermal stress to be concentrated, so as to cause product failure.
In addition, they have oxygen flow penetrability to varying degrees for organic materials such as epoxy resin and silica gel, cause
Wet stress and impurity invade LED encapsulation structure, increase the failure risk of device.Therefore a kind of method ten of full-inorganic encapsulation is selected
Point it is necessary to especially in ultraviolet LED encapsulation field.
Summary of the invention
It is an object of the invention to overcome the defect of the prior art, a kind of full-inorganic LED encapsulation method and encapsulation are provided
Metallization frame quartz window is connect with metallization bracket using silver-copper nano cream, is avoided using organic glue by structure, thus
The anti-ultraviolet ageing ability of encapsulating structure is improved, failure risk is reduced.Fabrication processing is simple, easy to use, is suitable for rule
Mould production is suitable for LED component and encapsulates, and the full-inorganic encapsulation of deep ultraviolet LED is especially adapted for use in, in the reliability of electronic device
There is boundless application prospect in encapsulation.
The present invention is implemented as follows:
One of the objects of the present invention is to provide a kind of full-inorganic LED encapsulation methods comprising following steps:
Step 1, LED chip die bond: LED chip is placed in clean metal box dam bracket using bonder
Portion;
Step 2, plasma clean: plasma clean is carried out after the completion of die bond;
Step 3, spot printing silver-copper nano cream: the silver-copper nano cream is uniformly put to the welding surface for being coated in metal box dam bracket
On;
Step 4, preparation metallization frame quartz optical window: select pure quartz wafer as the bottom of metallization frame quartz optical window
Material after cleaning quartz glass plate surface, carries out photoetching process, then bottom surface vapor deposition and metal box dam bracket in the quartzy optical window
The metallization frame that matches of welding surface figure, removing removes photoresist, and machine cuts are prepared into the metallization frame stone of required specification
English optical window;
Step 5, low-temperature sintering solidification: metallization frame quartz optical window made of step 4 is covered in metal using bonder
On the welding surface of box dam bracket, then solidify in nitrogen atmosphere or vacuum low temperature sintering.
Preferably, die bond material used in the step 1 is one of elargol, metal soldering paste and solid golden tin cream or more
Kind, and the heat resisting temperature of die bond material used is not less than 200 DEG C.
Preferably, the specific steps of the step 2 plasma cleaning are as follows: first cleaned using oxygen plasma, it is rear to use
Argon plasma cleans, and gas flow is greater than 5ml/min in each link, and scavenging period is greater than 120 seconds.
Preferably, in the step 3, using dispenser or the method for silk-screen printing by the uniform spot printing of silver-copper nano cream
On the welding surface of metal box dam bracket;The silver-copper nano cream with a thickness of 50~150 μm;The component of the silver-copper nano cream
The weight fraction of middle silver is 15%-25% (most preferably 20%).
Preferably, the specific steps of the photoetching process of metallization frame quartz optical window are prepared in the step 4 are as follows: revolve first
Resist coating, 1500~3000rcp of revolving speed, time 10s~25s, soft 108 DEG C of baking temperature, time 80s, with ABM contact exposure
Machine uv-exposure 4s, rear to dry 108 DEG C of temperature, time 200s, developer for negative photoresist development 70s, 100 DEG C of 10~20min of time of post bake.
Preferably, evaporation metal frame in the step 4, metal system Ti/Al/Ti/Pt/Ti/Pt/Au are typical
Every layer of metal thickness be
Preferably, in the step 4 stripping technology specific steps are as follows: removed photoresist after 10s with acetone, go glue clear with 90 DEG C
10min is washed, rear acetone ultrasonic cleaning 5min is repeated once, isopropanol is cleaned by ultrasonic 2min, and deionized water rinses 10min, finally
Dryer drying.
Preferably, curing process is divided into the step 5: being rapidly heated the stage, is risen to 10 DEG C/min rate by room temperature
120℃;Activation stage, is kept for 5 minutes by 120 DEG C;Temperature rise period rises to 160 DEG C by 120 DEG C with 10 DEG C/min of rates;Micro- burning
The knot stage, is kept for 10 minutes by 160 DEG C.
The second object of the present invention is the provision of a kind of full-inorganic LED encapsulation structure, including metallization frame quartz light
Window, silver-copper nano cream, LED chip and metal box dam bracket, the LED chip is in metal box dam carriage center, the gold
Categoryization frame quartz optical window is located on the metal box dam bracket, and the metal box dam bracket passes through the silver-copper nano cream
Mutually welded with the metallization frame quartz optical window: the upper surface of the metal box dam bracket be plane as with the gold
The welding surface of the welding surface of categoryization frame quartz optical window, the metal box dam bracket is equipped with the silver-copper nano cream, the gold
The bottom-side metal frame and the figure of the welding surface of the metal box dam bracket of categoryization frame quartz optical window match.
Compared with prior art, the invention has the following advantages:
1, a kind of full-inorganic LED encapsulation method provided by the invention, including LED chip die bond, plasma clean, spot printing
Silver-copper nano cream, preparation metallization frame quartz optical window, low-temperature sintering solidification, will metallization frame quartz using silver-copper nano cream
Window is connect with metallization bracket, is avoided using organic glue, to improve the anti-ultraviolet ageing ability of encapsulating structure, is reduced and is lost
Imitate risk.Fabrication processing is simple, easy to use, is suitable for large-scale production, is suitable for LED component and encapsulates, is especially applicable in
It is encapsulated in the full-inorganic of deep ultraviolet LED, there is boundless application prospect in the reliability encapsulation of electronic device.
2, weight silver-colored in the component of silver-copper nano cream used in a kind of full-inorganic LED encapsulation method provided by the invention
Score is 15%-25% (being preferably 20%), and the copper nano particles are excellent as having after the sintering curing of silver nano-grain
Elegant mechanical performance, shear strength are greater than 10Mpa, and the fabulous non-volatile object of air-tightness, with the phases such as prefabricated weld tabs, brazing metal
Than being the ideal bonding material as metallization frame quartz optical window welding.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of full-inorganic LED encapsulation structure provided in an embodiment of the present invention;
Fig. 2 is the schematic diagram of the section structure of full-inorganic LED encapsulation structure provided in an embodiment of the present invention;
Fig. 3 is the structure of the metallization frame quartz optical window in full-inorganic LED encapsulation structure provided in an embodiment of the present invention
Schematic diagram;
In Fig. 1-Fig. 3,1, metallization frame quartz optical window;12, metallize frame;2, silver-copper nano cream;3, LED chip,
4, metal box dam bracket.
Specific embodiment
Embodiment 1
As shown in Figure 1-Figure 3, the embodiment of the present invention provides a kind of full-inorganic LED encapsulation structure, including metallization frame stone
English optical window 1, silver-copper nano cream 2, LED chip 3 and metal box dam bracket 4, the LED chip 3 are located at 4 center of metal box dam bracket
Interior, the metallization frame quartz optical window 1 is located on the metal box dam bracket 4, and the metal box dam bracket 4 passes through institute
State silver-copper nano cream 2 to weld with metallization 1 phase of frame quartz optical window: the upper surface of the metal box dam bracket 4 is one
Plane is equipped with the silver as the welding surface with the metallization frame quartz optical window, the welding surface of the metal box dam bracket
Copper nanometer cream 2, the welding of the bottom-side metal frame 21 and the metal box dam bracket 4 of the metallization frame quartz optical window 1
The figure in face matches.
The packaging method of above-mentioned full-inorganic LED encapsulation structure, including LED chip die bond, plasma clean, spot printing silver-bearing copper
The processing steps such as nanometer cream, preparation metallization frame quartz optical window, low-temperature sintering solidification, specific as follows:
Step 1, LED chip die bond: in LED chip die bond, LED chip is placed on using bonder clean
Metal box dam internal stent, die bond material can be used elargol, metal soldering paste and Sn/Au eutectic encapsulation, it is desirable that heat resisting temperature
Not less than 200 DEG C;
Step 2, plasma clean: being carried out plasma clean after the completion of die bond, first cleaned using oxygen plasma, after
It is cleaned with argon plasma, gas flow is greater than 5ml/min in each link, and scavenging period is greater than 120 seconds;
Step 3, spot printing silver-copper nano cream: dispenser spot printing silver-copper nano cream is used, by the uniform point of the silver-copper nano cream
It is coated on the welding surface of metal box dam bracket, lotion is with a thickness of 50 μm, silver-colored weight fraction in the component of the silver-copper nano cream
It is 15%;
Step 4, preparation metallization frame quartz optical window:
(1) select the pure quartz wafer of 2 inch diameters as the ground of metallization frame quartz optical window, with a thickness of 0.5 millimeter;
(2) clean quartz glass plate surface with organic reagent depth, remove it is remained on surface it is dirty after use argon plasma
Clean 120s;
(3) photoetching process, first spin coating photoresist (for example, star Tyke 1306A), 1500~3000rcp of revolving speed, time
10s~25s, soft 108 DEG C of baking temperature, time 80s, rear to dry 108 DEG C of temperature with ABM contact exposure machine uv-exposure 4s, time
200s, developer for negative photoresist development 70s, 100 DEG C of 10~20min of time of post bake;
(4) metal evaporation uses electron beam evaporation equipment, evaporation metal frame, metal system Ti/Al/Ti/Pt/
Ti/Pt/Au, every layer of metal thickness are
(5) stripping technology is removed photoresist after 10s with acetone, goes glue to clean 10min with 90 DEG C, is repeated once rear acetone ultrasound
5min is cleaned, isopropanol is cleaned by ultrasonic 2min, and deionized water rinses 10min, last dryer drying;
(6) machine cuts cut the pure quartz wafer of 2 inch diameters according to the spacing of metallization frame quartz optical window
It is disconnected, it is prepared into the metallization frame quartz optical window of 3.5mm × 3.5mm.
Step 5, low-temperature sintering solidification: metallization frame quartz optical window made of step 4 is covered in metal using bonder
On the welding surface of box dam bracket, then solidify in nitrogen atmosphere or vacuum low temperature sintering;Curing process is divided into: quickly rising
Thermophase rises to 120 DEG C by room temperature with 10 DEG C/min rate;Activation stage, is kept for 5 minutes by 120 DEG C;Temperature rise period, with 10
DEG C/min rate rises to 160 DEG C by 120 DEG C;Micro- sintering stage, is kept for 10 minutes by 160 DEG C.
Embodiment 2
As shown in Figure 1-Figure 3, the embodiment of the present invention provides a kind of feature of full-inorganic LED encapsulation structure in structure with real
Apply example 1.The difference is that preparation method is different:
The packaging method of full-inorganic LED encapsulation structure provided in an embodiment of the present invention, including LED chip die bond, plasma
The processing steps such as body cleaning, spot printing silver-copper nano cream, preparation metallization frame quartz optical window, low-temperature sintering solidification are (with embodiment 1
Difference be step 3 part), it is specific as follows:
Step 1, LED chip die bond: in LED chip die bond, LED chip is placed on using bonder clean
Metal box dam internal stent, die bond material can be used elargol, metal soldering paste and Sn/Au eutectic encapsulation, it is desirable that heat resisting temperature
Not less than 200 DEG C;
Step 2, plasma clean: being carried out plasma clean after the completion of die bond, first cleaned using oxygen plasma, after
It is cleaned with argon plasma, gas flow is greater than 5ml/min in each link, and scavenging period is greater than 120 seconds;
Step 3, spot printing silver-copper nano cream: dispenser spot printing silver-copper nano cream is used, by the uniform point of the silver-copper nano cream
It is coated on the welding surface of metal box dam bracket, lotion is with a thickness of 100 μm, silver-colored weight fraction in the component of the silver-copper nano cream
It is 20%;
Step 4, preparation metallization frame quartz optical window:
(1) select the pure quartz wafer of 2 inch diameters as the ground of metallization frame quartz optical window, with a thickness of 0.5 millimeter;
(2) clean quartz glass plate surface with organic reagent depth, remove it is remained on surface it is dirty after use argon plasma
Clean 120s;
(3) photoetching process, first spin coating photoresist (for example, star Tyke 1306A), 1500~3000rcp of revolving speed, time
10s~25s, soft 108 DEG C of baking temperature, time 80s, rear to dry 108 DEG C of temperature with ABM contact exposure machine uv-exposure 4s, time
200s, developer for negative photoresist development 70s, 100 DEG C of 10~20min of time of post bake;
(4) metal evaporation uses electron beam evaporation equipment, evaporation metal frame, metal system Ti/Al/Ti/Pt/
Ti/Pt/Au, every layer of metal thickness are
(5) stripping technology is removed photoresist after 10s with acetone, goes glue to clean 10min with 90 DEG C, is repeated once rear acetone ultrasound
5min is cleaned, isopropanol is cleaned by ultrasonic 2min, and deionized water rinses 10min, last dryer drying;
(6) machine cuts cut the pure quartz wafer of 2 inch diameters according to the spacing of metallization frame quartz optical window
It is disconnected, it is prepared into the metallization frame quartz optical window of 3.5mm × 3.5mm.
Step 5, low-temperature sintering solidification: metallization frame quartz optical window made of step 4 is covered in metal using bonder
On the welding surface of box dam bracket, then solidify in nitrogen atmosphere or vacuum low temperature sintering;Curing process is divided into: quickly rising
Thermophase rises to 120 DEG C by room temperature with 10 DEG C/min rate;Activation stage, is kept for 5 minutes by 120 DEG C;Temperature rise period, with 10
DEG C/min rate rises to 160 DEG C by 120 DEG C;Micro- sintering stage, is kept for 10 minutes by 160 DEG C.
Embodiment 3
As shown in Figure 1-Figure 3, the embodiment of the present invention provides a kind of feature of full-inorganic LED encapsulation structure in structure with real
Example 1 is applied, the difference is that preparation method is different:
The packaging method of full-inorganic LED encapsulation structure provided in an embodiment of the present invention, including LED chip die bond, plasma
The processing steps such as body cleaning, spot printing silver-copper nano cream, preparation metallization frame quartz optical window, low-temperature sintering solidification are (with embodiment 1
Difference be step 3 part), it is specific as follows:
Step 1, LED chip die bond: in LED chip die bond, LED chip is placed on using bonder clean
Metal box dam internal stent, die bond material can be used elargol, metal soldering paste and Sn/Au eutectic encapsulation, it is desirable that heat resisting temperature
Not less than 200 DEG C;
Step 2, plasma clean: being carried out plasma clean after the completion of die bond, first cleaned using oxygen plasma, after
It is cleaned with argon plasma, gas flow is greater than 5ml/min in each link, and scavenging period is greater than 120 seconds;
Step 3, spot printing silver-copper nano cream: dispenser spot printing silver-copper nano cream is used, by the uniform point of the silver-copper nano cream
It is coated on the welding surface of metal box dam bracket, lotion is with a thickness of 150 μm, silver-colored weight fraction in the component of the silver-copper nano cream
It is 30%;
Step 4, preparation metallization frame quartz optical window:
(1) select the pure quartz wafer of 2 inch diameters as the ground of metallization frame quartz optical window, with a thickness of 0.5 millimeter;
(2) clean quartz glass plate surface with organic reagent depth, remove it is remained on surface it is dirty after use argon plasma
Clean 120s;
(3) photoetching process, first spin coating photoresist (for example, star Tyke 1306A), 1500~3000rcp of revolving speed, time
10s~25s, soft 108 DEG C of baking temperature, time 80s, rear to dry 108 DEG C of temperature with ABM contact exposure machine uv-exposure 4s, time
200s, developer for negative photoresist development 70s, 100 DEG C of 10~20min of time of post bake;
(4) metal evaporation uses electron beam evaporation equipment, evaporation metal frame, metal system Ti/Al/Ti/Pt/
Ti/Pt/Au, every layer of metal thickness are
(5) stripping technology is removed photoresist after 10s with acetone, goes glue to clean 10min with 90 DEG C, is repeated once rear acetone ultrasound
5min is cleaned, isopropanol is cleaned by ultrasonic 2min, and deionized water rinses 10min, last dryer drying;
(6) machine cuts cut the pure quartz wafer of 2 inch diameters according to the spacing of metallization frame quartz optical window
It is disconnected, it is prepared into the metallization frame quartz optical window of 3.5mm × 3.5mm.
Step 5, low-temperature sintering solidification: metallization frame quartz optical window made of step 4 is covered in metal using bonder
On the welding surface of box dam bracket, then solidify in nitrogen atmosphere or vacuum low temperature sintering;Curing process is divided into: quickly rising
Thermophase rises to 120 DEG C by room temperature with 10 DEG C/min rate;Activation stage, is kept for 5 minutes by 120 DEG C;Temperature rise period, with 10
DEG C/min rate rises to 160 DEG C by 120 DEG C;Micro- sintering stage, is kept for 10 minutes by 160 DEG C.
Comparative example 1: for the encapsulating structure for the LED that traditional visible light packaged type is prepared.
Comparative example 2: silver-colored weight fraction is 14% in the component of the silver-copper nano cream used, remaining is same as Example 1.
Comparative example 3: silver-colored weight fraction is 5% in the component of the silver-copper nano cream used.Remaining is same as Example 1.
Comparative example 4: silver-colored weight fraction is 26% in the component of the silver-copper nano cream used.Remaining is same as Example 1.
Comparative example 5: silver-colored weight fraction is 40% in the component of the silver-copper nano cream used.Remaining is same as Example 1.
Experimental example
1, shear strength test
Sample is single bridging arrangement, applies longitudinal stretching shearing force on the faying surface of sample, and measurement sample can be born
Peak load.Average shearing stress on faying surface is the metallization branch of silver-copper nano cream) to metallization frame quartz optical window overlap joint
Tensile shear strength, unit MPa, experimental result is as shown in table 1:
Table 1
Project | Shear strength |
Embodiment 1 | 12Mpa |
Embodiment 2 | 15Mpa |
Embodiment 3 | 13Mpa |
Comparative example 1 | 5Mpa |
Comparative example 2 | 8Mpa |
Comparative example 3 | 6Mpa |
Comparative example 4 | 9Mpa |
Comparative example 5 | 7Mpa |
As shown in Table 1, a kind of shear strength for full-inorganic LED encapsulation structure that embodiment 1-3 is provided is all larger than comparative example;
Silver-colored weight fraction is 15% in the component of silver-copper nano cream used in a kind of full-inorganic LED encapsulation method provided by the invention
(embodiment 1) -25% (embodiment 3), and its shear strength of embodiment 2 (20%) is maximum, is 15Mpa, is most preferred embodiment, by
Silver-colored weight fraction is preferably 20% in the component of the silver-copper nano cream used known to this.
2, air tightness test
Red ink experiment: by 1-3 of the embodiment of the present invention full-inorganic LED encapsulation structure (experimental group) provided and comparison
The LED encapsulation structure (control group) of example 1-5, is put in together in the beaker of red ink, and a period of time is boiled in heating, observes red ink
Whether water penetrates into colloid.
Table 2
Project | Red ink experimental result |
Embodiment 1 | Colloid is colourless |
Embodiment 2 | Colloid is colourless |
Embodiment 3 | Colloid is colourless |
Comparative example 1 | Most of colloid is red-dyed |
Comparative example 2 | Fraction colloid is red-dyed |
Comparative example 3 | One hemicolloid is red-dyed |
Comparative example 4 | Fraction colloid is red-dyed |
Comparative example 5 | Fraction colloid is red-dyed |
A kind of full-inorganic LED encapsulation structure that 1-3 of the embodiment of the present invention is provided colloid after red ink is tested remains as
It is colourless;And the colloid of the LED encapsulation structure (control group) of comparative example 1-5 can be red-dyed;The red ink experimental verification present invention mentions
A kind of air-tightness of the full-inorganic LED encapsulation structure supplied is fabulous, increases the airtight reliability of lamp bead.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of full-inorganic LED encapsulation method, which comprises the steps of:
Step 1, LED chip die bond: LED chip is placed on to clean metal box dam internal stent using bonder;
Step 2, plasma clean: plasma clean is carried out after the completion of die bond;
Step 3, spot printing silver-copper nano cream: the silver-copper nano cream is uniformly put and is coated on the welding surface of metal box dam bracket;
Step 4, preparation metallization frame quartz optical window: select pure quartz wafer as metallize frame quartz optical window ground,
After cleaning quartz glass plate surface, photoetching process, then bottom surface vapor deposition and metal box dam bracket in the quartzy optical window are carried out
The metallization frame that welding surface figure matches, removing are removed photoresist, and machine cuts are prepared into the metallization frame quartz of required specification
Optical window;
Step 5, low-temperature sintering solidification: metallization frame quartz optical window made of step 4 is covered in metal box dam using bonder
On the welding surface of bracket, then solidify in nitrogen atmosphere or vacuum low temperature sintering.
2. full-inorganic LED encapsulation method as described in claim 1, which is characterized in that die bond material used in the step 1
Heat resisting temperature for one of elargol, metal soldering paste and solid golden tin cream or a variety of and used die bond materials is not less than 200
℃。
3. full-inorganic LED encapsulation method as described in claim 1, which is characterized in that the step 2 plasma cleaning
Specific steps are as follows: first cleaned using oxygen plasma, after cleaned with argon plasma, in each link gas flow be greater than 5ml/
Min, scavenging period are greater than 120 seconds.
4. full-inorganic LED encapsulation method as described in claim 1, which is characterized in that in the step 3, using dispenser or
The silver-copper nano cream is uniformly put and is coated on the welding surface of metal box dam bracket by the method for silk-screen printing;The silver-copper nano cream
With a thickness of 50~150 μm;Silver-colored weight fraction is 15%-25% in the component of the silver-copper nano cream.
5. full-inorganic LED encapsulation method as claimed in claim 4, which is characterized in that silver-colored in the component of the silver-copper nano cream
Weight fraction be 20%.
6. full-inorganic LED encapsulation method as described in claim 1, which is characterized in that preparation metallization frame in the step 4
The specific steps of the photoetching process of quartzy optical window are as follows: spin coating photoresist first, 1500~3000rcp of revolving speed, time 10s~25s,
It is soft 108 DEG C of baking temperature, time 80s, rear to dry 108 DEG C of temperature, time 200s with ABM contact exposure machine uv-exposure 4s, negtive photoresist
Developing liquid developing 70s, 100 DEG C of 10~20min of time of post bake.
7. full-inorganic LED encapsulation method as described in claim 1, which is characterized in that evaporation metal side in the step 4
Frame, metal system Ti/Al/Ti/Pt/Ti/Pt/Au, typical every layer of metal thickness are
8. full-inorganic LED encapsulation method as described in claim 1, which is characterized in that stripping technology is specific in the step 4
Step are as follows: removed photoresist after 10s with acetone, go glue to clean 10min with 90 DEG C, be repeated once rear acetone ultrasonic cleaning 5min, isopropyl
Alcohol is cleaned by ultrasonic 2min, and deionized water rinses 10min, last dryer drying.
9. full-inorganic LED encapsulation method as described in claim 1, which is characterized in that curing process is divided into the step 5:
It is rapidly heated the stage, rises to 120 DEG C by room temperature with 10 DEG C/min rate;Activation stage, is kept for 5 minutes by 120 DEG C;Temperature rise period,
160 DEG C are risen to by 120 DEG C with 10 DEG C/min of rates;Micro- sintering stage, is kept for 10 minutes by 160 DEG C.
10. a kind of full-inorganic LED encapsulation structure as made from claim 1-9 any the method, which is characterized in that including gold
Categoryization frame quartz optical window, silver-copper nano cream, LED chip and metal box dam bracket, the LED chip is in metal box dam bracket
In center, the metallization frame quartz optical window is located on the metal box dam bracket, and the metal box dam bracket passes through
The silver-copper nano cream is mutually welded with the metallization frame quartz optical window: the upper surface of the metal box dam bracket is one flat
Face is equipped with the silver-bearing copper as the welding surface with the metallization frame quartz optical window, the welding surface of the metal box dam bracket
Nanometer cream, the figure of the welding surface of the bottom-side metal frame and metal box dam bracket of the metallization frame quartz optical window
Match.
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