CN103081327A - 具有肖特基二极管的整流器装置 - Google Patents
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Abstract
本发明涉及一种整流器装置,其具有压入式二极管,所述压入式二极管包含肖特基二极管作为半导体元件。肖特基二极管在二极管损耗随温度增加而升高的工作区域中运行。
Description
技术领域
本发明涉及一种整流器装置,其具有二极管、尤其是压入式二极管。这种整流器装置尤其用在机动车发电机***中。
背景技术
在机动车发电机***中,为了交流电流或者三相电流的整流通常使用由硅制成的二极管。例如,将6个二极管互连成B6整流器电桥。这些二极管通常实施为所谓的压入式二极管。压入式二极管在一侧压入到整流器的冷却体中并且由此与整流器的冷却体在电方面和在热方面牢固地且持久地连接。
在整流器运行期间,在二极管上降落电损耗功率Pel,其由正向损耗或导通损耗PF和反向损耗PR组成并且被转换成热。所述热通过整流器导出至发电机的冷却空气或抽吸空气。因为在发电机转速较低时机动车发电机的冷却功率还相对较低,另一方面电功率输出随着发电机转速增加而快速升高,所以存在一个转速,在所述转速时二极管温度最高(所述转速通常在2500-3500转/分钟的范围内)。所述工作点称作热点。二极管的最大允许阻挡层温度必须至少针对热点中的运行设计。
对于对称的整流器装置而言,例如在B6电桥中,得到平均电正向损耗功率PF,其由导通电流或正向电流IFAV的算术平均与二极管的取决于温度的导通电压UF(T)的积构成:
PF=IFAV·UF(T) (1)
对于机动车二极管,导通电压UF(T)随着温度而减小。在相关的电流范围中,温度系数TKUF例如是大约-1mV/K。
当替代常规的pn二极管而使用具有低导通电压UF的肖特基二极管时,可以减小正向损耗PF。由于肖特基二极管的导通损耗更小,发动机的效率和输出功率提高。特别有利地,使用所谓的高效二极管(HED),其具有取决于反向电压的反向电流。HED例如是沟道MOS势垒肖特基二极管(TMBS)或沟道结势垒肖特基二极管(TJBS)。例如在DE69428996T2和DE102004053761A1中描述这种二极管。
在传统的pn二极管中反向损耗通常是可忽略的,而在肖特基二极管或HED中由于导通电压较低而在高温度下出现显著的反向损耗。在大致相应于发电机电压的反向电压UR下,平均反向损耗PR适用:
PR=0.5·IR(T)·UR (2)
在给定的反向电压UR下反向电流IR(T)同样取决于温度。所述反向电流随着温度快速升高。反向电流可以在相关的温度范围中借助于两个常数loo和Ea来表达。在此,loo描述在无穷高的温度下的电流(单位为安培)而EA描述激活能量(单位为开尔文)。适用:
借助所说明的相关性在图1中示出了在IFAV=50A的导通电流和UR=14V的反向电压下HED的平均总损耗功率P(W)关于阻挡层温度Tj的曲线图。在此,选择具有参数loo=4?107A和Ea=9300K的二极管。
在低温度下,反向损耗相对于正向损耗可以忽略。因为反向电压由于负温度系数而随着温度增加而下降,所以***在热学上是稳定的。在较高温度下,反向损耗PR升高并且最后甚至超过正向损耗PF。随后,总损耗功率P(W)随着温度增加而增大。在图1中,将如下位置绘制成拐点A,从所述位置开始总损耗功率随着温度而增大。拐点A的阻挡层温度以TA表示。在所示示例中TA=200℃。
如果阻挡层温度Tj超过TA处的所述拐点,则存在热学不稳定性的危险,因为反向电流由于随着温度升高的反向电流升高而可以越来越高。这相应于由出现反向电流的反馈效应引起的热漂移。
出于上述原因,包含实现为压入式二极管的肖特基二极管的整流器装置始终在工作区域中运行,所述工作区域位于拐点A以下,即在二极管损耗随温度增加而减小的工作区域中。
发明内容
在具有在权利要求1中说明的特征的整流器装置中,增大了整流器装置的工作区域。这主要通过如下方式来实现:整流器装置不仅在二极管损耗随温度增加而减小的工作区域中运行而且在二极管损耗随温度增加又增大的区域中运行。在此,通过以下还要阐述的设计准则实现:整流器装置也可以在二极管损耗随温度增加又增大的区域中可靠运行。
附图说明
以下参照图2至5更详细地阐述本发明。附图示出:
图2:具有总共六个以B6电桥形式连接的肖特基二极管的整流器装置,
图3:用于阐述压入式二极管的结构的概略图,
图4:用于阐述沟道MOS势垒肖特基二极管的概略图,
图5:用于阐述根据本发明的整流器装置的工作区域的曲线图。
具体实施方式
图2示出具有总共六个以B6电桥形式彼此连接的肖特基二极管D1至D6的整流器装置。所述整流器电桥电路设置用于三相机动车发电机。以U、V、W表示电桥电路的相端子,以B+表示电桥电路的正直流电源。当然具有其他相数量——例如5、6或7个相的整流器装置也是可能的。
在图2中示出的整流器装置的整流器二极管安装在压入式壳体中。整流器二极管尤其可以是压入式二极管,其作为半导体元件包含至少一个肖特基二极管。
图3示出用于阐述常用的压入式二极管100的结构的概略图,其以部分剖切的横截面示出。所述二极管100具有基座102,所述基座102具有基座底部101。台座103与基座102一体连接,在所述台座103上在其方面例如通过焊接(焊料105b)施加有半导体芯片。半导体芯片104在其方面例如又通过焊接(焊料105a)通过头部圆柱106和头部圆锥107与头部引线108连接。优选居中设置的台座103由环绕的壁109和通过壁109和台座103形成的沟槽110包围。从台座103来看,在壁109的另一边具有连接到滚花区域111a上的挤压区域111,在压入整流器二极管100时力可以垂直于半导体芯片104的平面作用到所述滚花区域上。头部圆锥107、头部圆柱106、半导体芯片104和台座103由封装113包围,所述封装113由保护套筒112限定。台座103和头部圆柱106朝着半导体芯片在边缘上具有倒棱。所述倒棱例如可以以焊料填充。此外,在芯片的边缘上施加有钝化部114,所述钝化部114将芯片和芯片边缘上的焊料封闭。此外,台座103具有环绕的肩部115,其具有斜棱120,所述斜棱120伸入到封装113中。
对于在图3中示出的整流器二极管100,半导体芯片104固定在提高的台座103上,所述台座103由壁109包围。如此形成的沟槽110的长度在此是壁109的高度的两倍。优点在于,结构对于压入整流器二极管时的变形是特别牢固的。台座和壁/沟槽的组合确保了与不具有显著构造的壁109的结构相比在芯片支承面上的弯曲应力更均匀并且更低。另一优点是芯片居中不重要。优选地,壁比支座更低,尤其是在制造二极管时和在钝化时不妨碍到达芯片。
根据图3,整流器二极管100在其基座102上、例如在台座103的周边上具有肩部115。所述肩部用于建立封装与基座的形状配合。一方面,得到机械稳定性,台座在一定程度上与封装113钩连。另一方面,例如实施为浇注树脂材料的封装在制造时在干燥的情况下将二极管的头部与半导体芯片一起压到基座上。这样,在总体上得到稳定的结构。肩部115在此具有斜棱120,由此避免出现高机械应力并且避免在外部机械负载以及热负载的情况下封装中形成裂纹的危险,其在肩部的逐渐尖细的端部处产生。
当然,也可以使用压入式二极管的其他变型方案。
图4示出用于阐述沟道MOS势垒肖特基二极管(TMBS二极管)的概略图,其优选使用在根据本发明的整流器装置中。
这样的TMBS二极管由一个n+衬底1、一个n外延层2、至少两个在n外延层中通过蚀刻实现的沟槽(沟道)6、在芯片的前侧4上作为阳极电极和在芯片的背侧5上作为阴极电极的金属层以及沟槽6与前侧4上的金属层之间的氧化层7构成。
在电学上,TMBS二极管是MOS结构(金属层、氧化层7和n外延层2)和肖特基二极管(作为阳极的金属层和作为阴极的n外延层2之间的肖特基势垒)的组合。
在导通方向上,电流流经沟槽6之间的凸台区域。沟槽6本身不用于电流流动。
TMBS二极管的优点在于反向电流的减小。在反向上,不仅在MOS结构中而且在肖特基二极管中形成空间电荷区。空间电荷区随着升高的电压而扩展并且在小于TMBS的击穿电压的电压下在相邻的沟槽6之间的区域的中部相遇。由此屏蔽导致高反向电流的肖特基效应并且减小反向电流。所述屏蔽效应强烈取决于结构参数Dt(沟槽的深度)、Wm(沟槽之间的距离)、Wt(沟槽的宽度)以及To(氧化层的厚度)。
在具有二极管、尤其是压入式二极管的整流器中,整流器的例如在发电机的热点中运行时出现的热阻在整个运行时段上稳定地保持在一个确定的值以下,因为稳健的压入接触的热学特性实际上不发生变化。
通过反向电流IR(T)产生的损耗功率作为热通过整流器导出,即每个二极管的电损耗功率Pel必须作为热功率Ptherm通过整流器导出至周围空气。Ptherm在此相应于阻挡层温度Tj和周围温度或冷却温度Ta之间的温度差dT与阻挡层和周围空气之间的热阻Rth的商。热阻随着发电机转速而改变并且因此在此表示在热点中运行时出现的热阻。二极管在热方面是稳定的,只要适用:
因为二极管的正向损耗PF具有负温度系数,所以其在等式(4)中可以忽略。借助等式(3)中的反向电流相关性,在适用如下等式时,在高温下在根据等式(4)没有热漂移的情况下能够实现可靠的运行:
图5示出用于阐述根据本发明的整流器装置的工作区域的曲线图。在此如在图1中那样沿着横坐标绘制了温度Tj(℃)并且沿着横坐标绘制了总损耗功率P(W)。在所述实施例中,对于整流器的二极管,对于反向电压UR=14V和导通电流IFAV=50A示出了二极管的阻挡层与5卡尔文/瓦特的冷空气之间的热阻Rth。二极管可以远远在传统的阻挡层温度边界以上运行。在所示示例中,200℃的最大阻挡层温度TA扩宽直至近似250℃的温度TB。这意味着,肖特基二极管可以运行的工作区域也延伸至二极管损耗随着温度增加又升高的温度范围。
在发电机的热点中运行时,半导体的阻挡层与周围空气之间的热阻不超过一个预给定的值。例如,所述热阻小于7K/W,优选小于5K/W,并且特别优选小于3K/W。
二极管的最大允许阻挡层温度(如以上已经介绍的那样)根据如下公式确定:
优选使用沟道MOS势垒肖特基二极管作为肖特基二极管(如以上已经介绍的那样),其沟槽深度是1μm至3μm并且其沟槽与沟槽的距离是0.5μm至1μm。
替选地,使用沟道结势垒肖特基二极管(TJBS二极管)作为肖特基二极管,其沟槽深度是1μm至3μm并且其沟槽与沟槽的距离是0.5μm至1μm。
优选地,肖特基二极管是具有0.65eV至0.75eV的肖特基势垒的二极管。
Claims (11)
1.整流器装置,其具有二极管、尤其是压入式二极管,所述二极管包含肖特基二极管作为半导体元件,其特征在于,所述肖特基二极管(D1-D6)在二极管损耗随温度增加而升高的工作区域中运行。
2.根据权利要求1所述的整流器装置,其特征在于,在发电机的热点中运行时,所述半导体元件的半导体的阻挡层与周围空气之间的热阻不超过一个预给定的值。
3.根据权利要求2所述的整流器装置,其特征在于,在所述发电机的热点中运行时,所述半导体的阻挡层与周围空气之间的热阻小于7K/W。
4.根据权利要求2所述的整流器装置,其特征在于,在所述发电机的热点中运行时,所述半导体的阻挡层与周围空气之间的热阻小于5K/W。
5.根据权利要求2所述的整流器装置,其特征在于,在所述发电机的热点中运行时,所述半导体的阻挡层与周围空气之间的热阻小于3K/W。
6.根据以上权利要求中任一项所述的整流器装置,其特征在于,二极管的最大允许的阻挡层温度根据如下公式来确定:
7.根据以上权利要求中任一项所述的发电机,其特征在于,沟道MOS势垒肖特基二极管(TMBS)用作肖特基二极管。
8.根据权利要求7所述的整流器装置,其特征在于,沟道MOS势垒肖特基二极管(TMBS)用作肖特基二极管,其中,沟槽深度是1-3μm并且沟槽与沟槽的距离是0.5-1μm。
9.根据权利要求1至6中任一项所述的整流器装置,其特征在于,沟槽结势垒肖特基二极管(TJBS)用作肖特基二极管。
10.根据权利要求9所述的整流器装置,其特征在于,沟道结势垒肖特基二极管(TJBS)用作肖特基二极管,其中,沟槽深度是1-3μm并且沟槽与沟槽的距离是0.5-1μm。
11.根据以上权利要求中任一项所述的整流器装置,其特征在于,所述肖特基二极管是具有0.65eV至0.75eV的肖特基势垒的二极管。
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CN110289220A (zh) * | 2019-07-07 | 2019-09-27 | 陕西航空电气有限责任公司 | 一种结温250℃的碳化硅二极管芯片绝缘保护方法 |
CN110728025A (zh) * | 2019-09-16 | 2020-01-24 | 中国振华集团永光电子有限公司(国营第八七三厂) | 一种肖特基模块封装二极管热阻计算方法 |
CN111108607A (zh) * | 2017-07-27 | 2020-05-05 | 激光*** | 半导体装置 |
CN111693840A (zh) * | 2020-06-18 | 2020-09-22 | 山东宝乘电子有限公司 | 一种利用反向特性测试肖特基二极管热阻的方法 |
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DE102012214056B4 (de) * | 2012-08-08 | 2020-10-29 | Robert Bosch Gmbh | Hoch temperaturwechselfeste Einpressdiode |
CN106057913A (zh) * | 2016-06-30 | 2016-10-26 | 南通康比电子有限公司 | 一种新型沟槽式势垒肖特基二极管及其生产工艺 |
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CN1677796A (zh) * | 2004-03-29 | 2005-10-05 | 株式会社电装 | 用于车辆的ac发电机 |
CN101065848A (zh) * | 2004-11-24 | 2007-10-31 | 罗伯特·博世有限公司 | 半导体装置和整流装置 |
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CN111108607A (zh) * | 2017-07-27 | 2020-05-05 | 激光*** | 半导体装置 |
CN111108607B (zh) * | 2017-07-27 | 2023-08-22 | 激光*** | 半导体装置 |
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CN111693840A (zh) * | 2020-06-18 | 2020-09-22 | 山东宝乘电子有限公司 | 一种利用反向特性测试肖特基二极管热阻的方法 |
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DE102010038879A1 (de) | 2012-02-09 |
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US20140001927A2 (en) | 2014-01-02 |
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US20130207525A1 (en) | 2013-08-15 |
WO2012016733A1 (de) | 2012-02-09 |
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