CN103354253B - 半导体发光装置制造方法 - Google Patents
半导体发光装置制造方法 Download PDFInfo
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- CN103354253B CN103354253B CN201310258023.8A CN201310258023A CN103354253B CN 103354253 B CN103354253 B CN 103354253B CN 201310258023 A CN201310258023 A CN 201310258023A CN 103354253 B CN103354253 B CN 103354253B
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- emitting apparatus
- semiconductor light
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- semiconductor layer
- dielectric film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 160
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000011347 resin Substances 0.000 claims description 25
- 229920005989 resin Polymers 0.000 claims description 25
- 238000000926 separation method Methods 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical group 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000035699 permeability Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 2
- 238000009434 installation Methods 0.000 claims 2
- 239000009719 polyimide resin Substances 0.000 claims 2
- 238000004382 potting Methods 0.000 claims 1
- 210000004877 mucosa Anatomy 0.000 abstract description 10
- 239000007789 gas Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 7
- 230000001771 impaired effect Effects 0.000 description 6
- 238000000608 laser ablation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- -1 Merlon Polymers 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- UAJUXJSXCLUTNU-UHFFFAOYSA-N pranlukast Chemical compound C=1C=C(OCCCCC=2C=CC=CC=2)C=CC=1C(=O)NC(C=1)=CC=C(C(C=2)=O)C=1OC=2C=1N=NNN=1 UAJUXJSXCLUTNU-UHFFFAOYSA-N 0.000 description 1
- 229960004583 pranlukast Drugs 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/94—Laser ablative material removal
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (29)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009180402A JP4686625B2 (ja) | 2009-08-03 | 2009-08-03 | 半導体発光装置の製造方法 |
JP2009-180402 | 2009-08-03 | ||
CN201010243804.6A CN101989573B (zh) | 2009-08-03 | 2010-08-02 | 半导体发光装置制造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010243804.6A Division CN101989573B (zh) | 2009-08-03 | 2010-08-02 | 半导体发光装置制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103354253A CN103354253A (zh) | 2013-10-16 |
CN103354253B true CN103354253B (zh) | 2016-05-11 |
Family
ID=43527419
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010243804.6A Active CN101989573B (zh) | 2009-08-03 | 2010-08-02 | 半导体发光装置制造方法 |
CN201310258023.8A Active CN103354253B (zh) | 2009-08-03 | 2010-08-02 | 半导体发光装置制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010243804.6A Active CN101989573B (zh) | 2009-08-03 | 2010-08-02 | 半导体发光装置制造方法 |
Country Status (4)
Country | Link |
---|---|
US (5) | US8148183B2 (zh) |
JP (1) | JP4686625B2 (zh) |
CN (2) | CN101989573B (zh) |
TW (2) | TWI549315B (zh) |
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JP4724222B2 (ja) | 2008-12-12 | 2011-07-13 | 株式会社東芝 | 発光装置の製造方法 |
JP4686625B2 (ja) * | 2009-08-03 | 2011-05-25 | 株式会社東芝 | 半導体発光装置の製造方法 |
JP5612336B2 (ja) * | 2010-03-08 | 2014-10-22 | スタンレー電気株式会社 | 半導体発光素子の製造方法 |
JP2011199193A (ja) * | 2010-03-23 | 2011-10-06 | Toshiba Corp | 発光装置及びその製造方法 |
JP4778107B1 (ja) * | 2010-10-19 | 2011-09-21 | 有限会社ナプラ | 発光デバイス、及び、その製造方法 |
JP5537446B2 (ja) | 2011-01-14 | 2014-07-02 | 株式会社東芝 | 発光装置、発光モジュール、発光装置の製造方法 |
JP5603793B2 (ja) | 2011-02-09 | 2014-10-08 | 株式会社東芝 | 半導体発光装置 |
JP5603813B2 (ja) | 2011-03-15 | 2014-10-08 | 株式会社東芝 | 半導体発光装置及び発光装置 |
JP5535114B2 (ja) | 2011-03-25 | 2014-07-02 | 株式会社東芝 | 発光装置、発光モジュール、発光装置の製造方法 |
DE102011015726B9 (de) * | 2011-03-31 | 2023-07-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip, Display mit einer Mehrzahl von Halbleiterchips und Verfahren zu deren Herstellung |
JP5642623B2 (ja) * | 2011-05-17 | 2014-12-17 | 株式会社東芝 | 半導体発光装置 |
KR20140034262A (ko) * | 2011-06-01 | 2014-03-19 | 코닌클리케 필립스 엔.브이. | 지지 기판에 접합된 발광 디바이스 |
JP2013021175A (ja) * | 2011-07-12 | 2013-01-31 | Toshiba Corp | 半導体発光素子 |
KR20130012376A (ko) * | 2011-07-25 | 2013-02-04 | 삼성전자주식회사 | 반도체 발광소자 제조방법 |
JP5662277B2 (ja) | 2011-08-08 | 2015-01-28 | 株式会社東芝 | 半導体発光装置及び発光モジュール |
TWI447957B (zh) * | 2011-08-22 | 2014-08-01 | Chao Yuan Cheng | Iii-v族晶圓可重複進行磊晶製程之方法與構造 |
JP2013065726A (ja) | 2011-09-16 | 2013-04-11 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP2013140942A (ja) * | 2011-12-07 | 2013-07-18 | Toshiba Corp | 半導体発光装置 |
DE102012101409A1 (de) * | 2011-12-23 | 2013-06-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
TWI489658B (zh) * | 2012-05-25 | 2015-06-21 | Toshiba Kk | 半導體發光裝置及光源單元 |
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JP5685567B2 (ja) * | 2012-09-28 | 2015-03-18 | 株式会社東芝 | 表示装置の製造方法 |
TWI583773B (zh) | 2012-12-18 | 2017-05-21 | 財團法人工業技術研究院 | 有機發光二極體 |
JP6121281B2 (ja) * | 2013-08-06 | 2017-04-26 | 株式会社ディスコ | ウエーハの加工方法 |
JP6428249B2 (ja) | 2013-12-25 | 2018-11-28 | 日亜化学工業株式会社 | 発光装置 |
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CN104538529B (zh) * | 2014-12-31 | 2017-03-22 | 江阴长电先进封装有限公司 | 一种led封装结构及其晶圆级封装方法 |
CN107408604B (zh) * | 2015-04-03 | 2019-07-09 | 创光科学株式会社 | 氮化物半导体紫外线发光元件以及氮化物半导体紫外线发光装置 |
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JP2017054901A (ja) * | 2015-09-09 | 2017-03-16 | 豊田合成株式会社 | Iii族窒化物半導体発光装置とその製造方法 |
CN105428488B (zh) * | 2015-12-28 | 2018-04-17 | 上海交通大学 | 一种基于金丝球焊法的光刺激神经电极器件及其制备方法 |
US10373868B2 (en) * | 2016-01-18 | 2019-08-06 | Infineon Technologies Austria Ag | Method of processing a porous conductive structure in connection to an electronic component on a substrate |
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Publication number | Publication date |
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JP2011035184A (ja) | 2011-02-17 |
US20140070264A1 (en) | 2014-03-13 |
US20150303361A1 (en) | 2015-10-22 |
US8610163B2 (en) | 2013-12-17 |
CN101989573B (zh) | 2015-11-25 |
TW201123526A (en) | 2011-07-01 |
US9306141B2 (en) | 2016-04-05 |
CN103354253A (zh) | 2013-10-16 |
TW201407812A (zh) | 2014-02-16 |
CN101989573A (zh) | 2011-03-23 |
US20110027921A1 (en) | 2011-02-03 |
US8852976B2 (en) | 2014-10-07 |
US8148183B2 (en) | 2012-04-03 |
JP4686625B2 (ja) | 2011-05-25 |
US20120153344A1 (en) | 2012-06-21 |
US20140329348A1 (en) | 2014-11-06 |
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TWI430472B (zh) | 2014-03-11 |
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