CN104037132A - 一种封装方法 - Google Patents
一种封装方法 Download PDFInfo
- Publication number
- CN104037132A CN104037132A CN201410287694.1A CN201410287694A CN104037132A CN 104037132 A CN104037132 A CN 104037132A CN 201410287694 A CN201410287694 A CN 201410287694A CN 104037132 A CN104037132 A CN 104037132A
- Authority
- CN
- China
- Prior art keywords
- crystal grain
- single crystal
- thickness
- substrate
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000013078 crystal Substances 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 27
- 238000012856 packing Methods 0.000 claims description 17
- 239000003292 glue Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 description 8
- 238000012536 packaging technology Methods 0.000 description 8
- 239000004033 plastic Substances 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 241000196324 Embryophyta Species 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 238000011900 installation process Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410287694.1A CN104037132B (zh) | 2014-06-25 | 2014-06-25 | 一种封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410287694.1A CN104037132B (zh) | 2014-06-25 | 2014-06-25 | 一种封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104037132A true CN104037132A (zh) | 2014-09-10 |
CN104037132B CN104037132B (zh) | 2017-02-15 |
Family
ID=51467852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410287694.1A Active CN104037132B (zh) | 2014-06-25 | 2014-06-25 | 一种封装方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104037132B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022052210A1 (zh) * | 2020-09-10 | 2022-03-17 | 安徽龙芯微科技有限公司 | 一种封装结构的制作方法 |
CN114335301A (zh) * | 2021-12-31 | 2022-04-12 | 佛山市国星光电股份有限公司 | 一种器件加工方法及器件 |
WO2023246612A1 (zh) * | 2022-06-20 | 2023-12-28 | 四川智翔翼科技有限公司 | 一种超薄型芯片制造封装方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1655353A (zh) * | 2004-02-13 | 2005-08-17 | 株式会社东芝 | 叠层mcp及其制造方法 |
EP2015356A1 (en) * | 2007-07-13 | 2009-01-14 | PVA TePla AG | Method for singulation of wafers |
US20120223441A1 (en) * | 2011-03-04 | 2012-09-06 | Kabushiki Kaisha Toshiba | Stacked semiconductor device and manufacturing method thereof |
WO2013019499A2 (en) * | 2011-07-29 | 2013-02-07 | Henkel Corporation | Dicing before grinding after coating |
-
2014
- 2014-06-25 CN CN201410287694.1A patent/CN104037132B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1655353A (zh) * | 2004-02-13 | 2005-08-17 | 株式会社东芝 | 叠层mcp及其制造方法 |
EP2015356A1 (en) * | 2007-07-13 | 2009-01-14 | PVA TePla AG | Method for singulation of wafers |
US20120223441A1 (en) * | 2011-03-04 | 2012-09-06 | Kabushiki Kaisha Toshiba | Stacked semiconductor device and manufacturing method thereof |
WO2013019499A2 (en) * | 2011-07-29 | 2013-02-07 | Henkel Corporation | Dicing before grinding after coating |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022052210A1 (zh) * | 2020-09-10 | 2022-03-17 | 安徽龙芯微科技有限公司 | 一种封装结构的制作方法 |
CN114335301A (zh) * | 2021-12-31 | 2022-04-12 | 佛山市国星光电股份有限公司 | 一种器件加工方法及器件 |
WO2023246612A1 (zh) * | 2022-06-20 | 2023-12-28 | 四川智翔翼科技有限公司 | 一种超薄型芯片制造封装方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104037132B (zh) | 2017-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181126 Address after: 233010 Pioneering Building 316, Huineng Small and Micro Enterprises Pioneering Center, 1750 Shengli West Road, Yuhui District, Bengbu City, Anhui Province Patentee after: Bengbu Dingrong Science and Technology Information Consulting Co., Ltd. Address before: 250101 two, B block, Qilu Software Park, 1768 Xinjie street, Ji'nan new and high tech Zone, Shandong. Patentee before: Shandong Sinochip Semiconductors Co., Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190307 Address after: 518000 Hongfa Science and Technology Industrial Park, Tangtou Community, Shiyan Street, Baoan District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Jingkai Electronics Technology Co., Ltd. Address before: 233010 Pioneering Building 316, Huineng Small and Micro Enterprises Pioneering Center, 1750 Shengli West Road, Yuhui District, Bengbu City, Anhui Province Patentee before: Bengbu Dingrong Science and Technology Information Consulting Co., Ltd. |