CN103700725B - 一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法 - Google Patents
一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法 Download PDFInfo
- Publication number
- CN103700725B CN103700725B CN201310733812.2A CN201310733812A CN103700725B CN 103700725 B CN103700725 B CN 103700725B CN 201310733812 A CN201310733812 A CN 201310733812A CN 103700725 B CN103700725 B CN 103700725B
- Authority
- CN
- China
- Prior art keywords
- copper indium
- absorbed layer
- solution
- selenium
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- QXKUQUSBOISHGH-UHFFFAOYSA-N [Se].[S].[In].[Cu] Chemical compound [Se].[S].[In].[Cu] QXKUQUSBOISHGH-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 41
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000010408 film Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 27
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 24
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 21
- 239000011701 zinc Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 239000000243 solution Substances 0.000 claims description 46
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 31
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 claims description 27
- 239000008367 deionised water Substances 0.000 claims description 27
- 229910021641 deionized water Inorganic materials 0.000 claims description 27
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 24
- 239000002243 precursor Substances 0.000 claims description 23
- 238000004140 cleaning Methods 0.000 claims description 22
- IGUXCTSQIGAGSV-UHFFFAOYSA-K indium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[In+3] IGUXCTSQIGAGSV-UHFFFAOYSA-K 0.000 claims description 22
- 229910052786 argon Inorganic materials 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 239000005361 soda-lime glass Substances 0.000 claims description 18
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 claims description 17
- 239000011259 mixed solution Substances 0.000 claims description 17
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 16
- 238000005406 washing Methods 0.000 claims description 15
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 14
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 14
- 229940112669 cuprous oxide Drugs 0.000 claims description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 claims description 13
- 229910000331 cadmium sulfate Inorganic materials 0.000 claims description 13
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052793 cadmium Inorganic materials 0.000 claims description 10
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000012065 filter cake Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 239000013049 sediment Substances 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 10
- 238000002604 ultrasonography Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 8
- -1 during deposition Substances 0.000 claims description 8
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 5
- QGJOPFRUJISHPQ-NJFSPNSNSA-N carbon disulfide-14c Chemical compound S=[14C]=S QGJOPFRUJISHPQ-NJFSPNSNSA-N 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000006193 liquid solution Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 238000000967 suction filtration Methods 0.000 claims description 5
- 229960001296 zinc oxide Drugs 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 239000005357 flat glass Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 6
- KVXKIRARVMGHKF-UHFFFAOYSA-G indium(3+);tin(4+);heptahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[In+3].[Sn+4] KVXKIRARVMGHKF-UHFFFAOYSA-G 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000928 Yellow copper Inorganic materials 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 229940065287 selenium compound Drugs 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000750 constant-initial-state spectroscopy Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000008236 heating water Substances 0.000 description 1
- 231100000086 high toxicity Toxicity 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法,采用磁控溅射法,在衬底的一侧沉积钼金属层作为背电极,在钼金属层背电极上制备铜铟硫吸收层,将铜铟硫吸收层衬底在硒化炉中进行硒化处理,制得铜铟硫硒吸收层;在铜铟硫硒吸收层上依次制备CdS缓冲层、本征氧化锌高阻层、氧化铟锡薄膜低阻抗层,制得用于太阳能电池的铜铟硫硒薄膜。优点是:选用的原料安全环保,操作方法简便,不引入其它杂质,太阳能电池转换效率高;并且对设备要求低,能源消耗小,对环境友好,适合工业化生产。
Description
技术领域
本发明属于太阳能电池领域,特别涉及一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法。
背景技术
太阳能电池是通过光化学效应直接把光能转化成电能的装置。太阳能电池的第三代产品-化合物薄膜太阳能电池有两个明显的优点:一是光电转换层很薄,只有几微米;二是薄膜太阳能电池吸收层带隙可以通过调整化合物的比例来控制,从而进一步扩大可吸收的太阳光波长范围。
铜铟硫硒化合物(CuInSxSe2-x,CISS)具有黄铜矿结构,是一种直接带隙材料(其带隙理论上可控制在1.02eV~1.55eV范围内),可吸收的太阳光波长范围较广,是一种优良的太阳能电池吸收层材料。
目前,制备薄膜铜铟硫硒化合物太阳能电池的方法主要有真空法和非真空法两大类。由于非真空法与真空法相比具有操作工艺简单,生产成本低廉,因此成为薄膜太阳能电池研究普遍使用的方法。非真空法制备铜铟硫系列薄膜太阳能电池一般采用肼溶剂法和纳米粒子旋涂法。肼溶剂法是以肼胺作为溶剂,该方法制作工艺简单,对反应条件要求较低,但肼胺高昂的价格以及高毒性限制了其工业化生产;纳米粒子旋涂法是采用合适的无机胶状纳米晶墨水用于可伸缩的旋涂工艺,再进一步通过旋涂、印刷等方法制备薄膜太阳能电池。但是该方法在纳米晶溶液层中有碳残留物,从而影响太阳能电池转换效率。
发明内容
本发明要解决的技术问题是提供一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法,该方法不易引入其它杂质,太阳能电池转换效率高,对环境友好。
本发明的技术解决方案是:
一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法,其具体步骤如下:
一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法,其具体步骤如下:
1.1、在衬底上制备钼金属背电极
用厚度为1mm的钠钙玻璃片作为衬底,经过清洗后,采用磁控溅射法,在衬底的一侧沉积厚度为1μm~1.5μm的钼金属层作为背电极;其中,溅射腔的真空度为1.0×10-3Pa~1.0×10-4Pa,通入纯度为99.99%的氩气作为反应气体,沉积时气压控制在0.5Pa~2.5Pa,衬底温度为200℃~300℃,溅射功率为100W~200W;
1.2、在钼金属背电极上制备铜铟硫吸收层
1.2.1、配制金属盐前驱体溶液
将氢氧化铟、氧化亚铜、二硫化碳和一正丁胺混合并在超声条件下溶解,抽滤得到滤饼,将滤饼加入到有机溶剂中配制成金属盐前驱体溶液;所述氢氧化铟与氧化亚铜的摩尔比为1:0.5~1:0.9,所述氢氧化铟与一正丁胺的摩尔体积比为1:0.8mmol/mL~1:1.5mmol/mL,所述氢氧化铟与二硫化碳摩尔体积比为1:0.5mmol/mL~1:1mmol/mL,所述氢氧化铟与有机溶剂的摩尔体积比为1:0.8mmol/mL~1:1mmol/mL;其中,有机溶剂为甲醇、乙醇或氯仿;
1.2.2、制备CuInS2纳米晶
将氢氧化铟、氧化亚铜和一正丁胺混合并在超声条件下溶解,配制成氢氧化铟摩尔浓度为1mmol/mL、氧化亚铜摩尔浓度为0.5mmol/mL~0.9mmol/mL的溶液,加入用一正丁胺、二硫化碳与巯基丙酸按照体积比14:1:1配制的溶液中混合均匀,得到氢氧化铟-氧化亚铜-二硫化碳-巯基丙酸混合溶液;所述氢氧化铟与二硫化碳的摩尔体积比为1:0.1mmol/mL,用溶剂热法制备CuInS2纳米晶;
1.2.3制备铜铟硫吸收层
将CuInS2纳米晶超声分散于金属盐前驱体溶液中得到均匀的纳米晶前驱体溶液,所述CuInS2纳米晶与金属盐前驱体溶液的质量体积比为5mg/mL,采用一步旋涂法在钼金属层背电极上制备厚度为1μm~1.5μm铜铟硫吸收层;
1.3、对铜铟硫吸收层进行硒化处理
将制得的铜铟硫吸收层衬底和硒粉封装在密闭的玻璃试管放入硒化炉中,玻璃试管内充氩气为保护气体,将硒化炉以10℃/min~20℃/min速度升温,在450℃~550℃下对铜铟硫吸收层进行硒化处理45min~70min,制得厚度为2μm~3μm铜铟硫硒吸收层;
1.4、在铜铟硫硒吸收层上制备CdS缓冲层
将硫酸镉溶解于去离子水中配制浓度为0.2mg/mL~0.4mg/mL的硫酸镉溶液,加入氨水调节溶液pH值至9~13,加入硫脲,得硫酸镉-硫脲混合溶液;所述硫脲与硫酸镉的质量比为2:1~3:1;将制得的铜铟硫硒吸收层衬底放入硫酸镉-硫脲混合溶液中,在60℃~80℃水浴条件下反应10min~20min,在铜铟硫硒吸收层上制得厚度为60nm~100nm的CdS缓冲层;
1.5、在CdS缓冲层上制备本征氧化锌高阻层
采用射频磁控溅射法,以烧结纯度为99.99%的氧化锌陶瓷靶为靶材,在CdS缓冲层上制备厚度为50nm~80nm的本征氧化锌高阻层;其中,衬底温度保持为室温,射频磁控溅射的工作压力为0.1Pa~1Pa,工作气体是纯度为99.99%的氩气,溅射功率为50W~125W;
1.6、在本征氧化锌高阻层上制备氧化铟锡薄膜低阻抗层
采用真空直流磁控溅射法,以铟锡氧化物为靶材,所述铟锡氧化物中In2O3与SnO2的质量比为9:1;其中,衬底温度保持在室温,工作气体是纯度为99.99%的氩气,工作气压为2Pa~3Pa,溅射功率为50W~125W;在本征氧化锌高阻层上制备厚度为100nm~200nm的氧化锡铟薄膜低阻抗层,制得用于太阳能电池的铜铟硫硒薄膜。
钠钙玻璃片清洗时,先将钠钙玻璃片用去污粉和洗涤剂按照质量体积比为1:1g/mL配制洗涤液加入去离子水中超声波清洗15min~20min,所述洗涤剂与去离子水的体积比为1:10,用去离子水冲洗;再将钠钙玻璃片用去离子水超声波清洗20min~30min,随后去离子水超声波清洗2次~3次;然后将钠钙玻璃片放入无水乙醇中进行超声波30min~60min后,用吹风机吹干;最后将玻璃片放到紫外臭氧清洗机中进行紫外臭氧清洗30min~60min。
制备CuInS2纳米晶时,将氢氧化铟-氧化亚铜-二硫化碳-巯基丙酸混合溶液在常温下搅拌2h~3h,倒入带有聚四氟乙烯内衬的不锈钢高压反应釜中,液面达到内衬75%,密封后以2℃/min~5℃/min升温到150℃~200℃,反应1.5h~2h;反应完后,自然冷却到室温,加入2mL~3mL甲醇溶液,产生沉淀物,将沉淀物用无水乙醇反复洗涤、过滤4次~6次,在50℃~60℃下真空干燥4h~12h,得到CuInS2纳米晶。
本发明的有益效果:
(1)、选用的原料安全环保,操作方法简便,不引入其它杂质,太阳能电池转换效率高;并且对设备要求低,能源消耗小,对环境友好,适合工业化生产;
(2)、吸收层的制备是在非真空的环境中完成的,将分子前体溶液作为铜铟硫纳米粒子交联剂来制备吸收层,工艺简单,生产和使用成本较低;
(3)、吸收层采用旋涂法一步成膜,缩短了生产周期,避免了层与层之间位错的产生,并且可以通过调整纳米晶溶液浓度来控吸收层的厚度;
(4)、硒化后的铜铟硫硒吸收层具有黄铜矿结构,孔隙率较低,通过调整铜铟硫硒吸收层中硒的含量,可以调节带隙;可以通过调整硒化温度和硒化时间,来控制铜铟硫硒吸收层的厚度,从而能最大范围的吸收太阳光,提高太阳能电池的光电转换效率。
附图说明
图1是本发明的CuInS2纳米粒子XRD图;
图2是本发明的CuInS2薄膜SEM图;
图3是本发明的CuInS2薄膜XRD图;
图4是本发明的CuInSSe薄膜SEM图;
图5是本发明的CuInSSe薄膜截面SEM图;
图6是本发明的CuInSSe薄膜XRD图;
图7是本发明的CuInSSe薄膜透射光谱图;
图8是本发明的CuInSSe薄膜制备太阳能电池的电池效率图。
具体实施方式
实施例1
1.1、在衬底上制备钼金属背电极
用厚度为1mm的载玻片作为衬底,先将载玻片放入用去污粉和洗涤剂(50mL去离子水中加入5g去污粉和5mL洗涤剂)配制的洗涤液中超声波清洗15min,用去离子水冲洗;再放入去离子水中超声波清洗20min,去离子水超声波清洗2次;然后将载玻片放入无水乙醇中进行超声波30min后,用吹风机吹干;最后放到紫外臭氧清洗机中进行紫外臭氧清洗30min;采用磁控溅射法,在衬底的一侧沉积厚度为1μm的钼金属层作为背电极;其中,溅射腔的真空度为1.0×10-3Pa,以纯度为99.99%的氩气作为反应气体,沉积时气压控制在0.5Pa,衬底温度为200℃,溅射功率为100W;
1.2、在钼金属背电极上制备铜铟硫吸收层
1.2.1、配制金属盐前驱体溶液
在锥形瓶中加入0.009mol氧化亚铜、0.01mol氢氧化铟、8mL一正丁胺和5mL二硫化碳,混合并在超声条件下溶解,抽滤得到滤饼;将滤饼加入到10mL甲醇中,经超声分散均匀后作为金属盐前驱体溶液;
1.2.2、制备CuInS2纳米晶
取0.009mol氧化亚铜和0.01mol氢氧化铟加入到10mL一正丁胺中,混合并在超声条件下溶解,然后加入到14mL的一正丁胺、1mL二硫化碳和1mL巯基丙酸混合溶液中,室温下搅拌2h,倒入带有聚四氟乙烯内衬的不锈钢高压反应釜中,液面达到内衬75%,密封后以2℃/min升温到150℃,反应1.5h;反应完后,自然冷却到室温,加入2mL甲醇溶液,产生沉淀物,将沉淀物用无水乙醇反复洗涤、过滤4次,在50℃下真空干燥4h,得到CuInS2纳米晶;其XRD图如图1所示,与标准卡片JCPDS85-1575衍射峰一致,28o、47o和55o的峰位分别对应着四方相CuInS2的(112)、(220)和(312)晶面;
1.2.3制备铜铟硫吸收层
将50mgCuInS2纳米晶超声分散于10mL金属盐前驱体溶液中得到均匀的纳米晶前驱体溶液,采用一步旋涂法在钼金属层背电极上制备厚度为1μm铜铟硫吸收层,其SEM图如图2所示、XRD图如图3所示;由图2可以看出,铜铟硫吸收层薄膜比较平整,粒径比较均匀,表面有沟壑存在;图3中的Mo特征主要来自背电极Mo;
1.3、对铜铟硫吸收层进行硒化处理
将制得的铜铟硫吸收层衬底和硒粉封装在密闭的玻璃试管中放入硒化炉,玻璃试管内充氩气为保护气体,将硒化炉以10℃/min速度升温到450℃,在450℃下对铜铟硫吸收层进行硒化处理45min,制得厚度为2μm铜铟硫硒吸收层;其SEM表面、截面图、XRD图、薄膜透射光谱图如图4、图5、图6、图7所示;由图4可以看出硒化后的薄膜表面为较大颗粒组成;由图5可以看出整个吸收层颗粒尺寸较大,说明铜铟硫硒吸收层硒化比较完全;图6中标记的峰位均为铜铟硫硒主要特征峰;由图7可以看出在可见光波长390nm~780nm范围内,可见光的透过率接近于0,说明我们制备的薄膜几乎可以将可见光全部吸收;
1.4、在铜铟硫硒吸收层上制备CdS缓冲层
将40mg硫酸镉溶解于200mL去离子水中配制浓度为0.2mg/mL硫酸镉溶液,加入氨水调节溶液pH值至9,加入80mg硫脲,得到硫酸镉-硫脲混合溶液,将制得的铜铟硫硒吸收层衬底放入硫酸镉-硫脲混合溶液中,在60℃水浴条件下反应10min,在铜铟硫硒吸收层上制得厚度为60nm的CdS缓冲层;
1.5、在CdS缓冲层上制备本征氧化锌高阻层
采用射频磁控溅射法,以烧结纯度为99.99%的氧化锌陶瓷靶为靶材,在CdS缓冲层制备厚度为50nm的本征氧化锌高阻层;其中,衬底温度保持为室温,射频磁控溅射的工作压力为0.1Pa,工作气体是纯度为99.99%的氩气,溅射功率为50W;
1.6、在本征氧化锌高阻层上制备氢氧化铟锡(In2O3:SnO2)薄膜低阻抗层
采用真空直流磁控溅射法,以铟锡氧化物为靶材,所述铟锡氧化物中In2O3与SnO2的质量比为9:1,其中,衬底温度保持在室温,工作气体是纯度为99.99%的氩气,工作气压为2Pa,溅射功率为50W,在本征氧化锌高阻层上制备厚度为100nm的氧化锡铟薄膜低阻抗层,制得用于太阳能电池的铜铟硫硒薄膜;
1.7、在氢氧化铟锡薄膜低阻抗层上制备铝电极
用掩膜遮住氧化锡铟薄膜低阻抗层,利用Al靶材,通过蒸镀法在氧化锡铟薄膜低阻抗层上制备Al电极,组装完整结构的铜铟硫硒薄膜太阳能电池;其电池效率如图8所示。由图8可知,当面积为0.368cm2时,电池的开路电压为Voc=465mV,短路电流Jsc=23.46mA/cm2,填充因子FF=42.8%,转换效率为n=4.68%。
实施例2
1.1、在衬底上制备钼金属背电极
用厚度为1mm的钠钙玻璃片作为衬底,先将钠钙玻璃片用去污粉和洗涤剂(50mL去离子水中加入5g去污粉和5mL洗涤剂)配制的洗涤液中超声波清洗20min,用去离子水冲洗;再将钠钙玻璃片用去离子水超声波清洗30min,去离子水超声波清洗3次;然后将钠钙玻璃片放入无水乙醇中进行超声波60min后,用吹风机吹干;最后将玻璃片放到紫外臭氧清洗机中进行紫外臭氧清洗60min;采用磁控溅射法,在衬底的一侧沉积厚度为1.5μm的钼金属层作为背电极;其中,溅射腔的真空度为1.0×10-4Pa,通入纯度为99.99%的氩气作为反应气体,沉积时气压控制在2.5Pa,衬底温度为300℃,溅射功率为200W;
1.2、在钼金属背电极上制备铜铟硫吸收层
1.2.1、配制金属盐前驱体溶液
在锥形瓶中加入0.007mol氧化亚铜、0.01mol氢氧化铟、10mL一正丁胺和8mL二硫化碳,混合并在超声条件下溶解,抽滤得到滤饼;将滤饼加入到10mL乙醇中,经超声分散均匀后作为金属盐前驱体溶液;
1.2.2、制备CuInS2纳米晶
取0.007mol氧化亚铜和0.01mol氢氧化铟加入10mL一正丁胺中,混合并在超声条件下溶解,然后加入到14mL的一正丁胺、1mL二硫化碳和1mL巯基丙酸混合溶液中,室温下搅拌2.5h,倒入带有聚四氟乙烯内衬的不锈钢高压反应釜中,液面达到内衬75%,密封后以5℃/min升温到200℃,反应1.5h;反应完后,自然冷却到室温,加入2mL甲醇溶液,产生沉淀物,将沉淀物用无水乙醇反复洗涤、过滤4次,在50℃下真空干燥12h,得到CuInS2纳米晶;
1.2.3制备铜铟硫吸收层
将50mgCuInS2纳米晶超声分散于10mL金属盐前驱体溶液中得到均匀的纳米晶前驱体溶液,采用一步旋涂法在钼金属层背电极上制备厚度为1.5μm铜铟硫吸收层;
1.3、对铜铟硫吸收层进行硒化处理
将制得的铜铟硫吸收层衬底和硒粉封装在密闭的玻璃试管中放入硒化炉,玻璃试管内充氩气为保护气体,将硒化炉以20℃/min速度升温到550℃,在550℃下对铜铟硫吸收层进行硒化处理70min,制得厚度为3μm铜铟硫硒吸收层;
1.4、在铜铟硫硒吸收层上制备CdS缓冲层
将80mg硫酸镉溶解于200mL去离子水中配制硫酸镉溶液(浓度为0.4mg/mL),加入氨水调节溶液pH值至13,加入200mg硫脲(硫脲与硫酸镉的质量比为2.5:1),得到硫酸镉-硫脲混合溶液,将制得的铜铟硫硒吸收层衬底放入硫酸镉-硫脲混合溶液中,水浴加热至80℃,水浴反应20min,在铜铟硫硒吸收层上制得厚度为100nm的CdS缓冲层;
1.5、在CdS缓冲层上制备本征氧化锌高阻层
采用射频磁控溅射法,以烧结纯度为99.99%的氧化锌陶瓷靶为靶材,在CdS缓冲层制备厚度为80nm的本征氧化锌高阻层;其中,衬底温度保持为室温,射频磁控溅射的工作压力为1Pa,工作气体是纯度为99.99%的氩气,溅射功率为125W;
1.6、在本征氧化锌高阻层上制备氢氧化铟锡(In2O3:SnO2)薄膜低阻抗层
采用真空直流磁控溅射法,以铟锡氧化物为靶材,所述铟锡氧化物中In2O3与SnO2的质量比为9:1,其中,衬底温度保持在室温,工作气体是纯度为99.99%的氩气,工作气压为3Pa,溅射功率为125W,在本征氧化锌高阻层上制备厚度为200nm的氧化锡铟薄膜低阻抗层,制得用于太阳能电池的铜铟硫硒薄膜;
1.7、在氢氧化铟锡薄膜低阻抗层上制备铝电极
用掩膜遮住氧化锡铟薄膜低阻抗层,利用Al靶材,通过蒸镀法在氧化锡铟薄膜低阻抗层上制备Al电极,组装完整结构的铜铟硫硒薄膜太阳能电池。经测试,电池转换效率为4.37%。
实施例3
1.1、在衬底上制备钼金属背电极
用厚度为1mm的钠钙玻璃片作为衬底,先将钠钙玻璃片用去污粉和洗涤剂(50mL去离子水中加入5g去污粉和5mL洗涤剂)配制的洗涤液中超声波清洗18min,用去离子水冲洗;再将钠钙玻璃片用去离子水超声波清洗25min,去离子水超声波清洗3次;然后将钠钙玻璃片放入无水乙醇中进行超声波45min后,用吹风机吹干;最后将玻璃片放到紫外臭氧清洗机中进行紫外臭氧清洗45min;采用磁控溅射法,在衬底的一侧沉积厚度为1.25μm的钼金属层作为背电极;其中,溅射腔的真空度为0.5×10-3Pa,通入纯度为99.99%的氩气作为反应气体,沉积时气压控制在2.0Pa,衬底加热至250℃,溅射功率为150W;
1.2、在钼金属背电极上制备铜铟硫吸收层
1.2.1、配制金属盐前驱体溶液
在锥形瓶中加入0.005mol氧化亚铜、0.01mol氢氧化铟、15mL一正丁胺和10mL二硫化碳,混合并在超声条件下溶解,抽滤得到滤饼;将滤饼加入到8mL氯仿中,经超声分散均匀后作为金属盐前驱体溶液;
1.2.2、制备CuInS2纳米晶
取0.005mol氧化亚铜和0.01mol氢氧化铟加入10mL一正丁胺中,混合并在超声条件下溶解,然后加入到14mL的正丁胺、1mL二硫化碳和1mL巯基丙酸混合溶液中,室温下搅拌3h,倒入带有聚四氟乙烯内衬的不锈钢高压反应釜中,液面达到内衬75%,密封后以3℃/min升温到180℃,反应2h;反应完后,自然冷却到室温,加入3mL甲醇溶液,产生沉淀物,将沉淀物用无水乙醇反复洗涤、过滤6次,在60℃下真空干燥8h,得到CuInS2纳米晶;
1.2.3制备铜铟硫吸收层
将50mgCuInS2纳米晶超声分散于10mL金属盐前驱体溶液中得到均匀的纳米晶前驱体溶液,采用一步旋涂法在钼金属层背电极上制备厚度为1.2μm铜铟硫吸收层;
1.3、对铜铟硫吸收层进行硒化处理
将制得的铜铟硫吸收层衬底和硒粉封装在密闭的玻璃试管中放入硒化炉,玻璃试管内充氩气为保护气体,将硒化炉以15℃/min速度升温到500℃,对铜铟硫吸收层进行硒化处理60min,制得厚度为2.5μm铜铟硫硒吸收层;
1.4、在铜铟硫硒吸收层上制备CdS缓冲层
将60mg硫酸镉溶解于200mL去离子水中配制浓度为0.3mg/mL的硫酸镉溶液,加入氨水调节溶液pH值至10,加入180mg硫脲,得到硫酸镉-硫脲混合溶液,将制得的铜铟硫硒吸收层衬底放入硫酸镉-硫脲混合溶液中,在70℃水浴条件下反应15min,在铜铟硫硒吸收层上制得厚度为80nm的CdS缓冲层;
1.5、在CdS缓冲层上制备本征氧化锌高阻层
采用射频磁控溅射法,以烧结纯度为99.99%的氧化锌陶瓷靶为靶材,在CdS缓冲层制备厚度为70nm的本征氧化锌高阻层;其中,衬底温度保持为室温,射频磁控溅射的工作压力为0.5Pa,工作气体是纯度为99.99%的氩气,溅射功率为100W;
1.6、在本征氧化锌高阻层上制备氢氧化铟锡(In2O3:SnO2)薄膜低阻抗层
采用真空直流磁控溅射法,以铟锡氧化物为靶材,所述铟锡氧化物中In2O3与SnO2的质量比为9:1,其中,衬底温度保持在室温,工作气体是纯度为99.99%的氩气,工作气压为2.5Pa,溅射功率为100W,在本征氧化锌高阻层上制备厚度为150nm的氧化锡铟薄膜低阻抗层,制得用于太阳能电池的铜铟硫硒薄膜;
1.7、在氢氧化铟锡薄膜低阻抗层上制备铝电极
用掩膜遮住氧化锡铟薄膜低阻抗层,利用Al靶材,通过蒸镀法在氧化锡铟薄膜低阻抗层上制备Al电极,组装完整结构的铜铟硫硒薄膜太阳能电池。经测试,其电池转换效率为4.28%。
Claims (3)
1.一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法,其特征是:具体步骤如下:
1.1、在衬底上制备钼金属背电极
用厚度为1mm的钠钙玻璃片作为衬底,经过清洗后,采用磁控溅射法,在衬底的一侧沉积厚度为1μm~1.5μm的钼金属层作为背电极;其中,溅射腔的真空度为1.0×10-3Pa~1.0×10-4Pa,通入纯度为99.99%的氩气作为反应气体,沉积时气压控制在0.5Pa~2.5Pa,衬底温度为200℃~300℃,溅射功率为100W~200W;
1.2、在钼金属背电极上制备铜铟硫吸收层
1.2.1、配制金属盐前驱体溶液
将氢氧化铟、氧化亚铜、二硫化碳和一正丁胺混合并在超声条件下溶解,抽滤得到滤饼,将滤饼加入到有机溶剂中配制成金属盐前驱体溶液;所述氢氧化铟与氧化亚铜的摩尔比为1:0.5~1:0.9,所述氢氧化铟与一正丁胺的摩尔体积比为1:0.8mmol/mL~1:1.5mmol/mL,所述氢氧化铟与二硫化碳摩尔体积比为1:0.5mmol/mL~1:1mmol/mL,所述氢氧化铟与有机溶剂的摩尔体积比为1:0.8mmol/mL~1:1mmol/mL;其中,有机溶剂为甲醇、乙醇或氯仿;
1.2.2、制备CuInS2纳米晶
将氢氧化铟、氧化亚铜和一正丁胺混合并在超声条件下溶解,配制成氢氧化铟摩尔浓度为1mmol/mL、氧化亚铜摩尔浓度为0.5mmol/mL~0.9mmol/mL的溶液,加入用一正丁胺、二硫化碳与巯基丙酸按照体积比14:1:1配制的溶液中混合均匀,得到氢氧化铟-氧化亚铜-一正丁胺-二硫化碳-巯基丙酸混合溶液;所述氢氧化铟与二硫化碳的摩尔体积比为1:0.1mmol/mL,用溶剂热法制备CuInS2纳米晶;
1.2.3制备铜铟硫吸收层
将CuInS2纳米晶超声分散于金属盐前驱体溶液中得到均匀的纳米晶前驱体溶液,所述CuInS2纳米晶与金属盐前驱体溶液的质量体积比为5mg/mL,采用一步旋涂法在钼金属层背电极上制备厚度为1μm~1.5μm铜铟硫吸收层;
1.3、对铜铟硫吸收层进行硒化处理
将制得的铜铟硫吸收层衬底和硒粉封装在密闭的玻璃试管中放入硒化炉,玻璃试管内充氩气为保护气体,将硒化炉以10℃/min~20℃/min速度升温,在450℃~550℃下对铜铟硫吸收层进行硒化处理45min~70min,制得厚度为2μm~3μm铜铟硫硒吸收层;
1.4、在铜铟硫硒吸收层上制备CdS缓冲层
将硫酸镉溶解于去离子水中配制浓度为0.2mg/mL~0.4mg/mL的硫酸镉溶液,加入氨水调节溶液pH值至9~13,加入硫脲,得硫酸镉-硫脲混合溶液;所述硫脲与硫酸镉的质量比为2:1~3:1;将制得的铜铟硫硒吸收层衬底放入硫酸镉-硫脲混合溶液中,在60℃~80℃水浴条件下反应10min~20min,在铜铟硫硒吸收层上制得厚度为60nm~100nm的CdS缓冲层;
1.5、在CdS缓冲层上制备本征氧化锌高阻层
采用射频磁控溅射法,以烧结纯度为99.99%的氧化锌陶瓷靶为靶材,在CdS缓冲层上制备厚度为50nm~80nm的本征氧化锌高阻层;其中,衬底温度保持为室温,射频磁控溅射的工作压力为0.1Pa~1Pa,工作气体是纯度为99.99%的氩气,溅射功率为50W~125W;
1.6、在本征氧化锌高阻层上制备氧化铟锡薄膜低阻抗层
采用真空直流磁控溅射法,以铟锡氧化物为靶材,所述铟锡氧化物中In2O3与SnO2的质量比为9:1;其中,衬底温度保持在室温,工作气体是纯度为99.99%的氩气,工作气压为2Pa~3Pa,溅射功率为50W~125W;在本征氧化锌高阻层上制备厚度为100nm~200nm的氧化锡铟薄膜低阻抗层,制得用于太阳能电池的铜铟硫硒薄膜。
2.根据权利要求1所述的用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法,其特征是:钠钙玻璃片清洗时,先将钠钙玻璃片用去污粉和洗涤剂按照质量体积比为1:1g/mL配制洗涤液加入去离子水中超声波清洗15min~20min,所述洗涤剂与去离子水的体积比为1:10,用去离子水冲洗;再将钠钙玻璃片用去离子水超声波清洗20min~30min,去离子水超声波清洗2次~3次;然后将钠钙玻璃片放入乙醇溶液中进行超声波30min~60min后,用吹风机吹干;最后将玻璃片放到紫外臭氧清洗机中进行紫外臭氧清洗30min~60min。
3.根据权利要求1所述的用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法,其特征是:制备CuInS2纳米晶时,将氢氧化铟-氧化亚铜-二硫化碳-巯基丙酸混合溶液在常温下搅拌2h~3h,倒入带有聚四氟乙烯内衬的不锈钢高压反应釜中,液面达到内衬75%,密封后以2℃/min~5℃/min升温到150℃~200℃,反应1.5h~2h;反应完后,自然冷却到室温,加入2mL~3mL甲醇溶液,产生沉淀物,将沉淀物用无水乙醇反复洗涤、过滤4次~6次,在50℃~60℃下真空干燥4h~12h,得到CuInS2纳米晶。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310733812.2A CN103700725B (zh) | 2013-12-27 | 2013-12-27 | 一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310733812.2A CN103700725B (zh) | 2013-12-27 | 2013-12-27 | 一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103700725A CN103700725A (zh) | 2014-04-02 |
CN103700725B true CN103700725B (zh) | 2016-04-20 |
Family
ID=50362195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310733812.2A Expired - Fee Related CN103700725B (zh) | 2013-12-27 | 2013-12-27 | 一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103700725B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015195388A1 (en) * | 2014-06-17 | 2015-12-23 | NuvoSun, Inc. | Selenization or sufurization method of roll to roll metal substrates |
CN105161571A (zh) * | 2015-09-01 | 2015-12-16 | 上海空间电源研究所 | 一种在柔性衬底上印刷涂膜制备铜铟硒硫吸收层的方法 |
CN105355718A (zh) * | 2015-11-20 | 2016-02-24 | 中国电子科技集团公司第十八研究所 | 一种铜铟镓硒太阳电池窗口层的制备方法 |
CN105789373A (zh) * | 2016-01-07 | 2016-07-20 | 南京大学 | 一种制备铜基硫硒化物半导体薄膜方法 |
CN107059131A (zh) * | 2017-04-21 | 2017-08-18 | 南京信息工程大学 | 一种半导体纳米晶及其制备方法与应用 |
CN109358041B (zh) * | 2018-09-19 | 2024-04-30 | 信阳师范学院 | 一种硫化镉薄膜比色装置及制备硫化镉薄膜的方法 |
CN115161610B (zh) * | 2022-09-07 | 2023-04-07 | 合肥工业大学 | 一种铜锑硒太阳能电池光吸收层薄膜的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101764268A (zh) * | 2010-01-13 | 2010-06-30 | 欣旺达电子股份有限公司 | 一种动力电池平衡充电方法及动力电池平衡电路 |
CN101764169A (zh) * | 2008-12-25 | 2010-06-30 | 铼宝科技股份有限公司 | 太阳能电池元件及其制作方法 |
CN102254999A (zh) * | 2010-12-29 | 2011-11-23 | 友达光电股份有限公司 | 太阳电池的制造方法 |
CN102522434A (zh) * | 2011-12-15 | 2012-06-27 | 香港中文大学 | 铜铟镓硒薄膜光伏电池装置及其制备方法 |
CN102751388A (zh) * | 2012-07-18 | 2012-10-24 | 林刘毓 | 一种铜铟镓硒薄膜太阳能电池的制备方法 |
-
2013
- 2013-12-27 CN CN201310733812.2A patent/CN103700725B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101764169A (zh) * | 2008-12-25 | 2010-06-30 | 铼宝科技股份有限公司 | 太阳能电池元件及其制作方法 |
CN101764268A (zh) * | 2010-01-13 | 2010-06-30 | 欣旺达电子股份有限公司 | 一种动力电池平衡充电方法及动力电池平衡电路 |
CN102254999A (zh) * | 2010-12-29 | 2011-11-23 | 友达光电股份有限公司 | 太阳电池的制造方法 |
CN102522434A (zh) * | 2011-12-15 | 2012-06-27 | 香港中文大学 | 铜铟镓硒薄膜光伏电池装置及其制备方法 |
CN102751388A (zh) * | 2012-07-18 | 2012-10-24 | 林刘毓 | 一种铜铟镓硒薄膜太阳能电池的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103700725A (zh) | 2014-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103700725B (zh) | 一种用于太阳能电池的基于纳米粒子铜铟硫硒薄膜的制备方法 | |
CN104659123B (zh) | 化合物薄膜太阳能电池及其制备方法 | |
CN102779864B (zh) | 一种碲化镉薄膜电池及其制备方法 | |
CN107359248B (zh) | 一种稳定无光浴高效有机太阳能电池器件及其制备方法 | |
CN104393103A (zh) | 一种Cu2ZnSnS4半导体薄膜的制备方法及其应用 | |
CN104021942A (zh) | 一种提高氧化锌基染料敏化太阳能电池光电性能的方法 | |
CN102154622A (zh) | 用作太阳能电池光吸收层的铜铟镓硒薄膜的制备方法 | |
CN106128772B (zh) | 一种硫化铅量子点光伏电池的制备方法 | |
CN102544373B (zh) | 一种量子点敏化有序体异质结太阳电池及其制备方法 | |
CN109244249A (zh) | 对空穴传输层进行修饰的钙钛矿太阳能电池器件及其制备方法 | |
CN108511608B (zh) | 一种用于钙钛矿太阳能电池电子传输层的水滑石热解材料及其制备方法、钙钛矿太阳能电池 | |
CN102503161A (zh) | 一种SnS纳米晶薄膜的制备方法 | |
CN105161572B (zh) | 一种铜锌锡硫太阳电池吸收层的墨水多层涂敷制备方法 | |
CN101615640B (zh) | 氧化锌基太阳能电池及其制备方法 | |
CN101872685B (zh) | 固态染料敏化纳米晶微晶硅复合薄膜太阳电池及其制备方法 | |
CN101794826B (zh) | 铜锌锡硫四元化合物及其构成的薄膜太阳电池及制备方法 | |
CN103531713A (zh) | 无机纳米晶/共轭聚合物杂化太阳能电池的制备方法 | |
CN109390470A (zh) | 一种基于“热风法”制备的钙钛矿纳米薄膜及其制备方法与在太阳能电池中的应用 | |
CN102344166B (zh) | 一种Cu2ZnSnS4太阳能吸收层材料的制备方法 | |
CN108198940B (zh) | 一种ZnMgO纳米柱氧化铝纳米颗粒复合薄膜作为电子传输层的倒结构有机太阳电池 | |
CN103400894A (zh) | 一种制备硫化锌光电薄膜的方法 | |
CN107819053B (zh) | 应用于太阳电池的可印刷硫化镉纳米晶薄膜的制备方法 | |
CN102024878A (zh) | 一种太阳能电池用铜铟镓硫薄膜的制备方法 | |
CN105552235B (zh) | 一种提高钙钛矿太阳能电池效率的方法 | |
CN106673050A (zh) | 一种三维枝状纳米CuO的制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160420 Termination date: 20161227 |
|
CF01 | Termination of patent right due to non-payment of annual fee |