CN104103595A - Pop封装方法 - Google Patents
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Abstract
本发明提供一种POP封装方法,包括制作上封装体、制作下封装体,将所述上封装体和所述下封装体对接,制作所述下封装体包括步骤:提供一基板,在所述基板的上表面形成焊球,且倒装并回流焊接芯片;提供一金属板条,对所述金属板条进行光刻和/或腐蚀,在金属板条的一侧形成金属凸点;将金属板条具有所述金属凸点的一侧向下对着基板,与焊球进行回流焊接形成一体;在所述基板上形成塑封料层;去除所述金属板条顶部材料,直至所述金属凸点露出所述塑封料层。本发明提供的POP封装方法,通过使用成本较低的金属板条经过腐蚀和打磨等工艺形成金属凸点,而达到承上启下电连接的目的,在减少塑封料层翘曲的同时,提高了电连接的效率并且降低了成本。
Description
技术领域
本发明涉及一种半导体封装方法,尤其涉及一种POP封装方法。
背景技术
作为目前封装高密集成的主要方式,PoP(package on package,叠层封装)得到越来越多的重视。在POP结构中,记忆芯片通常以键合方式连接于基板,而应用处理器芯片以倒装方式连接于基板,记忆芯片封装体是直接叠在应用处理器封装体上,相互往往以锡球焊接连接。这样上下结构以减少两个芯片的互连距离来达到节省空间和获得较好的信号完整性。由于记忆芯片与逻辑芯片的连接趋于更高密度,整体厚度越来越薄,传统封装的POP结构已经很有局限。封装体翘曲是其中一直要考虑解决的问题,目前上下塑封料层的适当选材和设计是解决此问题的主要方法之一,但是此中上下塑封料层的电连接是个棘手问题。
发明内容
在下文中给出关于本发明的简要概述,以便提供关于本发明的某些方面的基本理解。应当理解,这个概述并不是关于本发明的穷举性概述。它并不是意图确定本发明的关键或重要部分,也不是意图限定本发明的范围。其目的仅仅是以简化的形式给出某些概念,以此作为稍后论述的更详细描述的前序。
本发明提供一种POP封装方法,包括制作上封装体、制作下封装体,将所述上封装体和所述下封装体对接,其特征在于,制作所述下封装体包括步骤:
S101:提供一基板,在所述基板的上表面形成第一焊球,且倒装并回流焊接芯片,所述芯片和基板通过底部填充技术进行加固;
S102:提供一金属板条,对所述金属板条进行光刻和/或腐蚀,在所述金属板条的一侧形成金属凸点;
S103:将所述金属板条具有所述金属凸点的一侧向下对着基板,并与所述基板上所述第一焊球进行回流焊接形成一体;
S104:在所述基板上形成塑封料层,所述塑封料层包覆所述芯片、第一焊球及金属凸点;
S105:去除所述金属板条顶部材料,直至所述金属凸点露出所述塑封料层。
本发明提供的POP封装方法,不需要经过钻孔、打磨塑封料等机械方法以达到电连接的目的,通过使用成本较低的金属板条经过腐蚀和打磨等工艺形成金属凸点,而达到承上启下电连接的目的,在减少塑封料层翘曲的同时,提高了电连接的效率并且降低了成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明中POP封装步骤流程图;
图2为本发明POP封装方法中芯片和基板结构示意图;
图3为本发明实施例一中金属板条结构示意图;
图4为本发明实施例一中金属板条与第一焊球连接结构示意图;
图5为本发明实施例一中对芯片和第一焊球进行塑封结构示意图;
图6为本发明实施例一中对金属板条进行打磨后结构示意图;
图7为本发明实施例一中POP封装结构最终示意图;
图8为本发明实施例二中金属板条结构示意图;
图9为本发明实施例二中金属板条与第一焊球连接结构示意图;
图10为本发明实施例二中对芯片和第一焊球进行塑封结构示意图;
图11为本发明实施例二中对金属板条进行打磨后结构示意图;
图12为本发明实施例二中覆盖保护层结构示意图;
图13为本发明实施例二中POP封装结构最终示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。在本发明的一个附图或一种实施方式中描述的元素和特征可以与一个或更多个其它附图或实施方式中示出的元素和特征相结合。应当注意,为了清楚的目的,附图和说明中省略了与本发明无关的、本领域普通技术人员已知的部件和处理的表示和描述。基于本发明中的实施例,本领域普通技术人员在没有付出创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明提供了一种POP封装方法,包括制作上封装体、制作下封装体,将所述上封装体和所述下封装体对接,如图1所示为制作所述下封装体的步骤,包括:S101:提供一基板,在所述基板的上表面形成第一焊球,且倒装并回流焊接芯片,所述芯片和基板通过底部填充技术进行加固;
S102:提供一金属板条,对所述金属板条进行光刻和/或腐蚀,在所述金属板条的一侧形成金属凸点;
S103:将所述金属板条具有所述金属凸点的一侧向下对着基板,并与所述基板上所述第一焊球进行回流焊接形成一体;
S104:在所述基板上形成塑封料层,所述塑封料层包覆所述芯片、第一焊球及金属凸点;
S105:去除所述金属板条顶部材料,直至所述金属凸点露出所述塑封料层。
本发明所提供的POP封装方法不需要通过钻孔、打磨塑封料等机械方法以达到电连接的目的,通过使用成本较低的金属板条经过腐蚀或者打磨等工艺形成金属凸点,而达到承上启下电连接的目的,在减少塑封料层翘曲的同时,提高了电连接的效率并且降低了成本。
可选的,所述芯片和基板之间的空隙通过毛细底部填充技术或者模塑底部填充技术填充并固化。所述毛细底部填充技术和模塑底部填充技术是底部填充技术的一类,通过采用底部填充可以分散芯片表面承受的应力进而提高了整个产品的可靠性。在进行毛细底部填充或者模塑底部填充和固化之后在进行塑封,将整体封住。
可选的,所述金属板条的材料为具有良好的导电性的材料,可以为但不限于铜合金。所述金属板条在进行光刻和/或腐蚀的时候,形成的图案会有所不同,如图3和图8所示,图3形成金属凸点,图8形成金属凸点和绕线,以下介绍两种实施例,分别对图3形成金属凸点和图8形成金属凸点和绕线两种情况进行描述。
实施例一:
如图2所示,首先提供一个基板11,在所述基板11的上表面倒装放置有芯片13,并且通过回流焊接技术将所述芯片13焊接在所述基板上,所述芯片13和基板11通过底部填充技术进行加固,其中底部填充可以选用模塑底部填充技术或者毛细底部填充技术。
可选的,在下个步骤之前在所述基板11的上表面形成第一焊球12或者提供的所述基板表面设置有第一焊球;基板上表面的第一焊球用于与上封装体连接,实现上封装体和下封装体之间的电互连,其中基板上表面的第一焊球12可以在芯片封装好后焊接在基板上表面,也可以在制作基板的时候在基板表面直接设置好第一焊球,以便接下来的步骤更快速的进行。
如图3所示,再提供一个金属板条,对所述的金属板条进行光刻和/或腐蚀,在金属板条21的一侧形成金属凸点,形成图3所示的结构。
如图4所示,将金属板条21具有凸点的一侧向下对着基板,所述金属凸点与基板上表面形成的第一焊球对齐,进行回流焊接形成一体;
如图5所示,在所述基板上形成塑封料层,所述塑封料层包覆所述芯片13、第一焊球12及金属凸点;本实施例也包括所述芯片的上表面露出所述塑封料层的情况。
接下来,对所述金属板条进行打磨和/或腐蚀,去除金属板条顶部的材料,直至所述金属凸点露出所述塑封料层,形成图6所示的结构,保留的金属凸点部分为连接上封装体的中介部分,通过随后的回流焊接将上封装体和下封装体连接起来;在对所述金属板条进行打磨的时候还需要在所述基板下表面形成第二焊球。
所述上封装体背面设置有第三焊球,随后将上封装体16背面的第三焊球与下封装体的金属凸点对齐进行回流焊接形成一体,最终形成如图7所示的结构,在本发明中,所述上封装体的封装形式为球栅阵列封装,可以为任何球栅阵列的封装结构。本发明主要展现的是用在移动设备芯片封装中的上层是芯片正装的键合连接的普通情况,但是也不局限与此结构在移动设备的芯片封装应用上;并且本专利中的焊球和框架材料为常用的任何材料。
实施例二:
如图2所示,与实施例一相同,首先提供一个基板11,在所述基板11的上表面倒装放置有芯片13,并且通过回流焊接技术将所述芯片13焊接在所述基板上,所述芯片13和基板11通过底部填充技术进行加固,其中底部填充可以选用模塑底部填充技术或者毛细底部填充技术;所述基板上表面的第一焊球可以在提供基板的时候就设置好,或者可以在芯片焊接好后再在所述基板的上表面设置第一焊球。
随后,提供一金属板条31,对所述金属板条进行光刻和/或腐蚀形成如图8所示的形状,在金属板条的一侧形成金属凸点,并且在形成金属凸点的一侧还形成绕线。
将金属板条有凸点和绕线的一侧向下对着基板,所述金属凸点和基板上表面的第一焊球对齐进行回流焊接,形成如图9所示的结构。
接着在基板上表面形成塑封料层,所述塑封料层包覆所述金属凸点、基板上表面的第一焊球、芯片和绕线,形成如图10所示的结构。
与实施例一类似,接下来去除所述金属板条顶部的材料,直至所述金属凸点22和绕线23露出所述塑封料层,并且在所述基板下表面还行成第二焊球,其结构如图11所示。
可选的,接着在所述绕线上表面覆盖保护层15,如图12所示,所述保护层在所述金属凸点处开口,并暴露出所述金属凸点;所述保护层为有机或者无机的氧化膜,对塑封料层和绕线进行保护,并且在金属凸点的位置开口,以便于金属凸点和上封装体下表面的第三焊球的连接。
如图13所示为在塑封料层表面覆盖保护层后,上封装体和下封装体相互连接的结构图,连接方式与不增加保护层相同,结构也相似,增加的保护层对塑封料层和绕线进行了保护,相对的厚度没有增加多少,同样做到了减小体积。
本发明中的POP结构中上封装体可以为球栅阵列的任何封装形式,并且所述的封装方法适用于大部分的焊球材料和框架材料情况,但是框架材料尽量选用上述提到的具有良好导电性的材料。
本实施例中的芯片被完全包覆在塑封料层内部,在实际生产过程中,本发明所述的方法仍适用于芯片没有被完全包覆在塑封料层内部的情况;同时本方案提出的叠层封装为上下两个封装体的连接,所述上封装体上表面还可以设有一个或者多个封装体,封装体的个数根据实际应用的需要决定。
最后应说明的是:虽然以上已经详细说明了本发明及其优点,但是应当理解在不超出由所附的权利要求所限定的本发明的精神和范围的情况下可以进行各种改变、替代和变换。而且,本发明的范围不仅限于说明书所描述的过程、设备、手段、方法和步骤的具体实施例。本领域内的普通技术人员从本发明的公开内容将容易理解,根据本发明可以使用执行与在此所述的相应实施例基本相同的功能或者获得与其基本相同的结果的、现有和将来要被开发的过程、设备、手段、方法或者步骤。因此,所附的权利要求旨在在它们的范围内包括这样的过程、设备、手段、方法或者步骤。
Claims (9)
1.一种POP封装方法,包括制作上封装体、制作下封装体,将所述上封装体和所述下封装体对接,其特征在于,制作所述下封装体包括步骤:
S101:提供一基板,在所述基板的上表面形成第一焊球,且倒装并回流焊接芯片,所述芯片和基板通过底部填充技术进行加固;
S102:提供一金属板条,对所述金属板条进行光刻和/或腐蚀,在所述金属板条的一侧形成金属凸点;
S103:将所述金属板条具有所述金属凸点的一侧向下对着基板,并与所述基板上的所述第一焊球进行回流焊接形成一体;
S104:在所述基板上形成塑封料层,所述塑封料层包覆所述芯片、第一焊球及金属凸点;
S105:去除所述金属板条顶部材料,直至所述金属凸点露出所述塑封料层。
2.根据权利要求1所述的POP封装方法,其特征在于,所述芯片和基板之间的空隙通过毛细底部填充技术或者模塑底部填充技术填充并固化。
3.根据权利要求1所述的POP封装方法,其特征在于,所述金属板条材料为铜合金。
4.根据权利要求1所述的POP封装方法,其特征在于,步骤S102中所述金属板条形成金属凸点的一侧还形成绕线。
5.根据权利要求1-4任一项所述的POP封装方法,其特征在于,所述塑封料层包覆所述芯片、第一焊球、金属凸点和绕线。
6.根据权利要求4所述的POP封装方法,其特征在于,所述步骤S105后还包括在绕线上表面覆盖保护层,所述保护层在金属凸点处开口并暴露所述金属凸点。
7.根据权利要求1-4任一项所述的POP封装方法,其特征在于,还包括步骤:在所述基板的下表面形成第二焊球。
8.根据权利要求1-4任一项所述的POP封装方法,其特征在于,所述上封装体背面设置有第三焊球,还包括将所述上封装体背面的第三焊球与下封装体的金属凸点对齐进行回流焊接形成一体。
9.根据权利要求1-4任一项所述的POP封装方法,其特征在于,所述上封装体的封装形式为球栅阵列封装。
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CN105428254A (zh) * | 2015-12-23 | 2016-03-23 | 南通富士通微电子股份有限公司 | 叠层封装方法 |
CN108878391A (zh) * | 2018-06-07 | 2018-11-23 | 珠海格力电器股份有限公司 | 智能功率模块结构及其制造方法 |
CN112820651A (zh) * | 2020-12-30 | 2021-05-18 | 苏州通富超威半导体有限公司 | 封装体上功能凸点的设置方法及封装体的制备方法 |
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CN105428254A (zh) * | 2015-12-23 | 2016-03-23 | 南通富士通微电子股份有限公司 | 叠层封装方法 |
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CN112820651A (zh) * | 2020-12-30 | 2021-05-18 | 苏州通富超威半导体有限公司 | 封装体上功能凸点的设置方法及封装体的制备方法 |
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