CN104167473A - Epitaxial growing method of high-crystal-quality infrared light emitting diode - Google Patents
Epitaxial growing method of high-crystal-quality infrared light emitting diode Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 73
- 238000001816 cooling Methods 0.000 claims abstract description 53
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 29
- 230000007797 corrosion Effects 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 5
- 230000012010 growth Effects 0.000 claims description 223
- 230000007704 transition Effects 0.000 claims description 61
- 230000008859 change Effects 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 33
- 230000009466 transformation Effects 0.000 claims description 29
- 230000026267 regulation of growth Effects 0.000 claims description 7
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 abstract description 6
- 239000000470 constituent Substances 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract 5
- 230000005540 biological transmission Effects 0.000 abstract 2
- 230000007423 decrease Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
The invention discloses an epitaxial growing method of a high-crystal-quality infrared light emitting diode. The epitaxial growing method comprises the steps that a buffer layer, a corrosion cut-off layer, an ohmic contact layer and a current transmission layer grow on a substrate in an expitaxial mode in sequence; one minute after the current transmission layer stops growing, the pressure is reduced by 30 mbar, and a coarsening layer grows; a first type conducting layer grows on the coarsening layer in an epitaxial mode; a quantum barrier grows on the first type conducting layer; after epitaxy of the quantum barrier is finished, the growing flow of Al and Ga is changed, and the quantum barrier gradually extends to a constituent gradually-changing cooling layer composed of AlGaAs materials with the low Al constituent; an AlGaInAs quantum well layer grows in an epitaxial mode; epitaxial growing pauses, the temperature is increased to be equal to the growing temperature of the quantum barrier; the quantum barrier, the constituent gradually-changing cooling layer and a quantum well continue to grow in sequence; a second type conducting layer grows on an active layer in an epitaxial mode. The epitaxial growing method solves the technical problem that mismatching exists between the quantum well of the active area and the other epitaxial layers, and the luminous efficiency of the infrared light emitting diode is improved.
Description
Technical field
The present invention relates to infrarede emitting diode technical field, refer in particular to a kind of epitaxial growth method of high-crystal quality infrarede emitting diode.
Background technology
Infrarede emitting diode is low in energy consumption owing to having, size is little and high reliability, is widely used in the fields such as communication, sensoring.
In prior art, infrarede emitting diode mainly adopts the heterojunction of liquid phase epitaxial method growth as the infrarede emitting diode of active layer, and the defect of the infrared diode of growth by liquid phase epitaxy method is that internal quantum efficiency is lower, and power is restricted.
Along with more and more higher to the demand of infrarede emitting diode power, manufacturing Infrared High-Power light-emitting diode has become development trend.Adopt metal organic chemical compound vapor deposition method, epitaxial growth has the infrarede emitting diode of quantum well structure can obtain higher internal quantum efficiency.
There is defect in the infrarede emitting diode that adopts at present the making of metal organic chemical compound vapor deposition method to have inversion chip structure: one, quantum-well materials and other epitaxial film materials exist mismatch, when serious, can cause the crystal mass variation of active area; Two,, when the phosphide at extension initial stage is switched to arsenide growth, because phosphide is for containing In compound, interface, as untreated good, can cause the crystal mass variation of subsequently epitaxial growing.The existence of two kinds of factors affects the lifting of infrarede emitting diode quantum efficiency.Therefore, improve epitaxial crystal quality, become an approach that improves infrarede emitting diode luminous efficiency, this case produces thus.
Summary of the invention
The object of the present invention is to provide a kind of epitaxial growth method of high-crystal quality infrarede emitting diode, there is mismatch with the quantum well and other epitaxial loayer that solve active area, the poor technical problem of epitaxial loayer crystal mass causing, improves infrarede emitting diode luminous efficiency.
For reaching above-mentioned purpose, solution of the present invention is:
An epitaxial growth method for high-crystal quality infrarede emitting diode, comprises the following steps:
Step 1, on substrate successively epitaxial growth buffer, corrosion cutoff layer, ohmic contact layer and current delivery layer;
Step 2, current delivery layer growth finishes rear pause 1 minute, and chamber pressure reduces after 30mbar, adopts the ladder transformation mode roughened layer of growing;
Step 3, epitaxial growth the first type conductive layer on roughened layer;
Step 4, on the first type conductive layer, grown quantum is built, and quantum is built and is adopted the higher AlGaAs material of Al component;
Step 5, after quantum base extension finishes, without growth interruption, changes the growth flow of Al, Ga, is transitioned into the content gradually variational cooling layer that the lower AlGaAs material of Al component forms; In the time of growth components gradual change cooling layer, growth temperature is gradual change type and declines;
Adopt the mode of gradual change type growth to be transitioned into the AlGaAs material that Al component is lower, during for subsequent growth quantum well, do transition by directly opening the growth of In source.Due to the only infrared band that active layer is sent out, obtaining under same wave elongate member, the AlGaInAs material of employing, Al component is lower, and In content can be fewer, and match materials is better, and therefore adopting quantum well to adopt Al component to be less than 3% is more suitable scope.The thickness of content gradually variational cooling layer can not be too thick, if the precipitous degree at the partially thick potential barrier interface that can reduce quantum well and quantum base of thickness, thus the electronics that quantum is built, the restriction in hole reduced; But in the partially thin situation of thickness, when epitaxial growth because Al change of component also can affect crystal mass too soon.Therefore content gradually variational cooling layer adopts thickness range proper in 2-6nm interval.
Step 6, when content gradually variational cooling layer growth completes, temperature-fall period also completes, and the pause of growth nothing, directly epitaxial growth AlGaInAs quantum well layer; Employing can improve quantum without extension pause growth and build the growth interface between quantum well.
Step 7, after quantum trap growth finishes, suspends epitaxial growth, and reaction chamber temperature gos up, and temperature returns to identical with quantum base growth temperature.
Quantum is built and is adopted higher temperature growth can obtain good quality of materials, time out is unsuitable too short, when the too short meeting of time out causes having grown quantum well, on the growth interface of AlGaInAs material, In is not incorporated to completely, the length of time out, but also cannot be partially long mainly according to the speed heating up.
Step 8, continues successively that grown quantum is built, content gradually variational cooling layer and quantum well, make active layer by many groups quantum of alternating growth build, content gradually variational cooling layer, quantum well constitution;
Step 9, epitaxial growth Second-Type conductive layer on active layer.
Further, between active layer and the first type conductive layer, form the first temperature transition layer, and between active layer and Second-Type conductive layer, form the second temperature transition layer.The growth material of the first temperature transition layer is identical with the material of the first type conductive layer; The growth material of the second temperature transition layer is identical with the material of Second-Type conductive layer; The first temperature transition layer and the second temperature transition are made up of AlGaAs material.The first temperature transition layer of growing on the first type conductive layer, when growth the first temperature transition layer, temperature is gradual change type and declines, and on the first temperature transition layer, grown quantum is built; The second temperature transition layer of growing on active area, the growth temperature of the second temperature transition layer is gradual change type and rises, Temperature numerical when Temperature numerical returns to growth the first type conductive layer; Epitaxial growth Second-Type conductive layer on the second temperature transition layer.
Further, when growth the first temperature transition layer, the temperature range of maximum growth temperature and minimum growth temperature is 15-30 DEG C; While growing the second temperature transition layer, the temperature range of maximum growth temperature and minimum growth temperature is 15-30 DEG C.
The epitaxial growth temperature of the first temperature transition layer is gradual change type and declines, and cooling scope is 15-30 DEG C.Because quantum well material used is applicable to adopting lower temperature epitaxial growth, therefore introduce the first temperature transition layer and lower the temperature in advance, can avoid, because the cooling extent between quantum well and quantum base is bigger than normal, affecting the growth interface of quantum base and quantum well.
While growing the second temperature transition layer, temperature range is 15-30 DEG C, and the growth material of the second temperature transition layer with it material of adjacent Second-Type conductive layer is identical, and growth temperature relatively raises and is conducive to Second-Type conductive layer and obtains good crystal mass.
Further, the four layers of roughened layer of growing successively on current delivery layer, the roughened layer that ladder transformation mode is grown is divided into four layers, the roughened layer of growing under four layers of different pressures condition adopts same material and different thickness, detailed process is: when growth the first roughened layer, chamber pressure is than normal growth pressure decreased 30-60mbar; While growing the second roughened layer, chamber pressure, from being increased to than the low 20-40mbar of normal growth pressure than the low 30-60mbar of normal growth pressure, adopts transformation growth, and transformation numerical value is 10-20mbar; When growth regulation three roughened layer, chamber pressure, from being increased to than the low 10-20mbar of normal growth pressure than the low 20-40mbar of normal growth pressure, adopts transformation growth, and transformation numerical value is 10-20mbar; When growth regulation four roughened layer, chamber pressure, from being increased to normal growth pressure than the low 10-20mbar of normal growth pressure, adopts transformation growth, and transformation numerical value is 10-20mbar.
Normal growth pressure described herein refers to the growth pressure of quantum well homepitaxy layer, and scope is 70-100mbar.
Because current delivery layer is the phosphide material containing indium, epitaxial growth AlGaAs material on this, easily cause phosphide element to diffuse to AlGaAs material and cause growth interface variation, the described four layers of roughened layer of growing successively, four layers of roughened layer adopt different-thickness and press down change epitaxial growth technology in the condition of differential responses chamber pressure and effectively address this problem.
Roughened layer is made up of AlGaAs material.Wherein, the thickness of the first roughened layer is 10-50nm; The thickness of the second roughened layer is 100-150nm; The thickness of the 3rd roughened layer is 150-250nm; The thickness of the 4th roughened layer is 500-800nm.
Further, described content gradually variational cooling layer is made up of AlGaAs material, and the weight content of Al component is built to quantum well direction and reduced gradually by quantum.The content gradually variational cooling layer being made up of AlGaAs material, wherein the weight content of Al component is less than 3%.The thickness of content gradually variational cooling layer is 2-6nm.
The difference range of the epitaxial growth temperature of content gradually variational cooling layer is 10-40 DEG C.In the time of epitaxial growth content gradually variational cooling layer, growth temperature is gradual change type and declines, and cooling scope is in 10-40 DEG C of interval.Adopt the decline of growth temperature, to contain In element because form the AlGaInAs material of quantum well, under lower temperature conditions, growth can promote the incorporation efficiency of In source in the time that AlGaInAs material epitaxy grow, reduce In source too much be adsorbed on AlGaInAs Material growth face the growth interface deterioration suspending and cause.
Further, quantum well finishes after growth, and the time that epitaxial growth suspends is 2-5s.
A kind of high-crystal quality infrarede emitting diode forms successively resilient coating, corrosion cutoff layer, ohmic contact layer, current delivery layer, roughened layer, the first type conductive layer, active layer and Second-Type conductive layer on substrate; Active layer is made up of the quantum base of organizing, cooling layer and the circulation of quantum well three-decker more, and cooling layer is built between quantum well at quantum.
Further, the thickness of described cooling layer is 2-6nm.
Further, described cooling layer is content gradually variational cooling layer, and active principle is built to quantum well direction and reduced gradually by quantum.
Further, described content gradually variational cooling layer is made up of AlGaAs material, and the weight content of Al component is built to quantum well direction and reduced gradually by quantum.
Further, the described content gradually variational cooling layer being formed by AlGaAs material, wherein the weight content of Al component is less than 3%.
Further, described quantum is built and is made up of AlGaAs material, and wherein the weight content of Al component is greater than 30%.Al component has good electronics, hole confinement effect higher than 30%.
Further, between active layer and the first type conductive layer, form the first temperature transition layer, and between active layer and Second-Type conductive layer, form the second temperature transition layer.
Further, the growth material of the first temperature transition layer is identical with the material of the first type conductive layer; The growth material of the second temperature transition layer is identical with the material of Second-Type conductive layer; The first temperature transition layer and the second temperature transition are made up of AlGaAs material.
Further, described roughened layer the first roughened layer, the second roughened layer, the 3rd roughened layer and the 4th roughened layer form; Wherein, the thickness of the first roughened layer is 10-50nm; The thickness of the second roughened layer is 100-150nm; The thickness of the 3rd roughened layer is 150-250nm; The thickness of the 4th roughened layer is 500-800nm.
Further, described roughened layer is made up of AlGaAs material; Corrosion cutoff layer and current delivery layer are by (Al
xga
1-x)
0.5in
0.5p material forms, and 0≤x≤1.
Adopt after such scheme, active layer of the present invention is made up of the quantum base of organizing, cooling layer and the circulation of quantum well three-decker more, cooling layer is built between quantum well at quantum, there is mismatch in the quantum well and other epitaxial loayer that effectively solve active area, the poor technical problem of epitaxial loayer crystal mass causing, improves infrarede emitting diode luminous efficiency.
Simultaneously, between active layer and the first type conductive layer, form the first temperature transition layer, and between active layer and Second-Type conductive layer, form the second temperature transition layer, further solve the quantum well of active area and the growth excessive temperature differentials at base, the problem of the epitaxial loayer crystal mass variation causing, improves infrarede emitting diode luminous efficiency.
Described roughened layer is made up of the first roughened layer, the second roughened layer, the 3rd roughened layer and the 4th roughened layer, and the growth of solution phosphide is switched to arsenide growth and easily causes crystal mass decline technical problem.
The epitaxial growth method of described high-crystal quality infrarede emitting diode, solve growth active area because the quantum well constitution material and other epitaxial loayer that adopt exist mismatch, the epitaxial loayer crystal mass causing is poor, and cause the internal quantum efficiency of infrarede emitting diode not high, the problem larger with calculated value deviation.When growing in active area, adopt active layer by many groups quantum of alternating growth build, content gradually variational cooling layer, the epitaxial structure of quantum well constitution, growth temperature gradient, growth course control, growth interface homepitaxy growth technique, while having solved epitaxial growth, quantum base and quantum well, quantum well and quantum base are because material mismatch and growth interface worsen the problem of the epitaxial loayer crystal mass variation causing.By improving active area crystal mass, improve the interior quantum luminous efficiency of light-emitting diode, the internal quantum efficiency of infrarede emitting diode and theoretical value are approached.
The first temperature transition layer of growing on the first type conductive layer, the second temperature transition layer of growing on active area, while further having solved epitaxial growth, quantum base and quantum well, quantum well and quantum are built the problem of the epitaxial loayer crystal mass variation causing more greatly due to the growth temperature difference.
Meanwhile, by the four layers of roughened layer of growing successively on current delivery layer, four layers of roughened layer adopt different-thickness and press down change epitaxial growth in the condition of differential responses chamber pressure; The growth of solution phosphide is switched to arsenide growth and easily causes crystal mass decline technical problem, grow and be switched to the pause processing of arsenide growth employing interface, low pressure forming core and transformation growth by phosphide, improve the crystal mass of the arsenide of growing on phosphide.
Brief description of the drawings
Fig. 1 is the epitaxial structure schematic diagram of the embodiment of the present invention one;
Fig. 2 is that the growth pressure of the embodiment of the present invention one is with the change curve of growth thickness (growth time);
Fig. 3 is the temperature curve of the embodiment of the present invention one growth course and pause, material component situation of change schematic diagram;
Fig. 4 is the epitaxial growth reflectance curve sectional drawing that the epitaxial growth reflectance curve of the embodiment of the present invention one contrasts other growth technology;
Fig. 5 is the epitaxial structure schematic diagram of the growth of the embodiment of the present invention two;
Fig. 6 is that the growth pressure of the embodiment of the present invention two is with the change curve of growth thickness (growth time);
Fig. 7 is the temperature curve of the embodiment of the present invention two growth courses and pause, material component situation of change schematic diagram.
Label declaration
Substrate 1 resilient coating 2
Corrosion cutoff layer 3 ohmic contact layers 4
Current delivery layer 5 roughened layer 6
The first roughened layer 61 second roughened layers 62
The 3rd roughened layer 63 the 4th roughened layer 64
The first type conductive layer 7 first temperature transition layers 8
Active layer 9 quantum build 91
Content gradually variational cooling layer 92 quantum well 93
The second temperature transition layer 10 Second-Type conductive layer 11.
Embodiment
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Embodiment mono-
Consult shown in Fig. 1 to Fig. 4, a kind of high-crystal quality infrarede emitting diode that the present invention discloses, by substrate 1 to lower and on be followed successively by grown buffer layer 2, corrosion cutoff layer 3, ohmic contact layer 4, current delivery layer 5, roughened layer 6, the first type conductive layer 7, the first temperature transition layer 8, active layer 9, the second temperature transition layer 10 and Second-Type conductive layer 11.
Roughened layer 6 is made up of four parts, is respectively the first roughened layer 61, the second roughened layer 62, the 3rd roughened layer 63, the 4th roughened layer 64.
Active layer 9 is alternately made up of seven groups of quantum bases 91, content gradually variational cooling layer 92 and quantum well 93.
An epitaxial growth method for high-crystal quality infrarede emitting diode, concrete steps are as follows:
1, adopt chamber pressure 100mbar, under 650 DEG C of conditions of growth temperature, epitaxial growth buffer 2, corrosion cutoff layer 3, ohmic contact layer 4, current delivery layer 5 successively on GaAs substrate 1.Resilient coating 3, ohmic contact layer 4 adopt GaAs material; Corrosion cutoff layer 3 and current delivery layer 5 adopt Ga
0.5in
0.5p material, and 0≤x≤1.
2, after 5 growth of current delivery layer finish, growth interruption 1 minute and chamber pressure reduce 60mbar, then start the roughened layer 6 of growing, roughened layer 6 adopts AlGaAs material, and concrete growth pressure with the change curve of growth thickness (growth time) as shown in Figure 2.
3, roughened layer 6 adopts four layers of different-thickness and presses down change epitaxial growth in the condition of differential responses chamber pressure.
While growing the first roughened layer 61, adopt chamber pressure 40mbar, and epitaxial thickness is 50nm.
While growing the second roughened layer 62, chamber pressure adopts transformation growth, and chamber pressure improves 60mbar extension transformation growth 50nm from 40mbar; Chamber pressure is at 60mbar epitaxial growth 100nm.
While producing the 3rd roughened layer 63, chamber pressure adopts transformation growth, and chamber pressure improves 80mbar extension transformation growth 50nm from 60mbar; Chamber pressure is at 80mbar epitaxial growth 200nm.
Growth regulation four roughened layers 64, chamber pressure adopts transformation growth, and chamber pressure improves 100mbar extension transformation growth 50nm from 80mbar; Chamber pressure is at 100mbar epitaxial growth 500nm.
4, on roughened layer 6, epitaxial growth the first type conductive layer 7, the first type conductive layers 7 adopt AlGaAs material.
5, on the first type conductive layer 7, grow that the AlGaAs material of the first adjacent type conductive layer 7 is identical with it for the growth material of the first temperature transition layer 8, the first temperature transition layer 8.While growing the first temperature transition layer 9, temperature is gradual change type decline, and cooling extent is 20 DEG C.
6, on the first temperature transition layer 8, grown quantum builds 91, and quantum is built 91 material and adopt the AlGaAs material of high Al contents, and the Al component Al that is 40%
0.4ga
0.6as.
7, build after 91 extensions finish at quantum, without growth interruption, change the growth flow of Al, Ga, transit directly to low Al component material Al
0.02ga
0.98the content gradually variational cooling layer 92 of As.The Al component of content gradually variational cooling layer 92 constituent material is gradual change growth.The thickness of content gradually variational cooling layer 92 adopts 4nm.
8, in growth components gradual change cooling layer 92, growth temperature is the decline of gradual change type, and cooling size is 30 DEG C.
9, wait to have lowered the temperature and growth components gradual change cooling layer 92 just grow, without growth interruption, direct epitaxial growth Al
0.02ga
0.93in
0.05as quantum well 93 epitaxial loayers.
10, after quantum well 93 has been grown, suspend epitaxial growth, time out adopts 3s; And the reaction chamber temperature temperature level while base to grown quantum of ging up.
11, the quantum of 7 groups of extension alternating growths build 91, content gradually variational cooling layer 92 and quantum well 93, growth pause is also risen again, and the epitaxial growth technology of every group circulates as mentioned above.Specifically the temperature curve of growth course, pause, material component situation of change are as shown in Figure 3.
12, on active area 9, grow the second temperature transition layer 10, the second temperature transition layer 10 epitaxial temperature be gradual change type rise, temperature level returns to identical with the temperature of the first type conductive layer 7 of growing; While growing the second temperature transition layer 10, the temperature difference adopts 20 DEG C.The growth material of the second temperature transition layer 10 with it AlGaAs material of adjacent Second-Type conductive layer 11 is identical.
13, epitaxial growth Second-Type conductive layer 11 on the second temperature transition layer 10, Second-Type conductive layer 11 is made up of AlGaAs material.
As shown in Figure 4, top curve a is the reflectance curve figure that adopts the growth course of the epitaxy technique of above embodiment mono-to detect, lower curve b is the reflectance curve figure that the growth course of other epitaxy technique and method detects.The top curve a of comparison diagram 4 and lower curve b sectional drawing, the reflectivity that can obviously find out top curve a is stabilized in a certain numerical value always, and the reflectivity of lower curve b reflectivity in the time starting to grow active area, with regard to step-down, and has been grown numerical value behind active area and has obviously been declined gradually.Illustrate and adopt epitaxy technique of the present invention crystal mass after the active layer of having grown not have variation, and do not adopt epitaxy technique crystal mass in the time of growth active layer of the technology of the present invention to start variation, and the crystal mass variation of the epitaxial loayer of active layer and subsequent growth is more and more obvious.
Embodiment bis-
Embodiment bis-is with the difference of embodiment mono-: active layer 9 is alternately made up of six groups of quantum bases 91, content gradually variational cooling layer 92 and quantum well 93, and embodiment mono-is seven groups.
As shown in Figure 5, a kind of infrarede emitting diode, by substrate 1 to lower and on be followed successively by grown buffer layer 2, corrosion cutoff layer 3, ohmic contact layer 4, current delivery layer 5, roughened layer 6, the first type conductive layer 7, the first temperature transition layer 8, active layer 9, the second temperature transition layer 10, Second-Type conductive layer 11.
Roughened layer 6 is made up of four parts, is respectively the first roughened layer 61, the second roughened layer 62, the 3rd roughened layer 63, the 4th roughened layer 64; Active layer 9 is alternately made up of six groups of quantum bases 91, content gradually variational cooling layer 92 and quantum well 93.
An epitaxial growth method for high-crystal quality infrarede emitting diode, concrete steps are as follows:
1, adopt chamber pressure 70mbar, under 620 DEG C of conditions of growth temperature, epitaxial growth buffer 2, corrosion cutoff layer 3, ohmic contact layer 4, current delivery layer 5 successively on GaAs substrate 1.Resilient coating 2, ohmic contact layer 4 adopt GaAs material; Corrosion cutoff layer 3 and current delivery layer 5 adopt (Al
0.5ga
0.5)
0.5in
0.5p material.
2, after 5 growth of current delivery layer finish, growth interruption 1 minute and chamber pressure reduce 40mbar, then start the roughened layer 6 of growing, and roughened layer 6 adopts AlGaAs material.Concrete growth pressure with the change curve of growth thickness (growth time) as shown in Figure 6.
3, roughened layer 6 adopts four layers of different-thickness and presses down change epitaxial growth in the condition of differential responses chamber pressure.While growing the first roughened layer 61, adopt chamber pressure 30mbar, and epitaxial thickness is 40nm.While growing the second roughened layer 62, chamber pressure adopts transformation growth, and chamber pressure improves 40mbar extension transformation growth 30nm from 30mbar; Chamber pressure is at 40mbar epitaxial growth 70nm.Growth regulation three roughened layers 63 are, chamber pressure adopts transformation growth, and chamber pressure improves 50mbar extension transformation growth 30nm from 40mbar; Chamber pressure is at 50mbar epitaxial growth 170nm.When growth regulation four roughened layer 64, chamber pressure adopts transformation growth, and chamber pressure improves 70mbar extension transformation growth 60nm from 50mbar; Chamber pressure is at 70mbar epitaxial growth 700nm.
4, on roughened layer 6, epitaxial growth the first type conductive layer 7, the first type conductive layers 7 adopt AlGaAs material.
5, on the first type conductive layer 7, grow that the AlGaAs material of the first adjacent type conductive layer 7 is identical with it for the growth material of the first temperature transition layer 8, the first temperature transition layer 8.While growing the first temperature transition layer 8, temperature is gradual change type decline, and cooling extent is 25 DEG C.
6, on the first temperature transition layer 8, grown quantum builds 91, and quantum is built 91 material and adopt the AlGaAs material of high Al contents, and the Al component Al that is 35%
0.35ga
0.65as.
7, build after 91 extensions finish at quantum, without growth interruption, change the growth flow of Al, Ga, transit directly to low Al component material Al
0.03ga
0.97the content gradually variational cooling layer 92 of As.The Al component of content gradually variational cooling layer 92 constituent material is gradual change growth.The thickness of content gradually variational cooling layer 92 adopts 3nm.
8, in growth components gradual change cooling layer 92, growth temperature is the decline of gradual change type, and cooling size is 15 DEG C.
9, wait to have lowered the temperature and growth components gradual change cooling layer 92 just grow, without growth interruption, direct epitaxial growth Al
0.028ga
0.922in
0.05as quantum well 93 epitaxial loayers.
10, after quantum well 93 has been grown, suspend epitaxial growth, time out adopts 2s; And the reaction chamber temperature temperature level of building to grown quantum 91 o'clock of ging up.
11, the quantum of six groups of extension alternating growths build 91, content gradually variational cooling layer 92 and quantum well 93, growth pause is also risen again, and the epitaxial growth technology of every group circulates as mentioned above.Specifically the temperature curve of growth course, pause, material component situation of change are as shown in Figure 7.
12, on active area 9, grow the second temperature transition layer 10, the second temperature transition layer 10 epitaxial temperature be gradual change type rise, temperature level returns to identical with the temperature of the first type conductive layer 7 of growing; While growing the second temperature transition layer 10, the temperature difference adopts 20 DEG C.The growth material of the second temperature transition layer 10 with it AlGaAs material of adjacent Second-Type conductive layer 11 is identical.
13, epitaxial growth Second-Type conductive layer 11 on the second temperature transition layer 10, Second-Type conductive layer 11 is made up of AlGaAs material.
The foregoing is only preferred embodiment of the present invention, the not restriction to this case design, all equivalent variations of doing according to the design key of this case, all fall into the protection range of this case.
Claims (6)
1. an epitaxial growth method for high-crystal quality infrarede emitting diode, is characterized in that, comprises the following steps:
Step 1, on substrate successively epitaxial growth buffer, corrosion cutoff layer, ohmic contact layer and current delivery layer;
Step 2, current delivery layer growth finishes rear pause 1 minute, reduces after 30mbar at chamber pressure, adopts the ladder transformation mode roughened layer of growing;
Step 3, epitaxial growth the first type conductive layer on roughened layer;
Step 4, on the first type conductive layer, grown quantum is built, and quantum is built and is adopted the higher AlGaAs material of Al component;
Step 5, after quantum base extension finishes, without growth interruption, changes the growth flow of Al, Ga, is transitioned into the content gradually variational cooling layer that the lower AlGaAs material of Al component forms; In the time of growth components gradual change cooling layer, growth temperature is gradual change type and declines;
Step 6, when content gradually variational cooling layer growth completes, temperature-fall period also completes, and the pause of growth nothing, directly epitaxial growth AlGaInAs quantum well layer;
Step 7, after quantum trap growth finishes, suspends epitaxial growth, and reaction chamber temperature gos up, and temperature returns to identical with quantum base growth temperature;
Step 8, continues successively that grown quantum is built, content gradually variational cooling layer and quantum well, make active layer by many groups quantum of alternating growth build, content gradually variational cooling layer, quantum well constitution;
Step 9, epitaxial growth Second-Type conductive layer on active layer.
2. the epitaxial growth method of a kind of high-crystal quality infrarede emitting diode as claimed in claim 1, it is characterized in that, the first temperature transition layer of growing on the first type conductive layer, when growth the first temperature transition layer, temperature is gradual change type and declines, and on the first temperature transition layer, grown quantum is built; The second temperature transition layer of growing on active area, the growth temperature of the second temperature transition layer is gradual change type and rises, Temperature numerical when Temperature numerical returns to growth the first type conductive layer; Epitaxial growth Second-Type conductive layer on the second temperature transition layer.
3. the epitaxial growth method of a kind of high-crystal quality infrarede emitting diode as claimed in claim 2, is characterized in that, when growth the first temperature transition layer, the temperature range of maximum growth temperature and minimum growth temperature is 15-30 DEG C; While growing the second temperature transition layer, the temperature range of maximum growth temperature and minimum growth temperature is 15-30 DEG C.
4. the epitaxial growth method of a kind of high-crystal quality infrarede emitting diode as claimed in claim 1, it is characterized in that, the roughened layer that ladder transformation mode is grown is divided into four layers, the roughened layer of growing under four layers of different pressures condition adopts same material and different thickness, detailed process is: when growth the first roughened layer, chamber pressure is than normal growth pressure decreased 30-60mbar; While growing the second roughened layer, chamber pressure, from being increased to than the low 20-40mbar of normal growth pressure than the low 30-60mbar of normal growth pressure, adopts transformation growth, and transformation numerical value is 10-20mbar; When growth regulation three roughened layer, chamber pressure, from being increased to than the low 10-20mbar of normal growth pressure than the low 20-40mbar of normal growth pressure, adopts transformation growth, and transformation numerical value is 10-20mbar; When growth regulation four roughened layer, chamber pressure, from being increased to normal growth pressure than the low 10-20mbar of normal growth pressure, adopts transformation growth, and transformation numerical value is 10-20mbar.
5. the epitaxial growth method of a kind of high-crystal quality infrarede emitting diode as claimed in claim 1, is characterized in that, the difference range of the epitaxial growth temperature of content gradually variational cooling layer is 10-40 DEG C.
6. the epitaxial growth method of a kind of high-crystal quality infrarede emitting diode as claimed in claim 1, is characterized in that, quantum well finishes after growth, and the time that epitaxial growth suspends is 2-5s.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617194A (en) * | 2015-02-03 | 2015-05-13 | 映瑞光电科技(上海)有限公司 | Preparation method of GaN-based LED epitaxial structure |
| CN105226148A (en) * | 2015-10-22 | 2016-01-06 | 山东浪潮华光光电子股份有限公司 | A kind of quantum well region growth technique promoting LED product yield |
| CN107316931A (en) * | 2017-07-06 | 2017-11-03 | 山东浪潮华光光电子股份有限公司 | The flip LED epitaxial wafer and its manufacture method of a kind of GaAs bases roughening Rotating fields |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101207172A (en) * | 2007-11-30 | 2008-06-25 | 厦门三安电子有限公司 | Inverted trapezoidal microstructure high-brightness light-emitting diode and manufacturing method thereof |
| CN102208507A (en) * | 2011-05-03 | 2011-10-05 | 映瑞光电科技(上海)有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
| US20120236891A1 (en) * | 2011-03-17 | 2012-09-20 | Finisar Corporation | Lasers with quantum wells having high indium and low aluminum with barrier layers having high aluminum and low indium with reduced traps |
-
2014
- 2014-08-11 CN CN201410391548.3A patent/CN104167473B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101207172A (en) * | 2007-11-30 | 2008-06-25 | 厦门三安电子有限公司 | Inverted trapezoidal microstructure high-brightness light-emitting diode and manufacturing method thereof |
| US20120236891A1 (en) * | 2011-03-17 | 2012-09-20 | Finisar Corporation | Lasers with quantum wells having high indium and low aluminum with barrier layers having high aluminum and low indium with reduced traps |
| CN102208507A (en) * | 2011-05-03 | 2011-10-05 | 映瑞光电科技(上海)有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617194A (en) * | 2015-02-03 | 2015-05-13 | 映瑞光电科技(上海)有限公司 | Preparation method of GaN-based LED epitaxial structure |
| CN104617194B (en) * | 2015-02-03 | 2018-12-11 | 映瑞光电科技(上海)有限公司 | The preparation method of GaN base LED epitaxial structure |
| CN105226148A (en) * | 2015-10-22 | 2016-01-06 | 山东浪潮华光光电子股份有限公司 | A kind of quantum well region growth technique promoting LED product yield |
| CN107316931A (en) * | 2017-07-06 | 2017-11-03 | 山东浪潮华光光电子股份有限公司 | The flip LED epitaxial wafer and its manufacture method of a kind of GaAs bases roughening Rotating fields |
| CN107316931B (en) * | 2017-07-06 | 2019-05-07 | 山东浪潮华光光电子股份有限公司 | A kind of the flip LED epitaxial wafer and its manufacturing method of GaAs base roughened layer structure |
| CN110071210A (en) * | 2019-04-15 | 2019-07-30 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
| CN110071210B (en) * | 2019-04-15 | 2020-10-23 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
| CN114447164A (en) * | 2022-04-08 | 2022-05-06 | 南昌凯迅光电股份有限公司 | Positive polarity LED with gradual change structure and preparation method thereof |
| CN114447164B (en) * | 2022-04-08 | 2022-07-19 | 南昌凯迅光电股份有限公司 | Positive polarity LED with gradual change structure and preparation method thereof |
| WO2023226303A1 (en) * | 2022-05-27 | 2023-11-30 | 重庆康佳光电技术研究院有限公司 | Light emitting chip epitaxial structure and manufacturing method therefor, light emitting chip and display panel |
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