CN107563273A - 超声波感测模组及其制作方法、电子装置 - Google Patents
超声波感测模组及其制作方法、电子装置 Download PDFInfo
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- CN107563273A CN107563273A CN201710548230.5A CN201710548230A CN107563273A CN 107563273 A CN107563273 A CN 107563273A CN 201710548230 A CN201710548230 A CN 201710548230A CN 107563273 A CN107563273 A CN 107563273A
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- ultrasonic wave
- piezoelectric layer
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- thin film
- film transistor
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- 238000003491 array Methods 0.000 claims description 7
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- 238000000059 patterning Methods 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 claims description 4
- 150000001336 alkenes Chemical class 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- PQIOSYKVBBWRRI-UHFFFAOYSA-N methylphosphonyl difluoride Chemical group CP(F)(F)=O PQIOSYKVBBWRRI-UHFFFAOYSA-N 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
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- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
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- 239000002033 PVDF binder Substances 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- 229920000131 polyvinylidene Polymers 0.000 description 2
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- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
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- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/071—Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/088—Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/802—Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/852—Composite materials, e.g. having 1-3 or 2-2 type connectivity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
Description
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710548230.5A CN107563273B (zh) | 2017-07-06 | 2017-07-06 | 超声波感测模组及其制作方法、电子装置 |
TW106124647A TWI668463B (zh) | 2017-07-06 | 2017-07-21 | 超音波感測模組及其製作方法、電子裝置 |
US15/940,917 US11130154B2 (en) | 2017-07-06 | 2018-03-29 | Ultrasonic sensor, electronic device using same, and method for making same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710548230.5A CN107563273B (zh) | 2017-07-06 | 2017-07-06 | 超声波感测模组及其制作方法、电子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107563273A true CN107563273A (zh) | 2018-01-09 |
CN107563273B CN107563273B (zh) | 2021-07-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201710548230.5A Active CN107563273B (zh) | 2017-07-06 | 2017-07-06 | 超声波感测模组及其制作方法、电子装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11130154B2 (zh) |
CN (1) | CN107563273B (zh) |
TW (1) | TWI668463B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108446685A (zh) * | 2018-05-24 | 2018-08-24 | 京东方科技集团股份有限公司 | 超声波指纹识别模组及其制备方法和显示装置 |
CN108921074A (zh) * | 2018-06-26 | 2018-11-30 | 业成科技(成都)有限公司 | 超声波指纹识别模组及其制作方法 |
CN109330623A (zh) * | 2018-10-11 | 2019-02-15 | 业成科技(成都)有限公司 | 超声波传感器及超声波传感器的制造方法 |
CN112347880A (zh) * | 2020-10-27 | 2021-02-09 | 京东方科技集团股份有限公司 | 显示基板、显示面板及显示装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106951130B (zh) * | 2017-03-28 | 2019-09-03 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板、显示设备及阵列基板制备方法 |
WO2020261431A1 (ja) * | 2019-06-26 | 2020-12-30 | 日本電信電話株式会社 | 通信システム、子局、および通信方法 |
CN110542476A (zh) * | 2019-09-24 | 2019-12-06 | 成都大超科技有限公司 | 超声波模组及其制备方法、超声传感器 |
US11093090B2 (en) * | 2019-12-06 | 2021-08-17 | Fingerprint Cards Ab | TFT-based fingerprint sensing system with corrected read-out |
WO2023205470A1 (en) * | 2022-04-21 | 2023-10-26 | Kureha America, Inc. | Piezoelectric film with carbon nanotube-based electrodes |
Citations (4)
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US20150063663A1 (en) * | 2013-08-30 | 2015-03-05 | Ye Xin Technology Consulting Co., Ltd. | Electronic device with fingerprint indentify function |
CN104680125A (zh) * | 2014-11-24 | 2015-06-03 | 麦克思智慧资本股份有限公司 | 指纹识别元件及指纹识别装置 |
CN104915637A (zh) * | 2015-04-22 | 2015-09-16 | 麦克思股份有限公司 | 指纹识别模组的制作方法 |
CN106531784A (zh) * | 2016-10-20 | 2017-03-22 | 麦克思商务咨询(深圳)有限公司 | 薄膜晶体管、超声波传感器、阵列基板及显示装置 |
Family Cites Families (10)
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WO2011112622A1 (en) * | 2010-03-08 | 2011-09-15 | Ultra-Scan Corporation | Biometric sensor with delay layer |
FR2979991B1 (fr) * | 2011-09-14 | 2014-04-25 | Commissariat Energie Atomique | Capteur de pression piezoelectrique |
JP2016525751A (ja) * | 2013-07-15 | 2016-08-25 | クアルコム,インコーポレイテッド | センサアレイを動作させるための方法および集積回路 |
CA2929723C (en) * | 2013-12-12 | 2020-09-15 | Qualcomm Incorporated | Micromechanical ultrasonic transducers and display |
US9941472B2 (en) * | 2014-03-10 | 2018-04-10 | International Business Machines Corporation | Piezoelectronic device with novel force amplification |
CN104677399B (zh) * | 2014-11-24 | 2017-12-05 | 麦克思智慧资本股份有限公司 | 超声波传感器 |
TWI580933B (zh) * | 2014-12-08 | 2017-05-01 | 麥克思股份有限公司 | 超音波感測器 |
TWI531981B (zh) * | 2015-04-27 | 2016-05-01 | 麥克思股份有限公司 | 指紋識別模組的製作方法 |
CN105631402B (zh) * | 2015-12-18 | 2019-02-19 | 业成科技(成都)有限公司 | 指纹识别装置及方法 |
KR102455040B1 (ko) * | 2016-01-29 | 2022-10-17 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
-
2017
- 2017-07-06 CN CN201710548230.5A patent/CN107563273B/zh active Active
- 2017-07-21 TW TW106124647A patent/TWI668463B/zh active
-
2018
- 2018-03-29 US US15/940,917 patent/US11130154B2/en active Active
Patent Citations (5)
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US20150063663A1 (en) * | 2013-08-30 | 2015-03-05 | Ye Xin Technology Consulting Co., Ltd. | Electronic device with fingerprint indentify function |
CN104680125A (zh) * | 2014-11-24 | 2015-06-03 | 麦克思智慧资本股份有限公司 | 指纹识别元件及指纹识别装置 |
US20160148033A1 (en) * | 2014-11-24 | 2016-05-26 | Miics & Partners Inc. | Fingerprint identification unit and device |
CN104915637A (zh) * | 2015-04-22 | 2015-09-16 | 麦克思股份有限公司 | 指纹识别模组的制作方法 |
CN106531784A (zh) * | 2016-10-20 | 2017-03-22 | 麦克思商务咨询(深圳)有限公司 | 薄膜晶体管、超声波传感器、阵列基板及显示装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108446685A (zh) * | 2018-05-24 | 2018-08-24 | 京东方科技集团股份有限公司 | 超声波指纹识别模组及其制备方法和显示装置 |
CN108921074A (zh) * | 2018-06-26 | 2018-11-30 | 业成科技(成都)有限公司 | 超声波指纹识别模组及其制作方法 |
CN109330623A (zh) * | 2018-10-11 | 2019-02-15 | 业成科技(成都)有限公司 | 超声波传感器及超声波传感器的制造方法 |
CN112347880A (zh) * | 2020-10-27 | 2021-02-09 | 京东方科技集团股份有限公司 | 显示基板、显示面板及显示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN107563273B (zh) | 2021-07-27 |
US20190009302A1 (en) | 2019-01-10 |
TW201907179A (zh) | 2019-02-16 |
US11130154B2 (en) | 2021-09-28 |
TWI668463B (zh) | 2019-08-11 |
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Effective date of registration: 20180820 Address after: 610041 689 cooperation Road, hi-tech West District, Chengdu, Sichuan Applicant after: Cheng Cheng Technology (Chengdu) Co., Ltd. Applicant after: Interface Optoelectronic (Shenzhen) Co., Ltd. Address before: 518057 Room 201, building A, 1 Bay Road, Shenzhen Hong Kong cooperation zone, Qianhai, Shenzhen, Guangdong, Nanshan District Applicant before: MIICS BUSINESS CONSULTING (SHENZHEN) CO., LTD. |
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Effective date of registration: 20200918 Address after: 611731 4th floor, building N9, No. 689, Hezuo Road, hi tech West Zone, Chengdu, Sichuan Province Applicant after: Yihong Technology (Chengdu) Co., Ltd Address before: 610041 689 cooperation Road, hi-tech West District, Chengdu, Sichuan Applicant before: INTERFACE TECHNOLOGY (CHENGDU) Co.,Ltd. Applicant before: INTERFACE OPTOELECTRONICS (SHENZHEN) Co.,Ltd. |
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