CN102411548B - 闪存控制器以及闪存间数据传输方法 - Google Patents
闪存控制器以及闪存间数据传输方法 Download PDFInfo
- Publication number
- CN102411548B CN102411548B CN201110332025.8A CN201110332025A CN102411548B CN 102411548 B CN102411548 B CN 102411548B CN 201110332025 A CN201110332025 A CN 201110332025A CN 102411548 B CN102411548 B CN 102411548B
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- China
- Prior art keywords
- data
- flash memory
- error
- flash
- detecting
- Prior art date
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- 230000015654 memory Effects 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 54
- 230000005540 biological transmission Effects 0.000 claims abstract description 59
- 238000012545 processing Methods 0.000 claims abstract description 12
- 238000012937 correction Methods 0.000 claims description 42
- 238000001514 detection method Methods 0.000 claims description 4
- 238000012790 confirmation Methods 0.000 abstract description 3
- 238000003491 array Methods 0.000 abstract description 2
- 238000012546 transfer Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000009365 direct transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
- G06F13/4204—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus
- G06F13/4234—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus
- G06F13/4239—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus with asynchronous protocol
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Quality & Reliability (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (8)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110332025.8A CN102411548B (zh) | 2011-10-27 | 2011-10-27 | 闪存控制器以及闪存间数据传输方法 |
PCT/CN2012/082131 WO2013060215A1 (zh) | 2011-10-27 | 2012-09-27 | 闪存控制器以及闪存间数据传输方法 |
JP2014537468A JP2014535104A (ja) | 2011-10-27 | 2012-09-27 | フラッシュメモリ制御器及びフラッシュメモリ間のデータ転送方法 |
US14/354,575 US20150058701A1 (en) | 2011-10-27 | 2012-09-27 | Flash memory controller and method of data transmission between flash memories |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110332025.8A CN102411548B (zh) | 2011-10-27 | 2011-10-27 | 闪存控制器以及闪存间数据传输方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102411548A CN102411548A (zh) | 2012-04-11 |
CN102411548B true CN102411548B (zh) | 2014-09-10 |
Family
ID=45913628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110332025.8A Active CN102411548B (zh) | 2011-10-27 | 2011-10-27 | 闪存控制器以及闪存间数据传输方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20150058701A1 (zh) |
JP (1) | JP2014535104A (zh) |
CN (1) | CN102411548B (zh) |
WO (1) | WO2013060215A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8874831B2 (en) | 2007-06-01 | 2014-10-28 | Netlist, Inc. | Flash-DRAM hybrid memory module |
US8904098B2 (en) | 2007-06-01 | 2014-12-02 | Netlist, Inc. | Redundant backup using non-volatile memory |
CN102411548B (zh) * | 2011-10-27 | 2014-09-10 | 忆正存储技术(武汉)有限公司 | 闪存控制器以及闪存间数据传输方法 |
US9436600B2 (en) | 2013-06-11 | 2016-09-06 | Svic No. 28 New Technology Business Investment L.L.P. | Non-volatile memory storage for multi-channel memory system |
US10339050B2 (en) | 2016-09-23 | 2019-07-02 | Arm Limited | Apparatus including a memory controller for controlling direct data transfer between first and second memory modules using direct transfer commands |
US10915448B2 (en) | 2017-08-22 | 2021-02-09 | Seagate Technology Llc | Storage device initiated copy back operation |
CN109669800B (zh) * | 2017-10-13 | 2023-10-20 | 爱思开海力士有限公司 | 用于写入路径错误的高效数据恢复 |
CN108038016B (zh) * | 2017-12-22 | 2021-01-01 | 湖南国科微电子股份有限公司 | 固态硬盘错误数据处理方法及装置 |
CN111008171B (zh) * | 2019-11-25 | 2020-12-22 | 中国兵器工业集团第二一四研究所苏州研发中心 | 一种带串行flash接口控制的通信ip电路 |
CN111625481B (zh) * | 2020-04-28 | 2022-07-26 | 深圳市德明利技术股份有限公司 | 一种防止闪存比特错误放大的方法和装置以及设备 |
CN113035267B (zh) * | 2021-03-25 | 2022-05-13 | 长江存储科技有限责任公司 | 一种半导体测试装置、数据处理方法、设备及存储介质 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101288056A (zh) * | 2006-03-13 | 2008-10-15 | 松下电器产业株式会社 | 闪速存储器用的存储控制器 |
CN101427225A (zh) * | 2000-11-22 | 2009-05-06 | 三因迪斯克公司 | 数据区段尺寸不同于存储器页面和/或区块尺寸之非易失性存储器***的操作技术 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8027194B2 (en) * | 1988-06-13 | 2011-09-27 | Samsung Electronics Co., Ltd. | Memory system and method of accessing a semiconductor memory device |
JP2003296199A (ja) * | 2002-01-29 | 2003-10-17 | Matsushita Electric Ind Co Ltd | 記憶装置、データ処理方法及びデータ処理プログラム |
US6895464B2 (en) * | 2002-06-03 | 2005-05-17 | Honeywell International Inc. | Flash memory management system and method utilizing multiple block list windows |
US7409473B2 (en) * | 2004-12-21 | 2008-08-05 | Sandisk Corporation | Off-chip data relocation |
KR100764749B1 (ko) * | 2006-10-03 | 2007-10-08 | 삼성전자주식회사 | 멀티-칩 패키지 플래시 메모리 장치 및 그것의 카피 백방법 |
CN100458977C (zh) * | 2007-04-29 | 2009-02-04 | 北京中星微电子有限公司 | 一种自适应控制闪存接口读写速度的装置和方法 |
US20090063786A1 (en) * | 2007-08-29 | 2009-03-05 | Hakjune Oh | Daisy-chain memory configuration and usage |
CN101246742B (zh) * | 2008-03-25 | 2010-06-16 | 威盛电子股份有限公司 | 电子装置与其数据传输方法 |
US8321757B2 (en) * | 2008-06-22 | 2012-11-27 | Sandisk Il Ltd. | Method and apparatus for error correction |
KR20100111990A (ko) * | 2009-04-08 | 2010-10-18 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 데이터 랜덤화 방법 |
KR101626084B1 (ko) * | 2009-11-25 | 2016-06-01 | 삼성전자주식회사 | 멀티 칩 메모리 시스템 및 그것의 데이터 전송 방법 |
KR101671334B1 (ko) * | 2010-07-27 | 2016-11-02 | 삼성전자주식회사 | 메모리 장치와 이의 데이터 제어방법 |
KR101736792B1 (ko) * | 2010-09-20 | 2017-05-18 | 삼성전자주식회사 | 플래시 메모리 및 그것의 셀프 인터리빙 방법 |
US20120110244A1 (en) * | 2010-11-02 | 2012-05-03 | Micron Technology, Inc. | Copyback operations |
CN102411548B (zh) * | 2011-10-27 | 2014-09-10 | 忆正存储技术(武汉)有限公司 | 闪存控制器以及闪存间数据传输方法 |
-
2011
- 2011-10-27 CN CN201110332025.8A patent/CN102411548B/zh active Active
-
2012
- 2012-09-27 US US14/354,575 patent/US20150058701A1/en not_active Abandoned
- 2012-09-27 WO PCT/CN2012/082131 patent/WO2013060215A1/zh active Application Filing
- 2012-09-27 JP JP2014537468A patent/JP2014535104A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101427225A (zh) * | 2000-11-22 | 2009-05-06 | 三因迪斯克公司 | 数据区段尺寸不同于存储器页面和/或区块尺寸之非易失性存储器***的操作技术 |
CN101288056A (zh) * | 2006-03-13 | 2008-10-15 | 松下电器产业株式会社 | 闪速存储器用的存储控制器 |
Also Published As
Publication number | Publication date |
---|---|
CN102411548A (zh) | 2012-04-11 |
JP2014535104A (ja) | 2014-12-25 |
WO2013060215A1 (zh) | 2013-05-02 |
US20150058701A1 (en) | 2015-02-26 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: MEMORIGHT MEMORITECH (WUHAN) CO., LTD. Free format text: FORMER NAME: MEMORIGHT STORAGE TECHNOLOGY (WUHAN) CO., LTD. |
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CP03 | Change of name, title or address |
Address after: 430074 Hubei city of Wuhan province East Lake New Technology Development Zone Road No. two high Guan Nan Industrial Park Building No. two West 3 floor Patentee after: MEMORIGHT (WUHAN) Co.,Ltd. Address before: 430074 Hubei city of Wuhan province Kuanshan road Optics Valley Software Park building C3 301-303 Patentee before: MEMORIGHT (WUHAN)CO.,LTD. |
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Address after: 430070 Wuhan, Hubei Wuhan East Lake New Technology Development Zone, high-tech two Road No. 1 South Guan Industrial Park 2 factory 2-3 floor West. Patentee after: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. Address before: 430074 west 3 floor, two Guan Nan Industrial Park, two new road, Wuhan, Hubei, East Lake. Patentee before: MEMORIGHT (WUHAN) Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Flash memory controller and data transmission method between flash memories Effective date of registration: 20211021 Granted publication date: 20140910 Pledgee: Bank of Hankou Limited by Share Ltd. Financial Services Center Pledgor: EXASCEND TECHNOLOGY (WUHAN) Co.,Ltd. Registration number: Y2021420000115 |
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Address after: 430000 west of 2-3 / F, No.2 factory building, Guannan Industrial Park, No.1 Gaoxin 2nd Road, Wuhan Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: Zhiyu Technology Co.,Ltd. Address before: 430070 Wuhan, Hubei Wuhan East Lake New Technology Development Zone, high-tech two Road No. 1 South Guan Industrial Park 2 factory 2-3 floor West. Patentee before: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. |
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