CN106684196A - 一种单i型聚光光伏电池芯片 - Google Patents
一种单i型聚光光伏电池芯片 Download PDFInfo
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- CN106684196A CN106684196A CN201710125622.0A CN201710125622A CN106684196A CN 106684196 A CN106684196 A CN 106684196A CN 201710125622 A CN201710125622 A CN 201710125622A CN 106684196 A CN106684196 A CN 106684196A
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- 239000000463 material Substances 0.000 claims abstract description 14
- 230000005494 condensation Effects 0.000 claims description 40
- 238000009833 condensation Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010248 power generation Methods 0.000 abstract description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
本发明涉及一种单I型聚光光伏电池芯片,属太阳能光伏发电技术领域,包括负电极层,聚光光伏电池基材层,正电极层和有效面积,所述聚光光伏电池基材层一面覆上负电极层,另一面覆上正电极层,所述负电极层之外的部分为有效面积,该种电池芯片能极大地减少聚光光伏电池基材材料的用量,这样就能减少聚光光伏电池芯片的制作成本;同时宽度为0.5~1.5mm和厚度为0.2~1mm的负电极能够承受可达50安培的额定电流。
Description
技术领域
本发明涉及一种光伏发电部件,具体涉及一种单I型聚光光伏电池芯片,属太阳能光伏发电技术领域。
背景技术
通常,聚光光伏发电***所寻求的主要益处是在聚光光伏电池芯片的有效面积上得到从菲涅尔透镜汇聚的高密度太阳光。透镜的倍数越高,得到太阳光的密度越高,相同面积上使用的聚光光伏电池芯片越少,单位面积上的发电成本就越低。
目前通常从菲涅尔透镜汇聚过来的焦斑都为正方形,该焦斑的形状和大小也通常和聚光光伏电池芯片的形状和大小一致,从而使菲涅尔透镜汇聚过来的焦斑可以完全汇聚到聚光光伏电池芯片上。但是在实际应用中,聚光光伏电池芯片上的负电极层总是小于聚光光伏电池基材层,由于聚光光伏电池基材层上的基材材料相对很贵(一个平方厘米大小的基材材料大约在50元人民币左右),这样就极大浪费了聚光光伏电池基材层的基材材料。
发明内容
本发明的目的是提供一种单I型聚光光伏电池芯片,该电池芯片在于克服现有技术的不足。
为了实现上述技术目的,本发明采取的技术方案是:一种单I型聚光光伏电池芯片,其特征是,它包括负电极层,聚光光伏电池基材层,正电极层和有效面积,所述聚光光伏电池基材层一面覆上负电极层,另一面覆上正电极层,所述负电极层之外的部分为有效面积。
所述负电极层的宽度为0.5~1.5mm,厚度为0.2~1mm的平整I字形形状,负电极层和聚光光伏电池基材层其中一个端面完全重合。
所述聚光光伏电池基材层为GaInP(磷化铟嫁)/GaAs(砷化镓)/Ge(锗)三层组合体。
所述正电极层为一完全密封的平面,正电极层面积形状和聚光光伏电池基材层面积形状完全一样。
所述有效面积为正方形形状。
本发明的优点和积极效果是:1、该种电池芯片能极大地减少聚光光伏电池基材材料的用量,这样就能减少聚光光伏电池芯片的制作成本;2、宽度为0.5~1.5mm和厚度为0.2~1mm的负电极能够承受可达50安培的额定电流。
附图说明
图1为一种单I型聚光光伏电池芯片主视图。
图2为一种单I型聚光光伏电池芯片俯视图。
其中:1、负电极层,2、聚光光伏电池基材层,3、正电极层,4、有效面积。
具体实施方式
下面结合附图对本发明作进一步的说明。
一种单I型聚光光伏电池芯片,如图1~2所示,包括负电极层1,聚光光伏电池基材层2,正电极层3和有效面积4,所述聚光光伏电池基材层2一面覆上负电极层1,另一面覆上正电极层3,所述负电极层1之外的部分为有效面积4,所述负电极层的宽度为0.5~1.5mm,厚度为0.2~1mm的平整I字形形状,既能保证大电流很顺畅地通过正电极层3和负电极层1引导出来,也能保证各电极层和连接线能承受50安培的额定电流,同时还能保证很好地焊接或者绑定200um~1mm的导线,且导线线头不会进入到聚光光伏电池芯片的有效面积内,负电极层和聚光光伏电池基材层其中一个端面完全重合,这样就完全利用了聚光光伏电池基材层,从而达到节约聚光光伏电池基材层基材材料的目的。
本发明中,作为变行实施例,聚光光伏电池芯片的正、负电极层也可以交换过来设定制作,负电极层和聚光光伏电池基材层其中任意一个端面完全重合,故本发明的权利保护范围以权利要求书限定的范围为准。
Claims (5)
1.一种单I型聚光光伏电池芯片,其特征是,它包括负电极层,聚光光伏电池基材层,正电极层和有效面积,所述聚光光伏电池基材层一面覆上负电极层,另一面覆上正电极层,所述负电极层之外的部分为有效面积。
2.根据权利要求1所述的一种单I型聚光光伏电池芯片,其特征是,所述负电极层的宽度为0.5~1.5mm,厚度为0.2~1mm的平整I字形形状,负电极层和聚光光伏电池基材层其中一个端面完全重合。
3.根据权利要求1所述的一种单I型聚光光伏电池芯片,其特征是,所述聚光光伏电池基材层为GaInP(磷化铟嫁)/GaAs(砷化镓)/Ge(锗)三层组合体。
4.根据权利要求1所述的一种单I型聚光光伏电池芯片,其特征是,所述正电极层为一完全密封的平面,正电极层面积形状和聚光光伏电池基材层面积形状完全一样。
5.根据权利要求1所述的一种单I型聚光光伏电池芯片,其特征是,所述有效面积为正方形形状。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040099965A1 (en) * | 2001-06-16 | 2004-05-27 | Byung-Jun Park | Integrated circuits having self-aligned metal contact structures |
CN102881730A (zh) * | 2012-10-13 | 2013-01-16 | 成都聚合科技有限公司 | 一种高效率聚光光伏电池片 |
CN103997288A (zh) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | 一种聚光太阳能电池片 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040099965A1 (en) * | 2001-06-16 | 2004-05-27 | Byung-Jun Park | Integrated circuits having self-aligned metal contact structures |
CN102881730A (zh) * | 2012-10-13 | 2013-01-16 | 成都聚合科技有限公司 | 一种高效率聚光光伏电池片 |
CN103997288A (zh) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | 一种聚光太阳能电池片 |
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