CN108777434B - Vertical cavity surface emitting laser and electronic equipment - Google Patents
Vertical cavity surface emitting laser and electronic equipment Download PDFInfo
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- CN108777434B CN108777434B CN201810462553.7A CN201810462553A CN108777434B CN 108777434 B CN108777434 B CN 108777434B CN 201810462553 A CN201810462553 A CN 201810462553A CN 108777434 B CN108777434 B CN 108777434B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a vertical cavity surface emitting laser and an electronic device, which comprise a laser substrate, a driving chip, M laser beads and N MOS (metal oxide semiconductor) tubes, wherein the first poles of the M laser beads are electrically connected with the first pole of the laser substrate, and the first poles of the laser beads are the same as the first pole of the laser substrate in polarity; the grid electrode of one MOS tube is electrically connected with one driving pin corresponding to the driving chip, one of the drain electrode and the source electrode of the MOS tube is electrically connected with the second pole of the laser substrate, and the other pole of the MOS tube is electrically connected with the second pole of one laser lamp bead; the second pole of the laser substrate has the same polarity as the second pole of the laser lamp bead. Therefore, the vertical cavity surface emitting laser provided by the invention can selectively control the on and off of the required number of laser beads, so that the vertical cavity surface emitting laser can switch the power mode at will, and the problem of high power consumption caused by the fact that the vertical cavity surface emitting laser is always in a high-power mode in the prior art is effectively solved.
Description
Technical Field
The embodiment of the invention relates to the technical field of lasers, in particular to a vertical cavity surface emitting laser and electronic equipment.
Background
Vertical Cavity Surface Emitting Lasers (VCSELs) are developed on the basis of gallium arsenide semiconductor materials, have the advantages of small volume, circular output light spots, single longitudinal mode output, small threshold current, low price, easy integration into large-area arrays and the like, and can be widely applied to the fields of optical communication, optical interconnection, optical storage and the like.
the current VCSEL microstructure is as follows: as shown in fig. 1, a laser bead 1 is generated in a wafer through a laser manufacturing process, anodes of all the laser beads 1 are connected in parallel in the wafer through gold wires, the wafer is packaged on a VCSEL module substrate 2, and the anodes are connected to the anodes in the VCSEL module substrate 2 through the gold wires.
The anodes of all lamp beads of the existing VCSEL are connected to the anode of the VCSEL module substrate, and the cathodes of all the lamp beads are connected to the cathode of the VCSEL module substrate. Once the VCSEL module is turned on, all the lamp beads are lightened. The current required by the turn-on of each lamp bead is usually 1-3 mA, and a common VCSEL module usually has hundreds of lamp beads, so that the turn-on current of the VCSEL module at least needs hundreds of mA, and low power consumption is not easy to achieve for mobile equipment adopting the VCSEL.
Disclosure of Invention
The embodiment of the invention provides a vertical cavity surface emitting laser and an electronic device, which are used for solving the problem that the power consumption of the conventional vertical cavity surface emitting laser is high.
In order to solve the technical problem, the invention is realized as follows: in a first aspect, the present invention provides a vertical cavity surface emitting laser, comprising:
A laser substrate having a first pole and a second pole;
The driving chip is provided with at least N driving pins, and N is a positive integer greater than 1;
The first poles of the M laser lamp beads are electrically connected with the first pole of the laser substrate, the first poles of the laser lamp beads are the same as the first pole of the laser substrate in polarity, and M is a positive integer greater than 1;
The N MOS tubes correspond to the at least N driving pins one to one, a grid electrode of one MOS tube is electrically connected with one driving pin corresponding to the driving chip, one pole of a drain electrode and a source electrode of one MOS tube is electrically connected with a second pole of the laser substrate, the other pole of the drain electrode and the source electrode of the MOS tube is electrically connected with the second pole of one laser lamp bead, and the second pole of the laser substrate and the second pole of the laser lamp bead have the same polarity;
The driving chip is used for providing a high level or a low level for the grid electrode of the MOS tube, and controlling the on or off of the MOS tube so as to control the on or off of the laser lamp bead connected with the MOS tube.
in a second aspect, the present invention provides an electronic device comprising: the vertical cavity surface emitting laser described above.
The embodiment of the invention adopts at least one technical scheme which can achieve the following beneficial effects:
The vertical cavity surface emitting laser provided by the embodiment of the invention comprises a laser substrate, a driving chip, M laser beads and N MOS (metal oxide semiconductor) tubes, wherein the first poles of the M laser beads are electrically connected with the first pole of the laser substrate, and the first poles of the laser beads are the same as the first pole of the laser substrate in polarity; the N MOS tubes correspond to the at least N driving pins one to one, the grid electrode of one MOS tube is electrically connected with one driving pin corresponding to the driving chip, one pole of the drain electrode and the source electrode of one MOS tube is electrically connected with the second pole of the laser substrate, the other pole of the drain electrode and the source electrode of one MOS tube is electrically connected with the second pole of one laser lamp bead, and the second pole of the laser substrate and the second pole of the laser lamp bead have the same polarity; the driving chip is used for providing a high level or a low level for the grid electrode of the MOS tube, and controls the on or off of the MOS tube so as to control the on or off of the laser lamp bead connected with the MOS tube. Therefore, the vertical cavity surface emitting laser provided by the invention can selectively control the on and off of the required number of laser beads, so that the vertical cavity surface emitting laser can switch the power mode at will, and the problem of high power consumption caused by the fact that the vertical cavity surface emitting laser is always in a high-power mode in the prior art is effectively solved.
drawings
FIG. 1 is a schematic diagram of a prior art VCSEL structure;
FIG. 2 is a schematic structural diagram of a VCSEL according to an embodiment of the invention;
fig. 3 is a second schematic structural diagram of a vertical cavity surface emitting laser according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The vertical cavity surface emitting laser provided by the embodiment of the invention comprises: the laser substrate 10, the driving chip 20, the M laser beads 30 and the N MOS transistors 40 and M, N are all positive integers greater than 1. The following respectively describes in detail the connection relationship and the working relationship among the laser substrate 10, the driving chip 20, the M laser beads 30, and the N MOS tubes 40, specifically as follows:
the laser substrate 10 is used for packaging M laser beads 30, and the M laser beads 30 are generated on a wafer through a laser manufacturing process. The laser substrate 10 has a first pole and a second pole. Wherein the first electrode is a cathode and the second electrode is an anode; alternatively, the first electrode is an anode and the second electrode is a cathode.
The first utmost point of M laser lamp pearl 30 is connected with the first utmost point of laser base plate 10, and the first utmost point of laser lamp pearl 30 is the same with the polarity of the first utmost point of laser base plate 10. In specific implementation, the number of the laser beads 30 may be 200 to 800, for example.
the N MOS transistors 40 correspond to at least N driving pins 21 of the driving chip 20 one to one, a gate of one MOS transistor 40 is electrically connected to one driving pin 21 of the driving chip 20, one of a drain and a source of one MOS transistor 40 is electrically connected to a second pole of the laser substrate 10, the other pole is electrically connected to a second pole of one laser bead 30, and the second pole of the laser substrate 10 and the second pole of the laser bead 30 have the same polarity. The MOS transistor 40 is an MOS transistor with the minimum equivalent capacitance, the minimum on-resistance, and the highest turn-on speed.
The driving chip 20 is used for providing a high level or a low level for the grid of the MOS tube 40, and controlling the on/off of the MOS tube 40 so as to control the on/off of the laser lamp bead 30 connected with the MOS tube 40. In specific implementation, any one of the driver chips 20 capable of implementing the above functions may be adopted as the driver chip 20, and the embodiment of the present invention is not particularly limited.
In practical applications, as an example, there are the following in face recognition: and confirming whether the human face exists or not and extracting the human face characteristic points.
When the mode is used for determining whether a human face exists, the vertical cavity surface emitting laser provided by the embodiment of the invention can adopt a low-current driving mode (namely a low-power mode) because the human face contour needs to be collected without detail features. Specifically, dozens of hundreds of laser beads are selected to be lighted, and the driving current configuration of the vertical cavity surface emitting laser is about 100mA, so that the requirement can be met.
When the vertical cavity surface emitting laser is in a working mode of extracting the human face characteristic points, the requirement on human face details is high due to the fact that the human face detail characteristic points need to be collected, and in order to guarantee sufficient brightness, the vertical cavity surface emitting laser provided by the embodiment of the invention can be in a high-power mode. Specifically, hundreds of laser lamp beads are lighted, that is, all the lamp beads are configured to be in a lighting state, and then the configuration of the driving current of the vertical cavity surface emitting laser is about more than 1A, so that enough light intensity can be ensured.
therefore, for the switching of two working modes in face recognition, the vertical cavity surface emitting laser provided by the embodiment of the invention can avoid that the vertical cavity surface emitting laser is in a high-power mode for a long time, so that the mobile equipment with the vertical cavity surface emitting laser works in a high-power state for a long time, thereby greatly reducing the power consumption. Meanwhile, linear switching between a high-power mode and a low-power mode is realized, so that the driving mode is more flexible.
Further, the MOS transistor 40 in the above embodiment may be divided into a P-channel MOS transistor and an N-channel MOS transistor, and for different MOS transistors, the vertical cavity surface emitting laser has different structures and different working principles, which are specifically as follows:
In the first structure, if the MOS transistors 40 are N-channel enhancement type MOS transistors, the second pole of the laser substrate 10 and the second pole of the laser bead 30 are both the cathode, the gate of each MOS transistor 40 is electrically connected to one of the driving pins 21, the source of each MOS transistor 40 is electrically connected to the cathode of the laser substrate 10, and the drain of each MOS transistor 40 is electrically connected to the cathode of one of the laser beads 30.
As shown in fig. 2, the operating principle of the vertical cavity surface emitting laser of the first structure is as follows: the driving chip 20 provides a high level to the gate of the MOS transistor 40 electrically connected to the first part driving pin 21, the MOS transistor 40 is turned on, and a current flows from the anode of the laser bead 30 to the cathode of the laser substrate 10 through the drain-source of the MOS transistor 40, at this time, the laser bead 30 corresponding to the MOS transistor 40 electrically connected to the first part driving pin 21 is turned on; the driving chip 20 provides a low level to the gate of the MOS transistor 40 electrically connected to the second part driving pin 21, the MOS transistor 40 is turned off, and at this time, the laser bead 30 corresponding to the MOS transistor 40 electrically connected to the second part driving pin 21 is turned off. The first part and the second part are different parts, and the ratio of the first part to the second part may be arbitrary, and the embodiment of the present invention is not particularly limited.
In the second structure, if the MOS transistor 40 is an N-channel enhancement type MOS transistor, the second pole of the laser substrate 10 and the second pole of the laser bead 30 are both anodes, the gate of each MOS transistor 40 is electrically connected to one of the driving pins 21, the source of each MOS transistor 40 is electrically connected to the anode of one of the laser beads 30, and the drain of each MOS transistor 40 is electrically connected to the anode of the laser substrate 10.
as shown in fig. 3, the operating principle of the vertical cavity surface emitting laser of the second structure is as follows: the driving chip 20 provides a high level to the gate of the MOS transistor 40 electrically connected to the third part driving pin 21, the MOS transistor 40 is turned on, and a current flows from the anode of the laser substrate 10 through the drain-source of the MOS transistor 40 to the cathode of the laser bead 30, at this time, the laser bead 30 corresponding to the MOS transistor 40 electrically connected to the third part driving pin 21 is turned on; the driving chip 20 provides a low level to the gate of the MOS transistor 40 electrically connected to the fourth portion driving pin 21, the MOS transistor 40 is turned off, and at this time, the laser lamp bead 30 corresponding to the MOS transistor 40 electrically connected to the fourth portion driving pin 21 is turned off. The third portion and the fourth portion are different portions, and the ratio of the third portion to the fourth portion may be arbitrary, which is not specifically limited in the embodiments of the present invention.
In the third structure, if the MOS transistor is a P-channel enhanced MOS transistor, the second pole of the laser substrate 10 and the second pole of the laser bead 30 are both cathodes, the gate of each MOS transistor is electrically connected to one driving pin, the drain of each MOS transistor is electrically connected to the cathode of the laser substrate, and the source of each MOS transistor is electrically connected to the cathode of one laser bead.
The operating principle of the vertical cavity surface emitting laser with the third structure is as follows: the driving chip provides a low level for a grid electrode of the MOS tube electrically connected with the driving pin of the fifth part, the MOS tube is conducted, current flows from an anode of the laser lamp bead to a source drain electrode of the MOS tube to a cathode of the laser substrate, and at the moment, the laser lamp bead corresponding to the MOS tube electrically connected with the driving pin of the fifth part is lightened; the driving chip provides a high level for the grid electrode of the MOS tube electrically connected with the driving pin of the sixth part, the MOS tube is cut off, and at the moment, the laser lamp bead corresponding to the MOS tube electrically connected with the driving pin of the sixth part is turned off. The fifth part and the sixth part are different parts, and the ratio of the fifth part to the sixth part may be arbitrary, and the embodiment of the present invention is not particularly limited.
In the fourth structure, if the MOS transistor is a P-channel enhanced MOS transistor, the second pole of the laser substrate 10 and the second pole of the laser bead 30 are both anodes, the gate of each MOS transistor is electrically connected to one driving pin, the drain of each MOS transistor is electrically connected to the anode of one laser bead, and the source of each MOS transistor is electrically connected to the anode of the laser substrate.
The operating principle of the vertical cavity surface emitting laser with the fourth structure is as follows: the driving chip provides a low level for a grid electrode of the MOS tube electrically connected with the seventh part of driving pins, the MOS tube is conducted, current flows through a source drain electrode of the MOS tube from an anode of the laser substrate to a cathode of the laser lamp bead, and at the moment, the laser lamp bead corresponding to the MOS tube electrically connected with the seventh part of driving pins is lightened; the drive chip provides the high level to the grid of the MOS pipe of being connected with eighth part drive pin electricity, and this MOS pipe ends, and at this moment, the laser lamp pearl that the MOS pipe that is connected with eighth part drive pin electricity corresponds closes. The seventh part and the eighth part are different parts, and the ratio of the seventh part to the eighth part may be arbitrary, and the embodiment of the present invention is not particularly limited.
In the embodiment of the present invention, the corresponding relationship between the total current of the vertical cavity surface emitting laser and the number of the lighted laser beads may be: the total current of the vertical cavity surface emitting laser is larger than or equal to the product of the turn-on current of the laser lamp beads and the lighting number of the laser lamp beads. According to the embodiment of the invention, the total current of the vertical cavity surface emitting laser can be controlled by controlling the lighting quantity of the laser beads, so that the power of the vertical cavity surface emitting laser is controlled. That is to say, the number of the lighted laser beads can be obtained according to the total current required by the vertical cavity surface emitting laser and the turn-on current of the laser beads in the embodiment of the invention.
Furthermore, in order to enable the illuminated laser lamp beads to be uniformly distributed, the M laser lamp beads in the embodiment of the invention are uniformly arranged on the wafer through a laser manufacturing process, and the position information of each laser lamp bead on the wafer is pre-stored in the driving chip.
after the number of the laser beads required to be lighted is obtained according to the corresponding relation between the total current of the vertical cavity surface emitting laser and the number of the laser beads required to be lighted in the embodiment of the invention, the driving chip can selectively control the on or off of the laser beads electrically connected with the MOS tube according to the pre-stored position information and the number of the laser beads required to be lighted, so that the lighted laser beads are uniformly distributed.
preferably, in order to better ensure the uniformity, after the number of the laser beads required to be lit is determined in the embodiment of the present invention, the driving chip is further configured to select a pre-lighting region, and selectively control the laser beads 30 electrically connected to the MOS transistor to be lit in the pre-lighting region according to the position information and the number of the laser beads required to be lit, so that the laser beads required to be lit are uniformly distributed in the pre-lighting region.
Further, the total current of the vertical cavity surface emitting laser in the embodiment of the invention is less than or equal to the product of the maximum bearable current of the laser beads and the total number of the laser beads, so that the vertical cavity surface emitting laser is ensured to be in a normal working state, the vertical cavity surface emitting laser is effectively prevented from being burnt out, and the service life of the vertical cavity surface emitting laser is ensured.
Furthermore, the number of the laser lamp beads in the embodiment of the invention is consistent with that of the MOS tubes, so that the plurality of laser lamp beads correspond to the plurality of MOS tubes one by one, each MOS tube can control the on/off of one laser lamp bead, and the guarantee is provided for realizing that the vertical cavity surface emitting laser can switch power modes at will.
The above is a vertical cavity surface emitting laser provided by the present invention, and based on the vertical cavity surface emitting laser, an embodiment of the present invention further provides an electronic device, including the vertical cavity surface emitting laser described in the above embodiment of the present invention.
the vertical cavity surface emitting laser provided by the embodiment of the invention comprises a laser substrate, a driving chip, M laser beads and N MOS (metal oxide semiconductor) tubes, wherein the first poles of the M laser beads are electrically connected with the first pole of the laser substrate, and the first poles of the laser beads are the same as the first pole of the laser substrate in polarity; the N MOS tubes correspond to the at least N driving pins one to one, the grid electrode of one MOS tube is connected with one driving pin of the driving chip, one of the drain electrode and the source electrode of one MOS tube is electrically connected with the second pole of the laser substrate, the other pole of the MOS tube is electrically connected with the second pole of one laser lamp bead, and the second pole of the laser substrate and the second pole of the laser lamp bead have the same polarity; the driving chip is used for providing a high level or a low level for the grid electrode of the MOS tube, and controls the on or off of the MOS tube so as to control the on or off of the laser lamp bead connected with the MOS tube. Therefore, the vertical cavity surface emitting laser provided by the invention can selectively control the on and off of the required number of laser beads, so that the vertical cavity surface emitting laser can switch the power mode at will, and the problem of high power consumption caused by the fact that the vertical cavity surface emitting laser is always in a high-power mode in the prior art is effectively solved.
It should be apparent to those skilled in the art that while the preferred embodiments of the present invention have been described, additional variations and modifications in these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (9)
1. a vertical cavity surface emitting laser, comprising:
A laser substrate having a first pole and a second pole;
The driving chip comprises at least N driving pins, wherein N is a positive integer greater than 1;
The first poles of the M laser lamp beads are electrically connected with the first pole of the laser substrate, the first poles of the laser lamp beads are the same as the first pole of the laser substrate in polarity, and M is a positive integer greater than 1;
The LED driving circuit comprises N MOS tubes, wherein the N MOS tubes correspond to the at least N driving pins one to one, the grid electrode of one MOS tube is electrically connected with one driving pin corresponding to the driving chip, one of the drain electrode and the source electrode of one MOS tube is electrically connected with the second pole of the laser substrate, the other pole of the MOS tube is electrically connected with the second pole of one laser lamp bead, and the second pole of the laser substrate is the same as the second pole of the laser lamp bead in polarity.
2. A vertical cavity surface emitting laser according to claim 1,
The first electrode is a cathode, and the second electrode is an anode; alternatively, the first electrode is an anode and the second electrode is a cathode.
3. a vertical cavity surface emitting laser according to claim 1,
The total current of the vertical cavity surface emitting laser is larger than or equal to the product of the opening current of the laser lamp beads and the number of the laser lamp beads required to be lightened.
4. a vertical cavity surface emitting laser according to claim 3,
the M laser lamp beads are uniformly distributed on the wafer through a laser manufacturing process;
the driving chip is internally pre-stored with the position information of each laser lamp bead on the wafer;
The driving chip selectively controls the on or off of the laser lamp beads connected with the MOS tube according to the position information and the number of the laser lamp beads required to be turned on;
And the quantity of the laser lamp beads required to be lightened is determined by the total current and the starting current.
5. A vertical cavity surface emitting laser according to claim 4,
The driving chip selects a pre-lighting area, and selectively controls the laser lamp beads connected with the MOS tube to be lighted in the pre-lighting area according to the position information and the quantity of the laser lamp beads required to be lighted.
6. a vertical cavity surface emitting laser according to claim 1, wherein said MOS transistor is a MOS transistor having a minimum equivalent capacitance, a minimum on-resistance, and a maximum on-speed.
7. A vertical cavity surface emitting laser according to any one of claims 1 to 6, wherein said MOS transistor is a P-channel MOS transistor;
the second pole of the laser substrate and the second pole of the laser lamp bead are both cathodes, or the second pole of the laser substrate and the second pole of the laser lamp bead are both anodes.
8. a vertical cavity surface emitting laser according to any one of claims 1 to 6, wherein said MOS transistor is an N-channel MOS transistor;
The second pole of the laser substrate and the second pole of the laser lamp bead are both anodes, or the second pole of the laser substrate and the second pole of the laser lamp bead are both cathodes.
9. an electronic device, comprising: a vertical cavity surface emitting laser according to any one of claims 1 to 8.
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| CN201810462553.7A CN108777434B (en) | 2018-05-15 | 2018-05-15 | Vertical cavity surface emitting laser and electronic equipment |
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| CN201810462553.7A CN108777434B (en) | 2018-05-15 | 2018-05-15 | Vertical cavity surface emitting laser and electronic equipment |
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| CN108777434B true CN108777434B (en) | 2019-12-13 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1530681A (en) * | 2003-03-14 | 2004-09-22 | 中国科学院半导体研究所 | Parallel light transmitting module of vertical cavity transmitting laser array and producing method thereof |
| CN106376143A (en) * | 2016-11-08 | 2017-02-01 | 广州市雅江光电设备有限公司 | Single-path constant-current drive circuit for controlling multiple LED pixel points |
| CN205987465U (en) * | 2016-08-22 | 2017-02-22 | 泉州兴泉龙电子科技有限公司 | Improved generation solar lamp cluster |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8861560B2 (en) * | 2012-11-06 | 2014-10-14 | Fujitsu Limited | Vertical-cavity surface-emitting laser driver with improved output impedance |
| CN106658823B (en) * | 2016-11-08 | 2019-05-14 | 广州市雅江光电设备有限公司 | A kind of circuit brightness adjustment control logic of the multiple LED pixel points of single channel constant current drive control |
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2018
- 2018-05-15 CN CN201810462553.7A patent/CN108777434B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1530681A (en) * | 2003-03-14 | 2004-09-22 | 中国科学院半导体研究所 | Parallel light transmitting module of vertical cavity transmitting laser array and producing method thereof |
| CN205987465U (en) * | 2016-08-22 | 2017-02-22 | 泉州兴泉龙电子科技有限公司 | Improved generation solar lamp cluster |
| CN106376143A (en) * | 2016-11-08 | 2017-02-01 | 广州市雅江光电设备有限公司 | Single-path constant-current drive circuit for controlling multiple LED pixel points |
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