CN106843607A - A kind of capacitance touch screen of OnCell of high transmittance and preparation method thereof - Google Patents
A kind of capacitance touch screen of OnCell of high transmittance and preparation method thereof Download PDFInfo
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- CN106843607A CN106843607A CN201611004572.2A CN201611004572A CN106843607A CN 106843607 A CN106843607 A CN 106843607A CN 201611004572 A CN201611004572 A CN 201611004572A CN 106843607 A CN106843607 A CN 106843607A
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- Prior art keywords
- film layer
- oncell
- touch screen
- capacitance touch
- layer
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- 238000002834 transmittance Methods 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 46
- 239000011521 glass Substances 0.000 claims description 27
- 239000002346 layers by function Substances 0.000 claims description 5
- 239000011247 coating layer Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- HGWOWDFNMKCVLG-UHFFFAOYSA-N [O--].[O--].[Ti+4].[Ti+4] Chemical compound [O--].[O--].[Ti+4].[Ti+4] HGWOWDFNMKCVLG-UHFFFAOYSA-N 0.000 claims description 2
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000005357 flat glass Substances 0.000 description 6
- 230000004075 alteration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- -1 purity is 99.999% Chemical compound 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Position Input By Displaying (AREA)
Abstract
The present invention discloses a kind of capacitance touch screen of the OnCell of high transmittance, and successively including TFT substrate, titanium oxide film layer, silica coating and ITO transparent conductive film layer, the thickness of described ITO transparent conductive film layer is 1000 ~ 2000 Ethylmercurichlorendimides.The present invention by increase titanium oxide film layer and silica coating so that mobile phone screen reach one it is black attractive in appearance while, improve the transmitance of display screen form.
Description
Technical field
The present invention relates to capacitance plate field, more particularly, to a kind of capacitance touch screen of the OnCell of high transmittance.
Background technology
With the high speed development of smart mobile phone industry in recent years, touch screen technology also turns into numerous users and developer pays close attention to
Hot technology, in numerous touch technologies, G+G, OGS, In-cell etc. have its weak point.And On cell due to
Its processing procedure is simple, low cost, and yield is high the advantages of wait, and the new dominant technology side of touch-control industry has been increasingly becomed in the past two years
To.
At present, at home and abroad, the development level in terms of oncell touch-controls has been carried out scale amount also in several families
Produce, most industry major companies are laid out the development phase.The selection for being primarily limited to the numerous touch-screen sensor technologies of early stage is asked
Topic, display screen producer combines touch-screen producer and promotes this product technology route jointly together.
The G+G structures of conventional touch screen patch is made up of two sheet glass (sheet glass as touch sensor, one
Sheet glass is as windows be protected cover-plate glass) which increase the thickness and weight of touch-screen.
OGS is directly touch sensor to be directly made in windows be protected cover-plate glass.But processing procedure complex procedures cause yield
The relatively single cover-plate glass of intensity not high and glass declines.
In-cell is that touch sensor is directly integrated into TFT liquid crystal display glass the inside.Complex process causes yield
It is low, high cost.
Existing Oncell uses thinning with TFT liquid crystal display glass (including array face glass and CF glass) patch box
CF glass backs manufacture touch function after good.Play dual parts of liquid crystal display and touch sensor simultaneously.The structure is
TFT-CF/ITO, low cost and other advantages simple with processing procedure.But because substrate is that TFT pastes box glass, it is necessary to which normal temperature or low temperature are plated
Ito film.Cause resistivity higher, it is necessary to which the thicker ito film layer of plating can be only achieved the sensitive function of driving.And ITO plates thickness band
Two problems are carried out：First, the transmitance of whole display screen is relatively low.Second, display screen has the visible area of ITO and the BM sides of surrounding
The aberration of frame is excessive, causes the outward appearance of whole screen unsightly.
The content of the invention
Transmitance is improved it is an object of the invention to provide one kind, improving display screen has the visible area of ITO and the BM of surrounding
The aberration of frame.
Present invention firstly provides a kind of capacitance touch screen of the OnCell of high transmittance, successively including TFT substrate, titanium dioxide
Titanium film layer, silica coating and ITO transparent conductive film layer, the thickness of described ITO transparent conductive film layer is 1000 ~ 2000 angstroms
Rice.
Described titanium oxide film layer thickness is 100 ~ 300 Ethylmercurichlorendimides.
Described silica coating thickness is 200 ~ 300 Ethylmercurichlorendimides.
After capacitance touch screen is fitted with windows be protected cover plate, the color of visible area and rim area all tends to black.
Described TO is 15 ~ 60 ohm/mouthful through the resistance value of conductive film layer.
A kind of preparation method of the capacitance touch screen of the OnCell of above-mentioned high transmittance is further provided, to TFT bases
The CF glass backs of plate carry out functional layer plated film processing, and one layer of TiO is plated successively2Film layer, TiO2One layer of SiO is plated in film layer again2Film
Layer, SiO2One layer of ITO nesa coating layer is plated in film layer again.
Existing Oncell uses the CF glass backs manufacture after being got well so that TFT liquid crystal display glass patch box is thinning to touch work(
Energy.The structure is TFT-CF/ITO, simple with processing procedure, low cost and other advantages.But because substrate is that TFT pastes box glass, it is necessary to
Normal temperature or low temperature plating ito film.Cause resistivity higher, it is necessary to which the thicker ito film layer of plating can be only achieved the sensitive function of driving.This
Sample can cause the transmitance of whole display screen relatively low, about 78-83%, and increase work(under ito film by technology of the invention
Ergosphere, reaches an effect for anti-reflection anti-reflection so that the light transmittance of glass whole surface rises to more than 86%.It is simultaneously
Reduction resistance value, thickeies ito film is thick, can make the display screen have the aberration of the visible area of ITO and the BM frames of surrounding excessive, leads
Cause the outward appearance of whole screen unsightly, it is impossible to meet requirement of the middle and high end mobile phone to screen appearance.Increase dioxy by glass
Change titanium film layer and silica coating, it is possible on the premise of ensureing and improving existing capability, be allowed to and windows be protected cover plate
After patch box, the color of visible area and rim area tends to close, reaches the black aesthetic of whole mobile phone screen one.
Compared with prior art, the invention has the advantages that：
1. functional layer is increased under ito film by technology of the invention, reach an effect for anti-reflection anti-reflection so that glass is whole
The light transmittance on individual surface rises to more than 86%.
2. simultaneously because in order to reduce resistance value, the thick thickening of ito film, display screen can be made to have the visible area and surrounding of ITO
BM frames aberration it is excessive, cause the outward appearance of whole screen unsightly, it is impossible to meet middle and high end mobile phone and screen appearance is wanted
Ask.Increase titanium oxide film layer and silica coating by glass, it is possible to ensureing and improving the premise of existing capability
Under, it is allowed to after windows be protected cover plate patch box, the color of visible area and rim area tends to close, reaches whole mobile phone screen integrally
Black aesthetic.
3. the present invention suitable for Oncell classes capacitance touch screen design, its in design with manufacturing cost with it is existing
Technology is compared, and can preferably reach cell phone appearance effect attractive in appearance, meets requirement of the middle and high end mobile phone to screen；In glass
Upper increase functional layer, can improve the light transmittance of product, improve the display effect of product.
Specific embodiment
Presently preferred embodiments of the present invention is described in detail below, so that advantages and features of the invention are more easy to by this area skill
Art personnel understand, so as to make apparent defining to protection scope of the present invention.
A kind of high transmittance OnCell capacitance touch screens, be with TFT liquid crystal display glass (including array face glass and
CF glass) patch box it is thinning it is good after CF glass backs manufacture touch function.The double of liquid crystal display and touch sensor are played simultaneously
Recast is used.It includes TFT substrate, stacks gradually titanium oxide film layer, silica coating, ITO transparent conduction in TFT substrate
Film layer.
Its preparation technology flow is as follows：
S1, will paste box it is thinning it is good after TFT liquid crystal display glass base-plate cleanings it is clean；Using without round brush technique.
S2, the glass substrate that will be cleaned up are sent into the vacuum cavity of coating wire in substrate frame；
S3, the CF glass backs to TFT glass substrates carry out functional layer plated film processing, and one layer of TiO2 film layer, TiO2 films are plated successively
Plated again on layer and plate one layer of ITO nesa coating layer in one layer of Sio2 film layer, Sio2 film layers again.
Wherein TiO2 thickness is 200 Ethylmercurichlorendimides；Sio2Thickness is 500 Ethylmercurichlorendimides；ITO thickness is 1500 Ethylmercurichlorendimides；Using normal temperature or
Low temperature coating process.
S4 and then the taking-up from coating machine, clean again;
The formation of S5, ITO pattern：TFT glass substrates make to form one layer in the top of glass substrate after having plated trilamellar membrane
Ito film layer transparent and in uniform thickness, its thickness is 1500 Ethylmercurichlorendimides；
Then ito film layer surface is coated with the uniform positivity photoresist of a layer thickness, and light blockage coating thickness is 1 μm ~ 2 μm；
Pre-baked by photoresistance, exposure, development, etching takes off photoresistance film, and it is 1500 Ethylmercurichlorendimides and regular ITO pattern to ultimately form thickness
Or electrode.
TiO in above scheme2Film layer is prepared from by the way of MF reactive magnetron sputtering, and working vacuum degree is
0.3-0.5Pa, working gas is high-purity argon gas, and purity is 99.999%, argon gas 100-200sccm, medium frequency reactive sputtering it is anti-
Answer gas for high purity oxygen gas, purity is 99.999%, oxygen accounting example 20-30%, target power output is in 10KW-20KW, target voltage
350V --- 550V, 25-50 ° of coating temperature.Thicknesses of layers is between 10nm-30nm.
SiO in above kind scheme2Film is prepared from by the way of MF reactive magnetron sputtering, and working vacuum degree is
0.3-0.5Pa, working gas is high-purity argon gas, purity 99.999%, argon gas 200-300sccm, the reaction of medium frequency reactive sputtering
Gas is high purity oxygen gas, and purity is 99.999%, oxygen accounting example 30-40%, and target power output is in 5KW-10KW, target voltage
350V --- 450V, coating temperature is 25-50 °.Thicknesses of layers is between 20nm-80nm.
ITO conducting films in above kind scheme are prepared from by the way of DC stacked radio-frequency sputtering, ITO target material
It is made up of In2O3 and SnO2, its mass ratio is 85 ~ 95：5~15.Working vacuum degree is 0.3-0.5Pa, and working gas is high-purity argon
Gas, purity is 99.999%, argon gas 250-350sccm, and reacting gas is high-purity argon oxygen gas mixture, and purity is 99.999%,
In 5KW-10KW, target voltage 100V -200V, coating temperature is 25-50 ° to oxygen accounting example 1-2% target power outputs.Thicknesses of layers
Between 100nm-200nm.Film layer resistance is between 15-60 Ω.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to assert
Specific implementation of the invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should be all considered as belonging to of the invention
Protection domain.
Claims (6)
1. a kind of capacitance touch screen of the OnCell of high transmittance, it is characterised in that successively including TFT substrate, titanium dioxide film
Layer, silica coating and ITO transparent conductive film layer, the thickness of described ITO transparent conductive film layer is 1000 ~ 2000 Ethylmercurichlorendimides.
2. the capacitance touch screen of the OnCell of high transmittance according to claim 1, it is characterised in that described titanium dioxide
Titanium thicknesses of layers is 100 ~ 300 Ethylmercurichlorendimides.
3. the capacitance touch screen of the OnCell of high transmittance according to claim 1, it is characterised in that described titanium dioxide
Silicon film thickness is 200 ~ 800 Ethylmercurichlorendimides.
4. the capacitance touch screen of the OnCell of high transmittance according to claim 1, it is characterised in that work as capacitance touch screen
After being fitted with windows be protected cover plate, the color of visible area and rim area all tends to black.
5. the capacitance touch screen of the OnCell of high transmittance according to claim 1, it is characterised in that described ITO is saturating
The resistance value for crossing conductive film layer is 15 ~ 60 ohm/mouthful.
6. the preparation method of the capacitance touch screen of the OnCell of the high transmittance described in a kind of claim 1, it is characterised in that right
The CF glass backs of TFT substrate carry out functional layer plated film processing, and one layer of TiO is plated successively2Film layer, TiO2One layer is plated in film layer again
SiO2Film layer, SiO2One layer of ITO nesa coating layer is plated in film layer again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611004572.2A CN106843607A (en) | 2016-11-15 | 2016-11-15 | A kind of capacitance touch screen of OnCell of high transmittance and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611004572.2A CN106843607A (en) | 2016-11-15 | 2016-11-15 | A kind of capacitance touch screen of OnCell of high transmittance and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106843607A true CN106843607A (en) | 2017-06-13 |
Family
ID=59146263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611004572.2A Pending CN106843607A (en) | 2016-11-15 | 2016-11-15 | A kind of capacitance touch screen of OnCell of high transmittance and preparation method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN106843607A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102779570A (en) * | 2012-06-25 | 2012-11-14 | 普发玻璃（深圳）有限公司 | Shadow-eliminating and anti-reflection electric conduction film coating layer |
| US20130087374A1 (en) * | 2010-06-22 | 2013-04-11 | Lg Innotek Co., Ltd. | Conductive film with high transmittance having a number of anti reflection coatings, touch panel using the same and manufacturing method thereof |
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| CN103572202A (en) * | 2012-07-30 | 2014-02-12 | 海洋王照明科技股份有限公司 | Transparent conducting film and preparation method thereof |
| CN104035244A (en) * | 2014-06-24 | 2014-09-10 | 成都天马微电子有限公司 | Liquid-crystal display panel and manufacturing method thereof |
| WO2015000381A1 (en) * | 2013-07-05 | 2015-01-08 | 华为终端有限公司 | Display device, touch screen, and manufacturing method therefor |
| CN205563516U (en) * | 2016-03-14 | 2016-09-07 | 东莞劲胜精密组件股份有限公司 | Electron touch screen |
-
2016
- 2016-11-15 CN CN201611004572.2A patent/CN106843607A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130087374A1 (en) * | 2010-06-22 | 2013-04-11 | Lg Innotek Co., Ltd. | Conductive film with high transmittance having a number of anti reflection coatings, touch panel using the same and manufacturing method thereof |
| CN102779570A (en) * | 2012-06-25 | 2012-11-14 | 普发玻璃（深圳）有限公司 | Shadow-eliminating and anti-reflection electric conduction film coating layer |
| CN103572202A (en) * | 2012-07-30 | 2014-02-12 | 海洋王照明科技股份有限公司 | Transparent conducting film and preparation method thereof |
| WO2015000381A1 (en) * | 2013-07-05 | 2015-01-08 | 华为终端有限公司 | Display device, touch screen, and manufacturing method therefor |
| CN103488369A (en) * | 2013-09-17 | 2014-01-01 | 芜湖长信科技股份有限公司 | Touch screen without chromatic aberration and method for manufacturing touch screen |
| CN104035244A (en) * | 2014-06-24 | 2014-09-10 | 成都天马微电子有限公司 | Liquid-crystal display panel and manufacturing method thereof |
| CN205563516U (en) * | 2016-03-14 | 2016-09-07 | 东莞劲胜精密组件股份有限公司 | Electron touch screen |
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Application publication date: 20170613 |
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