CN101783181B - 存储器装置及存储器存取方法 - Google Patents
存储器装置及存储器存取方法 Download PDFInfo
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- CN101783181B CN101783181B CN201010005538.3A CN201010005538A CN101783181B CN 101783181 B CN101783181 B CN 101783181B CN 201010005538 A CN201010005538 A CN 201010005538A CN 101783181 B CN101783181 B CN 101783181B
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
Landscapes
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
- Programmable Controllers (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-006703 | 2009-01-15 | ||
JP2009006703A JP5328020B2 (ja) | 2009-01-15 | 2009-01-15 | メモリ装置及びメモリアクセス方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101783181A CN101783181A (zh) | 2010-07-21 |
CN101783181B true CN101783181B (zh) | 2014-12-17 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010005538.3A Active CN101783181B (zh) | 2009-01-15 | 2010-01-15 | 存储器装置及存储器存取方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8335098B2 (zh) |
JP (1) | JP5328020B2 (zh) |
KR (1) | KR101466420B1 (zh) |
CN (1) | CN101783181B (zh) |
TW (1) | TWI470429B (zh) |
Families Citing this family (34)
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JP5328020B2 (ja) * | 2009-01-15 | 2013-10-30 | セイコーインスツル株式会社 | メモリ装置及びメモリアクセス方法 |
JP5347649B2 (ja) * | 2009-03-30 | 2013-11-20 | 凸版印刷株式会社 | 不揮発性半導体メモリ装置 |
JP2010231872A (ja) * | 2009-03-30 | 2010-10-14 | Toppan Printing Co Ltd | 不揮発性半導体メモリ装置 |
US10229746B2 (en) | 2010-08-20 | 2019-03-12 | Attopsemi Technology Co., Ltd | OTP memory with high data security |
US9711237B2 (en) | 2010-08-20 | 2017-07-18 | Attopsemi Technology Co., Ltd. | Method and structure for reliable electrical fuse programming |
US10249379B2 (en) | 2010-08-20 | 2019-04-02 | Attopsemi Technology Co., Ltd | One-time programmable devices having program selector for electrical fuses with extended area |
US10923204B2 (en) | 2010-08-20 | 2021-02-16 | Attopsemi Technology Co., Ltd | Fully testible OTP memory |
US9070437B2 (en) | 2010-08-20 | 2015-06-30 | Shine C. Chung | Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink |
US9818478B2 (en) | 2012-12-07 | 2017-11-14 | Attopsemi Technology Co., Ltd | Programmable resistive device and memory using diode as selector |
US9824768B2 (en) * | 2015-03-22 | 2017-11-21 | Attopsemi Technology Co., Ltd | Integrated OTP memory for providing MTP memory |
US10916317B2 (en) | 2010-08-20 | 2021-02-09 | Attopsemi Technology Co., Ltd | Programmable resistance memory on thin film transistor technology |
US8848423B2 (en) | 2011-02-14 | 2014-09-30 | Shine C. Chung | Circuit and system of using FinFET for building programmable resistive devices |
US10192615B2 (en) | 2011-02-14 | 2019-01-29 | Attopsemi Technology Co., Ltd | One-time programmable devices having a semiconductor fin structure with a divided active region |
US10586832B2 (en) | 2011-02-14 | 2020-03-10 | Attopsemi Technology Co., Ltd | One-time programmable devices using gate-all-around structures |
TWI435217B (zh) * | 2011-02-16 | 2014-04-21 | Pixart Imaging Inc | 可程式化記憶體及其寫入和讀取方法 |
CN102646452B (zh) * | 2011-02-22 | 2016-01-20 | 原相科技股份有限公司 | 可编程存储器及其写入和读取方法 |
JP6035760B2 (ja) * | 2012-02-07 | 2016-11-30 | セイコーエプソン株式会社 | 半導体記憶装置及び半導体記憶装置の制御方法 |
KR102009655B1 (ko) * | 2012-08-29 | 2019-08-13 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치에서의 에러 검출 방법 |
US9508396B2 (en) * | 2014-04-02 | 2016-11-29 | Ememory Technology Inc. | Array structure of single-ploy nonvolatile memory |
KR20150123378A (ko) * | 2014-04-24 | 2015-11-04 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그의 동작 방법 |
US10181357B2 (en) * | 2015-08-18 | 2019-01-15 | Ememory Technology Inc. | Code generating apparatus and one time programming block |
CN106295414B (zh) * | 2016-08-09 | 2020-05-12 | 复旦大学 | 带分区写保护和保护位置乱处理的非挥发存储器及其写操作方法 |
CN106782660A (zh) * | 2016-11-28 | 2017-05-31 | 湖南国科微电子股份有限公司 | 片上***芯片过烧写保护方法及片上***芯片 |
US10726914B2 (en) | 2017-04-14 | 2020-07-28 | Attopsemi Technology Co. Ltd | Programmable resistive memories with low power read operation and novel sensing scheme |
US10535413B2 (en) | 2017-04-14 | 2020-01-14 | Attopsemi Technology Co., Ltd | Low power read operation for programmable resistive memories |
US11062786B2 (en) | 2017-04-14 | 2021-07-13 | Attopsemi Technology Co., Ltd | One-time programmable memories with low power read operation and novel sensing scheme |
US11615859B2 (en) | 2017-04-14 | 2023-03-28 | Attopsemi Technology Co., Ltd | One-time programmable memories with ultra-low power read operation and novel sensing scheme |
US10770160B2 (en) | 2017-11-30 | 2020-09-08 | Attopsemi Technology Co., Ltd | Programmable resistive memory formed by bit slices from a standard cell library |
US11164642B1 (en) | 2018-02-09 | 2021-11-02 | Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama In Huntsville | Systems and methods for hardening flash memory to radiation |
US11620108B1 (en) | 2018-05-17 | 2023-04-04 | Board Of Trustees Of The University Of Alabama For And On Behalf Of The University Of Alabama In Huntsville | Random number generation systems and methods |
KR102559380B1 (ko) * | 2018-08-08 | 2023-07-26 | 삼성디스플레이 주식회사 | 검사 시스템, 이의 멀티 타임 프로그래밍 방법 및 표시 장치 |
US11101009B1 (en) * | 2019-03-04 | 2021-08-24 | Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama In Huntsville | Systems and methods to convert memory to one-time programmable memory |
TWI715371B (zh) * | 2019-12-25 | 2021-01-01 | 新唐科技股份有限公司 | 一次性可編程記憶體裝置及其容錯方法 |
US20240220320A1 (en) * | 2022-12-30 | 2024-07-04 | Advanced Micro Devices, Inc. | Systems and methods for sharing memory across clusters of directly connected nodes |
Citations (2)
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CN1866400A (zh) * | 2005-05-19 | 2006-11-22 | 力旺电子股份有限公司 | 存取存储器的方法 |
CN101315906A (zh) * | 2007-05-31 | 2008-12-03 | 和舰科技(苏州)有限公司 | 一次可编程存储器的结构及其制造方法 |
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JPS6045994A (ja) * | 1983-08-22 | 1985-03-12 | Tokyo Electric Co Ltd | Promによる情報記憶方法 |
JPH11259359A (ja) * | 1998-03-11 | 1999-09-24 | Kokusai Electric Co Ltd | ワンタイムromアクセス方法 |
JP4040215B2 (ja) * | 1999-07-19 | 2008-01-30 | 株式会社東芝 | 不揮発性半導体メモリの制御方法 |
JP3918434B2 (ja) * | 2001-01-05 | 2007-05-23 | セイコーエプソン株式会社 | 情報処理装置 |
US7003619B1 (en) * | 2001-04-09 | 2006-02-21 | Matrix Semiconductor, Inc. | Memory device and method for storing and reading a file system structure in a write-once memory array |
US6728137B1 (en) | 2003-04-29 | 2004-04-27 | Ememory Technology Inc. | Method for programming and reading a plurality of one-time programmable memory blocks |
JP2005149617A (ja) * | 2003-11-14 | 2005-06-09 | Sony Corp | 不揮発性半導体メモリ装置およびその動作方法 |
JP4129453B2 (ja) * | 2004-12-01 | 2008-08-06 | 株式会社東芝 | 半導体記憶装置、半導体記憶装置の動作方法および半導体記憶装置のテスト方法 |
KR100732628B1 (ko) * | 2005-07-28 | 2007-06-27 | 삼성전자주식회사 | 멀티-비트 데이터 및 싱글-비트 데이터를 저장하는 플래시메모리 장치 |
US8242908B2 (en) * | 2005-12-09 | 2012-08-14 | Tego Inc. | Methods and systems of a multiple radio frequency network node RFID tag |
TW200727303A (en) * | 2006-01-08 | 2007-07-16 | Ememory Technology Inc | A method and memory capable of improving the endurance of memory |
JP5028967B2 (ja) * | 2006-11-15 | 2012-09-19 | 富士通セミコンダクター株式会社 | 半導体記憶装置および半導体記憶装置の制御方法 |
US8275927B2 (en) * | 2007-12-31 | 2012-09-25 | Sandisk 3D Llc | Storage sub-system for a computer comprising write-once memory devices and write-many memory devices and related method |
JP5328020B2 (ja) * | 2009-01-15 | 2013-10-30 | セイコーインスツル株式会社 | メモリ装置及びメモリアクセス方法 |
-
2009
- 2009-01-15 JP JP2009006703A patent/JP5328020B2/ja active Active
-
2010
- 2010-01-13 TW TW99100815A patent/TWI470429B/zh active
- 2010-01-14 US US12/687,630 patent/US8335098B2/en active Active
- 2010-01-15 CN CN201010005538.3A patent/CN101783181B/zh active Active
- 2010-01-15 KR KR1020100003790A patent/KR101466420B1/ko active IP Right Grant
-
2012
- 2012-01-25 US US13/357,712 patent/US8553443B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1866400A (zh) * | 2005-05-19 | 2006-11-22 | 力旺电子股份有限公司 | 存取存储器的方法 |
CN101315906A (zh) * | 2007-05-31 | 2008-12-03 | 和舰科技(苏州)有限公司 | 一次可编程存储器的结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101783181A (zh) | 2010-07-21 |
US20120163062A1 (en) | 2012-06-28 |
TW201102814A (en) | 2011-01-16 |
US8335098B2 (en) | 2012-12-18 |
US20100177547A1 (en) | 2010-07-15 |
US8553443B2 (en) | 2013-10-08 |
TWI470429B (zh) | 2015-01-21 |
JP2010165165A (ja) | 2010-07-29 |
KR20100084132A (ko) | 2010-07-23 |
JP5328020B2 (ja) | 2013-10-30 |
KR101466420B1 (ko) | 2014-11-28 |
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Effective date of registration: 20160323 Address after: Chiba County, Japan Patentee after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
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