CN107507826A - 一种带抗硫化反光底层的led封装结构 - Google Patents

一种带抗硫化反光底层的led封装结构 Download PDF

Info

Publication number
CN107507826A
CN107507826A CN201710698167.3A CN201710698167A CN107507826A CN 107507826 A CN107507826 A CN 107507826A CN 201710698167 A CN201710698167 A CN 201710698167A CN 107507826 A CN107507826 A CN 107507826A
Authority
CN
China
Prior art keywords
led
sulfuration resistant
reflective
glue
functional areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710698167.3A
Other languages
English (en)
Inventor
王俊华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong LCLED Lighting Co Ltd
Original Assignee
Guangdong LCLED Lighting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong LCLED Lighting Co Ltd filed Critical Guangdong LCLED Lighting Co Ltd
Priority to CN201710698167.3A priority Critical patent/CN107507826A/zh
Publication of CN107507826A publication Critical patent/CN107507826A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开了一种带抗硫化反光底层的LED封装结构,包括LED支架,所述LED支架上设有用于封装LED芯片的封装腔体,及由所述封装腔体底部绝缘体划分的功能区,所述功能区上设有LED芯片,所述功能区为在铜板上电镀的银层,所述封装腔体的内侧设有反光壁,所述银层上喷涂有抗硫化反光胶层,所述抗硫化反光胶层为含氟化聚合物的白色胶体,所述封装腔体内填充有荧光胶,LED支架在固晶焊线后通过喷胶机将白色胶体喷涂到银层部位,烤干后在功能区上会形成一层白色薄膜并具有反光效果的耐温保护层,对硫元素具有拦截性,有效防止硫元素与银层发生反应生成硫化银,从而提高产品可靠性。

Description

一种带抗硫化反光底层的LED封装结构
技术领域
本发明涉及LED封装技术领域,特别是涉及一种带抗硫化反光底层的LED封装结构。
背景技术
目前LED行业内灯珠支架功能区一般为银或镀银,很容易会出现硫化发黑的情况,使灯珠出现光衰、色飘等问题。为了改善此问题都要会使用一种类似于液体的抗硫化融液在固晶焊线后喷洒在灯珠内部,烤干后再进行点胶。这种方法融液会直接喷到晶片表面,烤干后的融液会变成一层薄薄的透明的硬膜层,影响了胶体与支架及晶片的结合容易出现分离现象,在高温老化的过程中容易也现死灯,黄变等情况。
发明内容
为克服现有技术的不足,本发明提供一种带抗硫化反光底层的LED封装结构,有效提高产品的品质。
本发明为解决其问题所采用的技术方案是:
一种带抗硫化反光底层的LED封装结构,包括LED支架,所述LED支架上设有用于封装LED芯片的封装腔体,及由所述封装腔体底部绝缘体划分的功能区,所述功能区上设有LED芯片,所述功能区为在铜板上电镀的银层,所述封装腔体的内侧设有反光壁,所述银层上喷涂有抗硫化反光胶层,所述抗硫化反光胶层为含氟化聚合物的白色胶体,所述封装腔体内填充有荧光胶。
优选的,所述反光壁为碗状斜面,所述反光壁上设有反光层并沿斜面延伸至封装腔体的顶部并与荧光胶的上端面持平。
优选的,所述封装腔体底部的非功能区及反光层上均喷涂有保护层,所述保护层与抗硫化反光胶层的厚度一致。
优选的,所述反光层为PCT或EMC材质,所述保护层为硅烷偶联剂。
更优选的,所述绝缘体为绝缘肋板。
更优选的,所述银层的厚度为40-80μm。
更优选的,所述抗硫化反光胶层的厚度小于所述LED芯片的厚度。
优选的,所述功能区包括四个导电区域,各导电区域沿所述LED支架由内向外延伸至LED支架外部两侧形成导电引脚,所述导电区域以两个为一组对称排布于所述LED支架上,每组的两导电区域之间连接有LED芯片。
优选的,所述导电引脚的端部向内折弯并沿LED支架底部延伸。
优选的,所述LED支架的材质为高分子非导电性材料。
本发明的有益效果是:本发明采用含氟化聚合物的白色胶体作为抗硫化反光胶层,是一种拥有硅胶的耐热性和延展性,又有很好致密性与反光性的白色胶体,LED支架在固晶焊线后通过喷胶机将白色胶体喷涂到银层部位,烤干后在功能区上会形成一层具有反光效果的白色薄膜,并具有耐温保护作用,对硫元素具有拦截性,有效防止硫元素与银层发生反应生成硫化银,从而提高产品可靠性。
附图说明
图1是本发明的LED封装结构的俯视结构示意图;
图2是本发明的LED封装结构的剖面结构示意图。
具体实施方式
下面结合附图和实例对本发明作进一步说明。
如图1和2所示,本发明提供一种带抗硫化反光底层的LED封装结构,包括LED支架1,所述LED支架上设有用于封装LED芯片3的封装腔体2,及由所述封装腔体2底部的绝缘体9划分的功能区,所述功能区上设有LED芯片3,所述功能区为在铜板上电镀的银层,所述封装腔体2的内侧设有反光壁5,所述银层上喷涂有抗硫化反光胶层4,所述抗硫化反光胶层4为含氟化聚合物的白色胶体,所述封装腔体2内填充有荧光胶。
具体的,含氟化聚合物的白色胶体还包括有硅胶及一些有机材料,该含氟化聚合物的白色胶体是一种拥有硅胶的耐热性和延展性,又有很好致密性与反光性的白色胶体,LED支架1在固晶焊线后通过喷胶机将白色胶体喷涂到银层部位,且不会喷到LED芯片3上,烤干后在功能区上会形成一层具有反光效果的白色薄膜,并具有耐温保护作用,它的低表面洁性对于碳氢油类、硅泊、合成液及水溶剂都有极佳的抵抗性,对硫元素具有拦截性,有效防止硫元素与银层发生反应生成硫化银,从而提高产品可靠性。
实施例中,所述反光壁5为碗状斜面,所述反光壁5上设有反光层6并沿斜面延伸至封装腔体2的顶部并与荧光胶的上端面持平,该封装腔体2底部的非功能区及反光层6上均喷涂有保护层7,所述保护层7与抗硫化反光胶层4的厚度一致。其中,所述反光层6为PCT或EMC材质,所述保护层7为硅烷偶联剂,该保护层7具有耐高温、抗腐蚀、抗衰性等作用;所述绝缘体9为绝缘肋板,所述银层的厚度为40-80μm,所述抗硫化反光胶层4的厚度小于所述LED芯片3的厚度。利用保护层7覆盖在反光层6上,能有效保护反光壁5,在反光壁5的反射作用下,大大提高产品的亮度,保证出光效率。且非功能区也涂有保护层7,在长期高温状态工作时也有利于避免银层产生硫化,进而造成产品的衰减过大或者造成产品失效,提升产品质量。
该实施例中,所述功能区包括四个导电区域8,各导电区域8沿所述LED支架1由内向外延伸至LED支架1外部两侧形成导电引脚10,所述导电区域8以两个为一组对称排布于所述LED支架1上,每组的两导电区域8之间连接有LED芯片3,其中,所述导电引脚10的端部向内折弯并沿LED支架1底部延伸,采用的LED支架1的材质为高分子非导电性材料。这样,封装后的LED灯珠产品可以随着外部电路与导电引脚10连接的不同方式实现串并的切换,从而改变灯珠正常工作时所需的电流、电压。
以上所述,只是本发明的较佳实施例而已,本发明并不局限于上述实施方式,只要其以相同的手段达到本发明的技术效果,都应属于本发明的保护范围。

Claims (10)

1.一种带抗硫化反光底层的LED封装结构,包括LED支架,所述LED支架上设有用于封装LED芯片的封装腔体,及由所述封装腔体底部绝缘体划分的功能区,所述功能区上设有LED芯片,所述功能区为在铜板上电镀的银层,其特征在于:所述封装腔体的内侧设有反光壁,所述银层上喷涂有抗硫化反光胶层,所述抗硫化反光胶层为含氟化聚合物的白色胶体,所述封装腔体内填充有荧光胶。
2.根据权利要求1所述的带抗硫化反光底层的LED封装结构,其特征在于:所述反光壁为碗状斜面,所述反光壁上设有反光层并沿斜面延伸至封装腔体的顶部并与荧光胶的上端面持平。
3.根据权利要求2所述的带抗硫化反光底层的LED封装结构,其特征在于:所述封装腔体底部的非功能区及反光层上均喷涂有保护层,所述保护层与抗硫化反光胶层的厚度一致。
4.根据权利要求3所述的带抗硫化反光底层的LED封装结构,其特征在于:所述反光层为PCT或EMC材质,所述保护层为硅烷偶联剂。
5.根据权利要求1-4任一所述的带抗硫化反光底层的LED封装结构,其特征在于:所述绝缘体为绝缘肋板。
6.根据权利要求1-4任一所述的带抗硫化反光底层的LED封装结构,其特征在于:所述银层的厚度为40-80μm。
7.根据权利要求6所述的带抗硫化反光底层的LED封装结构,其特征在于:所述抗硫化反光胶层的厚度小于所述LED芯片的厚度。
8.根据权利要求1所述的带抗硫化反光底层的LED封装结构,其特征在于:所述功能区包括四个导电区域,各导电区域沿所述LED支架由内向外延伸至LED支架外部两侧形成导电引脚,所述导电区域以两个为一组对称排布于所述LED支架上,每组的两导电区域之间连接有LED芯片。
9.根据权利要求8所述的带抗硫化反光底层的LED封装结构,其特征在于:所述导电引脚的端部向内折弯并沿LED支架底部延伸。
10.根据权利要求8所述的带抗硫化反光底层的LED封装结构,其特征在于:所述LED支架的材质为高分子非导电性材料。
CN201710698167.3A 2017-08-15 2017-08-15 一种带抗硫化反光底层的led封装结构 Pending CN107507826A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710698167.3A CN107507826A (zh) 2017-08-15 2017-08-15 一种带抗硫化反光底层的led封装结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710698167.3A CN107507826A (zh) 2017-08-15 2017-08-15 一种带抗硫化反光底层的led封装结构

Publications (1)

Publication Number Publication Date
CN107507826A true CN107507826A (zh) 2017-12-22

Family

ID=60691774

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710698167.3A Pending CN107507826A (zh) 2017-08-15 2017-08-15 一种带抗硫化反光底层的led封装结构

Country Status (1)

Country Link
CN (1) CN107507826A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110034223A (zh) * 2019-03-13 2019-07-19 东莞中之光电股份有限公司 一种大功率白光led灯珠

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102394265A (zh) * 2011-12-01 2012-03-28 广东粤华新光电科技有限公司 一种贴片式全彩led元件的制作方法
CN202474032U (zh) * 2011-12-23 2012-10-03 惠州市华阳多媒体电子有限公司 Led封装结构
CN103107276A (zh) * 2012-12-07 2013-05-15 孙雪刚 一种led封装结构
KR20140087249A (ko) * 2012-12-28 2014-07-09 일진엘이디(주) 발광 다이오드 패키지 및 그 제조 방법
CN204088364U (zh) * 2014-07-24 2015-01-07 常州欧密格光电科技有限公司 超薄超小正发光双色led元件
CN104409604A (zh) * 2014-12-01 2015-03-11 深圳市晶台股份有限公司 一种新型led支架制作方法及封装的应用
CN204834689U (zh) * 2015-08-07 2015-12-02 佛山市国星光电股份有限公司 一种高防硫化led封装结构
CN205069681U (zh) * 2015-10-26 2016-03-02 陕西光电科技有限公司 一种耐高温抗硫化smd led器件
CN105789418A (zh) * 2014-12-18 2016-07-20 惠州市华瑞光源科技有限公司 胶状物及发光二极管封装结构
CN207165567U (zh) * 2017-08-15 2018-03-30 广东聚科照明股份有限公司 一种带抗硫化反光底层的led封装结构

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102394265A (zh) * 2011-12-01 2012-03-28 广东粤华新光电科技有限公司 一种贴片式全彩led元件的制作方法
CN202474032U (zh) * 2011-12-23 2012-10-03 惠州市华阳多媒体电子有限公司 Led封装结构
CN103107276A (zh) * 2012-12-07 2013-05-15 孙雪刚 一种led封装结构
KR20140087249A (ko) * 2012-12-28 2014-07-09 일진엘이디(주) 발광 다이오드 패키지 및 그 제조 방법
CN204088364U (zh) * 2014-07-24 2015-01-07 常州欧密格光电科技有限公司 超薄超小正发光双色led元件
CN104409604A (zh) * 2014-12-01 2015-03-11 深圳市晶台股份有限公司 一种新型led支架制作方法及封装的应用
CN105789418A (zh) * 2014-12-18 2016-07-20 惠州市华瑞光源科技有限公司 胶状物及发光二极管封装结构
CN204834689U (zh) * 2015-08-07 2015-12-02 佛山市国星光电股份有限公司 一种高防硫化led封装结构
CN205069681U (zh) * 2015-10-26 2016-03-02 陕西光电科技有限公司 一种耐高温抗硫化smd led器件
CN207165567U (zh) * 2017-08-15 2018-03-30 广东聚科照明股份有限公司 一种带抗硫化反光底层的led封装结构

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110034223A (zh) * 2019-03-13 2019-07-19 东莞中之光电股份有限公司 一种大功率白光led灯珠

Similar Documents

Publication Publication Date Title
CN100438111C (zh) 发光二极管封装结构的制作方法
US20150028373A1 (en) Light emitting device and method of manufacturing light emitting device
JP5569389B2 (ja) 発光装置の製造方法及び発光装置
CN102593333B (zh) 发光装置封装及其制造方法
JP5772293B2 (ja) 発光装置及びその製造方法
CN202423377U (zh) 一种防水的贴片led
CN207165567U (zh) 一种带抗硫化反光底层的led封装结构
TW201210093A (en) LED package structure for increasing heat-dissipating efficiency and method of making the same
CN107507826A (zh) 一种带抗硫化反光底层的led封装结构
CN105789418A (zh) 胶状物及发光二极管封装结构
CN102420282A (zh) 发光二极管封装结构及其制造方法
CN104037302A (zh) 一种led封装组件
CN106449940A (zh) 一种led封装器件及其制备方法
CN201017901Y (zh) 发光二极管的封装结构
TWI597865B (zh) Optical semiconductor device
CN102194975A (zh) 光半导体封装体及光半导体装置
KR20160097332A (ko) 광 반도체 장치 및 그 제조 방법, 및 은용 표면 처리제 및 발광 장치
CN207441736U (zh) 一种高可靠性的led封装器件
CN104718620B (zh) 发光装置
CN109585630A (zh) Led封装结构及其制备方法,以及led灯
JP6203478B2 (ja) 光半導体装置、その製造方法、その製造に用いる基体およびリフレクタ成型体
CN103107264A (zh) 集成led光源封装支架
CN112786769A (zh) 一种防硫化led器件及其制备方法
CN104969372B (zh) 发光装置
CN204732451U (zh) 倒装led封装结构

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination