CN102994952A - Cu-Mn合金溅射靶材、使用其的薄膜晶体管配线以及薄膜晶体管 - Google Patents
Cu-Mn合金溅射靶材、使用其的薄膜晶体管配线以及薄膜晶体管 Download PDFInfo
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- CN102994952A CN102994952A CN2012101035920A CN201210103592A CN102994952A CN 102994952 A CN102994952 A CN 102994952A CN 2012101035920 A CN2012101035920 A CN 2012101035920A CN 201210103592 A CN201210103592 A CN 201210103592A CN 102994952 A CN102994952 A CN 102994952A
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- 229910017566 Cu-Mn Inorganic materials 0.000 title claims abstract description 180
- 229910017871 Cu—Mn Inorganic materials 0.000 title claims abstract description 180
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 161
- 239000000956 alloy Substances 0.000 title claims abstract description 161
- 238000005477 sputtering target Methods 0.000 title claims abstract description 66
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 239000013077 target material Substances 0.000 title abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 189
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 238000009826 distribution Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 32
- 239000002245 particle Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 abstract description 48
- 238000000034 method Methods 0.000 abstract description 12
- 239000011572 manganese Substances 0.000 description 65
- 239000010949 copper Substances 0.000 description 46
- 238000009792 diffusion process Methods 0.000 description 29
- 239000007789 gas Substances 0.000 description 22
- 230000003647 oxidation Effects 0.000 description 20
- 238000007254 oxidation reaction Methods 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 17
- 239000011521 glass Substances 0.000 description 13
- 239000012528 membrane Substances 0.000 description 13
- 238000007669 thermal treatment Methods 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 12
- 238000005266 casting Methods 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000005097 cold rolling Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910000914 Mn alloy Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000003490 calendering Methods 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2011-196992 | 2011-09-09 | ||
JP2011196992 | 2011-09-09 |
Publications (1)
Publication Number | Publication Date |
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CN102994952A true CN102994952A (zh) | 2013-03-27 |
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Family Applications (1)
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CN2012101035920A Pending CN102994952A (zh) | 2011-09-09 | 2012-04-10 | Cu-Mn合金溅射靶材、使用其的薄膜晶体管配线以及薄膜晶体管 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2013067857A (ja) |
KR (1) | KR101323151B1 (ja) |
CN (1) | CN102994952A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104212997A (zh) * | 2013-05-31 | 2014-12-17 | 日立金属株式会社 | Cu-Mn合金膜和Cu-Mn合金溅射靶材以及Cu-Mn合金膜的成膜方法 |
CN111344434A (zh) * | 2017-10-13 | 2020-06-26 | 霍尼韦尔国际公司 | 铜锰溅射靶 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015159132A (ja) * | 2012-06-14 | 2015-09-03 | パナソニック株式会社 | 薄膜トランジスタ |
WO2015049818A1 (ja) | 2013-10-03 | 2015-04-09 | パナソニック株式会社 | 薄膜トランジスタ基板の製造方法 |
US20150155313A1 (en) * | 2013-11-29 | 2015-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20160336386A1 (en) * | 2013-12-10 | 2016-11-17 | Joled Inc. | Thin-film transistor substrate and method of manufacturing the thin-film transistor substrate |
US11035036B2 (en) * | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
Citations (4)
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CN101512730A (zh) * | 2006-10-12 | 2009-08-19 | 株式会社爱发科 | 导电膜形成方法、薄膜晶体管、带有薄膜晶体管的面板以及薄膜晶体管的制造方法 |
CN100567559C (zh) * | 2005-08-19 | 2009-12-09 | 三菱麻铁里亚尔株式会社 | 微粒发生少的含Mn铜合金溅射靶 |
CN102169905A (zh) * | 2010-02-19 | 2011-08-31 | 株式会社神户制钢所 | 薄膜晶体管基板及显示器件 |
CN102640292A (zh) * | 2009-11-27 | 2012-08-15 | 株式会社半导体能源研究所 | 半导体装置和及其制造方法 |
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JP2005232509A (ja) * | 2004-02-18 | 2005-09-02 | Mitsui Mining & Smelting Co Ltd | Mn合金スパッタリングターゲットの製造方法及びその製法によるMn合金スパッタリングターゲット |
JP4065959B2 (ja) * | 2004-08-31 | 2008-03-26 | 国立大学法人東北大学 | 液晶表示装置、スパッタリングターゲット材および銅合金 |
US7940361B2 (en) * | 2004-08-31 | 2011-05-10 | Advanced Interconnect Materials, Llc | Copper alloy and liquid-crystal display device |
JP2006322039A (ja) * | 2005-05-18 | 2006-11-30 | Sumitomo Metal Mining Co Ltd | スパッタリングターゲット |
US8188599B2 (en) * | 2006-02-28 | 2012-05-29 | Advanced Interconnect Materials, Llc | Semiconductor device, its manufacturing method, and sputtering target material for use in the method |
EP2014787B1 (en) * | 2006-10-03 | 2017-09-06 | JX Nippon Mining & Metals Corporation | Cu-Mn ALLOY SPUTTERING TARGET |
JP4453845B2 (ja) | 2007-04-10 | 2010-04-21 | 国立大学法人東北大学 | 液晶表示装置及びその製造方法 |
US8168532B2 (en) * | 2007-11-14 | 2012-05-01 | Fujitsu Limited | Method of manufacturing a multilayer interconnection structure in a semiconductor device |
JP5280715B2 (ja) * | 2008-03-18 | 2013-09-04 | 株式会社ジャパンディスプレイセントラル | 配線形成方法 |
JP5571887B2 (ja) | 2008-08-19 | 2014-08-13 | アルティアム サービシズ リミテッド エルエルシー | 液晶表示装置及びその製造方法 |
JP2011091364A (ja) * | 2009-07-27 | 2011-05-06 | Kobe Steel Ltd | 配線構造およびその製造方法、並びに配線構造を備えた表示装置 |
JP2011077116A (ja) * | 2009-09-29 | 2011-04-14 | Sharp Corp | 配線構造およびそれを備えた表示装置 |
JP5491845B2 (ja) * | 2009-12-16 | 2014-05-14 | 株式会社Shカッパープロダクツ | スパッタリングターゲット材 |
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2012
- 2012-03-15 KR KR1020120026338A patent/KR101323151B1/ko active IP Right Grant
- 2012-04-10 CN CN2012101035920A patent/CN102994952A/zh active Pending
- 2012-09-07 JP JP2012197037A patent/JP2013067857A/ja active Pending
Patent Citations (4)
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CN100567559C (zh) * | 2005-08-19 | 2009-12-09 | 三菱麻铁里亚尔株式会社 | 微粒发生少的含Mn铜合金溅射靶 |
CN101512730A (zh) * | 2006-10-12 | 2009-08-19 | 株式会社爱发科 | 导电膜形成方法、薄膜晶体管、带有薄膜晶体管的面板以及薄膜晶体管的制造方法 |
CN102640292A (zh) * | 2009-11-27 | 2012-08-15 | 株式会社半导体能源研究所 | 半导体装置和及其制造方法 |
CN102169905A (zh) * | 2010-02-19 | 2011-08-31 | 株式会社神户制钢所 | 薄膜晶体管基板及显示器件 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104212997A (zh) * | 2013-05-31 | 2014-12-17 | 日立金属株式会社 | Cu-Mn合金膜和Cu-Mn合金溅射靶材以及Cu-Mn合金膜的成膜方法 |
CN111344434A (zh) * | 2017-10-13 | 2020-06-26 | 霍尼韦尔国际公司 | 铜锰溅射靶 |
Also Published As
Publication number | Publication date |
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JP2013067857A (ja) | 2013-04-18 |
KR20130028622A (ko) | 2013-03-19 |
KR101323151B1 (ko) | 2013-10-30 |
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