CN106558624B - 一种快速恢复二极管及其制造方法 - Google Patents
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Abstract
本发明提供一种快速恢复二极管及其制造方法,所述二极管包括:具有三个具有间隔的P型硅区(3)的且表面有氧化层(2)的N型硅衬底(1),所述氧化层(2)上的多晶层(5),所述多晶层(5)上的阳极金属层和所述N型硅衬底(1)上与其相对的阴极金属层,所述P型硅区(3)具有深能级掺杂区(4);所述制造方法包括:1)初始氧化;2)形成有源区和分压环;3)形成PN结;4)多晶生长:5)寿命控制;6)多晶场板;7)形成阳极金属电极并表面钝化;8)形成Al/Ti/Ni/Ag或Ti/Ni/Ag阴极金属电极。本发明制造方法利用多晶实现激光退火终端保护,避免激光退火导致终端受损以致耐压失效。
Description
技术领域
本发明涉及一种电力半导体器件,具体涉及一种快速恢复二极管及其制造方法。
背景技术
随着电力电子技术的发展,各种变频电路和斩波电路的应用不断扩大,电力电子电路中的回路有的采用换流关断的晶闸管,有的采用具有自关断能力的新型电力电子器件,而这两种器件都需要一个与之并联的快速恢复二极管。早期的工艺条件要求尽可能引入少的复合中心进行半导体器件制造,但如此制造的器件开关速度慢,无法适应高频应用的需求。为了满足电力电子***对高频性能要求,无论是开关管,还是续流用的二极管,都需要用受控的方法将复合中心引入晶格,降低少子寿命,提高器件的开关速度。如果对器件有更高频的要求,则需在引入更多的复合中心的同时还需优化结构。
目前通常采用以下两种方式在器件中引入复合中心。第一种是对硅中呈现深能级的杂质进行热扩散:通常采用重金属金或铂,由于其扩散速度快,无法精确控制深度,因此为全局寿命控制方式。第二种是通过高能粒子轰击硅晶体,在晶体中产生空穴和间隙原子形式的晶格损伤:一般采用电子辐照、氢注入或氦注入;电子辐照通常为贯穿方式,即复合中心在器件中的分布是恒定的,因此仍旧为全局寿命控制;氢注入和氦注入可以通过控制注入能量实现限定深度注入,在最有效区域实现寿命控制,即通常说的局域寿命控制,局域寿命控制技术是高端器件常用的寿命控制方式。
采用激光退火实现深能级杂质限定深度分布,同样可以实现局域寿命控制,这是一个可以获得低漏电同时器件特性又好的一种折中方案。但激光退火在介质层表面近1500℃的高温,如此的高温会导致终端介质层出现无法预知的问题,严重的可能导致反向耐压失效。
发明内容
本发明的目的是提供一种快速恢复二极管及其制造方法,克服现有技术存在的不足,实现了金属局域寿命控制。
为了实现上述目的,本发明采用以下技术方案:
一种快速恢复二极管,所述二极管包括:具有三个具有间隔的P型硅区(3)的且表面有氧化层(2)的N型硅衬底(1),所述氧化层(2)上的多晶层(5),所述多晶层(5)上的阳极金属层和所述N型硅衬底(1)上与其相对的阴极金属层,所述P型硅区(3)具有深能级掺杂区(4)。
所述的快速恢复二极管的第一优选方案,所述氧化层(2)的厚度为
所述的快速恢复二极管的第二优选方案,所述多晶层(5)的材料为硅,厚度为
所述的快速恢复二极管的第三优选方案,所述深能级掺杂区(4)的掺杂杂质为金、铂或钯。
一种所述的快速恢复二极管的制造方法,该方法包括如下步骤:
1)初始氧化:清洗N型硅衬底,高温氧化所述衬底于表面生成氧化层;
2)形成有源区和分压环:通过涂胶、曝光、显影、刻蚀和去胶形成有源区和终端区窗口;
3)形成PN结:形成掩蔽层,注入硼,于1100~1300℃氮气下推结5~25um;
4)多晶生长:淀积多晶层,掺杂磷杂质:
5)寿命控制:光刻,刻蚀多晶,暴露有源区窗口,注入或溅射深能级杂质,并激光退火进行推结;
6)多晶场板:再次光刻,刻蚀多晶,实现终端场板结构;
7)阳极金属电极:蒸发或者溅射Al,通过光刻,刻蚀,去胶,合金,形成表面金属淀积,进行表面钝化;
8)阴极金属电极:形成Al/Ti/Ni/Ag或Ti/Ni/Ag背面金属电极。
所述的快速恢复二极管的制造方法的第一优选技术方案,步骤3)所述掩蔽层的厚度为
所述的快速恢复二极管的制造方法的第二优选技术方案,步骤3)所述硼的注入剂量为1e13~1e15。
所述的快速恢复二极管的制造方法的第三优选技术方案,步骤3)所述推结的温度为1200℃。
所述的快速恢复二极管的制造方法的第四优选技术方案,步骤4)所述多晶的掺杂源为POCl3或磷。
与最接近的现有技术比,本发明具有如下有益效果:
1)本发明方法利用多晶实现激光退火终端保护,可避免激光退火工艺导致终端受损以致耐压失效,本方法同样适用于其它需要局域寿命控制的功率器件;
2)本发明采用的多晶同时可作为场板,不增加额外的保护介质层,可实现成本控制。
附图说明
图1:N型硅衬底;
图2:N型硅衬底场氧化层;
图3:有源区分压环光刻刻蚀后芯片剖面图;
图4:有源区激光退火后结构图;
图5:终端场板结构图;
其中:
1N型硅衬底层;2SiO2层;3P+层;4深能级掺杂层;5多晶。
具体实施方式
以下通过具体实施例并结合附图进一步对本发明进行描述,但本发明并不限于以下实施例。
实施例1
一种所述的快速恢复二极管的制造方法,该方法包括如下步骤:
1)初始氧化:对均匀掺杂的N型硅衬底(见图1)进行清洗后,使用高温氧化的方法,在硅片表面生长氧化层2,厚度见图2;
2)形成有源区和分压环:通过涂胶,曝光,显影,刻蚀,去胶,形成有源区和终端区窗口;
3)形成PN结:为防止注入损伤,生长氧化层作为掩蔽层,后续进行硼注入,剂量为1e13-1e15,1200℃氮气下推结5-25μm,见图3;
4)多晶生长:淀积多晶厚度为利用POCl3或注入磷进行掺杂:
5)寿命控制:光刻,刻蚀多晶,露出有源区窗口,注入或溅射深能级杂质,并通过激光退火进行推结,见图4;
6)多晶场板:再次光刻,刻蚀多晶,实现终端场板结构,见图5;
7)阳极金属电极:蒸发或者溅射Al,通过光刻,刻蚀,去胶,合金,形成表面金属淀积,进行表面钝化;
8)阴极金属电极;形成Al/Ti/Ni/Ag或Ti/Ni/Ag背面金属电极。
Claims (1)
1.一种快速恢复二极管的制造方法,所述二极管包括:具有三个具有间隔的P型硅区(3)的且表面有氧化层(2)的N型硅衬底(1),所述氧化层(2)上的多晶层(5),所述多晶层(5)上的阳极金属层和所述N型硅衬底(1)上与其相对的阴极金属层,其特征在于,所述P型硅区(3)具有深能级掺杂区(4);
所述氧化层(2)的厚度为
所述多晶层(5)的材料为硅,厚度为
所述深能级掺杂区(4)的掺杂杂质为金、铂或钯;
其特征在于,该方法包括如下步骤:
1)初始氧化:对均匀掺杂清洗N型硅衬底,高温氧化所述衬底于表面生成氧化层,在硅片表面生长氧化层(2),厚度
2)形成有源区和分压环:涂胶、曝光、显影、刻蚀和去胶形成有源区和终端区窗口;
3)形成PN结:生长氧化层掩蔽层,注入硼,剂量为1e13-1e15,于1200℃氮气下推结5~25um;
4)多晶生长:淀积多晶厚度为利用POCl3或注入磷进行掺杂:
5)寿命控制:光刻,刻蚀多晶,暴露有源区窗口,注入或溅射深能级杂质,并激光退火进行推结;
6)多晶场板:再次光刻,刻蚀多晶,实现终端场板结构;
7)阳极金属电极:蒸发或者溅射Al,光刻,刻蚀,去胶,合金,形成表面金属淀积,进行表面钝化;
8)阴极金属电极:形成Al/Ti/Ni/Ag或Ti/Ni/Ag背面金属电极。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017579A (ja) * | 2000-12-05 | 2003-01-17 | Seiko Instruments Inc | 半導体装置とその製造方法 |
CN1489189A (zh) * | 2002-09-04 | 2004-04-14 | Lg. ������Lcd��ʽ���� | 制造具有低温多晶硅的顶栅型薄膜晶体管的方法 |
CN102569067A (zh) * | 2012-02-17 | 2012-07-11 | 北京时代民芯科技有限公司 | 一种平面高压超快软恢复二极管的制造方法 |
CN104157569A (zh) * | 2014-08-26 | 2014-11-19 | 清华大学 | 快恢复二极管制造工艺方法 |
CN104934372A (zh) * | 2015-05-15 | 2015-09-23 | 京东方科技集团股份有限公司 | 一种低温多晶硅薄膜及其制作方法、相关器件 |
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017579A (ja) * | 2000-12-05 | 2003-01-17 | Seiko Instruments Inc | 半導体装置とその製造方法 |
CN1489189A (zh) * | 2002-09-04 | 2004-04-14 | Lg. ������Lcd��ʽ���� | 制造具有低温多晶硅的顶栅型薄膜晶体管的方法 |
CN102569067A (zh) * | 2012-02-17 | 2012-07-11 | 北京时代民芯科技有限公司 | 一种平面高压超快软恢复二极管的制造方法 |
CN104157569A (zh) * | 2014-08-26 | 2014-11-19 | 清华大学 | 快恢复二极管制造工艺方法 |
CN104934372A (zh) * | 2015-05-15 | 2015-09-23 | 京东方科技集团股份有限公司 | 一种低温多晶硅薄膜及其制作方法、相关器件 |
Non-Patent Citations (2)
Title |
---|
Minority-carrier life time lateral non-uniform distribution fast recover diode;pan Feixi;Chinese Journal of Semiconductors;第25卷(第3期);297-301 * |
ZK1150/4500快恢复二极管的研制;郭永忠;吴飞鸟;王睿韬;李玉玲;;电力电子技术;第40卷(第05期);127-129 * |
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