CN105590907A - 一种汽车用二极管器件及其制造方法 - Google Patents
一种汽车用二极管器件及其制造方法 Download PDFInfo
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- CN105590907A CN105590907A CN201610112147.9A CN201610112147A CN105590907A CN 105590907 A CN105590907 A CN 105590907A CN 201610112147 A CN201610112147 A CN 201610112147A CN 105590907 A CN105590907 A CN 105590907A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910000679 solder Inorganic materials 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000003723 Smelting Methods 0.000 claims abstract description 10
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 10
- 239000010439 graphite Substances 0.000 claims abstract description 10
- 239000003822 epoxy resin Substances 0.000 claims abstract description 4
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims description 29
- 238000003466 welding Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 238000005476 soldering Methods 0.000 abstract description 13
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000035939 shock Effects 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610112147.9A CN105590907A (zh) | 2016-03-01 | 2016-03-01 | 一种汽车用二极管器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610112147.9A CN105590907A (zh) | 2016-03-01 | 2016-03-01 | 一种汽车用二极管器件及其制造方法 |
Publications (1)
Publication Number | Publication Date |
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CN105590907A true CN105590907A (zh) | 2016-05-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610112147.9A Pending CN105590907A (zh) | 2016-03-01 | 2016-03-01 | 一种汽车用二极管器件及其制造方法 |
Country Status (1)
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CN (1) | CN105590907A (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107658346A (zh) * | 2017-10-26 | 2018-02-02 | 捷捷半导体有限公司 | 一种高结温雪崩二极管芯片组件及其制造方法 |
CN107946219A (zh) * | 2017-12-11 | 2018-04-20 | 扬州扬杰电子科技股份有限公司 | 一种用于贴片二极管组焊的一体化生产设备 |
CN109473386A (zh) * | 2018-12-28 | 2019-03-15 | 乐山希尔电子股份有限公司 | 一种半导体器件组装方法及其生产线 |
CN111403359A (zh) * | 2020-03-18 | 2020-07-10 | 普森美微电子技术(苏州)有限公司 | 一种弯钩型大功率瞬态抑制二极管 |
EP3736853A1 (de) * | 2019-05-10 | 2020-11-11 | Robert Bosch GmbH | Kontaktanordnung und leistungsmodul |
CN113299616A (zh) * | 2021-05-06 | 2021-08-24 | 浙江里阳半导体有限公司 | 半导体器件的制造方法 |
CN115440607A (zh) * | 2022-10-13 | 2022-12-06 | 德欧泰克半导体(上海)有限公司 | 一种半导体封装工艺及应用于该工艺的石墨舟结构 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1041065A (zh) * | 1988-09-09 | 1990-04-04 | 莫托罗拉公司 | 功率器件的自对准电报 |
CN201853695U (zh) * | 2010-10-28 | 2011-06-01 | 宁波华龙电子股份有限公司 | 一种功率二极管引线框架 |
JP2012169477A (ja) * | 2011-02-15 | 2012-09-06 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
CN202678303U (zh) * | 2012-05-11 | 2013-01-16 | 苏州泰嘉电子有限公司 | 一种引线框架 |
CN205376496U (zh) * | 2016-03-01 | 2016-07-06 | 江苏捷捷微电子股份有限公司 | 一种汽车用二极管器件 |
-
2016
- 2016-03-01 CN CN201610112147.9A patent/CN105590907A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1041065A (zh) * | 1988-09-09 | 1990-04-04 | 莫托罗拉公司 | 功率器件的自对准电报 |
CN201853695U (zh) * | 2010-10-28 | 2011-06-01 | 宁波华龙电子股份有限公司 | 一种功率二极管引线框架 |
JP2012169477A (ja) * | 2011-02-15 | 2012-09-06 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
CN202678303U (zh) * | 2012-05-11 | 2013-01-16 | 苏州泰嘉电子有限公司 | 一种引线框架 |
CN205376496U (zh) * | 2016-03-01 | 2016-07-06 | 江苏捷捷微电子股份有限公司 | 一种汽车用二极管器件 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107658346A (zh) * | 2017-10-26 | 2018-02-02 | 捷捷半导体有限公司 | 一种高结温雪崩二极管芯片组件及其制造方法 |
CN107946219A (zh) * | 2017-12-11 | 2018-04-20 | 扬州扬杰电子科技股份有限公司 | 一种用于贴片二极管组焊的一体化生产设备 |
CN107946219B (zh) * | 2017-12-11 | 2024-01-30 | 扬州扬杰电子科技股份有限公司 | 一种用于贴片二极管组焊的一体化生产设备 |
CN109473386A (zh) * | 2018-12-28 | 2019-03-15 | 乐山希尔电子股份有限公司 | 一种半导体器件组装方法及其生产线 |
CN109473386B (zh) * | 2018-12-28 | 2023-10-24 | 乐山希尔电子股份有限公司 | 一种半导体器件组装方法及其生产线 |
EP3736853A1 (de) * | 2019-05-10 | 2020-11-11 | Robert Bosch GmbH | Kontaktanordnung und leistungsmodul |
DE102019206824A1 (de) * | 2019-05-10 | 2020-11-12 | Robert Bosch Gmbh | Kontaktanordnung und Leistungsmodul |
CN111403359A (zh) * | 2020-03-18 | 2020-07-10 | 普森美微电子技术(苏州)有限公司 | 一种弯钩型大功率瞬态抑制二极管 |
CN111403359B (zh) * | 2020-03-18 | 2023-08-25 | 普森美微电子技术(苏州)有限公司 | 一种弯钩型大功率瞬态抑制二极管 |
CN113299616A (zh) * | 2021-05-06 | 2021-08-24 | 浙江里阳半导体有限公司 | 半导体器件的制造方法 |
CN115440607A (zh) * | 2022-10-13 | 2022-12-06 | 德欧泰克半导体(上海)有限公司 | 一种半导体封装工艺及应用于该工艺的石墨舟结构 |
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C06 | Publication | ||
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TA01 | Transfer of patent application right |
Effective date of registration: 20180201 Address after: No. 8 Xinglong Road, Qidong science and Technology Pioneer Park, Nantong, Jiangsu Province Applicant after: Agile Semiconductor Ltd Address before: No. 8 Xinglong Road, Qidong science and Technology Pioneer Park, Nantong, Jiangsu Province Applicant before: Jiangsu Jiejie Microelectronics Co., Ltd. |
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TA01 | Transfer of patent application right | ||
CB02 | Change of applicant information |
Address after: 226200 Jinggangshan 6, Sutong science and Technology Industrial Park, Nantong, Jiangsu Province, Jinggangshan Applicant after: Agile Semiconductor Ltd Address before: No. 8 Xinglong Road, Qidong science and Technology Pioneer Park, Nantong, Jiangsu Province Applicant before: Agile Semiconductor Ltd |
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Application publication date: 20160518 |
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