CN102044599B - Light-emitting diode (LED) - Google Patents

Light-emitting diode (LED) Download PDF

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Publication number
CN102044599B
CN102044599B CN 200910204642 CN200910204642A CN102044599B CN 102044599 B CN102044599 B CN 102044599B CN 200910204642 CN200910204642 CN 200910204642 CN 200910204642 A CN200910204642 A CN 200910204642A CN 102044599 B CN102044599 B CN 102044599B
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CN
China
Prior art keywords
light
emitting diode
hole
reflector
circuit
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200910204642
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Chinese (zh)
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CN102044599A (en
Inventor
谢忠全
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Everlight Electronics Co Ltd
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Everlight Electronics Co Ltd
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Priority to CN 200910204642 priority Critical patent/CN102044599B/en
Publication of CN102044599A publication Critical patent/CN102044599A/en
Application granted granted Critical
Publication of CN102044599B publication Critical patent/CN102044599B/en
Expired - Fee Related legal-status Critical Current
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Abstract

The invention discloses a light-emitting diode (LED), comprising an LED chip, a reflector cup, a lens, a circuit connecting board, a circuit substrate and leads, wherein the LED chip is arranged in the reflector cup, and the lens covers the reflector cup and the LED chip; the LED chip is electrically connected with the circuit connecting board which is provided with a first hole, and the circuit substrate is provided with a second hole; the leads are arranged in the first hole and the second hole and enable the circuit connecting board to be electrically connected with the circuit substrate; the reflector cup is arranged between the circuit connecting board and the circuit substrate; and the positions of the first hole and the second hole are not close to the reflector cup. In the invention, the reflector cup is not in direct contact with the circuit design position on the surface of the circuit connecting board, thus heat generated by the LED chip has no influence on the operation of the circuit connecting board, and the radiating area of the reflector cup can be kept independent. In addition, the groove body of the reflector cup is directly exposed via a containing hole, thus enhancing the radiating efficiency.

Description

Light-emitting diode
Technical field
The present invention relates to a kind of light-emitting diode, particularly a kind of encapsulating structure of light-emitting diode.
Background technology
The packaged type of light-emitting diode comprises support rack type (lamp type), base plate type (PCB type) and standard flat-head type (PLCC type).Fig. 1 is the schematic diagram of known support rack type light-emitting diode, see also Fig. 1, support rack type light-emitting diode 10 comprises lens 11, support 12a, 12b, light-emitting diode chip for backlight unit 13 and wire 14, support 12a is upper to form a reflecting part 121 with impact style, and light-emitting diode chip for backlight unit 13 is arranged in the reflecting part 121, the light that light-emitting diode chip for backlight unit 13 is produced can fully upwards be reflected, light-emitting diode chip for backlight unit 13 direct and support 12a electric connections, be electrically connected with support 12b by wire 14 in addition, lens 11 then coat whole light-emitting diode chip for backlight unit 13.Because support rack type light-emitting diode 10 can utilize impact style to form reflecting part 121, so reflecting part 121 is comparatively smooth, and better reflecting effect can be provided.Yet, support rack type light-emitting diode 10 can't be independent with heat dissipation region, it is outside to strengthen radiating effect that heat dissipation region is directly connected to, and in plug-in unit (DIP) technique, support 12a, 12b can be connected with circuit board (not shown) by bending, at this moment, may produce the problem that glue splits.In addition, because support rack type light-emitting diode 10 must keep punching press gap and die clearance, therefore can't be designed by densification ground.
Fig. 2 is the schematic diagram of known base plate type light-emitting diode, sees also Fig. 2, and base plate type light-emitting diode 20 comprises lens 21, support 22a, 22b, light-emitting diode chip for backlight unit 23, wire 24 and circuit board 25.Light-emitting diode chip for backlight unit 23 is located on the support 22a, and is electrically connected with support 22b by wire 24.Because the technique of base plate type light-emitting diode 20 can directly be finished on circuit board 25, so configuration is more intensive, base plate type light-emitting diode 20 is with cutting forming, so do not roll over the problem that pin glue splits in addition.Yet, base plate type light-emitting diode 20 can't be directly punching press reflecting part thereon, and must arrange with other processing modes, therefore can't have smooth flat, reflection efficiency is lower.In addition, the heat dissipation region dependent of base plate type light-emitting diode 20 also can't be connected directly to outside to strengthen radiating effect.
Fig. 3 is the schematic diagram of known standard flat-head type light-emitting diode, sees also Fig. 3, and standard flat-head type light-emitting diode 30 comprises lens 31, support 32a, 32b, light-emitting diode chip for backlight unit 33, wire 34, circuit board 35 and reflector 36.Light-emitting diode chip for backlight unit 33 is located on the support 32a, and by wire 34 light-emitting diode chip for backlight unit 33 and support 32b is electrically connected.Standard flat-head type light-emitting diode 30 can be selected plastic cement or reflector, and heat dissipation region is independence and is connected directly to outside to increase radiating effect, in addition, standard flat-head type light-emitting diode 30 is to roll over first pin just to encapsulate action, does not therefore have the problem that glue splits.Yet standard flat-head type light-emitting diode 30 must utilize gluing process, therefore can't be arranged thick and fast, and in addition, because the relation of folding pin and ejaculation difficulty, standard flat-head type light-emitting diode 30 can't miniaturization and slimming.
See also again the structure of the surface adhesion type light-emitting diode of No. the 560697th, TaiWan, China patent, this known light-emitting diode directly is placed in reflector in the circuit board, and light-emitting diode chip for backlight unit is arranged on the reflector, therefore, the heat of light-emitting diode can directly be passed to reflector, again via reflector heat conduction to circuit board, make the heat dissipation region can't be independent, and excessive heat energy also may cause the damage of circuit board.
Summary of the invention
For overcoming the defective of prior art, the invention provides a kind of light-emitting diode, comprise light-emitting diode chip for backlight unit, lens, reflector, circuit connecting plate, circuit substrate and wire.Light-emitting diode chip for backlight unit is arranged in the reflector, and lens cap is located on reflector and the light-emitting diode chip for backlight unit.Light-emitting diode chip for backlight unit and circuit connecting plate are electrically connected, and circuit connecting plate also comprises the first hole, circuit substrate also comprises the second hole, wire is located in the first hole and the second hole, and circuit connecting plate and circuit substrate are electrically connected, reflector is located between circuit connecting plate and the circuit substrate, and reflector is avoided in the position of the first hole and the second hole.
It should be noted that reflector is metal material.
It should be noted that reflector comprises cell body and flange, flange stretches out along the edge of cell body.
It should be noted that circuit substrate also comprises a containing hole, reflector is arranged in the containing hole, and makes the reflector location by flange.
It should be noted that the shape of flange is roughly toroidal.
It should be noted that light-emitting diode also comprises the first insulating barrier, the first insulating barrier and flange are located on the same plane, and coat flange by side.
It should be noted that the first insulating barrier is the insulation material.
It should be noted that the first insulating barrier also comprises the 3rd hole, corresponding the first hole in the position of the 3rd hole and the second hole.
It should be noted that light-emitting diode also comprises the second insulating barrier, the second insulating barrier is located between the first insulating barrier and the circuit substrate.
It should be noted that the second insulating barrier is the insulation material.
It should be noted that the second insulating barrier also comprises the 4th hole, corresponding the first hole in the position of the 4th hole and the second hole.
It should be noted that lens are hemisphere.
It should be noted that circuit substrate also comprises lower surface, on lower surface, do circuit design.
It should be noted that circuit connecting plate also comprises upper surface, on upper surface, do circuit design.
In the present invention, reflector can't directly contact with the circuit design place of circuit connecting plate upper surface, and therefore, the heat that light-emitting diode chip for backlight unit produces can not have influence on the running of circuit connecting plate, and it is independent that the heat dissipation region of reflector can keep.In addition, the cell body of reflector directly exposes to the outside by containing hole, can increase radiating efficiency, and the structural design of light-emitting diode of the present invention can directly be carried out technique at circuit substrate, does not therefore also roll over the problem that pin glue splits.
Description of drawings
Fig. 1 is the schematic diagram of known support rack type light-emitting diode;
Fig. 2 is the schematic diagram of known base plate type light-emitting diode;
Fig. 3 is the schematic diagram of known standard flat-head type light-emitting diode;
Fig. 4 is the decomposing schematic representation of light-emitting diode of the present invention:
Fig. 5 is that schematic diagram is finished in the encapsulation of light-emitting diode of the present invention; And
Fig. 6 is another visual angle schematic diagram of light-emitting diode of the present invention.
And the description of reference numerals in the above-mentioned accompanying drawing is as follows:
Known technology
10 support rack type light-emitting diodes
11,21,31 lens
12a, 12b, 22a, 22b, 32a, 32b support
13,23,33 light-emitting diode chip for backlight unit
14,24,34 wires
25,35 circuit boards
20 base plate type light-emitting diodes
30 standard flat-head type light-emitting diodes
36 reflectors
The present invention
40 light-emitting diodes
41 light-emitting diode chip for backlight unit
411,412 wires
42 lens
43 reflectors
431 cell bodies
432 flanges
44 circuit connecting plates
441 first holes
442 upper surfaces
45 circuit substrates
451 second holes
452 containing holes
453 lower surfaces
46 wires
47 first insulating barriers
471 the 3rd holes
48 second insulating barriers
481 the 4th holes
482 containing holes
Embodiment
Fig. 4 is the decomposing schematic representation of light-emitting diode of the present invention, and Fig. 5 is that schematic diagram is finished in the encapsulation of light-emitting diode of the present invention, and Fig. 6 is another visual angle schematic diagram of light-emitting diode of the present invention.
See also Fig. 4-Fig. 6, light-emitting diode 40 comprises light-emitting diode chip for backlight unit 41, lens 42, reflector 43, circuit connecting plate 44, circuit substrate 45 and wire 46.Light-emitting diode chip for backlight unit 41 comprises two wires 411,412, wire 411,412 are electrically connected with light-emitting diode chip for backlight unit 41, lens 42 are located on light-emitting diode chip for backlight unit 41 and the reflector 43, in order to change the path of light-emitting diode chip for backlight unit 41 emitted lights, reflector 43 is in order to accommodating light-emitting diode chip for backlight unit 41 and reflect light-emitting diode chip for backlight unit 41 emitted lights, circuit connecting plate 44 comprises the first hole 441, and wire 411,412 are electrically connected with circuit connecting plate 44, circuit substrate 45 comprises the second hole 451, wire 46 is located in the first hole 441 and the second hole 451, and circuit connecting plate 44 and circuit substrate 45 are electrically connected.And reflector 43 is located between circuit connecting plate 44 and the circuit substrate 45, and the setting position of the first hole 441 and the second hole 451 avoids reflector 43, and is independent to keep heat dissipation region.
Circuit substrate 45 also comprises containing hole 452, and reflector 43 is arranged in the containing hole 452, and reflector 43 comprises cell body 431 and flange 432, and cell body 431 can accommodating light-emitting diode chip for backlight unit 41, and flange 432 stretches out along the edge of cell body 431.Wherein, the shape of flange 432 is roughly toroidal, and the diameter of this flange 432 need be greater than the diameter of containing hole 452, by flange 432 reflector 43 is positioned on the circuit substrate 45.
In addition, light-emitting diode 40 also can comprise the first insulating barrier 47 and the second insulating barrier 48.In present embodiment, the first insulating barrier 47 quantity are two, and roughly are arcuate in shape, and are located on the same plane with flange 432, coat flange 432 by side.And the second insulating barrier 48 is located between the first insulating barrier 47 and the circuit substrate 45, containing hole 452 place's correspondences of the second insulating barrier 48 corresponding circuits substrates 45 are provided with containing hole 482, make the cell body 431 of reflector 43 can pass through containing hole 452,482, and utilize flange 432 that reflector 43 is set up on the second insulating barrier 48 and the circuit substrate 45.
The first insulating barrier 47 also comprises corresponding the first hole 441 in the position of the 3rd hole 471, the three holes 471 and the second hole 451.The second insulating barrier 48 also comprises corresponding the first hole 441 in the position of the 4th hole 481, the four holes 481 and the second hole 451.When wire 46 connecting circuit connecting plates 44 and circuit substrate 45, also can pass through the 3rd hole 471 and the 4th hole 481.
It should be noted that reflector 43 is metal material, and the first insulating barrier 47 and the second insulating barrier 48 are the insulation material, lens 42 for hemisphere and cover reflector 43 and light-emitting diode chip for backlight unit 41 on.In addition, can consult Fig. 6, circuit substrate 45 also comprises lower surface 453, present embodiment is done circuit design on lower surface 453, and can find out among Fig. 4, circuit connecting plate 44 also comprises upper surface 442, and present embodiment is done circuit design on upper surface 442, can keep independent when making reflector 43 as heat dissipation region.
Can arrange in pairs or groups and consult Fig. 4 and Fig. 5, light-emitting diode chip for backlight unit 41 is located in the cell body 431 of reflector 43, and reflector 43 can be made with impact style in advance, therefore has smooth flat, light-emitting diode chip for backlight unit 41 can be concentrated upwards reflection with light by reflector 43, to improve luminous efficiency.Because light-emitting diode chip for backlight unit 41 is located on the reflector 43, so the heat that light-emitting diode chip for backlight unit 41 produces can conduct to reflector 43.And reflector 43 belows are provided with the second insulating barrier 48 made from insulating material, side is provided with the first insulating barrier 47 made from insulating material and coats, in addition, the circuit design of circuit connecting plate 44 also is positioned at the upper surface 442 of circuit connecting plate 44, so reflector 43 can't directly contact with the circuit design place of circuit connecting plate 44 upper surfaces 442, therefore, the heat that light-emitting diode chip for backlight unit 41 produces can not have influence on the running of circuit connecting plate 44, and it is independent that the heat dissipation region of reflector 43 can keep.In addition, the cell body 431 of reflector 43 directly exposes to the outside by containing hole 452, can increase radiating efficiency, and the structural design of light-emitting diode of the present invention 40 can directly be carried out technique at circuit substrate 45, does not therefore also roll over the problem that pin glue splits.
The above, it only is preferred embodiment of the present invention, when not limiting scope of the invention process with this, the simple equivalence of namely generally doing according to claim of the present invention and invention description content changes and modifies, and all still belongs in the scope that patent of the present invention contains.Arbitrary embodiment of the present invention or claim must not reached whole purpose disclosed in this invention or advantage or characteristics in addition.In addition, summary part and title only are the usefulness of auxiliary patent document search, are not to limit interest field of the present invention.

Claims (12)

1. light-emitting diode comprises:
One light-emitting diode chip for backlight unit;
One reflector comprises a cell body and a flange, and this flange stretches out along the edge of this cell body, and wherein this light-emitting diode chip for backlight unit is arranged in this reflector;
One lens are located on this reflector and this light-emitting diode chip for backlight unit;
One circuit connecting plate comprises one first hole, and this chip and this circuit connecting plate are electrically connected;
One circuit substrate, in order to carry this reflector, this circuit substrate also comprises one second hole; And
One conducting element, this conducting element are located in this first hole and this second hole, and this circuit connecting plate and this circuit substrate are electrically conducted;
Wherein, this reflector is located between this circuit connecting plate and this circuit substrate, in order to isolate this circuit connecting plate and this circuit substrate;
Wherein this circuit substrate also comprises a containing hole, and this reflector is arranged in this containing hole, and makes this reflector location by this flange.
2. light-emitting diode as claimed in claim 1, wherein this reflector is metal material.
3. light-emitting diode as claimed in claim 1, wherein this cell body reflects the light that this chip is launched, and this light penetrates via these lens.
4. light-emitting diode as claimed in claim 1, wherein the shape of this flange is roughly toroidal.
5. light-emitting diode as claimed in claim 1, it also comprises one first insulating barrier, this first insulating barrier and this flange are located on the same plane.
6. light-emitting diode as claimed in claim 5, wherein this first insulating barrier also comprises and is formed with an opening, and the flange of this reflector is closely against this opening.
7. light-emitting diode as claimed in claim 5, wherein this first insulating barrier also comprises one the 3rd hole, the 3rd hole correspondence is arranged at this first hole and this second hole.
8. light-emitting diode as claimed in claim 5, it also comprises one second insulating barrier, is arranged between this first insulating barrier and this circuit substrate.
9. light-emitting diode as claimed in claim 8, wherein this second insulating barrier also comprises one the 4th hole, the 4th hole correspondence is arranged at this first hole and this second hole.
10. light-emitting diode as claimed in claim 1, wherein these lens are hemisphere.
11. light-emitting diode as claimed in claim 1, wherein this circuit substrate also comprises a lower surface, does circuit design on this lower surface.
12. light-emitting diode as claimed in claim 1, wherein this circuit connecting plate also comprises a upper surface, does circuit design on this upper surface.
CN 200910204642 2009-10-10 2009-10-10 Light-emitting diode (LED) Expired - Fee Related CN102044599B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200910204642 CN102044599B (en) 2009-10-10 2009-10-10 Light-emitting diode (LED)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200910204642 CN102044599B (en) 2009-10-10 2009-10-10 Light-emitting diode (LED)

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CN102044599A CN102044599A (en) 2011-05-04
CN102044599B true CN102044599B (en) 2013-04-17

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105047797A (en) * 2015-09-17 2015-11-11 深圳成光兴光电技术股份有限公司 SMD LED packaging structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1355571A (en) * 2000-11-23 2002-06-26 诠兴开发科技股份有限公司 Packaging method for LED
CN1538538A (en) * 2003-04-09 2004-10-20 �����ǵ��ӹɷ����޹�˾ LED lamp
CN2720646Y (en) * 2004-07-29 2005-08-24 亿光电子工业股份有限公司 High-power light emitting diode package structure
CN101064260A (en) * 2006-04-26 2007-10-31 碁成科技股份有限公司 Package manufacture process for power chip

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW594950B (en) * 2003-03-18 2004-06-21 United Epitaxy Co Ltd Light emitting diode and package scheme and method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1355571A (en) * 2000-11-23 2002-06-26 诠兴开发科技股份有限公司 Packaging method for LED
CN1538538A (en) * 2003-04-09 2004-10-20 �����ǵ��ӹɷ����޹�˾ LED lamp
CN2720646Y (en) * 2004-07-29 2005-08-24 亿光电子工业股份有限公司 High-power light emitting diode package structure
CN101064260A (en) * 2006-04-26 2007-10-31 碁成科技股份有限公司 Package manufacture process for power chip

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