CN108336131B - 垂直双扩散金属-氧化物半导体晶体管及其制作方法 - Google Patents
垂直双扩散金属-氧化物半导体晶体管及其制作方法 Download PDFInfo
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- CN108336131B CN108336131B CN201810159636.9A CN201810159636A CN108336131B CN 108336131 B CN108336131 B CN 108336131B CN 201810159636 A CN201810159636 A CN 201810159636A CN 108336131 B CN108336131 B CN 108336131B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 61
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 48
- 229920005591 polysilicon Polymers 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 238000002955 isolation Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 239000002019 doping agent Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 208000032750 Device leakage Diseases 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810159636.9A CN108336131B (zh) | 2018-02-26 | 2018-02-26 | 垂直双扩散金属-氧化物半导体晶体管及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810159636.9A CN108336131B (zh) | 2018-02-26 | 2018-02-26 | 垂直双扩散金属-氧化物半导体晶体管及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN108336131A CN108336131A (zh) | 2018-07-27 |
CN108336131B true CN108336131B (zh) | 2019-03-08 |
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CN201810159636.9A Active CN108336131B (zh) | 2018-02-26 | 2018-02-26 | 垂直双扩散金属-氧化物半导体晶体管及其制作方法 |
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Families Citing this family (1)
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CN114695557B (zh) * | 2022-03-31 | 2024-02-09 | 博研嘉信(北京)科技有限公司 | 一种锂电池充电管理的vdmos器件及其制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103560148B (zh) * | 2013-10-18 | 2016-03-23 | 西安龙腾新能源科技发展有限公司 | 一种超结器件的结终端结构及其制造方法 |
CN105070760B (zh) * | 2015-09-06 | 2017-12-19 | 电子科技大学 | 一种功率mos器件 |
CN106847919A (zh) * | 2016-12-26 | 2017-06-13 | 中国科学院微电子研究所 | 一种高压超结vdmos |
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2018
- 2018-02-26 CN CN201810159636.9A patent/CN108336131B/zh active Active
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Effective date of registration: 20200420 Address after: 300 000 Xindu Building 1-1-505-1, southwest of the intersection of Weijin Road and Wandezhuang Street, Nankai District, Tianjin Patentee after: HUIJIAWANG (TIANJIN) TECHNOLOGY Co.,Ltd. Address before: 025550 villager group of Dong Gu Zi village, Bayan Hua Town, Chifeng, the Inner Mongolia Autonomous Region Co-patentee before: Li Yana Patentee before: Cong Yanxin Co-patentee before: Wang Haiyun Co-patentee before: Chu Tuanjie Co-patentee before: HUIJIAWANG (TIANJIN) TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20200529 Address after: 215500 No.13, Caotang Road, Changshu, Suzhou, Jiangsu Province Patentee after: Changshu intellectual property operation center Co.,Ltd. Address before: 300 000 Xindu Building 1-1-505-1, southwest of the intersection of Weijin Road and Wandezhuang Street, Nankai District, Tianjin Patentee before: HUIJIAWANG (TIANJIN) TECHNOLOGY Co.,Ltd. |
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Address after: 215500 5th floor, building 4, 68 Lianfeng Road, Changfu street, Changshu City, Suzhou City, Jiangsu Province Patentee after: Changshu intellectual property operation center Co.,Ltd. Address before: No.13 caodang Road, Changshu City, Suzhou City, Jiangsu Province Patentee before: Changshu intellectual property operation center Co.,Ltd. |
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Effective date of registration: 20220805 Address after: 215500 room 130, South Building (b), 21st floor, yunshang building, No. 1, Mogan Road, Changshu City, Suzhou City, Jiangsu Province Patentee after: Suzhou xinwanmei e-commerce Co.,Ltd. Address before: 215500 5th floor, building 4, 68 Lianfeng Road, Changfu street, Changshu City, Suzhou City, Jiangsu Province Patentee before: Changshu intellectual property operation center Co.,Ltd. |
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