CN107342283B - Transient Voltage Suppressor and preparation method thereof - Google Patents
Transient Voltage Suppressor and preparation method thereof Download PDFInfo
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- CN107342283B CN107342283B CN201710564682.2A CN201710564682A CN107342283B CN 107342283 B CN107342283 B CN 107342283B CN 201710564682 A CN201710564682 A CN 201710564682A CN 107342283 B CN107342283 B CN 107342283B
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- 230000001052 transient effect Effects 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title abstract description 3
- 238000002955 isolation Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 238000000926 separation method Methods 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 10
- 230000002457 bidirectional effect Effects 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 19
- 239000011229 interlayer Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66098—Breakdown diodes
- H01L29/66106—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710564682.2A CN107342283B (en) | 2017-07-12 | 2017-07-12 | Transient Voltage Suppressor and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710564682.2A CN107342283B (en) | 2017-07-12 | 2017-07-12 | Transient Voltage Suppressor and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
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CN107342283A CN107342283A (en) | 2017-11-10 |
CN107342283B true CN107342283B (en) | 2019-08-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201710564682.2A Active CN107342283B (en) | 2017-07-12 | 2017-07-12 | Transient Voltage Suppressor and preparation method thereof |
Country Status (1)
Country | Link |
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CN (1) | CN107342283B (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6147853A (en) * | 1997-09-29 | 2000-11-14 | Stmicroelectronics S.A. | Protection circuit that can be associated with a filter |
CN1976028A (en) * | 2005-11-28 | 2007-06-06 | 株式会社东芝 | ESD protection element |
CN104241274A (en) * | 2014-08-30 | 2014-12-24 | 电子科技大学 | Both-way ESD protection device based on transverse PNP structure |
CN105261616A (en) * | 2015-09-22 | 2016-01-20 | 矽力杰半导体技术(杭州)有限公司 | Transient voltage suppressor and manufacturing method thereof |
CN105551989A (en) * | 2014-10-24 | 2016-05-04 | 格罗方德半导体公司 | Integrated circuits with test structures including bi-directional protection diodes |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105206680B (en) * | 2014-06-24 | 2018-09-11 | 比亚迪股份有限公司 | Bilateral transient voltage suppression diode and its manufacturing method |
-
2017
- 2017-07-12 CN CN201710564682.2A patent/CN107342283B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6147853A (en) * | 1997-09-29 | 2000-11-14 | Stmicroelectronics S.A. | Protection circuit that can be associated with a filter |
CN1976028A (en) * | 2005-11-28 | 2007-06-06 | 株式会社东芝 | ESD protection element |
CN104241274A (en) * | 2014-08-30 | 2014-12-24 | 电子科技大学 | Both-way ESD protection device based on transverse PNP structure |
CN105551989A (en) * | 2014-10-24 | 2016-05-04 | 格罗方德半导体公司 | Integrated circuits with test structures including bi-directional protection diodes |
CN105261616A (en) * | 2015-09-22 | 2016-01-20 | 矽力杰半导体技术(杭州)有限公司 | Transient voltage suppressor and manufacturing method thereof |
Also Published As
Publication number | Publication date |
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CN107342283A (en) | 2017-11-10 |
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Effective date of registration: 20190715 Address after: 312000 Cauchy Industrial Zone, Keqiao District, Zhejiang, Shaoxing Applicant after: Wall Huang, new material, Limited by Share Ltd Address before: 730030 Pingliang Road 679 602, Chengguan District, Lanzhou City, Gansu Province Applicant before: Che Chengkai |
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Effective date of registration: 20201105 Address after: No.102, 926 Changhong East Street, Fuxi street, Deqing County, Huzhou City, Zhejiang Province Patentee after: Zhejiang Hongjie Intelligent Technology Co., Ltd Address before: 312000 Cauchy Industrial Zone, Keqiao District, Zhejiang, Shaoxing Patentee before: WONDERFUL-WALL NEW MATERIALS Corp.,Ltd. |
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Effective date of registration: 20211125 Address after: No. S207, No. 44, Fuhua golden home, north of Wencheng Road, Zhongxing Town, Siyang County, Suqian City, Jiangsu Province, 223800 Patentee after: Jiangsu Shangjiang Construction Engineering Co.,Ltd. Address before: 313000 No.102, 926 Changhong East Street, Fuxi street, Deqing County, Huzhou City, Zhejiang Province Patentee before: Zhejiang Hongjie Intelligent Technology Co., Ltd |
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Effective date of registration: 20211221 Address after: 226499 No. 399, Changjiang Road, juegang Town, Rudong County, Nantong City, Jiangsu Province Patentee after: Jiangsu Dongli Construction Engineering Co.,Ltd. Address before: No. S207, No. 44, Fuhua golden home, north of Wencheng Road, Zhongxing Town, Siyang County, Suqian City, Jiangsu Province, 223800 Patentee before: Jiangsu Shangjiang Construction Engineering Co.,Ltd. |
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Effective date of registration: 20220207 Address after: No.1439, Wenchang Road, Lanting street, Keqiao District, Shaoxing City, Zhejiang Province, 312000 Patentee after: Shaoxing Xiuzhen New Energy Technology Co.,Ltd. Address before: 226499 No. 399, Changjiang Road, juegang Town, Rudong County, Nantong City, Jiangsu Province Patentee before: Jiangsu Dongli Construction Engineering Co.,Ltd. |
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