CN102074575B - Igbt器件结构及制备方法 - Google Patents
Igbt器件结构及制备方法 Download PDFInfo
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- CN102074575B CN102074575B CN 201010543790 CN201010543790A CN102074575B CN 102074575 B CN102074575 B CN 102074575B CN 201010543790 CN201010543790 CN 201010543790 CN 201010543790 A CN201010543790 A CN 201010543790A CN 102074575 B CN102074575 B CN 102074575B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 87
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000012535 impurity Substances 0.000 claims abstract description 31
- 229920005591 polysilicon Polymers 0.000 claims abstract description 26
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 66
- 230000005516 deep trap Effects 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 22
- 229910052698 phosphorus Inorganic materials 0.000 claims description 22
- 239000011574 phosphorus Substances 0.000 claims description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims description 22
- 239000000377 silicon dioxide Substances 0.000 claims description 22
- 229910052796 boron Inorganic materials 0.000 claims description 21
- 238000000407 epitaxy Methods 0.000 claims description 20
- 239000004411 aluminium Substances 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052785 arsenic Inorganic materials 0.000 claims description 18
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 18
- 238000001259 photo etching Methods 0.000 claims description 17
- 238000005275 alloying Methods 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 13
- 229910000838 Al alloy Inorganic materials 0.000 claims description 12
- 229910000676 Si alloy Inorganic materials 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 238000002513 implantation Methods 0.000 claims description 11
- -1 is the N-type trap Substances 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 8
- 150000003376 silicon Chemical class 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 238000000992 sputter etching Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000004913 activation Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
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Priority Applications (1)
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CN 201010543790 CN102074575B (zh) | 2010-11-15 | 2010-11-15 | Igbt器件结构及制备方法 |
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CN 201010543790 CN102074575B (zh) | 2010-11-15 | 2010-11-15 | Igbt器件结构及制备方法 |
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CN102074575A CN102074575A (zh) | 2011-05-25 |
CN102074575B true CN102074575B (zh) | 2013-09-11 |
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CN 201010543790 Active CN102074575B (zh) | 2010-11-15 | 2010-11-15 | Igbt器件结构及制备方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105895679A (zh) * | 2015-01-22 | 2016-08-24 | 肖胜安 | 一种绝缘栅双极晶体管的结构和制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1589499A (zh) * | 2001-11-20 | 2005-03-02 | 通用半导体公司 | 具有多晶硅源极接触结构的沟槽mosfet器件 |
CN1790737A (zh) * | 2004-12-15 | 2006-06-21 | 上海华虹Nec电子有限公司 | 一种igbt及其制造方法 |
CN1921146A (zh) * | 2005-08-15 | 2007-02-28 | 国际整流器公司 | 用于沟槽igbt的深n扩散 |
CN101452952A (zh) * | 2008-10-31 | 2009-06-10 | 电子科技大学 | 一种沟槽绝缘栅双极型晶体管 |
-
2010
- 2010-11-15 CN CN 201010543790 patent/CN102074575B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1589499A (zh) * | 2001-11-20 | 2005-03-02 | 通用半导体公司 | 具有多晶硅源极接触结构的沟槽mosfet器件 |
CN1790737A (zh) * | 2004-12-15 | 2006-06-21 | 上海华虹Nec电子有限公司 | 一种igbt及其制造方法 |
CN1921146A (zh) * | 2005-08-15 | 2007-02-28 | 国际整流器公司 | 用于沟槽igbt的深n扩散 |
CN101452952A (zh) * | 2008-10-31 | 2009-06-10 | 电子科技大学 | 一种沟槽绝缘栅双极型晶体管 |
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CN102074575A (zh) | 2011-05-25 |
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Address after: Jiaxing City, Zhejiang province 314050 Nanhu District Branch Road No. 988 (Jiaxing city) Applicant after: STARPOWER SEMICONDUCTOR Ltd. Address before: Jiaxing City, Zhejiang province 314006 Jiaxing City Ring Road No. 18 Sidalu Applicant before: Jiaxing Starpower Semiconductor Co.,Ltd. |
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C14 | Grant of patent or utility model | ||
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: IGBT (Insulated Gate Bipolar Translator) device structure and preparation method thereof Effective date of registration: 20151209 Granted publication date: 20130911 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2015990001099 |
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Date of cancellation: 20161212 Granted publication date: 20130911 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2015990001099 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: IGBT device structure and preparation method Effective date of registration: 20161216 Granted publication date: 20130911 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2016330000098 |
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Date of cancellation: 20180904 Granted publication date: 20130911 Pledgee: Agricultural Bank of China Limited by Share Ltd. Jiaxing science and Technology Branch Pledgor: STARPOWER SEMICONDUCTOR LTD. Registration number: 2016330000098 |
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Address after: 314050 No. 988 Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province (Jiaxing Science and Technology City) Patentee after: Star Semiconductor Co.,Ltd. Address before: 314050 No. 988 Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province (Jiaxing Science and Technology City) Patentee before: STARPOWER SEMICONDUCTOR Ltd. |