CN106653613A - 一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法 - Google Patents
一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/247—Amorphous materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
本发明属于半导体及微电子器件领域,特别涉及一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法。包括如下步骤:称取可溶性的铟盐、钇盐,量取溶剂,配置铟钇氧前驱体溶液,将铟钇氧前驱体溶液涂覆到预先涂有介电层/栅极薄膜的衬底上形成铟钇氧前驱体薄膜,然后经过一定功率、时间和温度的光波退火,即得到铟钇氧透明半导体薄膜。随后沉积源漏电极,即得到铟钇氧薄膜晶体管。本发明所得铟钇氧薄膜晶体管性能高,在信息电子领域有重要应用前景。通过本发明的工艺可以避免通常的高温溶液工艺、工艺周期长或昂贵设备等,成本低,适合工业化大规模生产。
Description
技术领域
本发明属于半导体及微电子器件领域,特别涉及一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法,铟钇氧薄膜晶体管在信息电子等领域有重要应用前景。
背景技术
进入二十一世纪后,显示器件已经成为人们获取信息、进行信息交换的主要终端设备,薄膜晶体管(Thin Film Transistor)作为有源驱动技术的关键器件对显示设备的整体性能有着举足轻重的影响。到目前为止,发展最为成熟的是非晶硅薄膜晶体管及多晶硅薄膜晶体管。然而非晶硅晶体管的缺点是载流子迁移率低(<1cm2/Vs),难以满足有机发光二极管电流驱动的要求,同时 a-Si:H晶体管易受光照影响,使得工作稳定性较差;多晶硅晶体管生产工艺比较复杂,成本较高,同时受激光晶化工艺的限制,大尺寸化比较困难。经过多年研究,硅基晶体管的缺点难以得到改善,而以非晶态氧化物半导体作为沟道层的薄膜晶体管得到了快速发展,非晶态氧化物晶体管的优点在于:载流子迁移率较高,器件综合性能优异,制备工艺成熟,上述优点使其具有很大的应用价值。
2004 年,东京工业大学的 Hosono 小组在著名学术期刊《Nature》上发表了非晶铟镓锌氧薄膜晶体管。该铟镓锌氧晶体管的载流子迁移率为 10 cm2/Vs,开关电流比达到了 106。自此,以非晶铟镓锌氧为主的多元非晶态氧化物引起了科研人员的广泛关注。因此研究高性能的铟钇氧薄膜晶体管具有极其重要的意义。
目前制备氧化铟基薄膜晶体管的方法多种多样,主要包括气相法和液相法两大类。例如,磁控溅射、电子束蒸发、原子层沉积及化学气相沉积等方法都被用来制备氧化铟基薄膜。然而,这些气相方法通常需要真空环境,增加了设备的复杂,提高了成本。近年来,液相方法日益引起了广泛的关注,得到了迅速的发展,例如溶胶-凝胶法、喷雾热解法等。近年来发展的液相法合成氧化铟基薄膜的研究报道有许多。例如,公开号为CN103779425B的中国发明专利公开了一种铟镓锌氧化物半导体薄膜和铟镓锌薄膜晶体管的制备方法,包括a)制备乙酰丙酮镓的乙醇溶液、乙酰丙酮锌水合物的乙醇溶液和乙酰丙酮铟的四氢呋喃溶液;b)将三种溶液进行混合并搅拌均匀,制得铟镓锌氧化物的前驱体溶液;c)将前驱体溶液沉积在基板材料上并进行退火处理,制得铟镓锌氧化物半导体薄膜。由上述发明专利可以看出,虽然液相法可以制备较高性能的氧化铟基薄膜晶体管,但液相法通常需要高温(高于400℃)退火,才能促使前驱体薄膜分解并致密化,形成致密的氧化铟基薄膜。因此,寻找一种新的低温液相制备技术,对于铟钇氧薄膜晶体管在各种领域的大规模应用是极为重要和迫切的。
发明内容
本发明的目的在于提供一种高迁移率铟钇氧薄膜晶体管的低温液相制备方法,实现铟钇氧薄膜晶体管的简易高效制备,更易于大规模生产和应用。本发明的创新点主要在于:发展了新的低温光波方法液相制备高迁移率铟钇氧薄膜晶体管。
本发明的技术方案,具体包括以下步骤:
(1) 制备铟钇氧前驱体溶液:称取可溶性的铟盐及钇盐,量取溶剂,配置浓度为0.01-0.5摩尔/升的铟钇氧前驱体溶液,经过0.1-3小时的磁力搅拌和超声分散形成澄清透明的铟钇氧前驱体溶液;
(2) 制备铟钇氧薄膜:将铟钇氧前驱体溶液涂覆到预先涂有介电层/栅极薄膜的衬底上形成铟钇氧前驱体薄膜,进行50-150 ℃的预热处理,然后经过一定功率、时间和温度的光波退火,根据铟钇氧薄膜的厚度要求可多次涂覆前驱体铟钇氧溶液并退火处理,即得到铟钇氧透明半导体薄膜。
(3) 制备铟钇氧薄膜晶体管:在铟钇氧透明半导体薄膜上沉积源漏电极,即得到铟钇氧薄膜晶体管。
本发明所述制备方法的步骤(1)中,所述的可溶性的铟盐为硝酸铟、氯化铟、硫酸铟或乙酸铟中的一种或两种以上。
本发明所述制备方法的步骤(1)中,所述的可溶性的钇盐为硝酸钇、氯化钇、硫酸钇或乙酸钇中的一种或两种以上。
本发明所述制备方法的步骤(1)中,所述的溶剂为乙二醇甲醚、乙醇、水、乙二醇或二甲基甲酰胺中的一种或两种以上。
本发明所述制备方法的步骤(1)中,所述涂覆方法为旋转涂覆法、滴涂法、浸涂法、喷雾法或喷墨打印法。
本发明所述制备方法的步骤(1)中,所述介电层为氧化硅、氧化锆、氧化铪、氧化铝、氧化钇或氧化镧中的一种或两种以上。
本发明所述制备方法的步骤(1)中,所述的栅极薄膜为铝、铜、银、钼、氧化铟锡或金薄膜中的一种或两种以上。
本发明所述制备方法的步骤(1)中,所述的光波的生成仪器为用作厨具的光波炉或具有卤素灯管的加热仪器。
本发明所述制备方法的步骤(1)中,所述的光波退火的功率为100-900 W。
本发明所述制备方法的步骤(1)中,所述的光波退火的时间为5-120分钟。
本发明所述制备方法的步骤(1)中,所述的光波退火过程中的温度为100-300 ℃。
本发明所述制备方法的步骤(1)中,所述的源漏电极为铝、铜、银、钼、氧化铟锡或金薄膜中的一种或两种以上。
本发明的有益效果是:本发明工艺简单容易操作,原料廉价易得,所制备的铟钇氧透明半导体薄膜晶体管性能高,有望在信息电子等器件中得到应用。通过本发明的工艺可以避免通常的高温溶液工艺、工艺周期长或昂贵设备等,成本低,适合工业化大规模生产。
附图说明
下面结合附图对本发明作进一步的说明。
附图1为实施例之一的铟钇氧薄膜晶体管的器件结构图;
附图2是实施例之一的铟钇氧薄膜晶体管的的转移特性曲线。
具体实施方式
下面结合附图和具体实施例对本发明作进一步的说明。
实施例1:
称取1.106 g氯化铟,1.515 g氯化钇,量取10毫升水溶液,配置浓度为0.5摩尔/升的铟钇氧前驱体溶液,经过2小时的磁力搅拌和超声分散形成澄清透明的铟钇氧前驱体溶液。将铟钇氧前驱体溶液涂覆到预先涂有氧化硅的氧化铟锡玻璃上形成铟钇氧前驱体薄膜,进行100 ℃的预热处理,然后经过300W、60分钟和200 ℃的光波退火,即得到铟钇氧透明半导体薄膜。在铟钇氧透明半导体薄膜上沉积源漏电极,即得到铟钇氧薄膜晶体管。
实施例2:
称取0.032 g硝酸铟,0.03 g氯化钇,量取10毫升乙醇溶液,配置浓度为0.01摩尔/升的铟钇氧前驱体溶液,经过0.5小时的磁力搅拌和超声分散形成澄清透明的铟钇氧前驱体溶液。将铟钇氧前驱体溶液涂覆到预先涂有氧化钇的单晶硅衬底上形成铟钇氧前驱体薄膜,进行50 ℃的预热处理,然后经过700W、30分钟和280 ℃的光波退火,即得到铟钇氧透明半导体薄膜。在铟钇氧透明半导体薄膜上沉积源漏电极,即得到铟钇氧薄膜晶体管。
实施例3:
称取0.146 g乙酸铟,0.192 g硝酸钇,量取5毫升乙二醇溶液,配置浓度为0.1摩尔/升的铟钇氧前驱体溶液,经过1小时的磁力搅拌和超声分散形成澄清透明的铟钇氧前驱体溶液。将铟钇氧前驱体溶液涂覆到预先涂有氧化铝的单晶硅衬底上形成铟钇氧前驱体薄膜,进行90 ℃的预热处理,然后经过900W、5分钟和300 ℃的光波退火,即得到铟钇氧透明半导体薄膜。在铟钇氧透明半导体薄膜上沉积源漏电极,即得到铟钇氧薄膜晶体管。
实施例4:
称取0.221 g氯化铟,0.251 g乙酸钇,量取20毫升二甲基甲酰胺溶液,配置浓度为0.05摩尔/升的铟钇氧前驱体溶液,经过2小时的磁力搅拌和超声分散形成澄清透明的铟钇氧前驱体溶液。将铟钇氧前驱体溶液涂覆到预先涂有氧化镧的氧化铟锡玻璃上形成铟钇氧前驱体薄膜,进行120 ℃的预热处理,然后经过500W、20分钟和250 ℃的光波退火,即得到铟钇氧透明半导体薄膜。在铟钇氧透明半导体薄膜上沉积源漏电极,即得到铟钇氧薄膜晶体管。
实施例5:
称取2.4 g硝酸铟,1.883 g乙酸钇,量取15毫升乙二醇甲醚溶液,配置浓度为0.5摩尔/升的铟钇氧前驱体溶液,经过3小时的磁力搅拌和超声分散形成澄清透明的铟钇氧前驱体溶液。将铟钇氧前驱体溶液涂覆到预先涂有氧化钇的单晶硅衬底上形成铟钇氧前驱体薄膜,进行70 ℃的预热处理,然后经过100W、120分钟和150 ℃的光波退火,即得到铟钇氧透明半导体薄膜。在铟钇氧透明半导体薄膜上沉积源漏电极,即得到铟钇氧薄膜晶体管。
上述实施例结合附图对本发明的具体实施方式进行了描述,但并非对本发明保护范围的限制。所属领域技术人员应该明白,在本发明的技术方案的基础上,本领域技术人员不需要付出创造性劳动即可做出的对本发明的各种修改或变形,仍在本发明的保护范围以内。
Claims (11)
1.一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法,其特征在于包括如下步骤:
(1) 制备铟钇氧前驱体溶液:称取可溶性的铟盐及钇盐,量取溶剂,配置浓度为0.01-0.5摩尔/升的铟钇氧前驱体溶液,经过0.1-3小时的磁力搅拌和超声分散形成澄清透明的铟钇氧前驱体溶液;
(2) 制备铟钇氧薄膜:将铟钇氧前驱体溶液涂覆到预先涂有介电层/栅极薄膜的的衬底上形成铟钇氧前驱体薄膜,进行50-150 ℃的预热处理,然后经过一定功率、时间和温度的光波退火,根据铟钇氧薄膜的厚度要求可多次涂覆前驱体铟钇氧溶液并退火处理,得到铟钇氧透明半导体薄膜;
(3) 制备铟钇氧薄膜晶体管:在铟钇氧透明半导体薄膜上沉积源漏电极,即得到铟钇氧薄膜晶体管;
所述的光波的生成仪器为用作厨具的光波炉或具有卤素灯管的加热仪器。
2.根据权利要求1所述的一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法,其特征在于:所述的可溶性的铟盐为硝酸铟、氯化铟、硫酸铟或乙酸铟中的一种或两种以上。
3.根据权利要求1所述的一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法,其特征在于:所述的可溶性的钇盐为硝酸钇、氯化钇、硫酸钇或乙酸钇中的一种或两种以上。
4.根据权利要求1所述的一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法,其特征在于:所述的溶剂为乙二醇甲醚、乙醇、水、乙二醇或二甲基甲酰胺中的一种或两种以上。
5.根据权利要求1所述的一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法,其特征在于:所述涂覆方法为旋转涂覆法、滴涂法、浸涂法、喷雾法或喷墨打印法。
6.根据权利要求1所述的一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法,其特征在于:所述介电层为氧化硅、氧化锆、氧化铪、氧化铝、氧化钇或氧化镧中的一种或两种以上。
7.根据权利要求1所述的一种低温液相制备高迁移率铟锌氧薄膜晶体管的方法,其特征在于:所述的栅极薄膜为铝、铜、银、钼、氧化铟锡或金薄膜中的一种或两种以上。
8.根据权利要求1所述的一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法,其特征在于:所述的光波退火的功率为100-900 W。
9.根据权利要求1所述的一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法,其特征在于:所述的光波退火的时间为5-120分钟。
10.根据权利要求1所述的一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法,其特征在于:所述的光波退火过程中的温度为100-300 ℃。
11.根据权利要求1所述的一种低温液相制备高迁移率铟钇氧薄膜晶体管的方法,其特征在于:所述的源漏电极为铝、铜、银、氧化铟锡或金薄膜中的一种或两种以上。
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