CN102884588B - 多层结构透明导电膜及其制备方法 - Google Patents
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- CN102884588B CN102884588B CN201180023057.8A CN201180023057A CN102884588B CN 102884588 B CN102884588 B CN 102884588B CN 201180023057 A CN201180023057 A CN 201180023057A CN 102884588 B CN102884588 B CN 102884588B
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Classifications
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
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- C—CHEMISTRY; METALLURGY
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- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
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- C08J7/0423—Coating with two or more layers, where at least one layer of a composition contains a polymer binder with at least one layer of inorganic material and at least one layer of a composition containing a polymer binder
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- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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- C08J7/04—Coating
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- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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- C08J7/04—Coating
- C08J7/046—Forming abrasion-resistant coatings; Forming surface-hardening coatings
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
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- C—CHEMISTRY; METALLURGY
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- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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- C08J2367/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
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Abstract
本发明涉及一种透明导电膜及其制备方法,所述透明导电膜以顺序层叠形式包括折射率为n1的基底、折射率为n2的第一涂层、折射率为n3的第二涂层和折射率为n4的导电氧化物层,其中,所述各层的折射率符合n1≤n3<n2<n4。根据本发明的透明导电膜具有特别优异的色感和机械性能以及优异的透光度。
Description
技术领域
本发明涉及一种具有优良色感和机械性能以及优异透光度的透明导电膜。
背景技术
尽管在玻璃基底上形成的具有氧化铟薄膜的导电玻璃用作常规的透明导电膜,但是由于基底是玻璃,因此所述导电玻璃具有差的挠性和可加工性,并且视用途而定,在很多情况下不是所期望的。为应付这种情况,已经在商业上使用了在其上应用了作为基底的多种塑料膜的透明导电膜,所述塑料膜包括聚对苯二甲酸乙二醇酯膜,具有耐冲击性并能够减轻重量以及具有优异的挠性和可加工性。
然而,由于对其应用了作为基底的塑料膜的如上所述的透明导电膜在氧化铟薄膜的表面上具有高的光反射能力,因此出现透光度降低、色感(b*)降低以及机械性能下降的问题。
所述b*值是测量膜黄化程度的值,其中,所述值越高,膜看起来越黄。优选地,在使用触摸屏时所述值较低。
为降低所述b*,应当使在400-500nm波长范围内的反射最小化,并且为了同时维持高的总透光率以及较低的b*值,需要设计具有适合于此的折射率的层。
发明内容
技术问题
因此,本发明意欲提供一种具有优良色感和机械性能以及优异透光度的透明导电膜及其制备方法。
技术方案
本发明提供了一种透明导电膜,其以顺序层叠形式包括折射率为n1的基底、折射率为n2的第一涂层、折射率为n3的第二涂层和折射率为n4的导电氧化物层,其中,所述各层的折射率符合n1≤n3<n2<n4。
另外,本发明提供了一种包括所述透明导电膜的触摸屏。
此外,本发明提供了一种制备透明导电膜的方法,该方法包括顺序层叠折射率为n1的基底、折射率为n2的第一涂层、折射率为n3的第二涂层和折射率为n4的导电氧化物层的步骤,其中,所述各层的折射率符合n1≤n3<n2<n4。
有益效果
本发明的透明导电膜具有特别优异的色感和机械性能以及优异的透光度。
具体实施方式
下面将更详细地解释本发明。
本发明的特征在于,一种透明导电膜,其以顺序层叠形式包括折射率为n1的基底、折射率为n2的第一涂层、折射率为n3的第二涂层和折射率为n4的导电氧化物层,所述各层的折射率符合n1≤n3<n2<n4。另外,为改善透明导电膜的机械性能,可以在具有导电氧化物层的基底的相反侧上顺序层叠透明压敏粘合剂和第二基底,所述第二基底在至少一侧上具有能够改进物理性能的涂层。
尽管并不特别限定所述基底,但是可以使用具有透明性的塑料膜。其具体实例包括聚酯树脂、纤维素酯树脂、聚醚砜树脂、聚碳酸酯树脂、聚酰胺树脂、聚酰亚胺树脂、聚烯烃树脂、(甲基)丙烯酸类树脂、聚氯乙烯树脂、聚偏二氯乙烯树脂、聚苯乙烯树脂、聚乙烯醇树脂、聚丙烯酸酯树脂和聚苯硫醚树脂等。
所述基底的折射率优选为1.4-1.7。
另外,所述基底的厚度优选为2-200μm。如果所述基底的厚度小于2μm,则作为基底的机械性能可能劣化。如果其大于200μm,则在制备触摸屏时,接触的敏感性可能降低。
此外,为了改善涂层的涂覆性和粘附性,可对所述基底的表面进行溅射、电晕放电、紫外照射、酸/碱处理和底涂处理(primer treatment)等。
对于所述第一和第二涂层,可以使用有机材料、无机材料或有机-无机复合材料而不管其种类,只要各层符合折射率关系。作为所述有机材料,可以使用由热或UV固化的有机材料组成的树脂,其包括丙烯酸类树脂、聚氨酯树脂、硫尿烷树脂、三聚氰胺树脂、醇酸树脂和基于硅氧烷的聚合物等。所述无机材料包括CaF3、BaF2、SiO、LaF3、CeF、Al2O3、氮氧化硅和氮氧化铝等。
所述有机-无机复合材料可以通过从包含TiO2、Nb2O5、Ta2O5、Sb2O5、ZrO2、ZnO和ZnS等的单组分或混合组分的高折射粒子的丙烯酸类树脂、聚氨酯树脂、硫尿烷树脂、三聚氰胺树脂、醇酸树脂、基于硅氧烷的聚合物、由下面化学式1表示的有机硅烷化合物中选择至少一种来使用。在此,当使用有机硅烷化合物时,其与高折射粒子混合使用并必须能够调节折射率和交联性。
[化学式1]
(R1)m-Si-X(4-m)
其中,X可彼此相同或不同并表示为氢、卤素、具有1-12个碳原子的烷氧基、酰氧基、烷基羰基、烷氧基羰基或N(R2)2(其中,R2表示H或具有1-12个碳原子的烷基),R1可彼此相同或不同并表示为具有1-12个碳原子的烷基、链烯基、炔基、芳基、芳基烷基、烷基芳基、芳基链烯基、链烯基芳基、芳基炔基、炔基芳基、卤素、取代的氨基、酰胺基(amide)、醛基(aldehyde)、酮基、烷基羰基、羧基、巯基、氰基、羟基、具有1-12个碳原子的烷氧基、具有1-12个碳原子的烷氧基羰基、磺酸、磷酸、丙烯酰基氧基、甲基丙烯酰基氧基、环氧基或乙烯基,或者氧或-NR2(其中,R2表示H或具有1-12个碳原子的烷基)可插到基团R1和Si之间以成为-(R1)m-O-Si-X(4-m)或-(R1)m-NR2-Si-X(4-m),以及m表示1至3的整数。
所述有机硅烷的实例包括甲基三甲氧基硅烷、甲基三乙氧基硅烷、苯基三甲氧基硅烷、苯基三乙氧基硅烷、二甲基二甲氧基硅烷、二甲基二乙氧基硅烷、二苯基二甲氧基硅烷、二苯基二乙氧基硅烷、苯基二甲氧基硅烷、苯基二乙氧基硅烷、甲基二甲氧基硅烷、甲基二乙氧基硅烷、苯基甲基二甲氧基硅烷、苯基甲基二乙氧基硅烷、三甲基甲氧基硅烷、三甲基乙氧基硅烷、三苯基甲氧基硅烷、三苯基乙氧基硅烷、苯基二甲基甲氧基硅烷、苯基二甲基乙氧基硅烷、二苯基甲基甲氧基硅烷、二苯基甲基乙氧基硅烷、二甲基甲氧基硅烷、二甲基乙氧基硅烷、二苯基甲氧基硅烷、二苯基乙氧基硅烷、3-氨基丙基三乙氧基硅烷、3-环氧丙氧基丙基三甲氧基硅烷、对-氨基苯基硅烷、烯丙基三甲氧基硅烷、正-(2-氨基乙基)-3-氨基丙基三甲氧基硅烷、3-胺基丙基三乙氧基硅烷、3-氨基丙基三甲氧基硅烷、3-环氧丙氧基丙基二异丙基乙氧基硅烷、(3-环氧丙氧基丙基)甲基二乙氧基硅烷、3-环氧丙氧基丙基三甲氧基硅烷、3-巯基丙基三甲氧基硅烷、3-巯基丙基三乙氧基硅烷、3-甲基丙烯酰基氧基丙基甲基二乙氧基硅烷、3-甲基丙烯酰基氧基丙基甲基二甲氧基硅烷、3-甲基丙烯酰基氧基丙基三甲氧基硅烷、正-苯基氨基丙基三甲氧基硅烷、乙烯基甲基二乙氧基硅烷、乙烯基三乙氧基硅烷和乙烯基三甲氧基硅烷等。
当有机-无机复合材料层用作所述第一和第二涂层时,有机材料的量优选为1重量%以上,且更优选为5重量%以上。另外,所述无机材料的用量可以为0.01-99重量%,且更优选为少于95重量%。优选地,所述第一涂层的折射率高于透明基底或第二涂层的折射率且低于导电氧化物层的折射率,特别为1.5-2。
另外,所述第一涂层的厚度优选为10nm以上,且更优选为10-1,000nm。如果所述第一涂层的厚度大于1,000nm,则难以改善透明性并且会引起表面裂纹。
所述第二涂层的折射率优选高于基底的折射率且低于第一涂层的折射率,特别为1.4-1.9。
另外,所述第二涂层的厚度优选为10-500nm。如果所述第二涂层的厚度大于500nm,则不能同时满足优异的透明性和b*以及在表面上易于产生裂纹。
作为所述导电氧化物层,可以使用ITO和掺杂元素M的基于氧化锌的薄膜(Zn:M)等。所述元素M为掺杂元素,其可以是第13族或氧化态为+3的过渡金属中的元素。所述元素M的非限制性实例包括B、Al、Ga、In、Tl、Sc、V、Cr、Mn、Fe、Co或Ni等。优选地,可以使用铝(Al)或镓(Ga)等。
所述导电氧化物层的折射率优选为1.9-2.3,导电氧化物层的厚度优选为5-200nm。如果所述导电氧化物层的厚度小于5nm,则难以实施将其用作触摸屏的薄层电阻。如果其大于200nm,则难以改善透光度和色感(b*)并产生裂纹。
另外,根据本发明的透明导电膜还可包括以下形式的透明导电膜,其中,使用透明压敏粘合剂将第二基底粘附在其上顺序形成有第一涂层、第二涂层和导电氧化物层的所述基底的另一方向侧上。
为粘附所述第二基底,可以对第二基底制备压敏粘合剂层以将导电膜粘附在其上,相反地,也可以对基底制备压敏粘合剂层以粘附第二基底。
只要压敏粘合剂具有透明性,就可以没有限制地进行使用。例如,可以使用丙烯酸类压敏粘合剂、基于硅氧树脂的压敏粘合剂和基于橡胶的压敏粘合剂等。例如,可以使用丙烯酸类压敏粘合剂、硅氧树脂压敏粘合剂和橡胶压敏粘合剂等。在将第二基底粘附在其上之后,所述压敏粘合剂层可以改善透明导电膜中的导电氧化物层的抗划伤性或者通过缓冲作用改善触摸屏的触点特性(beating point characteristic)。为了更多地提高所述抗划伤性或触点特性,所述压敏粘合剂层可以具有1-100N/cm2的弹性系数以及至少1μm,优选5-100μm的厚度。
如果所述压敏粘合剂层的弹性系数小于1N/cm2,则压敏粘合剂层会变得没有弹性,从而通过施加压力可以容易地进行改性,在透明导电膜中的导电氧化物层上产生不均匀性,粘合剂会在加工切割的面上突出以及在提高导电氧化物层的抗划伤性或触摸屏的触点特性的效果上会降低。另外,如果弹性系数大于100N/cm2,则不能预期压敏粘合剂层中的缓冲效果,从而提高导电氧化物层的抗划伤性或触摸屏的触点特性的效果可能会降低。
另外,如果压敏粘合剂层的厚度小于1μm,则不能预期压敏粘合剂层中的缓冲效果,从而提高导电氧化物层的抗划伤性或触摸屏的触点特性的效果可能会降低。如果压敏粘合剂层的厚度大于100μm,则透明性会劣化,或者在压敏粘合剂层的形成、第二基底的粘附和成本方面会是不利的。
要使用所述压敏粘合剂层进行附着的所述第二基底能够赋予透明导电膜机械强度并防止产生卷曲。
接下来附着所述第二基底,如果在透明导电膜中需要挠性,则可以使用厚度为6-3,000μm的塑料膜作为所述的第二基底;如果不是特别需要挠性,则可以使用厚度为0.05-10mm的平板玻璃或塑料。
在可用作所述第二基底的塑料中,可以使用与透明导电膜中的基底相同的那些材料。
所述第二基底可至少在一侧上包括选自下列中的一种或多种:意欲防止污染的防污涂层、意欲保护外表面的硬涂层、改善可见性的低反射涂层和减反射涂层,从而改善透明导电膜的物理性能。
根据本发明的透明导电膜的优点在于,可以同时实施高透光率和优异的色感(b*)。在一个实施例中,所述透明导电膜能够同时满足总透光率为88%以上并且b*值为2.0以下。在另一个实施例中,所述透明导电膜能够同时满足总透光率为90%以上并且b*值为1.5以下。总透光率(%Tt)是测量透过膜的光的量的值,其表示总透光率越高,透光性越优异。另外,色感的值(b*)是测量膜中黄化程度的一个参数。该值越高,膜看起来越黄,因此该值优选较低以实施优异的色感。
此外,本发明提供了一种制备透明导电膜的方法,该方法包括顺序层叠折射率为n1的基底、折射率为n2的第一涂层、折射率为n3的第二涂层,以及折射率为n4的导电氧化物层的步骤,其中,所述各层的折射率符合n1≤n3<n2<n4。
作为在所述基底上顺序形成第一涂层、第二涂层和透明导电氧化物层的方法,可以使用真空沉积法、溅射法、离子镀法、涂覆法或化学气相沉积法(CVD)等,但是可以使用本领域中公知的常规方法而不必限制于此。
此外,本发明提供了一种包括所述透明导电膜的触摸屏。特别地,其可用于触摸屏中,如PDA、笔记本、OA·FA设备、ATM、手机和航行设备,并可应用于使用透明电极的所有领域。
另外,根据本发明的透明导电膜可以用于如LCD、OLED和电子报或OLED照明等显示器中。
实施例
下面将通过实施例更加详细地解释本发明。然而,下面的实施例仅是示例性地说明本发明,而并不是将本发明的范围限于此。
实施例1
在厚度为25μm的聚对苯二甲酸乙二醇酯膜(折射率1.6)上,顺序涂覆包含TiO2的丙烯酸涂覆液,在100℃下干燥1分钟,然后用光强为400mJ/cm2的UV照射以形成厚度为70nm的第一涂层(折射率1.80),以及涂覆包含ZrO2纳米粒的丙烯酸涂覆液,在100℃下干燥1分钟,然后用光强为400mJ/cm2的UV照射以形成厚度为45nm的第二涂层(折射率1.63)。接着,在由98.4%的氩气和1.6%的氧气组成的5毫托的气氛中采用溅射气相沉积厚度为30nm的ITO层,以制备透明导电膜。
实施例2
除了在上述实施例1中的第二涂层为通过在100℃下干燥其中调整了ZrO2纳米粒的量的丙烯酸涂覆液1分钟并用光强为400mJ/cm2的UV照射而获得的折射率为1.65以及厚度为45nm的涂层外,用与实施例1相同的方法制备透明导电膜。
实施例3
除了以下方面外,用与实施例1相同的方法制备透明导电膜:通过制备涂覆液并在50℃下干燥3分钟以及在120℃下干燥10分钟获得的折射率为1.61以及厚度为45nm的涂层用作上述实施例1中的第二涂层,其中,所述涂覆液通过以下步骤获得:将有机硅烷在乙醇中稀释到20重量%,将蒸馏水以1.5倍于烷氧基硅烷基团的量引入其中,向其中倒入催化量的盐酸并在25℃下使其反应24小时以制成溶胶溶液并且向其中引入Sb2O5纳米粒并稀释到2重量%。
对比例1
除了在上述实施例1中,使用厚度为145nm的第一涂层(折射率1.46)并且第二涂层的折射率为1.80且厚度为50nm之外,用与实施例1相同的方法制备透明导电膜。
折射率为1.46以及厚度为145nm的所述第一涂层通过以下步骤形成:向有机硅烷:四乙氧基硅烷:乙醇:蒸馏水(=1:6:7:2,重量比)的混合物中添加酸催化剂并在25℃下使混合物部分水解24小时以制备溶胶状态的组合物,将所述组合物涂覆到所述基底上并在60℃下干燥溶剂1分钟,之后于140℃下在对流加热箱中进行凝胶反应3分钟。
对比例2
除了没有涂覆上述实施例1中的第二涂层之外,用与实施例1相同的方法制备透明导电膜。
对比例3
除了在上述实施例1中,使用折射率为1.65的基底,第一涂层的折射率为1.80且厚度为80nm以及第二涂层的折射率为1.46且厚度为80nm之外,用与实施例1相同的方法制备透明导电膜。
试验例
用总光雾度仪(Total Light of Hazemeter)(JIS K 7015)测量总透光率(%Tt),结果在下表1中示出。
b*值的测量
所述b*的值为测量膜中变黄程度的参数。该值越高,膜看起来越黄,因此在触摸屏的应用中该值优选较低。为测量b*,使用SHIMAZU UV-VIS-NIR分光光度计(UV-3600),结果示于下表1中。
表1
总透光率(%Tt) | 色感(b*值) | |
实施例1 | 90.1 | 1.1 |
实施例2 | 90.2 | 0.8 |
实施例3 | 90.4 | 1.3 |
对比例1 | 82.5 | 1.62 |
对比例2 | 83.9 | -1.72 |
对比例3 | 90.7 | 6.17 |
如从上表1中可以看出的,根据本发明实施例1-3中的透明导电膜同时满足总透光率为88%以上以及b*值为2.0以下,因而可知它们具有优异的色感和优异的透光率。
工业实用性
根据本发明的透明导电膜具有特别优异的色感和机械性能以及优异的透光率,可以用于多种类型的触摸屏、显示器或发光领域中。
Claims (9)
1.一种透明导电膜,所述透明导电膜以顺序层叠形式包括折射率为n1的基底、折射率为n2的第一涂层、折射率为n3的第二涂层和折射率为n4的导电氧化物层,其中,所述各层的折射率符合n1≤n3<n2<n4,
所述基底的折射率为1.4-1.7并且厚度为2-200μm,
所述第一涂层的折射率为1.5-2.0并且厚度为10-1,000nm,
所述第二涂层的折射率为1.4-1.9并且厚度为10-500nm,
所述透明导电膜的总透光率为88%以上并且色感(b*)为2以下,
其中,所述透明导电膜在其上顺序形成有第一涂层、第二涂层和导电氧化物层的所述基底的另一方向侧上顺序地包括透明压敏粘合剂层和第二基底,
所述压敏粘合剂层具有1-100N/cm2的弹性系数以及5-100μm的厚度,以及所述第二基底的厚度为6-3,000μm。
2.根据权利要求1所述的透明导电膜,其特征在于,所述基底为具有透明性的聚酯树脂、纤维素酯树脂、聚醚砜树脂、聚碳酸酯树脂、聚酰胺树脂、聚酰亚胺树脂、聚烯烃树脂、(甲基)丙烯酸类树脂、聚氯乙烯树脂、聚偏二氯乙烯树脂、聚苯乙烯树脂、聚乙烯醇树脂、聚丙烯酸酯树脂或聚苯硫醚树脂。
3.根据权利要求1所述的透明导电膜,其特征在于,所述第一涂层为有机材料、无机材料或有机-无机复合材料。
4.根据权利要求1所述的透明导电膜,其特征在于,所述第二涂层为有机材料、无机材料或有机-无机复合材料。
5.根据权利要求1所述的透明导电膜,其特征在于,所述导电氧化物层为ITO或掺杂元素M的氧化锌薄膜(ZnO:M),其中,所述M为第13族或氧化态为+3的过渡金属中的元素。
6.根据权利要求1所述的透明导电膜,其特征在于,所述导电氧化物层的厚度为5-200nm。
7.根据权利要求1所述的透明导电膜,所述透明导电膜至少在所述第二基底的一侧上进一步包括选自防污涂层、硬涂层、低反射涂层和减反射涂层中的一层或多层功能层。
8.一种包括根据权利要求1-7中任一项所述的透明导电膜的触摸屏。
9.一种制备透明导电膜的方法,该方法包括顺序层叠折射率为n1的基底、折射率为n2的第一涂层、折射率为n3的第二涂层和折射率为n4的导电氧化物层的步骤,其中,所述各层的折射率符合n1≤n3<n2<n4,
所述基底的折射率为1.4-1.7并且厚度为2-200μm,
所述第一涂层的折射率为1.5-2.0并且厚度为10-1,000nm,
所述第二涂层的折射率为1.4-1.9并且厚度为10-500nm,
所述透明导电膜的总透光率为88%以上并且色感(b*)为2以下,
其中,所述透明导电膜在其上顺序形成有第一涂层、第二涂层和导电氧化物层的所述基底的另一方向侧上顺序地包括透明压敏粘合剂层和第二基底,
所述压敏粘合剂层具有1-100N/cm2的弹性系数以及5-100μm的厚度,以及所述第二基底的厚度为6-3,000μm。
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CN101566903A (zh) * | 2008-04-25 | 2009-10-28 | 联享光电股份有限公司 | 透明导电膜及应用其的具耐写性高穿透度电阻式触控面板 |
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JP2006030820A (ja) * | 2004-07-21 | 2006-02-02 | Hitachi Ltd | 表示装置および表示方法 |
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JP4508074B2 (ja) * | 2005-02-18 | 2010-07-21 | 日東電工株式会社 | 透明導電性積層体及びそれを備えたタッチパネル |
KR100884888B1 (ko) * | 2006-08-03 | 2009-02-23 | 주식회사 엘지화학 | 다층 플라스틱 기판 및 그 제조 방법 |
JP4314623B2 (ja) * | 2006-12-07 | 2009-08-19 | 日東電工株式会社 | 透明導電性積層体及びタッチパネル |
JP5130725B2 (ja) * | 2007-01-26 | 2013-01-30 | 凸版印刷株式会社 | 透明導電性積層体 |
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CN101566903A (zh) * | 2008-04-25 | 2009-10-28 | 联享光电股份有限公司 | 透明导电膜及应用其的具耐写性高穿透度电阻式触控面板 |
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