CN103326707A - 一种兼容多种ddr的输入接收电路 - Google Patents
一种兼容多种ddr的输入接收电路 Download PDFInfo
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- CN103326707A CN103326707A CN2013101922280A CN201310192228A CN103326707A CN 103326707 A CN103326707 A CN 103326707A CN 2013101922280 A CN2013101922280 A CN 2013101922280A CN 201310192228 A CN201310192228 A CN 201310192228A CN 103326707 A CN103326707 A CN 103326707A
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CN201310192228.0A CN103326707B (zh) | 2013-05-23 | 2013-05-23 | 一种兼容多种ddr的输入接收电路 |
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CN103326707A true CN103326707A (zh) | 2013-09-25 |
CN103326707B CN103326707B (zh) | 2016-02-10 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107623518A (zh) * | 2017-09-26 | 2018-01-23 | 北京集创北方科技股份有限公司 | 电平转换电路和应用电平转换电路的方法 |
CN108718194A (zh) * | 2018-08-01 | 2018-10-30 | 灿芯半导体(上海)有限公司 | Ddr接收器用参考电平电路 |
CN109004943A (zh) * | 2018-08-03 | 2018-12-14 | 佛山市甜慕链客科技有限公司 | 一种用于在发射机设备中重建共模的方法及*** |
Citations (5)
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CN1246710A (zh) * | 1998-07-13 | 2000-03-08 | 三星电子株式会社 | 具有同步信号发生器的集成电路器件 |
US20020079941A1 (en) * | 2000-08-14 | 2002-06-27 | Jung Yeon-Jae | Duty cycle correction circuits that reduce distortion caused by mismatched transistor pairs |
US6507229B1 (en) * | 1999-09-24 | 2003-01-14 | Kabushiki Kaisha Toshiba | Voltage controlled delay circuit |
CN101930787A (zh) * | 2009-06-24 | 2010-12-29 | 合肥力杰半导体科技有限公司 | 支持多内存标准的内存接口电路构架和在mos工艺上的实施 |
CN102545780A (zh) * | 2010-12-23 | 2012-07-04 | 鼎亿数码科技(上海)有限公司 | 压控振荡器的偏置电路 |
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- 2013-05-23 CN CN201310192228.0A patent/CN103326707B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1246710A (zh) * | 1998-07-13 | 2000-03-08 | 三星电子株式会社 | 具有同步信号发生器的集成电路器件 |
US6507229B1 (en) * | 1999-09-24 | 2003-01-14 | Kabushiki Kaisha Toshiba | Voltage controlled delay circuit |
US20020079941A1 (en) * | 2000-08-14 | 2002-06-27 | Jung Yeon-Jae | Duty cycle correction circuits that reduce distortion caused by mismatched transistor pairs |
CN101930787A (zh) * | 2009-06-24 | 2010-12-29 | 合肥力杰半导体科技有限公司 | 支持多内存标准的内存接口电路构架和在mos工艺上的实施 |
CN102545780A (zh) * | 2010-12-23 | 2012-07-04 | 鼎亿数码科技(上海)有限公司 | 压控振荡器的偏置电路 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107623518A (zh) * | 2017-09-26 | 2018-01-23 | 北京集创北方科技股份有限公司 | 电平转换电路和应用电平转换电路的方法 |
CN107623518B (zh) * | 2017-09-26 | 2024-05-14 | 北京集创北方科技股份有限公司 | 电平转换电路和应用电平转换电路的方法 |
CN108718194A (zh) * | 2018-08-01 | 2018-10-30 | 灿芯半导体(上海)有限公司 | Ddr接收器用参考电平电路 |
CN108718194B (zh) * | 2018-08-01 | 2023-11-03 | 灿芯半导体(上海)股份有限公司 | Ddr接收器用参考电平电路 |
CN109004943A (zh) * | 2018-08-03 | 2018-12-14 | 佛山市甜慕链客科技有限公司 | 一种用于在发射机设备中重建共模的方法及*** |
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CN103326707B (zh) | 2016-02-10 |
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Effective date of registration: 20160620 Address after: 10, building 430223, building A2, finance port, Optics Valley Road, Jiangxia District, Wuhan, Hubei Patentee after: Wuhan Xindong Science and Technology Co., Ltd. Patentee after: Suzhou Actichip Technology Co., Ltd. Address before: 215021, D605-610, 99 benevolence Road, Suzhou Industrial Park, Jiangsu, China Patentee before: Suzhou Actichip Technology Co., Ltd. |
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Effective date of registration: 20210127 Address after: Room 9011, 9 / F, South Tower, international business center (ICC), 3000 Huandao East Road, Hengqin New District, Zhuhai City, Guangdong Province Patentee after: Xindong Technology (Zhuhai) Co.,Ltd. Address before: 430223 10th floor, building A2, financial port, Guanggu Avenue, Jiangxia District, Wuhan City, Hubei Province Patentee before: INNOSILICON TECHNOLOGY Ltd. Patentee before: INNOSILICON TECHNOLOGIES Co.,Ltd. |
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