CN107532281B - 表面处理铜箔及其制造方法、印刷电路板用覆铜层叠板、以及印刷电路板 - Google Patents
表面处理铜箔及其制造方法、印刷电路板用覆铜层叠板、以及印刷电路板 Download PDFInfo
- Publication number
- CN107532281B CN107532281B CN201680024855.5A CN201680024855A CN107532281B CN 107532281 B CN107532281 B CN 107532281B CN 201680024855 A CN201680024855 A CN 201680024855A CN 107532281 B CN107532281 B CN 107532281B
- Authority
- CN
- China
- Prior art keywords
- silicon
- copper foil
- layer
- atomic
- treated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 190
- 239000011889 copper foil Substances 0.000 title claims abstract description 176
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000010410 layer Substances 0.000 claims abstract description 155
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 145
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 142
- 239000010703 silicon Substances 0.000 claims abstract description 138
- 239000002335 surface treatment layer Substances 0.000 claims abstract description 72
- 239000011347 resin Substances 0.000 claims abstract description 71
- 229920005989 resin Polymers 0.000 claims abstract description 71
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 64
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 56
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000001301 oxygen Substances 0.000 claims abstract description 52
- 238000004544 sputter deposition Methods 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims abstract description 37
- 238000007740 vapor deposition Methods 0.000 claims abstract description 11
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 12
- 239000001569 carbon dioxide Substances 0.000 claims description 12
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 12
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 4
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 239000001273 butane Substances 0.000 claims description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 2
- 239000001294 propane Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 28
- 238000009413 insulation Methods 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 238000005259 measurement Methods 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- -1 and the like Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000011888 foil Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000004873 anchoring Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910018540 Si C Inorganic materials 0.000 description 3
- 229910018557 Si O Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000013507 mapping Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000010485 coping Effects 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000005211 surface analysis Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- WZRRRFSJFQTGGB-UHFFFAOYSA-N 1,3,5-triazinane-2,4,6-trithione Chemical compound S=C1NC(=S)NC(=S)N1 WZRRRFSJFQTGGB-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- SADQQDLRCRDNRA-UHFFFAOYSA-N 2h-benzotriazol-4-ylmethylurea Chemical compound NC(=O)NCC1=CC=CC2=NNN=C12 SADQQDLRCRDNRA-UHFFFAOYSA-N 0.000 description 1
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 229920006284 nylon film Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/061—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/285—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyethers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/42—Layered products comprising a layer of synthetic resin comprising condensation resins of aldehydes, e.g. with phenols, ureas or melamines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B29/00—Layered products comprising a layer of paper or cardboard
- B32B29/002—Layered products comprising a layer of paper or cardboard as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B29/005—Layered products comprising a layer of paper or cardboard as the main or only constituent of a layer, which is next to another layer of the same or of a different material next to another layer of paper or cardboard layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/022—Non-woven fabric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/024—Woven fabric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/02—Disposition of insulation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/036—Multilayers with layers of different types
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
- H05K3/025—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/03—3 layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/04—4 layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/10—Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/20—Inorganic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/20—Inorganic coating
- B32B2255/205—Metallic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/26—Polymeric coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/28—Multiple coating on one surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/02—Composition of the impregnated, bonded or embedded layer
- B32B2260/021—Fibrous or filamentary layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/02—Composition of the impregnated, bonded or embedded layer
- B32B2260/028—Paper layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/04—Impregnation, embedding, or binder material
- B32B2260/046—Synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/10—Inorganic fibres
- B32B2262/101—Glass fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
- B32B2264/10—Inorganic particles
- B32B2264/101—Glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/406—Bright, glossy, shiny surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/538—Roughness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/582—Tearability
- B32B2307/5825—Tear resistant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/732—Dimensional properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0275—Fibers and reinforcement materials
- H05K2201/029—Woven fibrous reinforcement or textile
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Textile Engineering (AREA)
- Ceramic Engineering (AREA)
- Laminated Bodies (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Physical Vapour Deposition (AREA)
Abstract
提供一种表面处理铜箔,其具备表面处理层,所述表面处理层即使是通过溅射等蒸镀法形成的极其平坦的铜箔表面也能实现与树脂层的高密合强度,而且具有适于印刷电路基板的细间距化的理想的绝缘电阻。本发明的表面处理铜箔具备:铜箔;和、设置于铜箔的至少单面且主要包含硅(Si)的硅系表面处理层。在通过XPS(X射线光电子能谱)对硅系表面处理层进行测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%。
Description
技术领域
本发明涉及表面处理铜箔及其制造方法、印刷电路板用覆铜层叠板、以及印刷电路板。
背景技术
随着近年的便携式电子设备等电子设备的小型化及高功能化,对于印刷电路板要求布线图案的进一步微细化(细间距化)。为了应对所述要求,对于印刷电路板制造用铜箔,比现有还要薄具有更低的表面粗糙度。
另一方面,印刷电路板制造用铜箔与绝缘树脂基板粘贴而使用,重要的是如何确保铜箔与树脂绝缘基板的密合强度。这是因为,若密合强度低,则在印刷电路板制造时变得容易发生布线的剥离,因此制品成品率降低。在这点出发,对于通常的印刷电路板制造用铜箔,对铜箔的粘贴面实施粗糙化处理而形成凹凸,通过冲压加工使该凹凸挤入绝缘树脂基材的内部而发挥锚固效果,由此提高了密合性。但是,使用了该粗糙化处理的方法与为了应对上述那样的细间距化而为比以前更薄低表面粗糙度的铜箔不相容。
也已知有在不实施粗糙化处理而提高铜箔与绝缘树脂基材的密合性的印刷电路板用铜箔。例如,专利文献1(日本特开2007-266416号公报)中公开了至少单面的表面粗糙度Rz为2.5μm以下、且至少SiO2那样的Si氧化物位点在该单面分散而露出的金属箔。该文献中实际使用的金属箔是厚度18μm且两面的表面粗糙度Rz为0.7μm的压延铜箔。
现有技术文献
专利文献
专利文献1:日本特开2007-266416号公报
发明内容
专利文献1中,金属箔与绝缘基材的剥离强度变高,因此通过对覆金属箔层叠板的蚀刻处理,能够形成精细图案的导体电路,但该文献中作为细间距而假定的线(line)/间距(space)(L/S)不过为25μm/25μm左右。与此相对,近年来期望高度微细化至线/间距(L/S)为13μm以下/13μm以下(例如12μm/12μm、10μm/10μm、5μm/5μm、2μm/2μm)这样的程度的布线图案的形成,因此期望使用薄至至今为止没有的程度的铜箔(例如厚度1μm以下)。但是,若通过电解制箔的方法制造这样的极薄铜箔,则起因于过薄的厚度,变得容易产生针孔形成等问题。另外,虽然提出了通过溅射而不是以往的电解制箔的方法来制造厚度3μm以下的极薄铜箔的技术,但对于如此形成的极薄铜箔,具有极其平坦的铜箔表面(例如轮廓的算术平均偏差Ra:200nm以下),因此不能期待利用了铜箔表面凹凸的锚固效果,确保所述极薄铜箔与树脂层的高密合强度是极其困难的。而且,也期望有效地防止或减少印刷电路基板的经如上所述的高度细间距化的布线图案中的布线间的漏电流的产生。
本发明人等此次获得如下见解:通过在铜箔的至少单面形成以规定的浓度添加碳及氧而成的硅系表面处理层,从而能够得到带有表面处理层的铜箔,所述表面处理层即使是通过溅射等蒸镀法形成的那样的极其平坦的铜箔表面也能实现与树脂层的高密合强度,而且具有适于印刷电路基板的细间距化的理想的绝缘电阻。
因此,本发明的目的在于,提供一种具备表面处理层的铜箔,所述表面处理层即使是通过溅射等蒸镀法形成的那样的极其平坦的铜箔表面也能实现与树脂层的高密合强度,而且具有适于印刷电路基板的细间距化的理想的绝缘电阻。
根据本发明的一实施方式,提供一种表面处理铜箔,其具备:铜箔和硅系表面处理层,所述硅系表面处理层设置在前述铜箔的至少单面且主要包含硅(Si),在通过XPS(X射线光电子能谱)测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%。
根据本发明的又一实施方式,提供一种印刷电路板用覆铜层叠板,其具备:上述形态的表面处理铜箔;和、密合于该硅系表面处理层而设置的树脂层。
根据本发明的另一实施方式,提供一种印刷电路板,其包含将树脂层、硅系表面处理层及铜层依次层叠而成的层结构,所述硅系表面处理层主要包含硅(Si),并且在通过XPS(X射线光电子能谱)测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%。
本发明的另一实施方式提供一种方法,其是上述形态的表面处理铜箔的制造方法,其具备:
准备铜箔的工序;和
通过气相成膜在前述铜箔的至少单面形成硅系表面处理层的工序,所述硅系表面处理层主要包含硅(Si),并且在通过XPS(X射线光电子能谱)测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%。
附图说明
图1为示出包含本发明的表面处理铜箔的带载体的铜箔的一实施方式的示意截面图。
图2为示出例1~8的覆铜层叠板的制造工序的流程图。
图3为示出例1~8的剥离强度测定用样品的制造工序的流程图。
图4为示出例1~8的微细布线图案的形成工序的流程图。
图5为例3中观察到的微细布线图案的SEM照片。
图6A为通过TEM-EDX对包含本发明的带载体的铜箔的覆铜层叠板的截面中的、载体12、耐热金属层14、剥离层16、极薄铜箔层18、硅系表面处理层20及树脂基材26的界面进行观察而得到的图像。
图6B为在将图6A所示的极薄铜箔层18、硅系表面处理层20及树脂基材26的界面部分放大而成的图像上重叠通过EDX得到的Si元素映射图像而得到的图像。
具体实施方式
表面处理铜箔
本发明的表面处理铜箔是具备铜箔和设置于该铜箔的至少单面的硅系表面处理层而成的。根据期望,硅系表面处理层也可以设置在铜箔的两面。而且,硅系表面处理层为主要包含硅(Si)的层,是在通过XPS(X射线光电子能谱)测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%的层。通过形成以如此规定的浓度添加了碳及氧而成的硅系表面处理层,从而能够提供具备表面处理层的铜箔,所述表面处理层即使是通过溅射等蒸镀法形成的那样的极其平坦的铜箔表面也能实现与树脂层的高密合强度,而且具有适于印刷电路基板的细间距化的理想的绝缘电阻。
如前所述,对于高度微细化至线/间距(L/S)为13μm以下/13μm以下(例如12μm/12μm、10μm/10μm、5μm/5μm、2μm/2μm)这样的程度的布线图案的形成,期望使用迄今为止没有程度的薄的极薄铜箔(例如厚度1μm以下)。但是,想要通过电解制箔的方法制造这样的极薄铜箔,则起因于过薄的厚度,变得容易产生针孔形成等问题。另外,虽然提出了通过溅射而不是以往的电解制箔的方法来厚度3μm以下的极薄铜箔的技术,但对于如此形成的极薄铜箔,由于具有极其平坦的铜箔表面(例如轮廓的算术平均偏差Ra:200nm以下),因此不能期待利用了铜箔表面凹凸的锚固效果,从而极其难以确保所述极薄铜箔与树脂层的高密合强度。对于该点,本发明的表面处理铜箔通过采用基于控制表面处理层的组成的化学方法、而不是基于以往的极薄铜箔那样的利用上述锚固效果那样的物理方法确保密合性,从而能实现与树脂层的密合性的提高。即,通过在铜箔的至少单面形成主要包含硅(Si)的硅系表面处理层,从而即使是通过溅射等蒸镀法形成的那样的极其平坦的铜箔表面,也能够实现与树脂层的高密合强度,所述硅系表面处理层在通过XPS测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%。并且对于上述组成的硅系表面处理层,也能够实现适于印刷电路基板的细间距化的理想的绝缘电阻,由此能够有效地防止或减少经细间距化的布线图案中的布线间的漏电流的产生。
因此,本发明的表面处理铜箔优选用于印刷电路板用覆铜层叠板的制造,该制造中,在硅系表面处理层上层叠有树脂层(典型的是绝缘树脂层)。
构成本发明的表面处理铜箔的铜箔可以用任意方法制造。因此,铜箔可以为电解铜箔、压延铜箔,以带载体的铜箔的形态准备铜箔的情况下,可以为通过化学镀铜法及电解镀铜法等湿式成膜法、溅射及真空蒸镀等物理气相成膜法、化学气相成膜、或它们的组合形成的铜箔。从容易与基于极薄化(例如厚度3μm以下)的细间距化相对应的观点出发,特别优选的铜箔为通过溅射法、真空蒸镀等物理气相成膜制造的铜箔,最优选为通过溅射法制造的铜箔。另外,铜箔优选为无粗糙化的铜箔,只要不对印刷电路板制造时的布线图案形成带来障碍,可以通过预粗糙化、软蚀刻处理、清洗处理、氧化还原处理产生二次粗糙化。对铜箔的厚度没有特别限定,为了与上述那样的细间距化相对应,优选为50~3000nm、更优选为75~2000nm、进一步优选为90~1500nm、特别优选为100~1000nm、最优选为100~700nm或150~800nm或200~1000nm。通过溅射法制造这样的范围内的厚度的铜箔在成膜厚度的面内均一性、在片状、卷状下的生产率的观点上是优选的。
对于构成本发明的表面处理铜箔的铜箔的硅系表面处理层侧的表面,优选具有根据JIS B 0601-2001测定的200nm以下的轮廓的算术平均偏差Ra,更优选为1~175nm、进一步优选为2~180nm、特别优选为3~130nm、最优选为5~100nm。这样轮廓的算术平均偏差越小,在使用表面处理铜箔制造的印刷电路板中,越能够形成高度微细化至线/间距(L/S)为13μm以下/13μm以下(例如12μm/12μm~2μm/2μm)这样的程度的布线图案。需要说明的是,对于这样极其平坦的铜箔表面,不能够期待利用了铜箔表面凹凸的锚固效果,本发明的表面处理铜箔通过采用基于控制硅系表面处理层的组成的化学方法、而不是基于上述锚固效果那样的物理方法确保密合性,从而能够实现与树脂层的密合性的提高。本发明中的轮廓的算术平均偏差Ra采用通过非接触表面形状测定机测定的值。作为非接触表面形状测定机,可列举出Zygo株式会社制的NewView5032等。
如上所述,本发明的表面处理铜箔可以以带载体的铜箔的形态提供。极薄铜箔的情况下,通过采用带载体的铜箔,能够提高处理性。特别是通过溅射法等真空蒸镀制造铜箔的情况下,通过采用带载体的铜箔的形态,能够理想地制造。如图1所示,带载体的铜箔10可以在载体12上依次具备剥离层16、极薄铜箔层18及硅系表面处理层20,也可以在载体12与剥离层16之间进一步设置耐热金属层14。另外,也可以采用在载体12的两面以上下对称的方式依次具备上述各种层的结构。带载体的铜箔除了具备上述极薄铜箔层18及硅系表面处理层20以外,只要采用公知的层结构,就没有特别限定。作为载体的例子,不仅可列举出铜箔、镍箔、不锈钢箔、铝箔等金属箔,而且还可列举出PET薄膜、PEN薄膜、芳族聚酰胺薄膜、聚酰亚胺薄膜、尼龙薄膜、液晶聚合物等树脂薄膜、在树脂薄膜上具备金属涂层的金属涂布树脂薄膜等,优选为铜箔。作为载体的铜箔可以为压延铜箔及电解铜箔中任意者。载体的厚度典型的为210μm以下,从带载体的铜箔的运输性和防止载体剥离时的破损的观点出发,优选为10~210μm。作为构成耐热金属层14的金属的优选例子,可列举出铁、镍、钛、钽及钨,其中,特别优选钛。这些金属在经高温冲压加工等时作为相互扩散阻隔物的稳定性高,特别是钛,其钝化膜由非常坚硬的氧化物构成,因此表现出优异的高温耐热性。该情况下,钛层优选通过溅射等物理气相成膜来形成。钛层等耐热金属层14的厚度优选为1~50nm、更优选为4~50nm。剥离层16可以为有机剥离层、无机剥离层及碳系剥离层中任意种。作为有机剥离层的例子,可列举出:含氮有机化合物、含硫有机化合物、羧酸等。作为含氮有机化合物的例子,可列举出***化合物、咪唑化合物等,其中,***化合物在剥离性容易稳定的方面是优选的。作为***化合物的例子,可列举出1,2,3-苯并***、羧基苯并***、N’,N’-双(苯并***基甲基)脲、1H-1,2,4-***及3-氨基-1H-1,2,4-***等。作为含硫有机化合物的例子,可列举出巯基苯并噻唑、硫氰尿酸、2-苯并咪唑硫醇等。作为羧酸的例子,可列举出单羧酸、二羧酸等。另一方面,作为无机剥离层的例子,可列举出Ni、Mo、Co、Cr、Fe、Ti、W、P、Zn的组中至少任1种金属、金属氧化物等。另外,作为碳系剥离层的例子,可列举出碳层。碳与载体的相互扩散性及反应性小,即使经受超过300℃的温度下的冲压加工等,也会防止在铜箔层与接合界面之间的由高温加热导致的金属结合的形成,从而能够维持载体的剥离去除容易的状态。该碳层也优选使用溅射等物理气相成膜来形成。对于剥离层的厚度,从剥离容易性和生产效率的方面出发,优选为0.5~500nm、更优选为1~100nm。剥离层为碳层时,碳层的换算厚度优选为1~20nm。该厚度采用通过透射型电子显微镜的能量色散X射线光谱分析仪(TEM-EDX)对层截面进行分析而测定的值。
构成本发明的表面处理铜箔的硅系表面处理层是在通过XPS测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%,主要包含硅(Si)的层。构成硅系表面处理层的硅典型的为无定形硅。“主要包含硅(Si)”是指硅原子与碳浓度相比为较高浓度,并且与氧浓度相比为较高浓度。对于硅系表面处理层中的硅原子的浓度,通过XPS(X射线光电子能谱)测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,优选为40~87原子%、更优选为45~85原子%、进一步优选为47~75原子%。为这样的范围内时,能够显著地发挥无定形硅的绝缘性及耐热性。另外,对于硅系表面处理层中的硅原子的含量,通过高频辉光放电发光表面分析装置(GDS)测定的情况下,优选为40~87原子%、更优选为43~86原子%、进一步优选为45~75原子%、特别优选为47~70原子%。硅系表面处理层中的碳原子及氧原子典型的是与硅原子键合。通过使硅系表面处理层以上述量含有碳及氧,能够实现与树脂层密合性及绝缘电阻这两者。另外,构成硅系表面处理层的硅系材料可以由于原料成分、成膜工序等而含有不可避免地混入的不可避免的杂质。例如,在溅射靶中微量添加用于实现DC溅射的硼等导电性掺杂剂的情况下,那样的掺杂剂能不可避免地微量地混入硅系表面处理层中,不可避杂质的混入是允许的。另外,在不脱离本发明主旨的范围内,硅系表面处理层可以包含其他掺杂剂、作为起因于成膜时的气氛的微量的不可避气体成分的氢、氮等。
对于硅系表面处理层的碳浓度,通过XPS测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,优选为1.0~35.0原子%、更优选为5.0~34.0原子%、特别优选为10.0~30.0原子%、最优选为12.0~30.0原子%。对于硅系表面处理层的氧浓度,通过XPS测定的情况下,相对于碳(C)、氧及硅(Si)这3种元素的总量100原子%,优选为12.0~40.0原子%、更优选为15.0~35.0原子%、进一步优选为20.0~30.0原子%、最优选为22.0~28.0原子%。碳浓度及氧浓度为上述范围内时,能够显著提高与树脂层的密合性及绝缘电阻。对于其机理不确定,通过使硅系表面处理层中存在某种程度的氧原子,有助于绝缘电阻;另一方面,氧原子过多时,与树脂层的密合性会降低。另外,通过使硅系表面处理层中存在某种程度的碳原子,也有助于密合性及绝缘电阻的提高。
本说明书中,硅系表面处理层的硅浓度、碳浓度及氧浓度可以通过XPS(X射线光电子能谱)来测定,更具体而言,可以为基于在XPS中检测到的Si、C及O的各量,将所述3元素的总量设为100原子%时的O元素及C元素的存在比率(原子%)。该情况下,可以说硅浓度(原子%)为根据式100×Si/(Si+C+O)算出的值,碳浓度(原子%)为根据式100×C/(Si+C+O)算出的值,氧浓度(原子%)为根据式100×O/(Si+C+O)算出的值(这些式中,元素名是指该元素的量的意思)。这样通过XPS检测到的硅系表面处理层中的碳原子及氧原子典型的是优选与硅原子键合。对于键合状态,能够根据通过XPS测定而得到的图,根据与Si-O键能(104eV及532eV)及Si-C键能(100eV及283eV)相对应的两峰的存在来确认。基于XPS的测定可以自在铜箔上刚刚成膜后的硅系表面处理层起进行。另外,对于后述的使用本发明的表面处理铜箔制造的印刷电路板、电子部件的形态也是,通过使成为布线图案的正下方的绝缘层表层的硅系表面处理层露出,能够进行上述浓度测定及键合状态的确认。
硅系表面处理层优选具有0.1~100nm的厚度、更优选为2~100nm、进一步优选为2~20nm、特别优选为4~10nm。为这样的范围内时,能够显著提高与树脂层的密合性及绝缘电阻。该厚度采用通过透射型电子显微镜的能量色散X射线光谱分析仪(TEM-EDX)对层截面进行分析而测定的值。用于参考,将通过TEM-EDX对包含本发明的表面处理铜箔的带载体的覆铜层叠板25的截面中载体12、耐热金属层14、剥离层16、极薄铜箔层18、硅系表面处理层20及树脂基材26的界面进行观察而得到的图像示于图6A,另一方面,将使该图像的极薄铜箔层18、硅系表面处理层20及树脂基材26的界面部分放大并重叠通过EDX得到的Si元素映射图像而成的图像示于图6B。根据这样的图像,能够确认硅系表面处理层20在极薄铜箔层18的表面的存在及其厚度。
制造方法
本发明的表面处理铜箔可以通过准备上述铜箔、在该铜箔的至少单面通过气相成膜形成主要包含硅(Si)的硅系表面处理层来制造,所述硅系表面处理层在通过XPS测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%。如前所述,根据期望,也可以在铜箔的两面形成硅系表面处理层。
本发明的制造方法中使用的铜箔可以通过任意方法制造,关于其详细情况,如上所述。因此,从容易与基于极薄化(例如厚度1μm以下)的细间距化相对应的观点出发,特别优选的铜箔为通过溅射法等物理气相成膜制造的铜箔,最优选为通过溅射法制造的铜箔,那样的铜箔优选以带载体的铜箔的形态来准备。
本发明的制造方法中,硅系表面处理层的形成是通过气相成膜形成的。气相成膜可以为物理气相成膜及化学气相成膜中任意种。通过使用气相成膜,从而容易控制氧和/或碳的含量,并且能够在硅系表面处理层以期望的极其薄的厚度(0.1~100nm)进行成膜。因此,可以优选制造碳浓度1.0~35.0原子%为且氧浓度为12.0~40.0原子%的硅系表面处理层。
硅系表面处理层优选通过物理气相成膜来形成。作为物理气相成膜的例子,可列举出溅射法、真空蒸镀法、及离子镀法,最优选为溅射法。通过溅射法,能够极其良好地形成极其薄的硅系表面处理层而不损害铜箔表面的平坦性(优选轮廓的算术平均偏差Ra:200nm以下)。另外,对于采用图1所示那样的带载体的铜箔10的结构的情况下,在能够通过溅射法形成设置于载体12上的耐热金属层14、剥离层16、极薄铜箔层18及硅系表面处理层20全部的层这点上,也有制造效率变得格外高的优点。
对于物理气相成膜,优选使用硅靶和/或碳化硅靶与碳源及氧源一起进行。此时,碳源优选为选自由甲烷、乙烷、丙烷、丁烷、乙炔及四乙氧基硅烷组成的组中的至少1种气体,更优选为甲烷或二氧化碳(CO2)。另外,氧源优选为选自由二氧化碳(CO2)、氧气(O2)、二氧化氮(NO2)、水蒸汽(H2O)及一氧化氮(NO)组成的组中的至少1种气体,最优选为二氧化碳(CO2)或水蒸汽(H2O)。其中,作为碳源使用二氧化碳(CO2)的情况下,氧源优选为水蒸汽(H2O)。
对于物理气相成膜,只要使用公知的物理气相成膜装置按照公知的条件进行,就没有特别限定。例如,采用溅射法的情况下,溅射方式可以为磁控溅射、双极溅射法等公知的各种方法,但磁控溅射在成膜速度快、生产率高这点上是优选的。另外,溅射可以在DC(直流)及RF(高频)中任一种电源下进行,进行DC溅射的情况下,从提高成膜效率的观点出发,为了对硅靶赋予导电性而优选添加微量(例如0.01~500ppm)的硼等导电性掺杂剂。另外,开始溅射前的腔室内的到达真空度优选设为不足1×10-4Pa。作为溅射中使用的气体,优选与氩气等非活性气体一起组合使用上述那样的应该成为碳源及氧源的气体。最优选的气体为氩气、甲烷气体及二氧化碳的组合。氩气等的流量只要根据溅射腔室尺寸及成膜条件进行适宜决定,就没有特别限定。另外,从没有异常放电、等离子体照射不良等的运转不良、保持连续稳定成膜性的观点出发,对于成膜时的压力,优选在0.1~2.0Pa的范围进行。该压力范围通过根据装置结构、容量、真空泵的排气容量、成膜电源的额定容量等对成膜电力、氩气等的流量进行调整来设定即可。另外,对于溅射电力,考虑到成膜的膜厚均一性、生产率等,在靶的每单位面积为0.05~10.0W/cm2的范围内进行适宜设定即可。
印刷电路板用覆铜层叠板
根据本发明的优选方式,可提供具备本发明的表面处理铜箔和密合于该硅系表面处理层而设置的树脂层的印刷电路板用覆铜层叠板。表面处理铜箔可以设置在树脂层的单面,也可以设置在两面。
树脂层包含树脂、优选绝缘性树脂。树脂层优选为预浸料和/或树脂片。预浸料是使合成树脂浸渗至合成树脂板、玻璃板、玻璃织布、玻璃无纺布、纸等基材而成的复合材料的总称。作为绝缘性树脂的优选例,可列举出环氧树脂、氰酸酯树脂、双马来酰亚胺三嗪树脂(BT树脂)、聚苯醚树脂、酚醛树脂等。另外,作为构成树脂片的绝缘性树脂的例子,可列举出环氧树脂、聚酰亚胺树脂、聚酯树脂等绝缘树脂。另外,从提高绝缘性等的观点出发,树脂层中可以含有由二氧化硅、氧化铝等各种无机颗粒形成的填料颗粒等。对树脂层的厚度没有特别限定,优选为1~1000μm、更优选为2~400μm、进一步优选为3~200μm。树脂层可以由多个层构成,例如可以在内层预浸料的两面每个单面设置1层外层预浸料(两面总计2层)来构成树脂层,该情况下,内层预浸料也可以由2层或其以上的层构成。从铜箔的粘接强度的稳定性、防止铜箔表面的损伤等观点出发,预浸料和/或树脂片等树脂层借助预先涂布于铜箔表面的底漆树脂层而设置在表面处理铜箔是优选的。
印刷电路板
本发明的表面处理铜箔优选用于印刷电路板的制作。即,根据本发明,也可以提供具备源自表面处理铜箔的层结构的印刷电路板。该情况下,印刷电路板包含依次将树脂层、主要包含硅(Si)的层和铜层层叠而成的层结构。所述主要包含硅(Si)的层在通过XPS测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%,主要包含硅的层为源自本发明的表面处理铜箔的硅系表面处理层的层,铜层为源自本发明的表面处理铜箔的铜箔的层。另外,关于树脂层,关于覆铜层叠板如上所述。无论怎样,印刷电路板除了使用本发明的表面处理铜箔以外,可以采用公知的层结构。特别是,通过采用本发明的表面处理铜箔,印刷电路板的绝缘层及布线层的界面可以具有作为根据JIS B 0601-2001测定的轮廓的算术平均偏差Ra为200nm以下、更优选为1~175nm、进一步优选为2~180nm、特别优选为3~130nm、最优选为5~100nm的平滑的界面,能够得到微细布线加工性优异的印刷电路板。
作为印刷电路板相关的具体例,可列举出制成在预浸料的单面或两面粘接本发明的表面处理铜箔并固化而成的层叠体(CCL)后形成了电路的单面或两面印刷电路板、将它们多层化而成的多层印刷电路板等。另外,作为另一具体例,也可列举出在树脂薄膜上形成本发明的表面处理铜箔并形成电路的柔性·印刷电路板、COF、TAB带等。作为又一具体例,可列举出形成在本发明的表面处理铜箔上涂布有上述树脂层的带树脂的铜箔(RCC),将树脂层作为绝缘粘接材料层层叠在上述印刷电路板后,将表面处理铜箔作为布线层的全部或一部分,通过模拟半加成法(MSAP)法、减去法等方法形成电路的积层布线板;在半导体集成电路上交替进行了带树脂的铜箔的层叠和电路形成的晶圆上直接积层(direct buildupon wafer)等。此外,对于将树脂层作为绝缘粘接材料层来将本发明的表面处理铜箔层叠在上述印刷电路板,将表面处理铜箔蚀刻掉(etch off)而使绝缘粘接剂露出后,进行电路形成的半加成法法(SAP),作为布线板的形成方法也是有用的。作为本发明的进一步发展的具体例,也可列举出:将上述带树脂的铜箔层叠在基材上并形成了电路的天线元件;借助粘接剂层层叠在玻璃、树脂薄膜并形成了图案的面板·显示器用电子材料;窗玻璃用电子材料;在本发明的表面处理铜箔上涂布导电性粘接剂而成的电磁波屏蔽·薄膜等。
实施例
利用以下的例子更具体地对本发明进行说明。
例1~8
(1)带载体的铜箔的制作
如图1所示,在作为载体12的电解铜箔上依次形成耐热金属层14、剥离层16、极薄铜箔层18及硅系表面处理层20来制作带载体的铜箔10。此时,硅系表面处理层20的成膜按照表1所示的各种条件来进行。具体的步骤如下。
(1a)载体的准备
准备厚度18μm、具有轮廓的算术平均偏差Ra为60~70nm的光泽面的电解铜箔(三井金属矿业株式会社制)作为载体12。对该载体进行酸洗处理。该酸洗处理如下进行:将载体浸渍于硫酸浓度150g/l、液温30℃的稀硫酸溶液30秒钟,从而去除表面氧化覆膜,水洗后进行干燥。
(1b)耐热金属层的形成
在酸洗处理后的载体12(电解铜箔)的光泽面侧,在以下的装置及条件下通过溅射形成厚度10nm的钛层作为耐热金属层14。
‐装置:卷绕型DC溅射装置(日本真空技术株式会社制、SPW-155)
‐靶:300mm×1700mm尺寸的钛靶
‐到达真空度Pu:不足1×10-4Pa
‐溅射压PAr:0.1Pa
‐溅射电力:30kW(5.88W/cm2)
(1c)剥离层的形成
在耐热金属层14(钛层)上,在以下的装置及条件下通过溅射形成厚度2nm的碳层作为剥离层16。
‐装置:卷绕型DC溅射装置(日本真空技术株式会社制、SPW-155)
‐靶:300mm×1700mm尺寸的碳靶
‐到达真空度Pu:不足1×10-4Pa
‐溅射压PAr:0.4Pa
‐溅射电力:20kW(3.92W/cm2)
(1d)极薄铜箔层的形成
在剥离层16(碳层)上,在以下的装置及条件下通过溅射形成膜厚250nm的极薄铜箔层18。用非接触表面形状测定机(Zygo株式会社制NewView5032)对得到的极薄铜箔层进行测定,结果具有轮廓的算术平均偏差(Ra)46nm的表面。
‐装置:卷绕型DC溅射装置(日本真空技术株式会社制、SPW-155)
‐靶:直径8英寸(203.2mm)的铜靶
‐到达真空度Pu:不足1×10-4Pa
‐气体:氩气(流量:100sccm)
‐溅射压:0.45Pa
‐溅射电力:1.0kW(3.1W/cm2)
(1e)硅系表面处理层的形成
在极薄铜箔层18上,在以下的装置及条件下通过溅射形成厚度6nm的硅层作为硅系表面处理层20,制作带载体的铜箔。
‐装置:卷绕型DC溅射装置(日本真空技术株式会社制、SPW-155)
‐靶:直径8英寸(203.2mm)的掺杂有硼200ppm的硅靶
‐到达真空度Pu:不足1×10-4Pa
‐气体:氩气(流量:100sccm)
甲烷气体(流量:0~3.0sccm)
二氧化碳气体(流量:0~1sccm)
水蒸汽气体(流量:0~5.0sccm)
‐溅射压:0.45Pa
‐溅射电力:250W(0.8W/cm2)
此时,将气体中的甲烷气体流量及二氧化碳气体控制为表1所示的值,使硅层中的氧浓度及碳浓度变化。
通过X射线光电子能谱(XPS)对硅系表面处理层20(硅层)表面进行元素分析,对将检测到的Si、C及O的元素的合计设为100原子%时的、作为对象的硅浓度、碳浓度及氧浓度(原子%)进行测定。该测定使用X射线光电子能谱(XPS)装置(ULVAC-PHI,Inc.制、Quantum2000),在功率:40W、X射线源:Al(使用单色仪)、X射线束直径:200μm、能量范围:0~1400eV、通能(pass energy):58.7eV、梯度:1.0eV、测定设定时间:5分钟、全程测定的条件下进行。以使用了相对灵敏度法的软件进行使用了所得全程光谱的对象元素的定量化。对于与通过XPS的定量测定的对象元素Si、C及O的测定谱相对应的轨道,Si为2p(3/2+1/2)、C为1s、O为1s。这样进行XPS测定,从而分别算出将Si、C及O这3种元素的总量设为100原子%时的Si元素、C元素及O元素的存在比率(原子%),作为硅浓度、碳浓度及氧浓度。另外,根据通过XPS测定得到的图,利用与2p轨道中的Si-O键能(104eV及532eV)及Si-C键能(100eV及283eV)相对应的峰的存在,进行Si-O键及Si-C键的确认。结果如表1所示。
进而,对硅系表面处理层20(硅层)表面进行基于高频辉光放电发光表面分析(GDS)的元素分析,测定硅系表面处理层20中的Si浓度。该测定使用高频辉光放电发光表面分析(GDS)装置(株式会社堀场制作所制、制品名JY-5000RF)进行测定。结果如表1所示。
(2)覆铜层叠板的制作
如图2所示,使用上述带载体的铜箔10和树脂基材26,如下地制作覆铜层叠板28。
(2a)树脂基材的制作
将4层加入玻璃布的由双马来酰亚胺·三嗪树脂形成的预浸料(三菱气体化学株式会社制、GHPL-830NS、厚度45μm),制作树脂基材26。
(2b)层叠
用带载体的铜箔10夹住上述树脂基材26的两面(图2中为了简化仅示出了单面的层叠),在加压温度:220℃、加压时间:90分钟、压力:40MPa的条件下层叠树脂基材26和带载体的铜箔10。如此得到带载体的覆铜层叠板25。
(2c)载体的剥离
手动将载体12从带载体的覆铜层叠板25的剥离层16剥离,使极薄铜箔层18的表面露出。需要说明的是,在耐热金属层14及剥离层16附着于载体12(电解铜箔)侧的状态下进行剥离。如此得到覆铜层叠板28。
(3)评价
对于如此得到的覆铜层叠板,进行(3a)剥离强度的评价、(3c)微细布线图案形成的评价、及(3d)利用TEM-EDX的界面观察及元素映射测定。另外,另行制作与上述覆铜层叠板所具有的硅系表面处理层同等的硅系表面处理层,也进行(3b)硅系表面处理层的绝缘电阻的评价。具体如下。
(3a)剥离强度的评价
如图3所示,由覆铜层叠板28制作剥离强度测定用样品32,对极薄铜箔层18的硅系表面处理层20与树脂基材26的剥离强度进行评价。剥离强度测定用样品32如下制作:在覆铜层叠板28使用硫酸铜镀液形成厚度18μm的电镀铜30,然后进行图案形成。另外,图案形成通过将形成的电镀铜以10mm宽进行掩蔽,并用氯化铜水溶液进行蚀刻来进行。
剥离强度的测定通过在角度90°、速度50mm/分钟的条件下对样品的剥离强度进行3点测定并采用其平均值来进行。如此得到的剥离强度(平均值)如表1所示。
(3b)硅系表面处理层的绝缘电阻的评价
制作分别与例1~6对应的硅系表面处理层的绝缘电阻测定用样品,并进行绝缘电阻的评价。绝缘电阻测定用样品的制作通过在玻璃基板(Corning Incorporated制、#1737)上面,在与上述“(1e)硅系表面处理层的形成”中记载的条件同样的条件下形成厚度100nm的硅系表面处理层(硅层)来进行。对如此得到的测定用样品,使用半导体器件·分析仪(Agilent Technologies制、B1500A)实施基于四端子法的测定,采用将所得比电阻值ρ(Ω·cm)换算成6nm的膜厚的、(ρ×100/6)的片电阻值(Ω/□)作为绝缘电阻的评价指标。结果如表1所示。
[表1]
(3c)微细布线图案形成的评价
如图4所示,在例1(比较例)及例3(实施例)中得到的覆铜层叠板28形成微细布线图案38,进行图案加工性的评价。首先,如下地制作微细布线图案评价用样品。
(i)光致抗蚀剂涂布
在覆铜层叠板28的极薄铜箔层18上面涂布正型光致抗蚀剂(东京应化工业株式会社制、TMMRP-W1000T)。
(ii)曝光处理
在以下的条件下对涂布有光致抗蚀剂的覆铜层叠板28进行曝光处理。
‐图案:线(Line)/间距(Space)=2/2μm、图案长2mm
‐玻璃掩膜:铬蒸镀掩膜
‐曝光量:180mJ/cm2(波长:365nm换算值、汞光谱线)
(iii)显影
在以下的条件下对经曝光处理的覆铜层叠板28进行显影处理,将光致抗蚀剂34如图4的(a)所示进行图案化。
‐显影液:TMAH水溶液(东京应化工业株式会社制、NMD-3)
‐温度:23℃
‐处理方法:浸渍1分钟×2次
(iv)电镀铜
在通过显影处理实施了图案化的覆铜层叠板28的极薄铜箔层18上,如图4的(b)所示地利用硫酸铜镀液以2μm的厚度形成电镀铜36。
(v)光致抗蚀剂的剥离
在以下的条件下将光致抗蚀剂34从施加有电镀铜36的覆铜层叠板28剥离,成为图4的(c)所示的状态。
‐剥离液:ST106水溶液(东京应化工业株式会社制)
‐温度:60℃
‐时间:5分钟
(vi)铜蚀刻(快速蚀刻)
在以下的条件下对剥离了光致抗蚀剂34的覆铜层叠板28进行铜蚀刻,如图4的(d)所示地形成微细布线图案38。
‐蚀刻液:硫酸-过氧化氢系蚀刻液(MEC Corporation制、QE7300)
‐处理方法:浸渍
‐温度:30℃
‐时间:30秒
(vii)显微镜观察
用光学显微镜(1750倍)对得到的微细布线图案的外观进行观察,确认布线的剥离的有无。其结果,例1(比较例)中观察到布线的剥离,另一方面,例3(实施例)中未观察到布线的剥离。将例3(实施例)中观察到的微细布线图案的SEM照片示于图5。
(3d)利用TEM-EDX的界面观察及元素映射测定
通过TEM-EDX对例3(实施例)中制作的带载体的覆铜层叠板25的截面中载体12、耐热金属层14、剥离层16、极薄铜箔层18、硅系表面处理层20及树脂基材26的界面进行观察。将得到的图像的极薄铜箔层18、硅系表面处理层20及树脂基材26的界面部分放大,并与通过EDX得到的Si元素映射图像进行核对,由此确认了在极薄铜箔层18的表面形成了硅系表面处理层20。
Claims (17)
1.一种表面处理铜箔,其具备:
铜箔;和
硅系表面处理层,其设置在所述铜箔的至少单面且主要包含硅(Si),并且在通过XPS(X射线光电子能谱)测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%,所述主要包含硅(Si)是指硅浓度高于碳浓度和氧浓度。
2.根据权利要求1所述的表面处理铜箔,其中,通过高频辉光放电发光表面分析装置(GDS)测定的硅系表面处理层中的硅的浓度为40~87原子%。
3.根据权利要求1所述的表面处理铜箔,其中,所述硅系表面处理层中的碳原子及氧原子与硅原子键合。
4.根据权利要求1所述的表面处理铜箔,其中,所述表面处理铜箔用于印刷电路板用覆铜层叠板的制造,在该制造中,树脂层被层叠于所述硅系表面处理层。
5.根据权利要求1所述的表面处理铜箔,其中,所述硅系表面处理层具有0.1~100nm的厚度。
6.根据权利要求1所述的表面处理铜箔,其中,所述铜箔的所述硅系表面处理层侧的表面具有根据JIS B 0601-2001测定的200nm以下的轮廓的算术平均偏差Ra。
7.根据权利要求1所述的表面处理铜箔,其中,所述硅系表面处理层的碳浓度为5.0~34.0原子%。
8.根据权利要求1所述的表面处理铜箔,其中,所述硅系表面处理层的氧浓度为20.0~35.0原子%。
9.根据权利要求1所述的表面处理铜箔,其中,所述铜箔具有50~3000nm的厚度。
10.一种印刷电路板用覆铜层叠板,其具备:
权利要求1~9中任一项所述的表面处理铜箔;和
密合于该硅系表面处理层而设置的树脂层。
11.一种印刷电路板,其包含将树脂层、硅系表面处理层及铜层依次层叠而成的层结构,
所述硅系表面处理层主要包含硅(Si),并且在通过XPS(X射线光电子能谱)测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%,所述主要包含硅(Si)是指硅浓度高于碳浓度和氧浓度。
12.根据权利要求11所述的印刷电路板,其中,所述硅系表面处理层中的碳原子及氧原子与硅原子键合。
13.一种权利要求1~9中任一项所述的表面处理铜箔的制造方法,其具备:
准备铜箔的工序;和
通过气相成膜在所述铜箔的至少单面形成硅系表面处理层的工序,
所述硅系表面处理层主要包含硅(Si),并且在通过XPS(X射线光电子能谱)测定的情况下,相对于碳(C)、氧(O)及硅(Si)这3种元素的总量100原子%,碳浓度为1.0~35.0原子%且氧浓度为12.0~40.0原子%,所述主要包含硅(Si)是指硅浓度高于碳浓度和氧浓度。
14.根据权利要求13所述的方法,其中,所述气相成膜是通过溅射来进行的。
15.根据权利要求14所述的方法,其中,所述溅射是使用硅靶和/或碳化硅靶与碳源及氧源一起进行的。
16.根据权利要求15所述的方法,其中,所述碳源为选自由甲烷、乙烷、丙烷、丁烷、乙炔及四乙氧基硅烷组成的组中的至少1种气体。
17.根据权利要求15或16所述的方法,其中,所述氧源为选自由二氧化碳(CO2)、氧气(O2)、二氧化氮(NO2)及一氧化氮(NO)组成的组中的至少1种气体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-091191 | 2015-04-28 | ||
JP2015091191 | 2015-04-28 | ||
PCT/JP2016/059464 WO2016174970A1 (ja) | 2015-04-28 | 2016-03-24 | 表面処理銅箔及びその製造方法、プリント配線板用銅張積層板、並びにプリント配線板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107532281A CN107532281A (zh) | 2018-01-02 |
CN107532281B true CN107532281B (zh) | 2020-01-24 |
Family
ID=57198574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680024855.5A Active CN107532281B (zh) | 2015-04-28 | 2016-03-24 | 表面处理铜箔及其制造方法、印刷电路板用覆铜层叠板、以及印刷电路板 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10763002B2 (zh) |
JP (1) | JP6030815B1 (zh) |
KR (1) | KR102138676B1 (zh) |
CN (1) | CN107532281B (zh) |
TW (1) | TWI684654B (zh) |
WO (1) | WO2016174970A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6854114B2 (ja) * | 2016-01-04 | 2021-04-07 | Jx金属株式会社 | 表面処理銅箔 |
KR101944784B1 (ko) | 2017-01-16 | 2019-02-08 | 일진머티리얼즈 주식회사 | 캐리어박 부착 극박동박 |
KR101944783B1 (ko) * | 2017-01-16 | 2019-04-18 | 일진머티리얼즈 주식회사 | 캐리어박 부착 극박동박 |
JP6492140B1 (ja) * | 2017-09-22 | 2019-03-27 | ジオマテック株式会社 | 樹脂基板積層体及び電子デバイスの製造方法 |
KR102613885B1 (ko) * | 2017-12-27 | 2023-12-15 | 미쓰이금속광업주식회사 | 캐리어를 구비한 구리박 |
KR20210000655A (ko) * | 2019-06-25 | 2021-01-05 | 엘지이노텍 주식회사 | 회로기판 |
US11439022B2 (en) * | 2019-09-02 | 2022-09-06 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board |
KR20210154512A (ko) * | 2020-06-12 | 2021-12-21 | 엘지이노텍 주식회사 | 회로기판 |
KR102640972B1 (ko) * | 2021-05-28 | 2024-02-23 | 부산대학교 산학협력단 | 실리콘이 코팅 된 구리 제조방법, 이를 이용한 실리콘이 코팅된 산화방지용 구리 및 이를 이용한 반도체 장치 |
WO2023211245A1 (ko) * | 2022-04-28 | 2023-11-02 | 부산대학교 산학협력단 | 실리콘이 코팅된 산화방지용 철, 실리콘이 코팅된 산화방지용 니켈 및 이들의 제조방법 |
WO2023243667A1 (ja) * | 2022-06-14 | 2023-12-21 | 株式会社 東芝 | セラミックス基板、セラミックス回路基板、半導体装置、セラミックス基板の製造方法、および、セラミックス分割基板の製造方法 |
CN117265470A (zh) * | 2023-07-11 | 2023-12-22 | 安徽立光电子材料股份有限公司 | 一种超薄复合铜箔的制备方法及超薄复合铜箔 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101528981A (zh) * | 2006-10-31 | 2009-09-09 | 三井金属矿业株式会社 | 表面处理铜箔、带有极薄底漆树脂层的表面处理铜箔、该表面处理铜箔的制造方法、以及带有极薄底漆树脂层的表面处理铜箔的制造方法 |
CN102089454A (zh) * | 2008-07-11 | 2011-06-08 | 三井金属矿业株式会社 | 表面处理铜箔 |
CN103199056A (zh) * | 2012-01-10 | 2013-07-10 | 国际商业机器公司 | 具有高机械强度的介电材料 |
CN104379668A (zh) * | 2012-06-12 | 2015-02-25 | 三菱瓦斯化学株式会社 | 树脂组合物、预浸料、覆金属箔层叠板及印刷布线板 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2990934B2 (ja) * | 1992-04-03 | 1999-12-13 | 日新電機株式会社 | メタライジングフィルム及びメタライジングフィルムの製造方法 |
AU2002241936A1 (en) * | 2001-01-22 | 2002-07-30 | N.V.Bekaert S.A. | Copper diffusion barriers |
DE10112561C2 (de) * | 2001-03-15 | 2003-12-18 | Infineon Technologies Ag | Verfahren zur Erzeugung von auf einem Substrat haftenden porösen organischen Schichten |
US7067437B2 (en) * | 2003-09-12 | 2006-06-27 | International Business Machines Corporation | Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same |
JP4397702B2 (ja) * | 2004-02-04 | 2010-01-13 | 三菱伸銅株式会社 | 金属化ポリイミドフィルムの製造方法 |
US7202564B2 (en) * | 2005-02-16 | 2007-04-10 | International Business Machines Corporation | Advanced low dielectric constant organosilicon plasma chemical vapor deposition films |
JP2007098732A (ja) * | 2005-10-03 | 2007-04-19 | Mitsui Mining & Smelting Co Ltd | 表面処理銅箔及びその表面処理銅箔の製造方法並びにその表面処理銅箔を用いた銅張積層板 |
JP2007266416A (ja) | 2006-03-29 | 2007-10-11 | Nippon Foil Mfg Co Ltd | プリント配線板用金属箔とそれを用いた積層板 |
JP2008198953A (ja) * | 2007-02-16 | 2008-08-28 | Hyomen Shori System:Kk | フレキシブル回路基板およびその製造方法 |
TW200836609A (en) | 2007-02-16 | 2008-09-01 | Metal Finishing System Co Ltd | Flexible circuit board and process for producing the same |
JP2008311328A (ja) * | 2007-06-13 | 2008-12-25 | Hyomen Shori System:Kk | フレキシブル回路基板およびその製造方法 |
US20100279092A1 (en) * | 2007-06-01 | 2010-11-04 | Lg Chem, Ltd. | Multiple-layer film and method for manufacturnig the same |
JP5333820B2 (ja) * | 2008-05-23 | 2013-11-06 | ソニー株式会社 | 二次電池用負極およびそれを備えた二次電池 |
JP5171690B2 (ja) * | 2009-02-27 | 2013-03-27 | 新日鉄住金化学株式会社 | 銅張積層板及びその製造方法 |
US7994888B2 (en) * | 2009-12-21 | 2011-08-09 | Volterra Semiconductor Corporation | Multi-turn inductors |
JP5367613B2 (ja) * | 2010-02-12 | 2013-12-11 | Jx日鉱日石金属株式会社 | プリント配線板用銅箔 |
JP5487010B2 (ja) * | 2010-05-27 | 2014-05-07 | 日本発條株式会社 | 回路基板用積層板及び金属ベース回路基板 |
EP2579686B1 (en) * | 2010-06-04 | 2018-07-25 | Mitsui Mining & Smelting Co., Ltd | Electrode foil and organic device |
JP5016712B2 (ja) * | 2010-09-21 | 2012-09-05 | 三井金属鉱業株式会社 | 電極箔および有機デバイス |
US20150284844A1 (en) * | 2012-11-09 | 2015-10-08 | Konica Minolta, Inc. | Electronic device and gas barrier film manufacturing method |
JPWO2014163062A1 (ja) * | 2013-04-02 | 2017-02-16 | コニカミノルタ株式会社 | ガスバリアー性フィルムの製造方法、ガスバリアー性フィルム及び電子デバイス |
KR20150042124A (ko) * | 2013-10-10 | 2015-04-20 | 삼성전기주식회사 | 표면처리 동박, 이를 포함하는 동박적층판, 이를 이용한 인쇄회로기판 및 그 제조방법 |
US10069226B2 (en) * | 2017-01-31 | 2018-09-04 | Murrelektronik, Inc. | Power distribution module |
-
2016
- 2016-03-24 WO PCT/JP2016/059464 patent/WO2016174970A1/ja active Application Filing
- 2016-03-24 CN CN201680024855.5A patent/CN107532281B/zh active Active
- 2016-03-24 KR KR1020177025492A patent/KR102138676B1/ko active IP Right Grant
- 2016-03-24 US US15/567,166 patent/US10763002B2/en active Active
- 2016-03-24 JP JP2016544484A patent/JP6030815B1/ja active Active
- 2016-03-30 TW TW105110088A patent/TWI684654B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101528981A (zh) * | 2006-10-31 | 2009-09-09 | 三井金属矿业株式会社 | 表面处理铜箔、带有极薄底漆树脂层的表面处理铜箔、该表面处理铜箔的制造方法、以及带有极薄底漆树脂层的表面处理铜箔的制造方法 |
CN102089454A (zh) * | 2008-07-11 | 2011-06-08 | 三井金属矿业株式会社 | 表面处理铜箔 |
CN103199056A (zh) * | 2012-01-10 | 2013-07-10 | 国际商业机器公司 | 具有高机械强度的介电材料 |
CN104379668A (zh) * | 2012-06-12 | 2015-02-25 | 三菱瓦斯化学株式会社 | 树脂组合物、预浸料、覆金属箔层叠板及印刷布线板 |
Also Published As
Publication number | Publication date |
---|---|
US20180151268A1 (en) | 2018-05-31 |
TW201710528A (zh) | 2017-03-16 |
WO2016174970A1 (ja) | 2016-11-03 |
KR102138676B1 (ko) | 2020-07-28 |
KR20170116129A (ko) | 2017-10-18 |
JPWO2016174970A1 (ja) | 2017-05-18 |
TWI684654B (zh) | 2020-02-11 |
US10763002B2 (en) | 2020-09-01 |
JP6030815B1 (ja) | 2016-11-24 |
CN107532281A (zh) | 2018-01-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107532281B (zh) | 表面处理铜箔及其制造方法、印刷电路板用覆铜层叠板、以及印刷电路板 | |
TWI587757B (zh) | Copper foil, copper foil with carrier foil, and copper clad laminate | |
CN108699673B (zh) | 带载体的铜箔、以及带布线层的无芯支撑体和印刷电路板的制造方法 | |
TWI697412B (zh) | 附載體銅箔、附樹脂銅箔、及印刷電路板之製造方法 | |
JP5925981B1 (ja) | 表面処理銅箔及びその製造方法、プリント配線板用銅張積層板、並びにプリント配線板 | |
WO2014192895A1 (ja) | 銅箔、キャリア付銅箔、銅張積層体、プリント配線板、半導体パッケージ用回路形成基板、半導体パッケージ、電子機器、樹脂基材、回路の形成方法、セミアディティブ工法、プリント配線板の製造方法 | |
JP2017088971A (ja) | キャリア付銅箔、キャリア付銅箔の製造方法、積層体、プリント配線板の製造方法及び電子機器の製造方法 | |
JP6466235B2 (ja) | キャリア付銅箔、キャリア付銅張積層板、及びプリント配線板の製造方法 | |
JP5859078B1 (ja) | キャリア付銅箔の製造方法、銅張積層板の製造方法、プリント配線板の製造方法、及び、電子機器の製造方法 | |
JP6570430B2 (ja) | キャリア付銅箔の製造方法、プリント配線板の製造方法及び電子機器の製造方法 | |
WO2016107649A1 (en) | Peelable copper foils, manufacturing method of coreless substrate, and coreless substrate obtained by the manufacturing method | |
JP5919345B2 (ja) | キャリア付銅箔の製造方法、銅張積層板の製造方法、プリント配線板の製造方法、電子機器の製造方法、キャリア付銅箔、銅張積層板、プリント配線板及び電子機器 | |
JP2016050362A (ja) | キャリア付銅箔の製造方法、銅張積層板の製造方法、プリント配線板の製造方法、電子機器の製造方法、キャリア付銅箔 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |