CN102994952A - Cu-Mn合金溅射靶材、使用其的薄膜晶体管配线以及薄膜晶体管 - Google Patents

Cu-Mn合金溅射靶材、使用其的薄膜晶体管配线以及薄膜晶体管 Download PDF

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Publication number
CN102994952A
CN102994952A CN2012101035920A CN201210103592A CN102994952A CN 102994952 A CN102994952 A CN 102994952A CN 2012101035920 A CN2012101035920 A CN 2012101035920A CN 201210103592 A CN201210103592 A CN 201210103592A CN 102994952 A CN102994952 A CN 102994952A
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China
Prior art keywords
film
alloy
sputtering target
atom
concentration
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CN2012101035920A
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Chinese (zh)
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辰巳宪之
上田孝史郎
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SH Copper Products Co Ltd
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Hitachi Cable Ltd
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Publication of CN102994952A publication Critical patent/CN102994952A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
CN2012101035920A 2011-09-09 2012-04-10 Cu-Mn合金溅射靶材、使用其的薄膜晶体管配线以及薄膜晶体管 Pending CN102994952A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-196992 2011-09-09
JP2011196992 2011-09-09

Publications (1)

Publication Number Publication Date
CN102994952A true CN102994952A (zh) 2013-03-27

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JP (1) JP2013067857A (ja)
KR (1) KR101323151B1 (ja)
CN (1) CN102994952A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104212997A (zh) * 2013-05-31 2014-12-17 日立金属株式会社 Cu-Mn合金膜和Cu-Mn合金溅射靶材以及Cu-Mn合金膜的成膜方法
CN111344434A (zh) * 2017-10-13 2020-06-26 霍尼韦尔国际公司 铜锰溅射靶

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JP2015159132A (ja) * 2012-06-14 2015-09-03 パナソニック株式会社 薄膜トランジスタ
WO2015049818A1 (ja) 2013-10-03 2015-04-09 パナソニック株式会社 薄膜トランジスタ基板の製造方法
US20150155313A1 (en) * 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20160336386A1 (en) * 2013-12-10 2016-11-17 Joled Inc. Thin-film transistor substrate and method of manufacturing the thin-film transistor substrate
US11035036B2 (en) * 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure

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CN101512730A (zh) * 2006-10-12 2009-08-19 株式会社爱发科 导电膜形成方法、薄膜晶体管、带有薄膜晶体管的面板以及薄膜晶体管的制造方法
CN100567559C (zh) * 2005-08-19 2009-12-09 三菱麻铁里亚尔株式会社 微粒发生少的含Mn铜合金溅射靶
CN102169905A (zh) * 2010-02-19 2011-08-31 株式会社神户制钢所 薄膜晶体管基板及显示器件
CN102640292A (zh) * 2009-11-27 2012-08-15 株式会社半导体能源研究所 半导体装置和及其制造方法

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JP2005232509A (ja) * 2004-02-18 2005-09-02 Mitsui Mining & Smelting Co Ltd Ｍｎ合金スパッタリングターゲットの製造方法及びその製法によるＭｎ合金スパッタリングターゲット
JP4065959B2 (ja) * 2004-08-31 2008-03-26 国立大学法人東北大学 液晶表示装置、スパッタリングターゲット材および銅合金
US7940361B2 (en) * 2004-08-31 2011-05-10 Advanced Interconnect Materials, Llc Copper alloy and liquid-crystal display device
JP2006322039A (ja) * 2005-05-18 2006-11-30 Sumitomo Metal Mining Co Ltd スパッタリングターゲット
US8188599B2 (en) * 2006-02-28 2012-05-29 Advanced Interconnect Materials, Llc Semiconductor device, its manufacturing method, and sputtering target material for use in the method
EP2014787B1 (en) * 2006-10-03 2017-09-06 JX Nippon Mining & Metals Corporation Cu-Mn ALLOY SPUTTERING TARGET
JP4453845B2 (ja) 2007-04-10 2010-04-21 国立大学法人東北大学 液晶表示装置及びその製造方法
US8168532B2 (en) * 2007-11-14 2012-05-01 Fujitsu Limited Method of manufacturing a multilayer interconnection structure in a semiconductor device
JP5280715B2 (ja) * 2008-03-18 2013-09-04 株式会社ジャパンディスプレイセントラル 配線形成方法
JP5571887B2 (ja) 2008-08-19 2014-08-13 アルティアム サービシズ リミテッド エルエルシー 液晶表示装置及びその製造方法
JP2011091364A (ja) * 2009-07-27 2011-05-06 Kobe Steel Ltd 配線構造およびその製造方法、並びに配線構造を備えた表示装置
JP2011077116A (ja) * 2009-09-29 2011-04-14 Sharp Corp 配線構造およびそれを備えた表示装置
JP5491845B2 (ja) * 2009-12-16 2014-05-14 株式会社Ｓｈカッパープロダクツ スパッタリングターゲット材

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CN100567559C (zh) * 2005-08-19 2009-12-09 三菱麻铁里亚尔株式会社 微粒发生少的含Mn铜合金溅射靶
CN101512730A (zh) * 2006-10-12 2009-08-19 株式会社爱发科 导电膜形成方法、薄膜晶体管、带有薄膜晶体管的面板以及薄膜晶体管的制造方法
CN102640292A (zh) * 2009-11-27 2012-08-15 株式会社半导体能源研究所 半导体装置和及其制造方法
CN102169905A (zh) * 2010-02-19 2011-08-31 株式会社神户制钢所 薄膜晶体管基板及显示器件

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104212997A (zh) * 2013-05-31 2014-12-17 日立金属株式会社 Cu-Mn合金膜和Cu-Mn合金溅射靶材以及Cu-Mn合金膜的成膜方法
CN111344434A (zh) * 2017-10-13 2020-06-26 霍尼韦尔国际公司 铜锰溅射靶

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KR20130028622A (ko) 2013-03-19
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ASS Succession or assignment of patent right

Owner name: SH COPPER INDUSTRY CO., LTD.

Free format text: FORMER OWNER: HITACHI CABLE CO., LTD.

Effective date: 20130801

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20130801

Address after: Ibaraki

Applicant after: Sh Copper Products Co Ltd

Address before: Tokyo, Japan, Japan

Applicant before: Hitachi Cable Co., Ltd.

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Application publication date: 20130327