CN107342222A - A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip - Google Patents
A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip Download PDFInfo
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- CN107342222A CN107342222A CN201710631454.2A CN201710631454A CN107342222A CN 107342222 A CN107342222 A CN 107342222A CN 201710631454 A CN201710631454 A CN 201710631454A CN 107342222 A CN107342222 A CN 107342222A
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- graphite plate
- lead
- permutation
- weld tabs
- junction
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- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 98
- 239000010439 graphite Substances 0.000 claims abstract description 98
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 32
- 238000004140 cleaning Methods 0.000 claims description 19
- 239000004033 plastic Substances 0.000 claims description 19
- 229920003023 plastic Polymers 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000005245 sintering Methods 0.000 claims description 18
- 238000004806 packaging method and process Methods 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 7
- 230000008023 solidification Effects 0.000 claims description 7
- 239000004593 Epoxy Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 6
- 229910052745 lead Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000004575 stone Substances 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011810 insulating material Substances 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract description 2
- 238000002161 passivation Methods 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- 238000013461 design Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000003518 caustics Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Connection Of Batteries Or Terminals (AREA)
Abstract
A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip, step include：(1) permutation：GPP chip is subjected to permutation by vacuum permutation disk, makes the PN faces direction of GPP chip consistent, the circular weld tabs suitable with die size is subjected to permutation by vacuum permutation disk；(2) tool assembles：The tool includes the first graphite plate, the second graphite plate and the 3rd graphite plate; the first graphite plate of copper lead is placed with bottommost places its internal control; the present invention uses said structure; using thering is silicon insulating materials technology to be made with chip surface growth and use the chip on glass protection surface; its surface passivation technique effectively secures removable ion; the dielectric strength of glass is high; the hot properties of product is good; reverse leakage under its high temperature reduces an order of magnitude than original, and the low reliability of crash rate is high.
Description
Technical field：
The present invention relates to a kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip.
Background technology：
At present, the manufacture method of high-voltage diode is：Alloy welding → wire cutting chip → use bite chip platform
Face moulding → assembly welding → caustic corrosion → cleaning → coating PI glue → solidification → press mold → solidify afterwards → plating → test printing
Problems be present in the technological process of → visual inspection → packaging, the high-voltage diode manufactured in this way：1st, due to manufacturing
During used acid corrosion to add caustic corrosion, its etching extent is difficult to control, and chip and metal material together clean, and metal ion is stained with
Dirty serious, along with the contamination of tool, chip surface is difficult to clean up, caused by hot properties difference reliability it is low；2nd, due to
Welded using diffusion sheet alloy, it is difficult discharge to produce bubble, easily causes loose contact after dicing, and undercutting is produced in corrosion
Hole is formed, resistance to positive surge capacity is poor；3rd, tube core has the bossing of weld tabs after corrosion, easily produces edge, makes it
Resistance to reverse characteristic reduces, and reverse breakdown failure risk is high；4th, below 0.5A low current high-voltage diode, high current can only be produced
High-voltage diode need the high-voltage diode using low current is in parallel to realize, the forward voltage drop of branch is inconsistent, and it is shunted not
With the big operating temperature of the electric current too high reduction life-span for causing pressure drop low；5th, it is made and has used wire cutting, acid corrosion, caustic corrosion, painting
The flows such as glue, production cycle length, excessive fuel consumption sewage discharge, pollute environment.
The content of the invention：
The invention provides a kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip, reasonable in design, reliability
Height, resistance to positive surge capacity is strong, and reverse breakdown failure risk is low, and service life length, production process is environmentally safe, solves
Problems of the prior art.
The present invention is that technical scheme is used by solving above-mentioned technical problem：
A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip, step include：
(1) permutation：GPP chip is subjected to permutation by vacuum permutation disk, makes the PN faces direction of GPP chip consistent, will be with
The suitable circular weld tabs of die size carries out permutation by vacuum permutation disk；
(2) tool assembles：The tool includes the first graphite plate, the second graphite plate and the 3rd graphite plate, is put in bottommost
The first graphite plate that copper lead is placed with its internal control is put, the second graphite plate, the first graphite plate are placed on the first graphite plate
Endoporus it is relative with the interior hole site of the second graphite plate, weld tabs, weld tabs and the first graphite are put into the endoporus of the second graphite plate
Copper lead in disk is in contact, determined according to the pressure voltage of the diode of required manufacture needed for GPP chip number,
Interval is put into GPP chip and weld tabs in the endoporus of two graphite plates, and top is weld tabs, and the 3rd is placed at the top of the second graphite plate
Graphite plate, the endoporus of the 3rd graphite plate is relative with the interior hole site of the second graphite plate, and copper is placed in the endoporus of the 3rd graphite plate
Lead, copper lead are in contact with weld tabs；
(3) weld：Tool is put into tunneled sintering kiln and heated, nitrogen flow in tunneled sintering kiln：200-210L/
H, temperature are 320-360 DEG C, and the time is 10-12 minutes；
(4) it is stripped：Tool is taken out from tunneled sintering kiln, tool is disintegrated, the PN junction of welding fabrication is taken out and draws
Line；
(5) clean：The PN junction being welded and lead are transferred to cleaning disk, cleaned using acetone cleaning fluid, then
It is cleaned by ultrasonic；
(6) dry：The PN junction being welded after step (5) cleaning and the copper conductor of lead are dried under ultraviolet lamp box
Roasting 30-35 minutes, 80-85 DEG C of temperature；
(7) plastic packaging：The PN junction and lead of step (6) drying will be passed through, moulded using EME1100RG epoxy molding plastics
Envelope, mould temperature are 180-185 DEG C
(8) solidify：PN junction and lead by step (7) plastic packaging are put into hot setting, temperature is 170-175 DEG C, when
Between be 8 hours；
(9) electroplate：PN junction by step (8) solidification and lead are electroplated by barrel plating mode, coating is tin, plating
Thickness degree is 4-7um；
(10) pack：To PN junction and lead installation shell, hyperfrequency high-voltage diode is obtained.
The composition of weld tabs described in step (2) is 92.5%Pb 5%Sn 0.5Ag, and the thickness of weld tabs is 0.3mm.
The present invention use said structure, has silicon insulating materials technology to be made using being grown with chip surface and is protected with glass
The chip on surface is protected, its surface passivation technique effectively secures removable ion, and the dielectric strength of glass is high, the high temperature of product
Characteristic is good, and the reverse leakage under its high temperature reduces an order of magnitude than original, and the low reliability of crash rate is high；GPP chip
Welding procedure is superimposed, its chip area can be selected by size of current, and the big resistance to positive surge capacity of contact area is high；Use
The superposition welding of monolithic GPP chip, under tension in retraction after scolding tin material melts in welding, solder is not had down along asking
Topic, eliminates discharge short problem；GPP chip can be from 0.5A to 20A, and voltage can accomplish 3-100kV.Any superposition and choosing
Select, realize high current hyperfrequency product.Production, which is made, eliminates wire cutting, acid corrosion and caustic corrosion link, reduces production week
Phase, it is green to reduce blowdown.
Brief description of the drawings：
Fig. 1 is the structural representation of the tool in the step (2) of the present invention.
In figure, the 1, first graphite plate, the 2, second graphite plate, the 3, the 3rd graphite plate, 4, copper lead, 5, weld tabs, 6, GPP cores
Piece.
Embodiment：
For the technical characterstic for illustrating this programme can be understood, below by embodiment, and its accompanying drawing is combined, to this hair
It is bright to be described in detail.
Embodiment 1：
A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip, step include：
(1) permutation：GPP chip is subjected to permutation by vacuum permutation disk, makes the PN faces direction of GPP chip consistent, will be with
The suitable circular weld tabs of die size carries out permutation by vacuum permutation disk；
(2) tool assembles：The tool includes the first graphite plate 1, the second graphite plate 2 and the 3rd graphite plate 3, in bottommost
The first graphite plate 1 that copper lead is placed with its internal control is placed, the second graphite plate 2, the first stone are placed on the first graphite plate 1
The endoporus of disc 1 is relative with the interior hole site of the second graphite plate 2, is put into weld tabs 5 in the endoporus of the second graphite plate, weld tabs 5 with
Copper lead 4 in first graphite plate 1 is in contact, determined according to the pressure voltage of the diode of required manufacture needed for GPP chip 6
Number, if the voltage of one single chip is 1kV, to make 8kV high-voltage diode, design margin is generally 20%, that just according to
It is secondary to be put into 10 chips.Interval is put into GPP chip 6 and weld tabs 5 in the endoporus of the second graphite plate, and top is weld tabs 5, the
The 3rd graphite plate 3 is placed at the top of two graphite plates 2, and the endoporus of the 3rd graphite plate 3 is relative with the interior hole site of the second graphite plate 2,
Copper lead 4 is placed in the endoporus of the 3rd graphite plate 3, copper lead 4 is in contact with weld tabs 5；
(3) weld：Tool disk is put into tunneled sintering kiln and heated, nitrogen flow in tunneled sintering kiln：200L/H,
Temperature is 320 DEG C, and the time is 10 minutes；
(4) it is stripped：Tool is taken out from tunneled sintering kiln, tool is disintegrated, the PN junction of welding fabrication is taken out and draws
Line；
(5) clean：The PN junction being welded and lead are transferred to cleaning disk, cleaned using acetone cleaning fluid, then
It is cleaned by ultrasonic；
(6) dry：The PN junction being welded after step (5) cleaning and the copper conductor of lead are dried under ultraviolet lamp box
It is roasting 30 minutes, 80 DEG C of temperature；
(7) plastic packaging：The PN junction and lead of step (6) drying will be passed through, moulded using EME1100RG epoxy molding plastics
Envelope, mould temperature are 180 DEG C
(8) solidify：PN junction and lead by step (7) plastic packaging are put into hot setting, temperature is 170 DEG C, the time 8
Hour；
(9) electroplate：PN junction by step (8) solidification and lead are electroplated by barrel plating mode, coating is tin, plating
Thickness degree is 4um；
(10) pack：To PN junction and lead installation shell, hyperfrequency high-voltage diode is obtained.
The composition of weld tabs described in step (2) is 92.5%Pb 5%Sn 0.5Ag, and the thickness of weld tabs is 0.3mm.
Embodiment 2：
A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip, step include：
(1) permutation：GPP chip is subjected to permutation by vacuum permutation disk, makes the PN faces direction of GPP chip consistent, will be with
The suitable circular weld tabs of die size carries out permutation by vacuum permutation disk；
(2) tool assembles：The tool includes the first graphite plate 1, the second graphite plate 2 and the 3rd graphite plate 3, in bottommost
The first graphite plate 1 that copper lead is placed with its internal control is placed, the second graphite plate 2, the first stone are placed on the first graphite plate 1
The endoporus of disc 1 is relative with the interior hole site of the second graphite plate 2, is put into weld tabs 5 in the endoporus of the second graphite plate, weld tabs 5 with
Copper lead 4 in first graphite plate 1 is in contact, determined according to the pressure voltage of the diode of required manufacture needed for GPP chip 6
Number, if the voltage of one single chip is 1kV, to make 8kV high-voltage diode, design margin is generally 20%, that just according to
It is secondary to be put into 10 chips.Interval is put into GPP chip 6 and weld tabs 5 in the endoporus of the second graphite plate, and top is weld tabs 5, the
The 3rd graphite plate 3 is placed at the top of two graphite plates 2, and the endoporus of the 3rd graphite plate 3 is relative with the interior hole site of the second graphite plate 2,
Copper lead 4 is placed in the endoporus of the 3rd graphite plate 3, copper lead 4 is in contact with weld tabs 5；
(3) weld：Tool is put into tunneled sintering kiln and heated, nitrogen flow in tunneled sintering kiln：210L/H, temperature
Spend for 360 DEG C, the time is 12 minutes；
(4) it is stripped：Tool is taken out from tunneled sintering kiln, tool is disintegrated, the PN junction of welding fabrication is taken out and draws
Line；
(5) clean：The PN junction being welded and lead are transferred to cleaning disk, cleaned using acetone cleaning fluid, then
It is cleaned by ultrasonic；
(6) dry：The PN junction being welded after step (5) cleaning and the copper conductor of lead are dried under ultraviolet lamp box
It is roasting 35 minutes, 85 DEG C of temperature；
(7) plastic packaging：The PN junction and lead of step (6) drying will be passed through, moulded using EME1100RG epoxy molding plastics
Envelope, mould temperature are 185 DEG C
(8) solidify：PN junction and lead by step (7) plastic packaging are put into hot setting, temperature is 175 DEG C, the time 8
Hour；
(9) electroplate：PN junction by step (8) solidification and lead are electroplated by barrel plating mode, coating is tin, plating
Thickness degree is 7um；
(10) pack：To PN junction and lead installation shell, hyperfrequency high-voltage diode is obtained.
The composition of weld tabs described in step (2) is 92.5%Pb 5%Sn 0.5Ag, and the thickness of weld tabs is 0.3mm.
Embodiment 3：
A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip, step include：
(1) permutation：GPP chip is subjected to permutation by vacuum permutation disk, makes the PN faces direction of GPP chip consistent, will be with
The suitable circular weld tabs of die size carries out permutation by vacuum permutation disk；
(2) tool assembles：The tool includes the first graphite plate 1, the second graphite plate 2 and the 3rd graphite plate 3, in bottommost
The first graphite plate 1 that copper lead is placed with its internal control is placed, the second graphite plate 2, the first stone are placed on the first graphite plate 1
The endoporus of disc 1 is relative with the interior hole site of the second graphite plate 2, is put into weld tabs 5 in the endoporus of the second graphite plate, weld tabs 5 with
Copper lead 4 in first graphite plate 1 is in contact, determined according to the pressure voltage of the diode of required manufacture needed for GPP chip 6
Number, if the voltage of one single chip is 1kV, to make 8kV high-voltage diode, design margin is generally 20%, that just according to
It is secondary to be put into 10 chips.Interval is put into GPP chip 6 and weld tabs 5 in the endoporus of the second graphite plate, and top is weld tabs 5, the
The 3rd graphite plate 3 is placed at the top of two graphite plates 2, and the endoporus of the 3rd graphite plate 3 is relative with the interior hole site of the second graphite plate 2,
Copper lead 4 is placed in the endoporus of the 3rd graphite plate 3, copper lead 4 is in contact with weld tabs 5；
(3) weld：Tool is put into tunneled sintering kiln and heated, nitrogen flow in tunneled sintering kiln：205L/H, temperature
Spend for 340 DEG C, the time is 11 minutes；
(4) it is stripped：Tool is taken out from tunneled sintering kiln, tool is disintegrated, the PN junction of welding fabrication is taken out and draws
Line；
(5) clean：The PN junction being welded and lead are transferred to cleaning disk, cleaned using acetone cleaning fluid, then
It is cleaned by ultrasonic；
(6) dry：The PN junction being welded after step (5) cleaning and the copper conductor of lead are dried under ultraviolet lamp box
It is roasting 32 minutes, 82 DEG C of temperature；
(7) plastic packaging：The PN junction and lead of step (6) drying will be passed through, moulded using EME1100RG epoxy molding plastics
Envelope, mould temperature are 182 DEG C
(8) solidify：PN junction and lead by step (7) plastic packaging are put into hot setting, temperature is 172 DEG C, the time 8
Hour；
(9) electroplate：PN junction by step (8) solidification and lead are electroplated by barrel plating mode, coating is tin, plating
Thickness degree is 5um；
(10) pack：To PN junction and lead installation shell, hyperfrequency high-voltage diode is obtained.
The composition of weld tabs described in step (2) is 92.5%Pb 5%Sn 0.5Ag, and the thickness of weld tabs is 0.3mm.
Embodiment 4：
A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip, step include：
(1) permutation：GPP chip is subjected to permutation by vacuum permutation disk, makes the PN faces direction of GPP chip consistent, will be with
The suitable circular weld tabs of die size carries out permutation by vacuum permutation disk；
(2) tool assembles：The tool includes the first graphite plate 1, the second graphite plate 2 and the 3rd graphite plate 3, in bottommost
The first graphite plate 1 that copper lead is placed with its internal control is placed, the second graphite plate 2, the first stone are placed on the first graphite plate 1
The endoporus of disc 1 is relative with the interior hole site of the second graphite plate 2, is put into weld tabs 5 in the endoporus of the second graphite plate, weld tabs 5 with
Copper lead 4 in first graphite plate 1 is in contact, determined according to the pressure voltage of the diode of required manufacture needed for GPP chip 6
Number, if the voltage of one single chip is 1kV, to make 8kV high-voltage diode, design margin is generally 20%, that just according to
It is secondary to be put into 10 chips.Interval is put into GPP chip 6 and weld tabs 5 in the endoporus of the second graphite plate, and top is weld tabs 5, the
The 3rd graphite plate 3 is placed at the top of two graphite plates 2, and the endoporus of the 3rd graphite plate 3 is relative with the interior hole site of the second graphite plate 2,
Copper lead 4 is placed in the endoporus of the 3rd graphite plate 3, copper lead 4 is in contact with weld tabs 5；
(3) weld：Tool is put into tunneled sintering kiln and heated, nitrogen flow in tunneled sintering kiln：206L/H, temperature
Spend for 350 DEG C, the time is 11 minutes；
(4) it is stripped：Tool is taken out from tunneled sintering kiln, tool is disintegrated, the PN junction of welding fabrication is taken out and draws
Line；
(5) clean：The PN junction being welded and lead are transferred to cleaning disk, cleaned using acetone cleaning fluid, then
It is cleaned by ultrasonic；
(6) dry：The PN junction being welded after step (5) cleaning and the copper conductor of lead are dried under ultraviolet lamp box
It is roasting 33 minutes, 83 DEG C of temperature；
(7) plastic packaging：The PN junction and lead of step (6) drying will be passed through, moulded using EME1100RG epoxy molding plastics
Envelope, mould temperature are 183 DEG C
(8) solidify：PN junction and lead by step (7) plastic packaging are put into hot setting, temperature is 173 DEG C, the time 8
Hour；
(9) electroplate：PN junction by step (8) solidification and lead are electroplated by barrel plating mode, coating is tin, plating
Thickness degree is 6um；
(10) pack：To PN junction and lead installation shell, hyperfrequency high-voltage diode is obtained.
The composition of weld tabs described in step (2) is 92.5%Pb 5%Sn 0.5Ag, and the thickness of weld tabs is 0.3mm.
Experiment：
1st, the hyperfrequency high-voltage diode hot properties manufactured using the method for the present invention is good, with 500mA 8kV specifications
It is as shown in the table by the high temperature leakage testses result of high-voltage diode test machine row exemplified by product：
| Parameter | IRRM2(uA) |
| Test condition | VBR=VRRM Ta=100 DEG C |
| 1 | 0.25 |
| 2 | 0.22 |
| 3 | 0.26 |
| 4 | 0.33 |
| 5 | 0.27 |
| 6 | 0.42 |
| 7 | 0.32 |
| 8 | 0.35 |
| 9 | 0.31 |
| 10 | 0.38 |
High temperature electric leakage is less than 1uA, and the electric leakage of the test result of the product of other same specifications is in 5uA or so.
2nd, the hyperfrequency high-voltage diode working junction temperature manufactured using the method for the present invention is greatly improved, and is carried in working junction temperature
Height carries out high temperature reverse bias to 175 DEG C, by what instrument and tested 1000 hours, all qualified；And the product of other packaged types
It is all unqualified that high temperature reverse bias experiment is done at 175 DEG C.
Above-mentioned embodiment cannot function as limiting the scope of the invention, for the technology people of the art
For member, any alternate modification or conversion made to embodiment of the present invention are all fallen within protection scope of the present invention.
Part is not described in detail by the present invention, is the known technology of those skilled in the art of the present technique.
Claims (2)
- A kind of 1. method that hyperfrequency high-voltage diode is manufactured with GPP chip, it is characterised in that：Step includes：(1) permutation：GPP chip is subjected to permutation by vacuum permutation disk, makes the PN faces direction of GPP chip consistent, will be with chip Sizable circular weld tabs carries out permutation by vacuum permutation disk；(2) tool assembles：The tool includes the first graphite plate, the second graphite plate and the 3rd graphite plate, and one is placed in bottommost The first graphite plate of copper lead is placed with its internal control, places the second graphite plate on the first graphite plate, the first graphite plate it is interior Hole is relative with the interior hole site of the second graphite plate, is put into weld tabs in the endoporus of the second graphite plate, in weld tabs and the first graphite plate Copper lead be in contact, determined according to the pressure voltage of the diode of required manufacture needed for GPP chip number, in the second stone Interval is put into GPP chip and weld tabs in the endoporus of disc, and top is weld tabs, and the 3rd graphite is placed at the top of the second graphite plate Disk, the endoporus of the 3rd graphite plate is relative with the interior hole site of the second graphite plate, and copper lead is placed in the endoporus of the 3rd graphite plate, Copper lead is in contact with weld tabs；(3) weld：Tool is put into tunneled sintering kiln and heated, nitrogen flow in tunneled sintering kiln：200-210L/H, temperature Spend for 320-360 DEG C, the time is 10-12 minutes；(4) it is stripped：Tool is taken out from tunneled sintering kiln, tool is disintegrated, takes out the PN junction and lead of welding fabrication；(5) clean：The PN junction being welded and lead are transferred to cleaning disk, cleaned using acetone cleaning fluid, is then carried out It is cleaned by ultrasonic；(6) dry：The PN junction being welded after step (5) cleaning and the copper conductor of lead are toasted under ultraviolet lamp box 30-35 minutes, 80-85 DEG C of temperature；(7) plastic packaging：The PN junction and lead of step (6) drying will be passed through, plastic packaging, mould are carried out using EME1100RG epoxy molding plastics Temperature is 180-185 DEG C(8) solidify：PN junction and lead by step (7) plastic packaging are put into hot setting, temperature is 170-175 DEG C, the time 8 Hour；(9) electroplate：PN junction by step (8) solidification and lead are electroplated by barrel plating mode, coating is tin, plates thickness Spend for 4-7um；(10) pack：To PN junction and lead installation shell, hyperfrequency high-voltage diode is obtained.
- A kind of 2. method that hyperfrequency high-voltage diode is manufactured with GPP chip according to claim 1, it is characterised in that： The composition of weld tabs described in step (2) is 92.5%Pb 5%Sn 0.5Ag, and the thickness of weld tabs is 0.3mm.
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| CN201710631454.2A CN107342222B (en) | 2017-07-28 | 2017-07-28 | Method for manufacturing ultrahigh frequency high voltage diode by using GPP chip |
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| CN113471087A (en) * | 2021-06-25 | 2021-10-01 | 日照鲁光电子科技有限公司 | Process method for welding chips of laminated product in one step |
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| CN107342222B (en) | 2020-01-21 |
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