CN104570200A - Silicon-based waveguide-improved silicon dioxide-based array waveguide grating device and manufacturing method thereof - Google Patents
Silicon-based waveguide-improved silicon dioxide-based array waveguide grating device and manufacturing method thereof Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 330
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 164
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 230000008878 coupling Effects 0.000 claims abstract description 49
- 238000010168 coupling process Methods 0.000 claims abstract description 49
- 238000005859 coupling reaction Methods 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 82
- 230000007246 mechanism Effects 0.000 claims description 43
- 230000006872 improvement Effects 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 5
- 238000005457 optimization Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000035800 maturation Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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Abstract
The invention discloses an improved silicon dioxide-based array waveguide grating and a manufacturing method thereof. The silicon dioxide-based array waveguide grating comprises input waveguides, output waveguides, slab waveguides, and an array waveguide with an adjacent length difference, wherein each of the input waveguides and the output waveguides comprises a silicon dioxide-based waveguide part and a silicon-based waveguide part which are connected through a second coupler; the silicon-based waveguide parts of the input or output waveguides are connected with a Rowland circle of the silicon dioxide-based slab waveguides through first couplers; the second couplers for connecting the silicon-based waveguides with the silicon dioxide-based waveguides are positioned at enough distances after the input or output waveguides of the silicon-based waveguides are gradually separated; the channel spacing of the silicon-based array waveguide grating is in direct proportion to the intervals of the input or output waveguides; in order to avoid crosstalk caused by coupling between the input or output waveguides as much as possible, enough distances between the input or output waveguides are required for decoupling; the input or output waveguides of the silicon dioxide-based array waveguide grating are replaced with the silicon-based waveguides so as to reduce the channel spacing thereof. The silicon dioxide-based array waveguide grating has the advantages of mature process, simplicity in operation, low cost and the like.
Description
Technical field
The invention belongs to the wavelength-division multiplex field in optical fiber communication, relate to silicon-dioxide-substrate and silica-based waveguides, be specifically related to a kind of device and method for making of the silicon-dioxide-substrate array waveguide grating utilizing silica-based waveguides to carry out improving.
Background technology
In modern optical communication systems, people grow with each passing day for the requirement of the rate of information throughput and device integration.Array waveguide grating is typical integrated-type dense wave division multiplexer part, is combined by input and output waveguide, planar waveguide and Waveguide array.It can make the transmission admixed together of multiple wavelength light, can separate after reaching home by wavelength, greatly improves the transmission capacity of optical fiber and is easy to integrated [1,2].Silicon-dioxide-substrate array waveguide grating, after the development of experience long period, has all developed to obtain very ripe [3-6] to the optimization of various aspects of performance, and its processing technology and traditional cmos process compatibility, experienced.But need larger to avoid the crosstalk caused that is coupled between waveguide because silicon-dioxide-substrate inputs or outputs waveguide spacing.And the channel spacing of array waveguide grating to input or output waveguide spacing and be directly proportional, therefore the channel spacing of silicon-dioxide-substrate array waveguide grating is general larger, common are 200GHz, 100GHz etc. [7,8] under general technology and technical conditions, namely wavelength resolution is poor.If reach less resolution, generally need the size of array waveguide grating obviously to increase, its cost is corresponding raising also, and this is unacceptable in many applications.Do not increase its size for improving wavelength resolution performance, the present invention utilizes silica-based waveguides to improve silicon-dioxide-substrate array waveguide grating simultaneously.Waveguide will be inputed or outputed replace with silica-based waveguides and can greatly reduce waveguide spacing, thus reduce channel spacing, improve wavelength resolution.Replace with inputing or outputing after waveguide separates enough distances gradually of silica-based waveguides and replace back silica-based waveguide again to ensure that the array waveguide grating after improving still can be used for former application scenario.The present invention can ensure while the Performance Optimization technique and manufacturing technique method of the silicon-dioxide-substrate array waveguide grating making full use of existing maturation, improves its wavelength resolution performance with method that is comparatively simple, convenient, low cost.
Prior art document is see as follows:
[1]Smit,M.K.New focusing and dispersive planar component based on an optical phased array.Electron.Lett.1988.24:385-386.
[2]Takahashi,H.S.Suzuki,K.Kato and I.Nishi.Arrayed-waveguide grating for wavelength division multi/demultiplexer with nanometer resolution.Electron.Lett.1990.26:87-88.
[3]Uetsuka,H.,K.Akiba,H.Okano and Y.Kurosawa.Nove 1×N guide-wave multi/demultiplexer for WDM.Proc.OFC’95 Tu07,p.276.
[4]Osamu Ishida,Hiroshi Takahashi.1995.Loss-Imbalance Equalization in Arrayed-Waveguide-Grating(AWG)Multiplexer Cascades.Journal of Lightwave Technology.June 1995.Vol.13,No.6,pp.1155-1163.
[5]Okamoto K.and A.Sugita.Flat spectral response arrayed-waveguide grating multiplexer with parabolic waveguide horns.Electron.Lett.1996.32:1661–1662.
[6]Y.Inoue,A.Kaneko,F.Hanawa,H.Takahashi,K.Hattori and S.Sumida.Athermal silica-based arrayed-waveguide grating multiplexer.Electron.Lett.6th November 1997.Vol.33,No.23,pp.1945-1947.
[7]LI Jian,AN Jun-ming,WANG Hong-jie,HU Xiong-wei.Silica based 16×0.8nm arrayed waveguide grating multiplexer design,fabrication and testing.Optical Technique.May 2005.Vol.31,No.3,pp.349-353.
[8]OU Hai-yan,LEI Hong-bing,YANG Qin-qing,YU Jin-zhong and WANG Qi-ming.Simple Method for Designing 1×8 Arrayed-Waveguide Grating Multi/Demultiplexers.Chinese Journal of Semiconductors.Aug 2000.Vol.21,No.8,pp.798-802.
Summary of the invention
The object of the invention is, in order to solve the poor problem of silicon-dioxide-substrate array waveguide grating wavelength resolution, the device of a kind of silicon-dioxide-substrate array waveguide grating utilizing silica-based waveguides to improve of proposition and method for making.
Technical scheme of the present invention is as following:
(1) a kind of silicon-dioxide-substrate array waveguide grating of improvement, it is characterized in that the Waveguide array comprising input and output waveguide, planar waveguide and there is adjacent lengths difference, input and output waveguide includes the silica-based waveguide part and silica-based waveguides part that utilize the second coupling mechanism to connect, wherein utilizes the silica-based waveguides part for inputing or outputing waveguide that the first coupling mechanism is connected with silicon-dioxide-substrate planar waveguide Rowland circle; For the second coupling mechanism that silica-based waveguides is connected with silica-based waveguide, the waveguide that inputs or outputs being positioned at silica-based waveguides separates rear enough distances gradually.
For suppressing by inputing or outputing the crosstalk brought that to be coupled between waveguide as far as possible, inputing or outputing waveguide spacing needs to keep enough large.The solution coupling distance of silica-based waveguides can be low to moderate several microns, and the solution coupling distance of silica-based waveguide is generally tens microns even tens microns.Input or output after waveguide replaces with silica-based waveguides from the above by silicon-dioxide-substrate array waveguide grating, wavelength resolution performance will be greatly improved.
After distance when between the silica-based waveguides part inputing or outputing waveguide is separated into SiO 2 waveguide solution coupling distance, above-mentioned second coupling mechanism can be utilized to connect follow-up silica-based waveguide part, to keep the former applicable situation of silicon-dioxide-substrate array waveguide grating.
The waveguide that silica-based waveguides general reference material component in the present invention is siliceous, but not be limited to the waveguide that sandwich layer is pure silicon.High index waveguide or " siliceous waveguide ".
(2) the silicon-dioxide-substrate array waveguide grating of a kind of improvement described in (1), the second coupling mechanism wherein inputing or outputing waveguide silica-based and silica-based waveguide part separately for being coupled adopts following structure: the xsect of silica-based waveguides reduces gradually, the part that silica-based waveguides xsect reduces gradually is doped germanium, nitrogen, in the element such as boron or phosphorus, the high index silicon dioxide of at least one covers, covering is outer with comparatively low refractive index silica covering, the sandwich layer size of the silica-based waveguide of follow-up connection is consistent with the high index silicon dioxide cross sectional dimensions that above-mentioned silica-based waveguides covers outward, refractive index is consistent or close.
(3) silica-based waveguides xsect is reduced to a certain degree (as width is less than 100 nanometers) gradually, light field will be distributed in the silicon dioxide of outer doping in a large number, mould field size increases, effective refractive index reduces, thus mate with the sandwich layer of the follow-up silica-based waveguide be connected, realize coupling.
(4) the silicon-dioxide-substrate array waveguide grating of the improvement described in (1), comprises conveying type array waveguide grating and reflection type array wave-guide grating.
(5) the silicon-dioxide-substrate array waveguide grating of the improvement described in (1), comprises the array waveguide grating of single input waveguide and the array waveguide grating of multiple input waveguide.
(6) the silicon-dioxide-substrate array waveguide grating of the improvement described in (1), wherein silica-based waveguides sandwich layer comprises at least one in the materials such as silicon, silicon nitride, silicon oxynitride.
(7) a kind of method making the silicon-dioxide-substrate array waveguide grating of improvement, it is characterized in that: make silicon-dioxide-substrate planar waveguide, silicon-dioxide-substrate Waveguide array, the silica-based waveguide part of input and output waveguide and silica-based waveguides part, making the second coupling mechanism of inputing or outputing waveguide silica-based and silica-based waveguide part separately for being coupled and for silicon-dioxide-substrate planar waveguide and the first coupling mechanism of silica-based waveguides part inputing or outputing waveguide of being coupled; Wherein in the second coupling mechanism, silica-based waveguides xsect reduction part is gradually doped the high index silicon dioxide covering of at least one in the elements such as germanium, nitrogen, boron or phosphorus, covering is outer with comparatively low refractive index silica covering, the sandwich layer size of the silica-based waveguide of follow-up connection is consistent with the high index silicon dioxide cross sectional dimensions that above-mentioned silica-based waveguides covers outward, and refractive index is consistent or close.
(8) method of the silicon-dioxide-substrate array waveguide grating that the making described in (7) improves, the silica-based waveguide part of wherein silicon-dioxide-substrate planar waveguide, silicon-dioxide-substrate Waveguide array, input and output waveguide first machines; Then machining the silica-based waveguides part of input and output waveguide, inputing or outputing the second coupling mechanism of waveguide silica-based and silica-based waveguide part separately for being coupled and for being coupled silicon-dioxide-substrate planar waveguide and input or output first coupling mechanism of silica-based waveguides part of waveguide.
(9) method of the silicon-dioxide-substrate array waveguide grating that making described in (7) improves, the silica-based waveguides part of input and output waveguide, input or output for being coupled waveguide silica-based and silica-based waveguide part separately the second coupling mechanism and machine for the first coupling mechanism of be coupled silicon-dioxide-substrate planar waveguide and the silica-based waveguides part that inputs or outputs waveguide simultaneously.Such as a kind of Method Of Accomplishment is: first deposit thin films of silicon completes the device surface of silica-based waveguide part; Then with same step photoetching or same step electron beam exposure determine input and output waveguide silica-based waveguides part, input or output for being coupled waveguide silica-based and silica-based waveguide part separately the second coupling mechanism and for being coupled silicon-dioxide-substrate planar waveguide and input or output the basic plane pattern of the first coupling mechanism of silica-based waveguides part of waveguide; And then complete simultaneously etching input and output waveguide silica-based waveguides part, input or output for being coupled waveguide silica-based and silica-based waveguide part separately the second coupling mechanism and for being coupled silicon-dioxide-substrate planar waveguide and input or output first coupling mechanism of silica-based waveguides part of waveguide.
(10) method of the silicon-dioxide-substrate array waveguide grating that making described in (7) improves, the silica-based waveguides part of wherein input and output waveguide, input or output for being coupled waveguide silica-based and silica-based waveguide part separately the second coupling mechanism and first machine for the first coupling mechanism of be coupled silicon-dioxide-substrate planar waveguide and the silica-based waveguides part that inputs or outputs waveguide; Then the silica-based waveguide part of silicon-dioxide-substrate planar waveguide, silicon-dioxide-substrate Waveguide array, input and output waveguide is machined.Such as a kind of Method Of Accomplishment is: the silica-based waveguides part of first machine silicon based waveguides input and output waveguide in a silicon-on-insulator substrate, input or output for being coupled waveguide silica-based and silica-based waveguide part separately the second coupling mechanism and for being coupled silicon-dioxide-substrate planar waveguide and input or output first coupling mechanism of silica-based waveguides part of waveguide.A kind of job operation with described in (9), but goes up existing monocrystalline silicon layer most, without the need to deposit thin films of silicon because of silicon-on-insulator substrate.Then then silica-based waveguide part is processed.
Wherein input and output waveguide silica-based waveguides part, input or output for being coupled waveguide silica-based and silica-based waveguide part separately the second coupling mechanism and first machine for the first coupling mechanism of be coupled silicon-dioxide-substrate planar waveguide and the silica-based waveguides part that inputs or outputs waveguide; Then the silica-based waveguide part of silicon-dioxide-substrate planar waveguide, silicon-dioxide-substrate Waveguide array, input and output waveguide is machined.
The silica-based waveguides part of input and output waveguide, input or output for being coupled waveguide silica-based and silica-based waveguide part separately the second coupling mechanism and machine for the first coupling mechanism of be coupled silicon-dioxide-substrate planar waveguide and the silica-based waveguides part that inputs or outputs waveguide simultaneously.
(11) method of the silicon-dioxide-substrate array waveguide grating that the making described in (7) improves, comprises conveying type array waveguide grating and reflection type array wave-guide grating.
(12) method of the silicon-dioxide-substrate array waveguide grating that the making described in (7) improves, comprises the array waveguide grating of single input waveguide and the array waveguide grating of multiple input waveguide.
(13) method of the silicon-dioxide-substrate array waveguide grating that the making described in (7) improves, wherein silica-based waveguides sandwich layer comprises at least one in the materials such as silicon, silicon nitride, silicon oxynitride.
(14) linear dispersion of array waveguide grating
Array waveguide grating is made up of input and output waveguide, planar waveguide and Waveguide array, and on the same substrate integrated.As shown in Figure 3, the input of array waveguide grating, the port distribution of output waveguide are respectively R at diameter
iand R
orowland circle on, and adjacent waveguide spacing is Δ x
iwith Δ x
o.The port of Waveguide array is distributed in one more (generally, radius is Rowland circle 2 times) in great circle respectively, and spacing is respectively d
iand d
o.The length of Waveguide array adjacent waveguide difference Δ L, is exported by the light of the different wave length of a certain input waveguide incidence will there is different phase differential at Waveguide array.The focal length of planar waveguide is respectively f
iand f
o(generally, f
i=R
i, f
o=R
o).If by the port distribution of output waveguide on the focal line of planar waveguide, then the light of different wave length strengthens relevant in different output waveguide porch.Rowland circle is defined as follows: on concave spherical mirror face, delineate the reflection grating that a series of equally spaced parallel lines is formed, it has light splitting ability and light gathering.If seam light source and concave grating are placed on diameter equal concave grating radius-of-curvature circumferentially, and this circle is tangent with grating mid point G, then the spectrum formed by concave grating is that at this circumferentially this circle is called Rowland circle.
According to multiple-beam interference principle, utilize the light of AWG demultiplexing should meet following grating equation:
n
sd
isinθ
i+n
cΔL+n
sd
osinθ
o＝mλ，
On the left of equation, Section 1 is the optical path difference that i-th input waveguide is transferred to adjacent two Waveguide arrays, and Section 2 is the optical path difference that light is introduced when adjacent two Waveguide arrays transmission, and Section 3 is the optical path difference that adjacent two Waveguide arrays are transferred to the waveguide of jth root.
N in formula
sand n
cbe respectively the effective refractive index of planar waveguide and Waveguide array, m is diffraction progression, θ
iand θ
othe angle of corresponding input, output waveguide and central waveguide.
θ
i＝iΔx
i/f
i＝x
i/f
i，
θ
o＝jΔx
o/f
o＝x
o/f
o，
Δ x
iwith Δ x
ofor input and output waveguide spacing, f
iand f
obe respectively two planar waveguide focal lengths; I and j is the waveguide sequence of input and output waveguide respectively.D
iand d
obe Waveguide array spacing, Δ L is the length difference of adjacent array waveguide.
The θ that general input and output waveguide is corresponding
iand θ
oall very little, can be similar to: sin θ
i=θ
i, sin θ
o=θ
o.Therefore, grating equation can be approximately:
n
sd
iθ
i+n
cΔL+n
sd
oθ
o＝mλ，
For central wavelength lambda
0, when it is by the incidence of center input waveguide and from the output of center output waveguide, i.e. θ
i=θ
owhen=0, Huo Bucong center input waveguide is incident, but meets d
iθ
i=-d
oθ
otime, Section 1 and Section 3 and be 0 on the left of equal sign in above formula, therefore central wavelength lambda
0meet:
n
cΔL＝mλ
0，
That is: Δ L=m λ
0/ n
c=mc/ (n
cν
0),
In formula, λ
0the centre wavelength in vacuum, ν
0it is the centre frequency in vacuum.Therefore, after determining diffraction progression m, Δ L also just determines, and generally larger m can produce higher resolution.
The outgoing position of centre wavelength meets following formula:
When the light of a certain wavelength is incident from i-th input waveguide, incidence angle θ
i=i Δ θ
ifor constant.
When the light of this wavelength exports from jth bar output waveguide, emergence angle θ
o=j Δ θ
o, θ
orelevant with wavelength X, be designated as θ
o=θ
o(λ).
The effective refractive index n of planar waveguide and Waveguide array
sand n
calso be the function of wavelength X, be designated as n
s=n
s(λ), n
c=n
c(λ).
Grating equation is differentiated can obtain wavelength X:
Obtain thus:
Can turn to:
Mf
iand mf
ogeneral very large, in formula, in bracket, last can be ignored, and above formula is approximately:
Above formula bracket mean terms is the group index of Waveguide array, then angular dispersion equation is:
Corresponding linear dispersion equation easily pushes away:
In like manner, can be derived from the angular dispersion of input waveguide and linear dispersion equation are respectively:
Said process is for conveying type array waveguide grating, and reflection type array wave-guide grating principle is consistent with above-mentioned, and just to become input and output waveguide public for planar waveguide, and Waveguide array end adds a reflection unit, and adjacent lengths difference becomes original half.
As can be seen here, the token state Δ λ of array waveguide grating wavelength resolution performance is directly proportional to the spacing inputing or outputing waveguide:
As can be seen from above formula, Δ λ and Δ x
i/oproportional relation.Noting reducing Δ λ also can by increasing m (namely increasing Δ L) or increasing f
i/ocome, but these methods all obviously can increase the size of array waveguide grating, its cost is also corresponding to be significantly improved, and this is unacceptable in many applications.
Beneficial effect: because silica-based waveguides solution coupling distance is lower than silica-based waveguide, therefore the waveguide that inputs or outputs of silicon-dioxide-substrate array waveguide grating can be replaced with silica-based waveguides to reduce its channel spacing.Until it gradually separately after enough distances, recycle silica-based and silica-based waveguide coupling mechanism and convert back silica-based waveguide.This improvement maintains the original advantage of silicon-dioxide-substrate array waveguide grating and the scope of application, takes full advantage of Performance Optimization technique and the manufacturing technique method of its existing maturation, and effectively improves its wavelength resolution performance or reduce its size.Replace with the method for silica-based waveguides and Conventional CMOS technology is compatible by inputing or outputing waveguide, there is technical maturity, simple to operate, low cost and other advantages.Especially 1) effectively improve the wavelength resolution performance of silicon-dioxide-substrate array waveguide grating or reduce its size.2) input or output waveguide and replace with the technology of silica-based waveguides simply, technical maturity, cost is low, compatible with Conventional CMOS technology.3) still keep the original advantage of silicon-dioxide-substrate array waveguide grating and the scope of application, still can make full use of Performance Optimization technique and the manufacturing technique method of the silicon-dioxide-substrate array waveguide grating of existing maturation.
Accompanying drawing explanation
Fig. 1 is the silicon-dioxide-substrate conveying type array waveguide grating schematic diagram utilizing silica-based waveguides to improve;
Fig. 2 is the silicon-dioxide-substrate reflection type array wave-guide grating schematic diagram utilizing silica-based waveguides to improve;
Fig. 3 is array waveguide grating planar waveguide Rowland circle schematic diagram;
Fig. 4 is the second coupling mechanism schematic diagram inputing or outputing waveguide silica-based and silica-based waveguide part separately for being coupled;
Fig. 5 is the silicon chip cross sectional representation (cross section by waveguide axis in Fig. 4) after the present invention's processing used;
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
Basic thought of the present invention utilizes silica-based waveguides to carry out silicon-dioxide-substrate array waveguide grating improving the optimization realized wavelength resolution performance.
1. make the silicon-dioxide-substrate array waveguide grating utilizing silica-based waveguides to improve
Adopt scheme as illustrated in fig. 1 or fig. 2, make the silicon-dioxide-substrate array waveguide grating utilizing silica-based waveguides to improve.
Adopting the silicon chip after the processing of xsect as shown in Figure 5, being wherein processed as Fig. 5 left side structure for making silica-based waveguide part, being processed as Fig. 5 right side structure for making silica-based waveguides part.
Shown in Fig. 5, the doping silicon dioxide surface part of silicon chip produces the silica-based waveguide part of silicon-dioxide-substrate planar waveguide, silicon-dioxide-substrate Waveguide array, input and output waveguide; Shown in Fig. 5, the silicon surface part of silicon chip produces the silica-based waveguides part of input and output waveguide and the xsect constantly reduction part of the silica-based waveguides shown in Fig. 4.Produce for being coupled silicon-dioxide-substrate planar waveguide and input or output first coupling mechanism of silica-based waveguides part of waveguide.As shown in Figure 4, the silicon dioxide that part covers the high index of at least one in the elements such as doped germanium, nitrogen, boron or phosphorus is constantly reduced at the xsect of silica-based waveguides, press again shown in Fig. 5, sentence the lower silicon dioxide covering of refractive index thereon and at the waveguiding structure etc. that the doping silicon dioxide surface part of silicon chip is produced, complete the making (unspecified is all prior art processes) of the second coupling mechanism and waveguide.
2. the wavelength resolution of the silicon-dioxide-substrate array waveguide grating utilizing silica-based waveguides to improve
If a certain silicon-dioxide-substrate array waveguide grating parameter is:
λ
0＝1.55μm，
Port number N=8,
Input waveguide spacing: Δ x
i=28 μm,
Output waveguide spacing: Δ x
o=28 μm,
Channel spacing Δ λ=1.6nm.
Utilize silica-based waveguides to replace and above-mentioned input or output waveguide, inputing or outputing waveguide spacing can be reduced into:
Δx
i＝Δx
o＝3μm，
Other parameters can remain unchanged, according to
Known under other parameter constant conditions of maintenance, channel separation can be reduced in theory:
Effectively improve wavelength resolution performance;
If Δ λ remains unchanged, then m (determining Δ L) or f
i/ocorrespondingly can diminish, thus effectively reduce its size.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. the silicon-dioxide-substrate array waveguide grating improved, it is characterized in that the Waveguide array comprising input and output waveguide, planar waveguide and there is adjacent lengths difference, input and output waveguide includes the silica-based waveguide part and silica-based waveguides part that utilize the second coupling mechanism to connect, wherein utilizes the silica-based waveguides part for inputing or outputing waveguide that the first coupling mechanism is connected with silicon-dioxide-substrate planar waveguide Rowland circle; For the second coupling mechanism that silica-based waveguides is connected with silica-based waveguide, the waveguide that inputs or outputs being positioned at silica-based waveguides separates rear enough distances gradually.
2. the silicon-dioxide-substrate array waveguide grating of a kind of improvement according to claim 1, it is characterized in that: the second coupling mechanism wherein inputing or outputing waveguide silica-based and silica-based waveguide part separately for being coupled adopts following structure: the xsect of silica-based waveguides reduces gradually, silica-based waveguides xsect reduction part is gradually doped germanium, nitrogen, in the element such as boron or phosphorus, the high index silicon dioxide of at least one covers, covering is outer with comparatively low refractive index silica covering, the sandwich layer size of the silica-based waveguide of follow-up connection is consistent or close with the high index silicon dioxide cross sectional dimensions that above-mentioned silica-based waveguides covers outward, refractive index is consistent or close.
3. the silicon-dioxide-substrate array waveguide grating of improvement according to claim 1, is characterized in that array waveguide grating comprises conveying type array waveguide grating and reflection type array wave-guide grating.
4. the silicon-dioxide-substrate array waveguide grating of improvement according to claim 1, is characterized in that array waveguide grating comprises the array waveguide grating of single input waveguide and the array waveguide grating of multiple input waveguide.
5. the silicon-dioxide-substrate array waveguide grating of improvement according to claim 1, is characterized in that wherein silica-based waveguides sandwich layer comprises at least one in the materials such as silicon, silicon nitride, silicon oxynitride.
6. one kind makes the method for the silicon-dioxide-substrate array waveguide grating of improvement, it is characterized in that: make silicon-dioxide-substrate planar waveguide, silicon-dioxide-substrate Waveguide array, the silica-based waveguide part of input and output waveguide and silica-based waveguides part, making the second coupling mechanism of inputing or outputing waveguide silica-based and silica-based waveguide part separately for being coupled and for silicon-dioxide-substrate planar waveguide and the first coupling mechanism of silica-based waveguides part inputing or outputing waveguide of being coupled; Wherein in the second coupling mechanism, the xsect of silica-based waveguides reduces gradually, the high index silicon dioxide that silica-based waveguides xsect reduction part is gradually doped at least one in the elements such as germanium, nitrogen, boron or phosphorus covers, covering is outer with comparatively low refractive index silica covering, the sandwich layer size of the silica-based waveguide of follow-up connection is consistent or close with the high index silicon dioxide cross sectional dimensions that above-mentioned silica-based waveguides covers outward, and refractive index is consistent or close.
7. the method making the silicon-dioxide-substrate array waveguide grating improved according to claim 6, is characterized in that: the silica-based waveguide part of wherein silicon-dioxide-substrate planar waveguide, silicon-dioxide-substrate Waveguide array, input and output waveguide first machines; Then machining the silica-based waveguides part of input and output waveguide, inputing or outputing the second coupling mechanism of waveguide silica-based and silica-based waveguide part separately for being coupled and for being coupled silicon-dioxide-substrate planar waveguide and input or output first coupling mechanism of silica-based waveguides part of waveguide.
8. according to claim 6ly make the method for silicon-dioxide-substrate array waveguide grating improved, it is characterized in that: the silica-based waveguides part of input and output waveguide, input or output for being coupled waveguide silica-based and silica-based waveguide part separately the second coupling mechanism and machine for the first coupling mechanism of be coupled silicon-dioxide-substrate planar waveguide and the silica-based waveguides part that inputs or outputs waveguide simultaneously.
9. according to claim 6ly make the method for silicon-dioxide-substrate array waveguide grating improved, it is characterized in that: the silica-based waveguides part of wherein input and output waveguide, input or output for being coupled waveguide silica-based and silica-based waveguide part separately the second coupling mechanism and first machine for the first coupling mechanism of be coupled silicon-dioxide-substrate planar waveguide and the silica-based waveguides part that inputs or outputs waveguide; Then the silica-based waveguide part of silicon-dioxide-substrate planar waveguide, silicon-dioxide-substrate Waveguide array, input and output waveguide is processed.
10. according to claim 6ly make the method for silicon-dioxide-substrate array waveguide grating improved, it is characterized in that: the silica-based waveguides part of input and output waveguide, input or output for being coupled waveguide silica-based and silica-based waveguide part separately the second coupling mechanism and machine for the first coupling mechanism of be coupled silicon-dioxide-substrate planar waveguide and the silica-based waveguides part that inputs or outputs waveguide simultaneously.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106443879A (en) * | 2016-10-21 | 2017-02-22 | 浙江工业大学 | Low crosstalk array waveguide grating |
| CN109239940A (en) * | 2018-11-02 | 2019-01-18 | 京东方科技集团股份有限公司 | A kind of light-dividing device and preparation method thereof, optical dispersion method and spectrometer |
| CN110031466A (en) * | 2019-04-25 | 2019-07-19 | 山东大学 | A kind of contact-type linear concentration sensor and its fluid detection method based on array wave-guide grating structure |
| CN110989079A (en) * | 2019-12-23 | 2020-04-10 | 湖北工业大学 | Air cladding SU8 array waveguide grating |
| CN111323120A (en) * | 2018-12-17 | 2020-06-23 | 绍兴图聚光电科技有限公司 | High-resolution spectrometer based on etched diffraction grating |
| CN112305668A (en) * | 2020-10-21 | 2021-02-02 | 浙江大学 | Array waveguide grating with double-layer structure |
| CN112327409A (en) * | 2020-11-19 | 2021-02-05 | 西南交通大学 | Low-crosstalk silicon-based array waveguide grating |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1423140A (en) * | 2001-12-04 | 2003-06-11 | 中国科学院半导体研究所 | Integrated structure of array waveguide grating and optical fiber array and manufacture method thereof |
| US20030185512A1 (en) * | 2002-02-04 | 2003-10-02 | Katsunari Okamoto | Optical multiplexer and method for its production |
| CN101419313A (en) * | 2008-10-31 | 2009-04-29 | 武汉光迅科技股份有限公司 | Method for manufacturing afebrile array wave-guide grating based on flat-plate wave-guide movement |
-
2014
- 2014-12-19 CN CN201410795629.XA patent/CN104570200B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1423140A (en) * | 2001-12-04 | 2003-06-11 | 中国科学院半导体研究所 | Integrated structure of array waveguide grating and optical fiber array and manufacture method thereof |
| US20030185512A1 (en) * | 2002-02-04 | 2003-10-02 | Katsunari Okamoto | Optical multiplexer and method for its production |
| CN101419313A (en) * | 2008-10-31 | 2009-04-29 | 武汉光迅科技股份有限公司 | Method for manufacturing afebrile array wave-guide grating based on flat-plate wave-guide movement |
Non-Patent Citations (2)
| Title |
|---|
| NICK CVETOJEVIC ET AL.: "Developing arrayed waveguide grating spectrographs for multi-object astronomical spectroscopy", 《OPTICS EXPRESS》 * |
| 陈巧红等: "阵列波导光栅器件及应用", 《激光与光电子学进展》 * |
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| CN106443879A (en) * | 2016-10-21 | 2017-02-22 | 浙江工业大学 | Low crosstalk array waveguide grating |
| US11402267B2 (en) | 2018-11-02 | 2022-08-02 | Boe Technology Group Co., Ltd. | Light splitting device and method for manufacturing the same, method for dispersing light, and spectrometer |
| CN109239940A (en) * | 2018-11-02 | 2019-01-18 | 京东方科技集团股份有限公司 | A kind of light-dividing device and preparation method thereof, optical dispersion method and spectrometer |
| WO2020088642A1 (en) * | 2018-11-02 | 2020-05-07 | 京东方科技集团股份有限公司 | Spectroscopic device and manufacturing method therefor, and optical dispersion method and spectrograph |
| CN111323120A (en) * | 2018-12-17 | 2020-06-23 | 绍兴图聚光电科技有限公司 | High-resolution spectrometer based on etched diffraction grating |
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| CN112327409B (en) * | 2020-11-19 | 2021-09-07 | 西南交通大学 | Low-crosstalk silicon-based array waveguide grating |
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