CN107422605B - 正性光刻胶组合物、过孔的形成方法、显示基板及显示装置 - Google Patents
正性光刻胶组合物、过孔的形成方法、显示基板及显示装置 Download PDFInfo
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- CN107422605B CN107422605B CN201710651692.XA CN201710651692A CN107422605B CN 107422605 B CN107422605 B CN 107422605B CN 201710651692 A CN201710651692 A CN 201710651692A CN 107422605 B CN107422605 B CN 107422605B
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Abstract
本发明提供一种正性光刻胶组合物、过孔的形成方法、显示基板及显示装置,涉及显示技术领域,该正性光刻胶组合物中包括有光致异构化合物,受到紫外光照射后结构转变为分子极性程度增加的离子结构,降低了该正性光刻胶与有机膜层间的附着力,有利于过孔形成后的剥离,提高产品的生产良率。该正性光刻胶组合物包括,主体胶材、光敏剂;光致异构化合物;所述光致异构化合物受到紫外光照射后结构转变为分子极性程度增加的离子结构。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种正性光刻胶组合物、过孔的形成方法、显示基板及显示装置。
背景技术
光刻工艺是薄膜晶体管阵列制造过程中必不可少的一道制程,起到图案转移的作用。在待刻蚀的洁净薄膜上涂覆光刻胶,通过软烘、曝光、显影、后烘等工序,获得设计好的掩模版图案(即光刻胶图案),之后对光刻胶图案露出的薄膜区域进行刻蚀,形成与光刻胶图案一致的目标图案,再剥离残留的光刻胶图案,以露出该目标图案进行后续的制程。
光刻制程的实施离不开光刻胶,光刻胶的主体成分是一类含光敏性基团的聚合物,在紫外光照条件下,受光照部分的光敏基团发生一系列化学变化,导致光刻胶感光部分和未受光照部分在显影液中的溶解性产生明显差异,从而在显影后形成特定的图案。
薄膜晶体管阵列制造过程中通常要经过数道光刻制程,包括金属膜层制程、无机绝缘层(如氧化硅SiOx、氮化硅SiNx)制程、有源层制程、ITO(Indium Tin Oxide,氧化铟锡)层制程等。目前在氧化物型阵列基板(即Oxide背板)制作工艺中,无机钝化层(PassivationLaye,PVX)上通常涂覆有一层有机膜层,起保护下方膜层并提供一个平坦化衬底的作用。有机膜层上具有露出下方PVX层的有机膜孔,在有机膜孔内进行过孔(即Via孔)工艺,具体包括有光刻、刻蚀、剥离工艺,从而在PVX层上形成Via孔。
然而,有机膜层通常由非极性的有机材料构成,光刻胶中的主体成分聚合物也为非极性的有机材料(如苯酚-甲醛聚合物),在形成Via孔的过程中,光刻胶直接涂敷在极性与其相似的有机膜上,光刻胶与有机膜层之间的附着力较大,易发生Via孔刻蚀后光刻胶剥离不彻底的问题,即发生光刻胶残留,影响Oxide背板的后续制程,降低生产良率。
发明内容
鉴于此,为解决现有技术的问题,本发明的实施例提供一种正性光刻胶组合物、过孔的形成方法、显示基板及显示装置,该正性光刻胶组合物中包括有光致异构化合物,受到紫外光照射后结构转变为分子极性程度增加的离子结构,降低了该正性光刻胶与有机膜层间的附着力,有利于过孔形成后的剥离,提高产品的生产良率。
为达到上述目的,本发明的实施例采用如下技术方案:
第一方面、本发明实施例提供了一种正性光刻胶组合物,所述正性光刻胶组合物包括,主体胶材、光敏剂;所述光刻胶组合物还包括,光致异构化合物;所述光致异构化合物受到紫外光照射后结构转变为分子极性程度增加的离子结构。
优选的,所述光致异构化合物包括螺吡喃化合物、螺噁嗪化合物、氮丙啶化合物、联吡啶化合物中的至少一种。
作为一种可选的方式,所述螺吡喃化合物的结构通式为,
其中,所述R1基团包括,烷基链、醚链、丁基、戊基、己基、苯基、(CH2CH2O)nCH3中的任一种,n为整数,且1≤n≤5;所述R2基团包括羧基或羟基。
作为另一种可选的方式,所述螺吡喃化合物的结构式为,
其中,n为整数,且4≤n≤10;所述R基团包括羧基或羟基。
可选的,所述螺噁嗪化合物的结构通式为,
其中,所述R1基团为CH2CH2OH;所述R2基团包括羧基或羟基。
可选的,所述氮丙啶化合物的结构通式为,
其中,所述R基团为C2H4OH。
可选的,所述联吡啶化合物的结构通式为,
其中,所述R1基团包括氢、甲基、乙基、丙基、丁基、醚链中的任一种;所述R2基团包括羧甲基、羧乙基、羧丙基中的任一种;所述R3基团包括氢、甲基、乙基、丙基、丁基、醚链中的任一种;所述R4基团包括羧甲基、羧乙基、羧丙基中的任一种。
可选的,所述正性光刻胶组合物还包括溶剂和添加剂;其中,所述主体胶材占所述正性光刻胶组合物总重量的5%~30%;所述光敏剂占所述正性光刻胶组合物总重量的2%~5%;所述光致异构化合物占所述正性光刻胶组合物总重量的0.1%~2%;所述添加剂占所述正性光刻胶组合物总重量的0.1%~1%;所述溶剂占所述正性光刻胶组合物总重量的62%~92.8%。
优选的,所述主体胶材为酚醛树脂;和/或,所述光敏剂为重氮萘醌型光敏剂;和/或,所述溶剂为N-甲基吡咯烷酮、二甲基亚砜、丙二醇单甲醚乙酸酯、乙酸乙氧乙酯、二甲氧基乙醛中的任一种。
第二方面、本发明实施例提供了一种过孔的形成方法,所述形成方法包括,在基板上依次形成钝化层和有机膜层;所述有机膜层上具有露出所述钝化层的区域;形成覆盖所述有机膜层和所述钝化层的光刻胶层;所述光刻胶层由上述任一项所述的正性光刻胶组合物构成,且所述有机膜层与所述正性光刻胶组合物受光照前的极性相似;采用构图工艺对所述光刻胶层和露出的所述钝化层进行处理,形成贯穿钝化层的过孔,覆盖在所述有机膜层以及被所述有机膜层露出的所述钝化层上的光刻胶保留部分;对所述光刻胶保留部分进行紫外光照射,以使所述正性光刻胶组合物中的致异构化合物的结构转变为分子极性程度增加的离子结构;通过剥离液去除所述光刻胶保留部分。
可选的,所述紫外光照射的波长范围为330~380nm,光照强度为1~10mW/CM2。
第三方面、本发明实施例提供了另一种过孔的形成方法,所述形成方法包括,在基板上依次形成有机膜层、光刻胶层;其中,所述光刻胶层由上述任一项所述的正性光刻胶组合物构成;所述有机膜层与所述正性光刻胶组合物受光照前的极性相似;采用构图工艺对所述光刻胶层和所述有机膜层进行处理,形成贯穿所述有机膜层的过孔和覆盖在所述有机膜层除所述过孔所在区域之外的光刻胶保留部分;对所述光刻胶保留部分进行紫外光照射,以使所述正性光刻胶组合物中的光致异构化合物的结构转变为分子极性程度增加的离子结构;通过剥离液去除所述光刻胶保留部分。
可选的,所述紫外光照射的波长范围为330~380nm,光照强度为1~10mW/CM2。
第四方面、本发明实施例提供了一种显示基板,所述显示基板上的过孔采用上述所述的过孔的形成方法形成。
第五方面、本发明实施例提供了一种显示装置,包括上述的显示基板。
基于此,本发明实施例提出一种新型正性光刻胶组合物,该正性光刻胶组合物中包括有光致异构化合物,受到紫外光照射后结构转变为分子极性程度增加的离子结构,降低了该正性光刻胶与有机膜层间的附着力,有利于过孔形成后的剥离,提高了形成有该过孔的TFT背板的生产良率,并进一步提高了基于该TFT背板的LCD装置和OLED装置的显示质量。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例1中提供的一种螺吡喃化合物的结构通式示意图;
图2为发明实施例1中提供的N-羟乙基-6-羟基螺吡喃的合成反应示意图;
图3为本发明实施例1中提供的一种螺吡喃化合物的具体结构示意图;
图4为图3所示的螺吡喃化合物的合成反应示意图;
图5为本发明实施例1中提供的一种螺吡喃化合物在紫外光照下的异构化示意图;
图6为本发明实施例1中提供的一种螺吡喃化合物在紫外光照下表面水接触角变化示意图;
图7为本发明实施例1中提供的一种螺噁嗪化合物的结构通式示意图;
图8为发明实施例1中提供的N-丁基-5'-羧基-5,7-二甲氧基螺苯并噁嗪的合成反应示意图;
图9为本发明实施例1中提供的一种螺噁嗪化合物在紫外光照下的异构化示意图;
图10为本发明实施例1中提供的一种氮丙啶化合物的结构通式示意图;
图11为本发明实施例1中提供的一种氮丙啶化合物在紫外光照下的异构化示意图;
图12为本发明实施例1中提供的一种联吡啶化合物的结构通式示意图;
图13为本发明实施例1中提供的一种联吡啶化合物在紫外光照下的异构化示意图;
图14为本发明实施例2中提供的一种过孔的形成方法流程示意图。
附图标记:
101-基板;102-钝化层;103-有机膜层;104-有机膜过孔;105-光刻胶层;105a-光刻胶保留部分;106-贯穿钝化层的过孔。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
需要指出的是,除非另有定义,本发明实施例中所使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员共同理解的相同含义。还应当理解,诸如在通常字典里定义的那些术语应当被解释为具有与它们在相关技术的上下文中的含义相一致的含义,而不应用理想化或极度形式化的意义来解释,除非这里明确地这样定义。
例如,本发明专利申请说明书以及权利要求书中所使用的术语“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,仅是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“上/上方”、等指示的方位或位置关系的术语为基于附图所示的方位或位置关系,仅是为了便于说明本发明的技术方案的简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
实施例1
本发明实施例1提供了一种正性光刻胶组合物,该正性光刻胶组合物包括,主体胶材、光敏剂以及光致异构化合物;该光致异构化合物受到紫外光照射后结构转变为分子极性程度增加的离子结构。
需要说明的是,上述光致异构化合物作为一种光诱导剂,其结构上的特征基团在受到紫外光照前为闭环态结构,受到一定波长的紫外线照射后,其闭环态结构变化并伴随极性变化,转变为开环的电荷分离的双离子形式,电子排布发生变化,形成电荷分布不均的类似于离子化合物的结构(即离子结构),即受光照后极性增加,其分子结构呈现出极性(或弱极性)。
这里,紫外光的波长可根据光诱导剂光致异构化合物的具体结构灵活调整,本发明实施例对此不作限定。
上述光刻胶组合物为正性,即曝光前不溶解于显影液,经紫外线曝光后,受光照的部分化学性质发生转变,能够溶解于显影液从而被去除。
这样一来,在利用上述正性光刻胶组合物进行光刻制程时,通过相应的掩模版对该正性光刻胶组合物进行曝光、显影处理,形成未受光照的光刻胶保留部分和受光照后溶解于显影液的去除区域。对光刻胶去除区域下方的膜层进行相应的刻蚀工艺,以形成过孔。而在过孔形成后,对光刻胶保留部分进行紫外线照射,可使光致异构化合物极性增加,降低残留的光刻胶与下方有机膜层的附着力,从而有利于残留光刻胶的剥离。
基于此,本发明实施例提出一种新型正性光刻胶组合物,该正性光刻胶组合物中包括有光致异构化合物,受到紫外光照射后结构转变为分子极性程度增加的离子结构,降低了该正性光刻胶与有机膜层间的附着力,有利于过孔形成后的剥离,提高了形成有该过孔的TFT(Thin Film Transistor,薄膜晶体管)背板的生产良率,并进一步提高了基于该TFT背板的LCD(Liquid Crystal Display,液晶显示)装置和OLED(Organic Light-Emitting Display,有机电致发光显示)装置的显示质量。
具体的,上述的光致异构化合物包括螺吡喃类的化合物、螺噁嗪类的化合物、氮丙啶类的化合物、联吡啶类的化合物中的至少一种。上述化合物中均具有螺碳-氧键,受紫外光照后可发生异裂,开环形成反式离子结构。
下面对上述各种化合物作详细说明。
螺吡喃化合物
如图1所示,为螺吡喃化合物的结构通式。其中,R1基团包括,烷基链、醚链、丁基、戊基、己基、苯基、(CH2CH2O)nCH3中的任一种,n为整数,且1≤n≤5;R2基团包括羧基(-COOH)或羟基(-OH)。
这里,由于显影液通常为呈碱性的TMAH(Tetra Methyl Ammonium Hydroxide,四甲基氢氧化铵)水溶液,TMAH的质量分数2%-3%。为了保证上述正性光刻胶在曝光后受光照部分在显影单元被显影液去除,R2基团可以为在碱性中易溶的-COOH或-OH基团。
螺吡喃化合物可以通过吲哚与羟基苯甲醛在三乙胺存在下在无水乙醇中回流制备而成。
以N-羟乙基-6-羟基螺吡喃为例,该螺吡喃化合物的具体合成方法为,如图2所示,将2,3,3-三甲基吲哚与碘代正丁烷经烷基化反应形成N-羟乙基-2,3,3-三甲基吲哚碘盐;生成的N-羟乙基-2,3,3-三甲基吲哚碘盐与2,5-二羟基苯甲醛在三乙胺存在下在无水乙醇中回流制备出N-羟乙基-6-羟基螺吡喃。
上述螺吡喃化合物的结构具体也可以为如图3所示,其结构式两端的螺吡喃基团在紫外光照射下可发生异构化,开环形成极性反式离子结构。其中,n为整数,且4≤n≤10,以保证作为诱导剂的该螺吡喃化合物在上述正性光刻胶组合物中的相容性,并保证受光照前光刻胶层和有机膜层间具有一定的粘附力,以避免在光照前出现脱胶现象,影响后续的膜层刻蚀。R基团可以为-COOH或-OH基团,以保证紫外光照后受光照部分在显影单元被去除。
如图4所示,该螺吡喃化合物可通过羧基PEG(Polyethylene Glycol,聚乙二醇)与羟基螺吡喃在碱性催化剂存在下反应制得。其中,碱性催化剂例如可以为DMAP(4-Dimethylaminopyridine,4-二甲氨基吡啶)。
上述螺吡喃化合物在紫外光照下的异构化过程如图5所示,螺吡喃类化合物在紫外(Ultraviolet,UV)光照情况下,螺碳-氧键发生异裂,开环形成电荷分离的反式离子结构,其中性SP结构(即螺环结构)转变为极性更强的MC结构(即花菁开环结构),使得光照后其亲水性增加,即极性增加。在水相或者其它强极性分散剂中,亲水性的增加将会降低分散剂在其表面的界面张力。将螺吡喃的四氢呋喃溶液在载玻片上旋涂成膜,将水滴滴在膜上,待水滴平衡一定时间(如30s)后,测量在不同紫外光照时间条件下水滴在螺吡喃的四氢呋喃溶液膜表面的接触角的变化。如图6所示,在10mW/cm2的UV光照强度下,一分钟内接触角从最初的86°降低到75°,说明螺吡喃化合物受紫外光照后界面张力降低,亲水性增加,即极性增加。
螺噁嗪化合物
如图7所示,为螺噁嗪化合物的结构通式。其中,R1基团为CH2CH2OH;R2基团可以为-COOH或-OH基团,以保证紫外光照后受光照部分在显影单元被去除。
螺噁嗪化合物可以通过吲哚与亚硝基苯酚在无水乙醇中回流反应制备而成。以N-丁基-5'-羧基-5,7-二甲氧基螺苯并噁嗪为例,该螺噁嗪化合物的具体合成方法为,如图8所示,具体过程参见上述N-羟乙基-6-羟基螺吡喃,此处不再赘述。
上述螺噁嗪化合物在一定紫外光照(图中标记为hν)下的异构化过程如图9所示,螺碳-氧键发生异裂,开环形成电荷分离的反式离子结构,分子极性增加。
氮丙啶化合物
如图10所示,为氮丙啶化合物的结构。其中,R基团为C2H4OH,以保证紫外光照后受光照部分在显影单元被去除。
上述氮丙啶化合物在紫外光照(图中标记为hν)下的异构化过程如图11所示,螺碳-氧键发生异裂,开环形成电荷分离的反式离子结构,分子极性增加。
联吡啶化合物
如图12所示,为联吡啶化合物的结构通式。其中,R1基团包括氢、或者甲基、乙基、丙基、丁基等其它长链烷基中的任一种、或者醚链;R2基团包括羧甲基、羧乙基、羧丙基等其它长链羧基中的任一种;R3基团包括氢、或者甲基、乙基、丙基、丁基等其它长链烷基中的任一种、或者醚链;R4基团包括羧甲基、羧乙基、羧丙基等其它长链羧基中的任一种。
上述联吡啶化合物在紫外光照(图中标记为hν)及加热处理(图中标记为Heat)下的异构化过程如图13所示,螺碳-氧键发生异裂,开环形成电荷分离的反式离子结构,分子极性增加。
在上述基础上,该正性光刻胶组合物还包括溶剂和添加剂。
添加剂示例的可以包括,界面活性剂,用于改善胶体涂布特性,防止胶体出现放射线状涂布不均(Mura);增感剂,用于提高曝光感度。
溶剂使光刻胶处于液态,并且使光刻胶能够通过旋转的方法涂在晶圆表面形成一个薄层。
在上述正性光刻胶中的各组分配比优选如下,主体胶材占正性光刻胶组合物总重量的5%~30%;光敏剂占正性光刻胶组合物总重量的2%~5%;光致异构化合物占正性光刻胶组合物总重量的0.1%~2%;添加剂占正性光刻胶组合物总重量的0.1%~1%以及余量的溶剂,即溶剂占正性光刻胶组合物总重量的62%~92.8%。
各组分材料具体为,主体胶材可以为酚醛树脂,可通过酚化合物与醛化合物或酮化合物在酸性催化剂的存在下的反应制得;和/或,光敏剂为重氮萘醌型光敏剂,可通过重氮萘醌磺酰卤化合物与酚化合物在弱碱的存在下的反应制得;和/或,溶剂为N-甲基吡咯烷酮(N-methyl-2-pyrrolidone,NMP)、二甲基亚砜(Dimethyl sulfoxide,DMSO)、丙二醇单甲醚乙酸酯、乙酸乙氧乙酯以及二甲氧基乙醛中的任一种。
与上述正性光刻胶相对应的剥离液组分包括:质量分数约10%-30%的碱类,可以是MEA(Monobutanolamine,乙醇胺)、KOH(氢氧化钾)、NaOH(氢氧化钠)等;质量分数约50%-70%的醚类,可以是二乙二醇单丁醚(Butyldigol,BDG)。具体组分可沿用现有技术,本发明实施例对此不作限定。
实施例2
如图14所示,本发明实施例2提供了一种过孔的形成方法,该形成方法包括,
如图中(a)部分所示,在基板101上依次形成钝化层102和有机膜层103;有机膜层103上具有露出钝化层的区域(即有机膜过孔104)。
如图中(b)部分所示,采用例如涂布工艺,形成覆盖有机膜层103和钝化层102的光刻胶层105;该光刻胶层105由上述的正性光刻胶组合物构成,且有机膜层103与正性光刻胶组合物受光照前的极性相似;即该光刻胶层105在非极性或弱极性的有机膜层103上的附着力较强。
如图中(c)和(d)部分所示,采用构图工艺对光刻胶层105和露出的钝化层102进行处理,形成贯穿钝化层102的过孔106,覆盖在有机膜层103以及被有机膜层103露出的钝化层102上的光刻胶保留部分105a。
对光刻胶保留部分105a进行紫外光照射,以使正性光刻胶组合物中的光致异构化合物的结构转变为分子极性程度增加的离子结构,即降低光刻胶保留部分105a与相接触的有机膜层103之间的粘附力。
如图中(e)部分所示,通过剥离液去除光刻胶保留部分。
需要说明的是,在本发明实施例2中提供的上述过孔形成方法中,有机膜层103通常由光刻胶材料构成,通过掩模版直接对其进行曝光、显影即可形成相应的有机膜过孔104,故不存在光刻胶残留的问题。
上述的构图工艺是指应用一次掩模版,通过光刻胶曝光、显影、刻蚀以形成特定图案的工艺。上述采用构图工艺对光刻胶层105和露出的钝化层102进行处理,形成贯穿钝化层102的过孔106,覆盖在有机膜层103以及被有机膜层103露出的钝化层102上的光刻胶保留部分105a的具体过程可以为,采用掩模版对涂布的光刻胶层105进行曝光、显影,形成光刻胶保留部分105a和光刻胶去除区域;其中,光刻胶去除区域对应于钝化层102上待形成过孔的区域,采用等离子干法刻蚀对光刻胶去除区域露出的钝化层102进行刻蚀,形成贯穿钝化层的过孔106。
在对残留的光刻胶保留部分105a进行剥离前,增加一个紫外光照射单元,对整面基板进行光照处理,波长范围可以为330~380nm,光照强度可以为1~10mW/CM2,之后进行常规的光刻胶剥离,得到目标图案,即形成有钝化层过孔的基板。
实施例3
对于由非光刻胶材料构成的、需要经过刻蚀形成过孔图案的有机膜层,本发明实施例还提供了另一种过孔的形成方法,该形成方法包括,
在基板上依次形成有机膜层、光刻胶层;其中,光刻胶层由上述的正性光刻胶组合物构成;有机膜层与正性光刻胶组合物受光照前的极性相似。
采用构图工艺对光刻胶层和有机膜层进行处理,形成贯穿有机膜层的过孔和覆盖在有机膜层除过孔所在区域之外的光刻胶保留部分。
对光刻胶保留部分进行紫外光照射,以使正性光刻胶组合物中的光致异构化合物的结构转变为分子极性程度增加的离子结构。
通过剥离液去除光刻胶保留部分。
上述实施例3提供的另一种过孔的形成方法同样是在对残留的光刻胶保留部分进行剥离前,增加一个紫外光照射单元,对整面基板进行光照处理,波长范围可以为330~380nm,光照强度可以为1~10mW/CM2,之后进行常规的光刻胶剥离,得到目标图案,即形成有有机膜过孔的基板。
具体形成步骤可参见上述实施例2,本发明实施例对此不再赘述。
实施例4
本发明实施例还提供了一种显示基板,该显示基板上的过孔采用上述过孔的形成方法形成,该显示基板具体可以为阵列基板。
实施例5
本发明实施例还提供了一种显示装置,包括上述的显示基板。上述显示装置具体可以是LCD显示器、LCD电视、OLED显示器、OLED电视、数码相框、手机、平板电脑、数码相框、导航仪等具有任何显示功能的产品或者部件。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (9)
1.一种正性光刻胶组合物,所述正性光刻胶组合物包括,主体胶材、光敏剂;其特征在于,所述光刻胶组合物还包括,光致异构化合物;所述光致异构化合物受到紫外光照射后结构转变为分子极性程度增加的离子结构;
所述光致异构化合物包括螺吡喃化合物、氮丙啶化合物、联吡啶化合物中的至少一种;
所述氮丙啶化合物的结构通式为,
其中,所述R基团为C2H4OH;
所述螺吡喃化合物的结构式为,
其中,n为整数,且4≤n≤10;所述R基团包括羧基或羟基;
所述联吡啶化合物的结构通式为,
其中,所述R1基团包括氢、甲基、乙基、丙基、丁基、醚链中的任一种;所述R2基团包括羧甲基、羧乙基、羧丙基中的任一种;所述R3基团包括氢、甲基、乙基、丙基、丁基、醚链中的任一种;所述R4基团包括羧甲基、羧乙基、羧丙基中的任一种。
2.根据权利要求1所述的正性光刻胶组合物,其特征在于,所述正性光刻胶组合物还包括溶剂和添加剂;其中,
所述主体胶材占所述正性光刻胶组合物总重量的5%~30%;
所述光敏剂占所述正性光刻胶组合物总重量的2%~5%;
所述光致异构化合物占所述正性光刻胶组合物总重量的0.1%~2%;
所述添加剂占所述正性光刻胶组合物总重量的0.1%~1%;
所述溶剂占所述正性光刻胶组合物总重量的62%~92.8%。
3.根据权利要求2所述的正性光刻胶组合物,其特征在于,
所述主体胶材为酚醛树脂;
和/或,
所述光敏剂为重氮萘醌型光敏剂;
和/或,
所述溶剂为N-甲基吡咯烷酮、二甲基亚砜、丙二醇单甲醚乙酸酯、乙酸乙氧乙酯、二甲氧基乙醛中的任一种。
4.一种过孔的形成方法,其特征在于,所述形成方法包括,
在基板上依次形成钝化层和有机膜层;所述有机膜层上具有露出所述钝化层的区域;
形成覆盖所述有机膜层和所述钝化层的光刻胶层;所述光刻胶层由权利要求1至3任一项所述的正性光刻胶组合物构成,且所述有机膜层与所述正性光刻胶组合物受光照前的极性相似;
采用构图工艺对所述光刻胶层和露出的所述钝化层进行处理,形成贯穿钝化层的过孔,覆盖在所述有机膜层以及被所述有机膜层露出的所述钝化层上的光刻胶保留部分;
对所述光刻胶保留部分进行紫外光照射,以使所述正性光刻胶组合物中的光致异构化合物的结构转变为分子极性程度增加的离子结构;
通过剥离液去除所述光刻胶保留部分。
5.根据权利要求4所述的过孔的形成方法,其特征在于,
所述紫外光照射的波长范围为330~380nm,光照强度为1~10mW/CM2。
6.一种过孔的形成方法,其特征在于,所述形成方法包括,
在基板上依次形成有机膜层、光刻胶层;其中,所述光刻胶层由权利要求1至3任一项所述的正性光刻胶组合物构成;所述有机膜层与所述正性光刻胶组合物受光照前的极性相似;
采用构图工艺对所述光刻胶层和所述有机膜层进行处理,形成贯穿所述有机膜层的过孔和覆盖在所述有机膜层除所述过孔所在区域之外的光刻胶保留部分;
对所述光刻胶保留部分进行紫外光照射,以使所述正性光刻胶组合物中的光致异构化合物的结构转变为分子极性程度增加的离子结构;
通过剥离液去除所述光刻胶保留部分。
7.根据权利要求6所述的过孔的形成方法,其特征在于,
所述紫外光照射的波长范围为330~380nm,光照强度为1~10mW/CM2。
8.一种显示基板,其特征在于,所述显示基板上的过孔采用如权利要求4至5,或6至7任一项所述的过孔的形成方法形成。
9.一种显示装置,其特征在于,包括如权利要求8所示的显示基板。
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CN110161742B (zh) * | 2019-05-16 | 2020-11-24 | 深圳市华星光电技术有限公司 | 黑色矩阵及其制备方法、显示面板 |
KR102207247B1 (ko) * | 2020-01-03 | 2021-01-25 | 숭실대학교산학협력단 | 외부 및 내부 응력감응형 하이드로젤용 가교제 및, 이를 포함하여 형성된 외부 및 내부 응력감응형 하이드로젤 |
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