CN101748319A - Electron-irradiation resisting shielding material and method for preparing same - Google Patents

Electron-irradiation resisting shielding material and method for preparing same Download PDF

Info

Publication number
CN101748319A
CN101748319A CN200810239845A CN200810239845A CN101748319A CN 101748319 A CN101748319 A CN 101748319A CN 200810239845 A CN200810239845 A CN 200810239845A CN 200810239845 A CN200810239845 A CN 200810239845A CN 101748319 A CN101748319 A CN 101748319A
Authority
CN
China
Prior art keywords
aln
electron
shielding material
irradiation
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200810239845A
Other languages
Chinese (zh)
Inventor
杨志民
毛昌辉
杜军
杨剑
董桂霞
马书旺
罗君
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing General Research Institute for Non Ferrous Metals
Original Assignee
Beijing General Research Institute for Non Ferrous Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing General Research Institute for Non Ferrous Metals filed Critical Beijing General Research Institute for Non Ferrous Metals
Priority to CN200810239845A priority Critical patent/CN101748319A/en
Publication of CN101748319A publication Critical patent/CN101748319A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention relates to electron-irradiation resisting shielding material and a method for preparing the same. The electron-irradiation resisting shielding material comprises 15-35 percent by volume of Mo or W and 65-85 percent by volume of AlN, wherein the Mo or W is used as the high Z metallic phase, and the AlN is used as the Z dielectric phase. The insulating high-energy electron-irradiation resisting shielding material has higher shielding efficiency than the high atomic number metal such as tantalum, tungsten and lead, has high thermal conductivity, can reduce the dosage of the electron-irradiation deposition agent by over two orders of magnitude without destroying the original radiating condition of the components and can ensure that the temperature of the chip meet the normal work requirement when the components are working.

Description

A kind of electron-irradiation resisting shielding material and preparation method thereof
Technical field
The present invention relates to a kind of electron-irradiation resisting shielding material and preparation method, belong to the shielding material field.
Background technology
Work in the electron device under the radiation environment, as Si MOS device, all have certain irradiation energy deposition threshold value, after energy deposition that irradiation causes surpassed this threshold value, device performance can worsen or lose efficacy.As the electron device of the man-made satellite that is applied to, meet with the radiation of various space charged particles inevitably, charged particle and electronic devices and components interact, produce various Space Radiation Effects, exceed the threshold value of device when deposit dose after, electron device inefficacy meeting causes to a certain degree damage and harm to satellite, even threatens safety satellite.At these radiosensitive devices, the shielding material (as tantalum etc.) that employing has the certain mass area density shields device, can make total radiation dose acquisition decay and reduction to a certain degree, the total radiation dose of the actual acceptance of electron device is dropped under himself radioprotective total dose level, thereby prolong the work-ing life of electronic devices and components, as shown in Figure 1, wherein 11 represent the radio-protective covers, 12 expression susceptible device susceptores.
Electronics and material effect mainly contain three kinds of processes: the electronics generation inelastical scattering in (1) electronics and the atom makes material ionization.Under the identical situation of area density, electron energy loss and Z/A be directly proportional (A is a nucleidic mass).The Z/A of Ta is 0.4, and Al's is 0.48, low Z material make aspect the incident electron inelastical scattering more effective than high Z material.(2) electronics and nucleus generation elastic scattering, under the identical situation of material face density, elastic scattering intensity and Z2/A are directly proportional, and therefore high Z material is more effective to the elastic scattering of electronics.(3) electronics and nucleus inelastical scattering discharge the bremsstrahlung photon.The bremsstrahlung rate of energy loss is directly proportional with the Z2/A of material, is directly proportional with the energy of electronics.Bremsstrahlung takes place and produces X ray in electron-bombardment heavy element material easily, and it is much more difficult to compare the shielding of electronics itself to the shielding of X ray.These three kinds of processes have determined the complicacy of shielding high-energy electron, and the material that uses height Z to combine might be realized high shielding efficiency.
The material that is used for the irradiation shielding at present is generally the material of high atomic numbers such as tantalum, lead, tungsten, though can play the effect that good prevention charged particle sees through, the energy of produced simultaneously bremsstrahlung is also very big, causes shield effectiveness to be subjected to certain restriction.
Summary of the invention
One of purpose of the present invention is to provide a kind of have high shielding efficiency, high thermal conductivity, insulating high energy electron-irradiation resisting shielding material.
Above-mentioned purpose of the present invention is achieved through the following technical solutions:
A kind of electron-irradiation resisting shielding material is characterized in that: described electron-irradiation resisting shielding material comprises Mo or W as high Z metallographic phase, and its amount is 15-35vol.%; AlN is 85-65vol.% for low Z medium phase, its amount.
A kind of optimal technical scheme is characterized in that: described electron-irradiation resisting shielding material is a single layer structure, and described high Z metallographic phase is distributed among the low Z medium phase equably, is separated from each other between the particle in the described high Z metallographic phase, can not form continuous net-shaped structure.
A kind of optimal technical scheme, it is characterized in that: described electron-irradiation resisting shielding material is a multi-layer compound structure, described multi-layer compound structure is formed by a plurality of single layer structure stacks, the content of high Z metallographic phase Mo or W is 5-85vol.% in the single layer structure, and the content of low Z medium phase AlN is 95-15vol.%; Each single layer structure is high Z metallographic phase and is distributed in equably among the low Z medium phase AlN.For whole material, the amount of high Z metallographic phase is 15-35vol.%; The content of AlN is 85-65vol.%.At different monoenergetic incident electron energy or energy distribution spectral line, multilayer materials stack order, every layer composition and thickness all can be adjusted.
A kind of optimal technical scheme is characterized in that: described single or multiple lift electron-irradiation resisting shielding material also comprises CaF 2Or Y 2O 3Sintering aid, the content of this sintering aid are high Z metallographic phase and the low Z medium 3-8% of cumulative volume mutually.
Another object of the present invention provides the preparation method of above-mentioned electron-irradiation resisting shielding material, is achieved through the following technical solutions:
A kind of preparation method of individual layer electron-irradiation resisting shielding material, its step is as follows:
(1) with the Mo of 15-35vol.% or W as high Z metallographic phase, the AlN of 85-65vol.% is low Z medium phase, uses the method for ball milling to carry out thorough mixing;
(2) it is molded to carry out 3-5MPa * 1-5min one-way shaft earlier, carries out 200MPa * 15min cold isostatic compaction then, obtains Mo (W)-AlN compound green compact;
(3) step (2) gained compound green compact is placed ZrO 2Or it is normal pressure-sintered to carry out under the nitrogen atmosphere 1650-1900 ℃, 1-3h in the AlN crucible, perhaps at 1550 ℃ of-1800 ℃ of hot pressed sinterings, obtains Mo (W)-AlN composite block material;
(4) shape and size during by concrete use are processed with step (3) gained block materials, promptly obtain the individual layer electron-irradiation resisting shielding material.
A kind of preparation method of multilayer electron-irradiation resisting shielding material, its step is as follows:
(1) with the Mo of 5-85vol.% or W as high Z metallographic phase, the AlN of 15-95vol.% is low Z medium phase, uses the method for ball milling to carry out thorough mixing, is prepared into the slurry that contains different high Z metallographic phase ratios;
(2) use flow casting molding mechanism to be equipped with biscuit, biscuit thickness is 0.04mm-0.mm;
(3) biscuit is successively superposeed compacting, wherein the content of the high Z metallographic phase of outermost layer biscuit is lower than 25%, to guarantee the insulativity of material; Then at 1800 ℃, N 2Normal pressure-sintered in the atmosphere, obtain block materials;
(4) shape and size during by concrete use are processed with step (3) gained block materials, promptly obtain the multilayer materials of electron-irradiation resisting shielding.
A kind of optimal technical scheme is characterized in that: among the preparation method of described single or multiple lift electron-irradiation resisting shielding material, the single or multiple lift electron-irradiation resisting shielding material also comprises CaF 2Or Y 2O 3Sintering aid, the content of this sintering aid are high Z metallographic phase and the low Z medium 3-8% of cumulative volume mutually.
A kind of optimal technical scheme is characterized in that: among the preparation method of described single or multiple lift electron-irradiation resisting shielding material, the mean particle size of metal-powder is the 1-20 micron in the high Z metallographic phase; The 3-5 micron is best; The described low Z medium mean particle size of middle AlN powder mutually is 0.15 micron, and the 2-3 micron is best.Because the density and the low Z density of medium of metallographic phase differ greatly, such size-grade distribution helps the uniform mixing of matrix material, thereby realizes that high Z metallographic phase is distributed among the low Z medium phase equably, helps the raising of shielding properties.
Beneficial effect:
1, the method that adopts high and low ordination number metallic substance to combine, the material of preparation has better shield effectiveness to electronics.
The shielding material of low atomic number (as metal A l) can effectively reduce the movement velocity of charged particle though can not stop charged particle to see through; And the shielding material of high atomic number (as metal Ta) be though can play the effect that good prevention charged particle sees through, and the energy of produced simultaneously bremsstrahlung is also very big.So should make full use of high and low atomic number material advantage separately, therefore under the situation of identical faces density, the shielding properties of shielding material is better.
2, the low atomic number material adopts the AlN with high heat conductance, and is little to the influence of original heat-conductive characteristic of device or cabinet.
3, shielding material pbz polymer is not exitted under high vacuum, does not produce any fifth wheel in equipment, and can process easily.
4, shielding material has good insulation performance performance (between shielding material and the printed circuit board, between shielding material and the components and parts pipe leg).
Nitrogen among the AlN among the present invention and aluminium can effectively reduce the movement velocity of charged particle, reduce the bremsstrahlung that produces in the material.At different monoenergetic incident electron energy or energy distribution spectral line, both ratios in the time of can going out to reach best shield effectiveness by analog calculation.In the shielding material involved in the present invention, high Z metallographic phase is distributed among the AlN matrix equably, is separated from each other between the high Z metallic particles, can not form continuous net-shaped structure, to guarantee the insulativity and the high thermal conductivity of matrix material.Add CaF 2Or Y 2O 3Sintering aid can obtain the dense sintering body of high thermal conductivity.
Electron-irradiation resisting shielding material of the present invention has high shielding efficiency, high thermal conductivity, good insulating, this material has than the higher shielding efficiency of high atomic number metal (tantalum, tungsten, lead etc.), can make the electron irradiation deposit dose reduce by two more than the order of magnitude, and do not destroy the original radiating condition of components and parts, the temperature of chip satisfies the requirement of works better when guaranteeing components and parts work.
The present invention will be further described below by the drawings and specific embodiments, but and do not mean that limiting the scope of the invention.
Description of drawings
Fig. 1 is that anti-screening of nucleus material of the present invention uses synoptic diagram;
Fig. 2 is a shielding properties test synoptic diagram of the present invention;
Fig. 3 is the structural representation of the microtexture of the embodiment of the invention 1 composite shielding material;
Fig. 4 is the comparison of composite shielding material in the embodiment of the invention 1 and Ta, W metal pair 4MeV screening of nucleus performance;
Fig. 5 is the structural representation of the microtexture of shielding material in the embodiment of the invention 2.
Embodiment
Embodiment 1
By 75vol.%AlN (mean particle size is 3 microns), 25vol.%W (mean particle size is 5 microns), and account for the CaF of AlN and W cumulative volume 3vol.% 2Batching, starting powder adopt agate jar and zirconia ball, are grinding medium with the dehydrated alcohol, and according to ratio of grinding media to material 4: 1 batch mixing 24 hours on the high-energy planetary ball mill machine, rotating speed is 125 rev/mins.With after the mixed powder slurry drying screening, powder filled in mould with what sneak out, it is molded to carry out 3MPa * 5min one-way shaft, carries out 200MPa * 15min cold isostatic compaction then, obtains Mo (W)-AlN compound green compact; Compound green compact is placed ZrO 2Carry out under the nitrogen atmosphere in the crucible, carry out 30MPa * 30min hot pressed sintering, obtain composite block material, require to be processed into required standard model according to difference then at 1800 ℃.
Adopt BRIGHT A100 numeral metaloscope, S-4800 type field emission scanning electron microscope to observe the microstructure of matrix material; Adopt the granularity of JL-1166 type fully-automatic laser particle size analyzer test powders raw material; Adopt XD-2 type X-ray diffractometer that Mo (W)-AlN complex phase ceramic is carried out material phase analysis; Adopt the microwave attenuation performance of Agilent 8722ET type network analyzer test Mo (W)-AlN matrix material; Adopt the thermal conductivity of the Japanese vacuum science and engineering TC-7000Laser Flash Thermal Constant Analyzer of Co., Ltd. tester test Mo (W)-AlN matrix material.Adopt the film dosimeter method to come the shield effectiveness of test compound material, as shown in Figure 2, wherein 21 represent electronics, 22 expression samples, 23 expression quantifiers, 24 expression bases.Use CARY-3E type ultraviolet-visible spectrophotometer to analyze the absorbance of quantimeter, what film dosimeter used is plain (CTA) film dosimeter of FJ-01 type three acetic acid dimension.
Sample is carried out performance test, and the relative density that records sample is 99.9%, and the thermal conductivity under the room temperature condition is 101.5W/ (mK), and the resistivity of 10K is 1.2X10 9Ω cm, its microscopic appearance shows, is distributed among the AlN matrix metallograph of its microtexture of Fig. 3 to spheric W uniform particles.
Matrix material, Ta, W are to the shield effectiveness test curve of 4MeV monoenergetic electrons as shown in Figure 4.With the increase of shielding material area density, deposit dose slowly rises earlier as can be seen, descends fast then, slowly descends at last.The dosage depth curve of W, Ta overlaps substantially, is to intersect with the dosage depth curve of Al in 2.25 o'clock in area density.As shown in Figure 4, area density was less than 2.25 o'clock, and the shield effectiveness of W, Ta is better than matrix material, and area density was greater than 2.25 o'clock, and the shield effectiveness of matrix material is better, when area density reaches 3g/cm 2When above, the dose value after W or the Ta shielding is more than 2 times of matrix material.
Embodiment 2
By 85vol.%AlN (mean particle size is 5 microns), 15vol.%W (mean particle size is 20 microns), and account for the Y of AlN and W cumulative volume 8vol.% 2O 3Batching, starting powder adopt agate jar and zirconia ball, are grinding medium with the dehydrated alcohol, and according to ratio of grinding media to material 4: 1 batch mixing 24 hours on the high-energy planetary ball mill machine, rotating speed is 125 rev/mins.With after the mixed powder slurry drying screening, powder filled in mould with what sneak out, it is molded to carry out 5MPa * 1min one-way shaft, carries out 200MPa * 15min cold isostatic compaction then, obtains Mo (W)-AlN compound green compact; Place the AlN crucible to carry out under the nitrogen atmosphere, carry out 30MPa * 30min hot pressed sintering compound green compact, obtain composite block material, be processed into required standard model then at 1550 ℃.
Embodiment 3
By 65vol.%AlN (mean particle size is 0.1 micron), 35vol.%Mo (mean particle size is 1 micron), and account for the CaF of AlN and Mo cumulative volume 5vol.% 2Batching, starting powder adopt agate jar and zirconia ball, are grinding medium with the dehydrated alcohol, and according to ratio of grinding media to material 4: 1 batch mixing 24 hours on the high-energy planetary ball mill machine, rotating speed is 125 rev/mins.With after the mixed powder slurry drying screening, powder filled in mould with what sneak out, it is molded to carry out 5MPa * 2min one-way shaft, carries out 200MPa * 15min cold isostatic compaction then, obtains Mo (W)-AlN compound green compact; With compound green compact place the AlN crucible carry out under the nitrogen atmosphere, 1650 ℃ carry out 3 hours normal pressure-sintered, obtain composite block material, be processed into required standard model then.
Electron-irradiation resisting that embodiment 2-3 makes shielding matrix material all is better than Ta, W in area density greater than 2.25 o'clock shield effectiveness.
Embodiment 4
By following mixed powder, prepare the water-based tape casting slurry respectively.
Prescription 1:95vol.%AlN (mean particle size is 2 microns), 5vol.%W (mean particle size is 3 microns), and account for the CaF of AlN and W cumulative volume 8vol.% 2
Prescription 2:15vol.%AlN (mean particle size is 3 microns), 85vol%W (mean particle size is 5 microns), and account for the CaF of AlN and W cumulative volume 5vol.% 2
Use flow casting molding mechanism to be equipped with biscuit, the biscuit thickness of prescription 1 is 0.4mm, and the biscuit thickness of prescription 2 is 0.04mm, and two kinds of biscuits are successively superposeed, and the superiors and orlop are prescription 1, prescription 2 and prescription 1 alternate laminating, and total number of plies is 21 layers.After the stack compacting, at 1800 ℃, N 2Normal pressure-sintered in the atmosphere, the sample total thickness behind the sintering is 4.5mm.The stereoscan photograph of sample is shown in Fig. 5-a and Fig. 5-b behind the sintering, wherein 51 is that prescription 2 parts formation thickness is the gray layer about 20 microns, wherein 52 are about 1 layer of 200 microns prescription, the 1 layer of appearance that causes bright decorative pattern because of its poorly conductive of filling a prescription for the thickness between the gray layer.
Sample is required to be processed into required standard model according to difference carry out performance test, the relative density that records sample is 95.2%, and the thermal conductivity of the in-plane under the room temperature condition is 115.6W/ (mK), and the thermal conductivity of cross-sectional layers is 75.5W/ (mK).
4MeV monoenergetic electrons shielding test shows, the material that 4.5mm is thick can make the dosage before the incident be reduced to 110Gy by 22212Gy, and the Ta of same mass surface density can only be reduced to 270Gy.
Embodiment 5
By following mixed powder, prepare the aqueous tape casting forming slurry respectively, prepare the biscuit behind the 0.2mm.The mean particle size of AlN is 5 microns, and the mean particle size of W is 20 microns.
Prescription 1:75vol.%AlN, 25vol.%W, and account for AlN and W cumulative volume 5vol.%CaF 2
Prescription 2:80vol.%AlN, 20vol%W, and account for AlN and W cumulative volume 5vol.%CaF 2
Prescription 3:65vol.%AlN, 35vol.%W, and account for AlN and W cumulative volume 5vol.%CaF 2
Prescription 4:55vol.%AlN, 45vol%W, and account for AlN and W cumulative volume 5vol.%CaF 2
Prescription 5:50vol.%AlN, 50vol.%W, and account for AlN and W cumulative volume 5vol.%CaF 2
Prescription 6:35vol.%AlN, 65vol%W, and account for AlN and W cumulative volume 5vol.%CaF 2
Prescription 7:30vol.%AlN, 70vol.%W, and account for AlN and W cumulative volume 5vol.%CaF 2
Prescription 8:20vol.%AlN, 80vol%W, and account for AlN and W cumulative volume 3vol.%CaF 2
Prescription 9:15vol.%AlN, 85vol.%W, and account for AlN and W cumulative volume 3vol.%CaF 2
Prepare the biscuit behind the 0.2mm, according to 1,2,3,4,5,6,7,8,9,1 compacting that successively superposes, the superiors and orlop are prescription 1 with biscuit, and total number of plies is 10 layers, at 1800 ℃, N 2Normal pressure-sintered in the atmosphere, the sample total thickness behind the sintering is 2mm.
1.5MeV monoenergetic electrons shielding test shows, the material that 2mm is thick can make the dosage before the incident be reduced to 60Gy by 32000Gy, and the Ta of same mass surface density can only be reduced to 230Gy.
Embodiment 6
By following mixed powder, the mean particle size of AlN is 0.1 micron respectively, and the mean particle size of Mo is 1 micron, prepares the flow casting molding slurry:
Prescription 1:85vol.%AlN, 15vol.%Mo, and account for AlN and Mo cumulative volume 3vol.%Y 2O 3
Prescription 2:45vol.%AlN, 55vol.%Mo, and account for AlN and Mo cumulative volume 5vol.%Y 2O 3
Prescription 3:15vol.%AlN, 85vol%Mo, and account for AlN and Mo cumulative volume 8vol.%Y 2O 3
Prepare the biscuit behind the 0.2mm, biscuit according to many repeated arrangement of 1+2+3, is added a layer formula 1 at last, the superiors and orlop are prescription 1, and total number of plies is 19 layers.The stack compacting after at 1800 ℃, N 2Normal pressure-sintered in the atmosphere, the sample total thickness behind the sintering is 4.2mm.
4MeV monoenergetic electrons shielding test shows, this material can make the dosage before the incident be reduced to 194Gy by 23015Gy, and the Ta of same mass surface density can only be reduced to 230Gy.
Embodiment 7
By following mixed powder, prepare the water-based tape casting slurry respectively.
Prescription 1:95vol.%AlN (mean particle size is 5 microns), 5vol.%Mo (mean particle size is 15 microns), and account for the Y of AlN and Mo cumulative volume 8vol.% 2O 3
Prescription 2:15vol.%AlN (mean particle size is 0.5 micron), 85vol%Mo (mean particle size is 10 microns), and account for the Y of AlN and Mo cumulative volume 5vol.% 2O 3
Use flow casting molding mechanism to be equipped with biscuit, the biscuit thickness of prescription 1 is 0.5mm, and the biscuit thickness of prescription 2 is 0.05mm, and two kinds of biscuits are successively superposeed, and the superiors and orlop are prescription 1, prescription 2 and prescription 1 alternate laminating, and total number of plies is 21 layers.After the stack compacting, at 1800 ℃, N 2Normal pressure-sintered in the atmosphere, the sample total thickness behind the sintering is 5.5mm.
4MeV monoenergetic electrons shielding test shows, the material that 5.5mm is thick can make the dosage before the incident be reduced to 100Gy by 22212Gy, and the Ta of same mass surface density can only be reduced to 260Gy.

Claims (9)

1. electron-irradiation resisting shielding material, it is characterized in that: described electron-irradiation resisting shielding material comprises Mo or W as high Z metallographic phase, its amount is 15-35vol.%; AlN is 85-65vol.% for low Z medium phase, its amount.
2. electron-irradiation resisting shielding material according to claim 1 is characterized in that: described electron-irradiation resisting shielding material is a single layer structure, and described high Z metallographic phase is distributed among the low Z medium phase equably, is separated from each other between the particle in the described high Z metallographic phase.
3. electron-irradiation resisting shielding material according to claim 1, it is characterized in that: described electron-irradiation resisting shielding material is a multi-layer compound structure, described multi-layer compound structure is formed by a plurality of single layer structure stacks, the content of high Z metallographic phase Mo or W is 5-85vol.% in the single layer structure, and the content of low Z medium phase AlN is 95-15vol.%; Each single layer structure is high Z metallographic phase and is distributed in equably among the low Z medium phase AlN.
4. according to claim 2 or 3 described electron-irradiation resisting shielding materials, it is characterized in that: described electron-irradiation resisting shielding material also comprises CaF 2Or Y 2O 3Sintering aid, the content of this sintering aid are high Z metallographic phase and the low Z medium 3-8% of cumulative volume mutually.
5. the preparation method of the described electron-irradiation resisting shielding material of claim 2, its step is as follows:
(1) with the Mo of 15-35vol.% or W as high Z metallographic phase, the AlN of 85-65vol.% is low Z medium phase, uses the method for ball milling to carry out thorough mixing;
(2) it is molded to carry out 3-5MPa * 1-5min one-way shaft earlier, carries out 200MPa * 15min cold isostatic compaction then, obtains Mo (W)-AlN compound green compact;
(3) step (2) gained compound green compact is placed ZrO 2Or it is normal pressure-sintered to carry out under the nitrogen atmosphere 1650-1900 ℃, 1-3h in the AlN crucible, perhaps at 1550 ℃ of-1800 ℃ of hot pressed sinterings, obtains Mo (W)-AlN composite block material;
(4) shape and size during by concrete use are processed with step (3) gained block materials, promptly obtain the individual layer electron-irradiation resisting shielding material.
6. the preparation method of the described electron-irradiation resisting shielding material of claim 3, its step is as follows:
(1) with the Mo of 5-85vol.% or W as high Z metallographic phase, the AlN of 15-95vol.% is low Z medium phase, uses the method for ball milling to carry out thorough mixing, is prepared into the slurry that contains different high Z metallographic phase ratios;
(2) use flow casting molding mechanism to be equipped with biscuit, biscuit thickness is 0.04mm-0.5mm;
(3) biscuit is successively superposeed compacting, wherein the content of the high Z metallographic phase of outermost layer biscuit is lower than 25%, then at 1800 ℃, N 2Normal pressure-sintered in the atmosphere, obtain block materials;
(4) shape and size during by concrete use are processed with step (3) gained block materials, promptly obtain the multilayer materials of electron-irradiation resisting shielding.
7. according to the preparation method of claim 5 or 6 described electron-irradiation resisting shielding materials, it is characterized in that: described step also comprises CaF in (1) 2Or Y 2O 3Sintering aid, the content of this sintering aid are high Z metallographic phase and the low Z medium 3-8% of cumulative volume mutually.
8. according to claim 5 or 6 described electron-irradiation resisting shielding materials, it is characterized in that: the mean particle size of metal-powder is the 1-20 micron in the described high Z metallographic phase; The described low Z medium mean particle size of middle AlN powder mutually is the 0.1-5 micron.
9. according to claim 5 or 6 described electron-irradiation resisting shielding materials, it is characterized in that: the mean particle size of metal-powder is the 3-5 micron in the described high Z metallographic phase; The described low Z medium granularity of middle AlN powder mutually is the 2-3 micron.
CN200810239845A 2008-12-19 2008-12-19 Electron-irradiation resisting shielding material and method for preparing same Pending CN101748319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200810239845A CN101748319A (en) 2008-12-19 2008-12-19 Electron-irradiation resisting shielding material and method for preparing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200810239845A CN101748319A (en) 2008-12-19 2008-12-19 Electron-irradiation resisting shielding material and method for preparing same

Publications (1)

Publication Number Publication Date
CN101748319A true CN101748319A (en) 2010-06-23

Family

ID=42475929

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810239845A Pending CN101748319A (en) 2008-12-19 2008-12-19 Electron-irradiation resisting shielding material and method for preparing same

Country Status (1)

Country Link
CN (1) CN101748319A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102361023A (en) * 2011-10-20 2012-02-22 中国电子科技集团公司第十三研究所 Ceramic shell capable of enhancing radiation shielding and preparation method thereof
CN107540381A (en) * 2016-12-30 2018-01-05 莱鼎电子材料科技有限公司 A kind of aluminium nitride ceramic substrate slurry
CN111235563A (en) * 2020-03-04 2020-06-05 中国科学院金属研究所 Method for preparing Ta/Al composite anti-irradiation coating by adopting cold spraying
RU2747969C1 (en) * 2020-07-21 2021-05-18 Акционерное Общество "Нииэфа Им. Д.В. Ефремова" Device for formation of anticorrosion layers on the surface of fuel elements
CN113990540A (en) * 2021-09-28 2022-01-28 哈尔滨工业大学 Flash device resistant to heavy ion single event effect and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102361023A (en) * 2011-10-20 2012-02-22 中国电子科技集团公司第十三研究所 Ceramic shell capable of enhancing radiation shielding and preparation method thereof
CN107540381A (en) * 2016-12-30 2018-01-05 莱鼎电子材料科技有限公司 A kind of aluminium nitride ceramic substrate slurry
CN111235563A (en) * 2020-03-04 2020-06-05 中国科学院金属研究所 Method for preparing Ta/Al composite anti-irradiation coating by adopting cold spraying
RU2747969C1 (en) * 2020-07-21 2021-05-18 Акционерное Общество "Нииэфа Им. Д.В. Ефремова" Device for formation of anticorrosion layers on the surface of fuel elements
CN113990540A (en) * 2021-09-28 2022-01-28 哈尔滨工业大学 Flash device resistant to heavy ion single event effect and preparation method thereof

Similar Documents

Publication Publication Date Title
KR101731847B1 (en) MgO TARGET FOR SPUTTERING
Zhang et al. Effects of dual-layer coatings on microstructure and thermal conductivity of diamond/Cu composites prepared by vacuum hot pressing
CN110603340B (en) Boro-tungsten carbide bodies for nuclear shielding applications
EP2548993B1 (en) Sputtering target and manufacturing method therefor
CN101748319A (en) Electron-irradiation resisting shielding material and method for preparing same
CN111834135B (en) MAX @ MOm/AOn electrical contact enhanced phase material, composite electrical contact material and preparation method
CN103074532A (en) Method for preparing solid solution toughened wolfram-base composite material through laser rapid forming
EP2589571A1 (en) Powder, sintered body and sputtering target, each containing elements cu, in, ga and se, and method for producing the powder
US9435023B2 (en) Method for producing Cu-Ga alloy powder, Cu-Ga alloy powder, method for producing Cu-Ga alloy sputtering target, and Cu-Ga alloy sputtering target
CN107974627B (en) A kind of alferric ferritic ODS steel and preparation method thereof
CN107417280A (en) A kind of normal pressure-sintered boron carbide ceramics preparation method
CN106756281B (en) A kind of neutron absorber material of high rare-earth content and preparation method thereof
Ling et al. Fabrication and evaluation of SiC/Cu functionally graded material used for plasma facing components in a fusion reactor
CN106920669A (en) A kind of preparation method of R-Fe-B based sintered magnets
CN103805952A (en) Large-sized high purity tungsten target and production method thereof
CN101565786B (en) Radiation protection aluminum-based composite material and vacuum hot-pressing preparation method thereof
CN100427631C (en) Nano SiC granule composite CoSb3 base thermoelectric material and its preparing process
CN115852189A (en) Preparation method of diamond copper composite material with high filling rate and high heat conductivity and double particle diameters
CN113403553B (en) Method for preparing zirconium-based metallic glass by selective laser melting and product
CN103658662A (en) Process for preparing metal laminar composite materials not capable of being fused in solid state through powder sintering infiltration method
Qi et al. The TiC/Ni–Cr Composites with Low Thermal Expansion and Electrical Resistivity Applied for IT‐SOFC Interconnects
CN116516286B (en) High-entropy ceramic nitride protective coating for shielding high-energy electrons and preparation method thereof
JP2014210943A (en) Cu-Ga ALLOY TARGET MATERIAL AND METHOD FOR MANUFACTURING THE SAME
CN105316504B (en) Material mixing method for preparing wolfram carbide particle (WCp)/2024Al composite radiation shield material
JP2014034684A (en) Molybdenum based sputtering target material and method for manufacturing the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20100623