CN104766893A - 一种薄膜晶体管及其制备方法 - Google Patents

一种薄膜晶体管及其制备方法 Download PDF

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CN104766893A
CN104766893A CN201510184202.0A CN201510184202A CN104766893A CN 104766893 A CN104766893 A CN 104766893A CN 201510184202 A CN201510184202 A CN 201510184202A CN 104766893 A CN104766893 A CN 104766893A
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李娟�
张建军
吴玉祥
熊绍珍
蔡宏琨
倪牮
杜阳阳
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Nankai University
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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    • H01—ELECTRIC ELEMENTS
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    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
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    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors

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Abstract

一种薄膜晶体管，由衬底、栅电极、栅绝缘层、有源沟道层和源漏电极叠加组成，其中有源沟道层为有机/无机复合钙钛矿薄膜，各层薄膜的厚度为：栅电极1μm、栅绝缘层200-400nm、有源沟道层200-300nm、源漏电极1μm。本发明的优点是：该薄膜晶体管将有机/无机复合钙钛矿材料用于薄膜晶体管的有源沟道层，结合了无机半导体的高迁移率和有机半导体的柔韧、便宜，低温易制备等优点，既具有比有机薄膜晶体管更高的驱动能力，同时又兼具简单、低成本及易于在柔性衬底上的大面积制备的能力；其制备方法简单易行，有利于工业化应用。

Description

一种薄膜晶体管及其制备方法
技术领域
本发明涉及薄膜晶体管的制备技术，具体涉及一种薄膜晶体管及其制备方法。
背景技术
薄膜晶体管(Thing Film Transistor(TFT))广泛应用于在平板显示、电子纸、传感器、智能卡等领域。按其有源沟道层材料的不同，薄膜晶体管包括无机薄膜晶体管和有机薄膜晶体管两大类。无机薄膜晶体管具有较好的器件性能，但其制备工艺较有机的复杂、成本较高、柔韧性不佳且一般需要经历高温制备，对满足目前快速发展的低成本、超薄大面积柔性电子器件的需要有很大难度，例如柔性平板显示器，可穿戴设备、生物医学传感器等。与无机薄膜晶体管相比，有机薄膜晶体管有其特有优点：1)制造工艺简单，可采用旋涂、印刷及真空蒸镀的方法，故成本低，并可以在室温下加工，这使其可以直接沉积在塑料衬底上；2)柔韧性好，进行适度的扭曲或弯曲，器件的光电特性没有显著的改变；3)材料的范围广；4)透明度好。因此，有机薄膜晶体管在需要低成本、超薄、大面积的柔性电子器件的领域有着广泛的应用前景，引起了越来越多的著名大公司和科研机构的注意。但是其低的载流子迁移率(一般小于1cm2/Vs)一直是有机TFT的难题。目前，虽有报道称单晶OTFT的迁移率可达5cm2/Vs-10cm2/Vs，但实现很困难，也很少见。有机半导体低的迁移率使其难以满足高速器件的驱动要求，严重制约了在高性能电子器件中的应用。因此，就需要一种既能像无机TFT那样满足高性能器件的驱动要求又同时兼具有机TFT低成本柔性衬底上大面积制备能力的新型场效应材料及其薄膜晶体管。近年来，某些有机/无机复合型钙钛矿材料，例如碘化铅甲胺等已在太阳电池中得到了很好的应用并取得了飞速发展。有机/无机复合型钙钛矿太阳电池于2009年第一次被报道，当时的效率只有3.8％，但随后提升速度骤升,最新报道已超过20％。它飞速的发展要归功于这种太阳电池的核心—有机/无机复合钙钛矿型的吸光材料，这种材料一般是具有钙钛矿晶型的有机金属卤化物例如碘化铅甲胺和碘化锡甲胺等。在这种钙钛矿ABX3结构中，A为甲胺基，B为金属原子(一般为铅和锡)，X为氯、溴、碘等卤素原子。
探究这种有机/无机复合钙钛矿型太阳电池之所以能取得良好性能的原因，一方面在于这种有机/无机复合型钙钛矿材料可以实现对可见光和部分近红外光的吸收，提高光吸收率，另一个更重要的原因在于：这种有机/无机复合型钙钛矿材料具有较长可达1μm的载流子扩散长度，比有机半导体大得多(10-80nm)。更值得注意的是，其空穴和电子具有相近的扩散长度，因此，光生载流子的快速分离将减少复合，能量损失小，不会产生空间电荷限制光电流，这正是有机/无机复合钙钛矿型太阳能电池能够实现高效率的重要原因。由近期对若干钙钛矿材料迁移率测量研究表明，它具有近乎高达几十至上百厘米方/伏秒的霍耳迁移率，而这些性能正是高性能薄膜晶体管有源沟道层所需要的。故我们认为，这种适用于太阳电池的有机/无机复合型钙钛矿材料应该也会是高性能薄膜晶体管所需要的高性能有源沟道材料。
本发明将有机/无机复合钙钛矿材料用于薄膜晶体管中的沟道层，利用其无机成分通过强烈的共价键或离子键相互作用构成混合物的基本骨架以提供高迁移率的载流子；有机成分则使该材料具有分子自组装能力，能像聚合物材料一样在室温下溶解，同时也为载流子的***提供分子轨道。因此，这种新型的有机/无机复合钙钛矿沟道的薄膜晶体管应该既具有较高的载流子迁移率，又能像有机薄膜晶体管那样能以旋涂、印刷、真空蒸镀等简单、低成本、低温的方式制备，从而具备柔性衬底上大面积的直接制备能力。这种新型的薄膜晶体管将在平板显示、传感器、智能卡、及柔性电子器件中有广阔的应用前景。
发明内容
本发明的目的是针对上述存在问题，提供一种薄膜晶体管及其制备方法，该薄膜晶体管以有机/无机复合钙钛矿薄膜为有源沟道层，具有较高的载流子迁移率，又能像有机薄膜晶体管那样能以旋涂、印刷、真空蒸镀等简单、低成本、低温的方式制备，从而具备柔性衬底上大面积的直接制备能力。
本发明的技术方案：
一种薄膜晶体管，由衬底、栅电极、栅绝缘层、有源沟道层和源漏电极叠加组成，其中有源沟道层为有机/无机复合钙钛矿薄膜，各层薄膜的厚度为：栅电极1μm、栅绝缘层200-400nm、有源沟道层200-300nm、源漏电极1μm。
一种所述薄膜晶体管的制备方法，步骤如下：
1)在衬底上采用掩膜版直接蒸镀法、蒸镀后光刻图形法、旋涂法或印刷法制备栅电极；
2)在上述制备栅电极的衬底上采用旋涂法制备栅绝缘层，旋涂条件为：2000-4000r/min、30-40s,然后在50-100℃温度下退火1-3小时；
3)在栅绝缘层上采用旋涂法旋涂有机/无机复合钙钛矿薄膜作为有源沟道层,旋涂条件为：3000-6000r/min、25-40s,然后在50-100℃温度下退火45-90min；
4)在上述有源沟道层上制备源漏电极。
所述衬底为玻璃或单晶硅片；栅电极为ITO或FTO；栅绝缘层材料为氮化硅、氧化硅、聚乙烯吡咯烷酮、聚甲基丙烯酸甲酯或聚乙烯醇；有源沟道层为CH3NH3PbI3、CH3NH3PbI3–xClx或CH3NH3SnI3；源漏电极为金、铝或银薄膜。
将有机/无机复合钙钛矿材料应用于薄膜晶体管沟道层，通过器件结构、工艺流程的设计，期望得到一种能满足高速器件驱动要求的高性能薄膜晶体管，同时又具备简单、低成本及柔性衬底上的大面积直接制备能力。这种新型的薄膜晶体管将在平板显示、传感器、智能卡、及柔性电子器件中有广阔的应用前景。
本发明的优点是：该薄膜晶体管将有机/无机复合钙钛矿材料用于薄膜晶体管的有源沟道层，结合了无机半导体的高迁移率和有机半导体的柔韧、便宜，低温易制备等优点，既具有比有机薄膜晶体管更高的驱动能力，同时又兼具简单、低成本及易于在柔性衬底上的大面积制备的能力；其制备方法简单易行，有利于工业化应用。
附图说明
图1为CH3NH3PbI3薄膜的XRD图。
图2为制备的CH3NH3PbI3为沟道层的薄膜晶体管的转移特性曲线(Vds＝-5v与Vds＝-20v)。
具体实施方式
下面结合实例对本发明的制备方法及产品应用做出详细说明。
实施例：
一种薄膜晶体管，由衬底、栅电极、栅绝缘层、有源沟道层和源漏电极叠加组成，其中有源沟道层为有机/无机复合钙钛矿薄膜，各层薄膜的厚度为：栅电极1μm、栅绝缘层260nm、有源沟道层200nm、源漏电极1μm；其制备步骤如下：
1)在玻璃衬底上采用掩膜版直接蒸镀法制备ITO栅电极，工艺条件为：压力1×10-3pa、电流100mA、蒸镀时间10min；
2)在上述制备栅电极的玻璃衬底上采用旋涂法制备PMMA栅绝缘层，旋涂条件为：转数2000r/min、旋涂时间30s,然后在100℃温度下退火1小时；
3)在栅绝缘层上采用旋涂法旋涂CH3NH3PbI3薄膜作为有源沟道层,旋涂条件为：转数3000r/min、旋涂时间25s,然后在100℃温度下退火1小时；
图1为CH3NH3PbI3薄膜的XRD图，图中可见出现了明显的晶化峰，且分别在2θ＝13.98°、28.32°、31.74°处对应出现(110)、(220)和(310)三个主要晶向，表明材料的四方晶体钙钛矿结构以及良好的结晶情况，初步制备了CH3NH3PbI3沟道层的TFT器件；
4)在上述有源沟道层上采用掩膜版真空蒸镀银，真空蒸镀条件为：压力1×10-3pa、电流100mA、蒸镀10min制备源漏电极。
图2为制备的CH3NH3PbI3为沟道层的薄膜晶体管的转移特性曲线(Vds＝-5v与Vds＝-20v)，图中表明：沟道电流随施加偏压的增加而增加并趋于饱和，Vds＝-5V时，开启电压约为-0.5V，开关比为104，显示出明显的场效应特点。

Claims (3)

1.一种薄膜晶体管，其特征在于：由衬底、栅电极、栅绝缘层、有源沟道层和源漏电极叠加组成，其中有源沟道层为有机/无机复合钙钛矿薄膜，各层薄膜的厚度为：栅电极1μm、栅绝缘层200-400nm、有源沟道层200-300nm、源漏电极1μm。
2.一种如权利要求1所述薄膜晶体管的制备方法，其特征在于步骤如下：
1)在衬底上采用掩膜版直接蒸镀法、蒸镀后光刻图形法、旋涂法或印刷法制备栅电极；
2)在上述制备栅电极的衬底上采用旋涂法制备栅绝缘层，旋涂条件为：2000-4000r/min、30-40s,然后在50-100℃温度下退火1-3小时；
3)在栅绝缘层上采用旋涂法旋涂有机/无机复合钙钛矿薄膜作为有源沟道层,旋涂条件为：3000-6000r/min、25-40s,然后在50-100℃温度下退火45-90min；
4)在上述有源沟道层上制备源漏电极。
3.权利要求2所述薄膜晶体管的制备方法，其特征在于：所述衬底为玻璃或单晶硅片；栅电极为ITO或FTO；栅绝缘层材料为氮化硅、氧化硅、聚乙烯吡咯烷酮、聚甲基丙烯酸甲酯或聚乙烯醇；有源沟道层为CH3NH3PbI3、CH3NH3PbI3–xClx或CH3NH3SnI3；源漏电极为金、铝或银薄膜。
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CN108023019A (zh) * 2017-12-19 2018-05-11 北京大学深圳研究生院 一种钙钛矿光电晶体管及其制备方法
CN108807672A (zh) * 2017-04-28 2018-11-13 清华大学 有机薄膜晶体管及其制备方法
CN109767989A (zh) * 2018-12-25 2019-05-17 西交利物浦大学 柔性衬底的薄膜晶体管及其制备方法
CN109962113A (zh) * 2019-03-28 2019-07-02 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板及其制备方法和显示面板
CN113130767A (zh) * 2021-04-16 2021-07-16 南开大学 一种混合维度复合钙钛矿薄膜及其制备方法和应用、光敏薄膜晶体管

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1266287A (zh) * 1999-03-03 2000-09-13 国际商业机器公司 用有机和无机杂化材料作半导电沟道的薄膜晶体管
US6344662B1 (en) * 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
US20030170918A1 (en) * 2002-03-08 2003-09-11 International Business Machines Corporation Low temperature melt-processing of organic-inorganic hybrid
CN101110448A (zh) * 2007-08-21 2008-01-23 友达光电股份有限公司 薄膜晶体管、像素结构及液晶显示面板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344662B1 (en) * 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
CN1266287A (zh) * 1999-03-03 2000-09-13 国际商业机器公司 用有机和无机杂化材料作半导电沟道的薄膜晶体管
US20030170918A1 (en) * 2002-03-08 2003-09-11 International Business Machines Corporation Low temperature melt-processing of organic-inorganic hybrid
CN101110448A (zh) * 2007-08-21 2008-01-23 友达光电股份有限公司 薄膜晶体管、像素结构及液晶显示面板

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
C.R.KAGAN ET AL.: "Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect Transistors", 《SCIENCE》 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108807672A (zh) * 2017-04-28 2018-11-13 清华大学 有机薄膜晶体管及其制备方法
CN108807672B (zh) * 2017-04-28 2020-03-17 清华大学 有机薄膜晶体管及其制备方法
CN108023019A (zh) * 2017-12-19 2018-05-11 北京大学深圳研究生院 一种钙钛矿光电晶体管及其制备方法
CN108023019B (zh) * 2017-12-19 2024-01-02 北京大学深圳研究生院 一种钙钛矿光电晶体管及其制备方法
CN109767989A (zh) * 2018-12-25 2019-05-17 西交利物浦大学 柔性衬底的薄膜晶体管及其制备方法
CN109962113A (zh) * 2019-03-28 2019-07-02 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板及其制备方法和显示面板
CN113130767A (zh) * 2021-04-16 2021-07-16 南开大学 一种混合维度复合钙钛矿薄膜及其制备方法和应用、光敏薄膜晶体管

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