CN101724911B - 一种用于p型硅外延片电阻率测量前的表面热处理工艺 - Google Patents
一种用于p型硅外延片电阻率测量前的表面热处理工艺 Download PDFInfo
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CN 200910241669 CN101724911B (zh) | 2009-11-30 | 2009-11-30 | 一种用于p型硅外延片电阻率测量前的表面热处理工艺 |
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CN101724911B true CN101724911B (zh) | 2012-04-11 |
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JP6489942B2 (ja) * | 2015-05-29 | 2019-03-27 | 東芝メモリ株式会社 | 半導体デバイスの製造方法 |
CN105552003B (zh) * | 2015-12-25 | 2019-02-05 | 上海华虹宏力半导体制造有限公司 | P型外延片生产中的电阻率监控方法 |
CN112366132A (zh) * | 2020-11-05 | 2021-02-12 | 天津中环领先材料技术有限公司 | 一种硅片氧化方法 |
CN112820797B (zh) * | 2020-12-31 | 2023-08-04 | 横店集团东磁股份有限公司 | 一种perc单晶电池用硅片的退火方法及perc单晶电池用硅片与应用 |
CN116525416B (zh) * | 2023-06-09 | 2023-11-07 | 中电科先进材料技术创新有限公司 | 硅外延片的预处理方法 |
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Address after: 100088, 2, Xinjie street, Beijing Patentee after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088, 2, Xinjie street, Beijing Patentee before: GRINM Semiconductor Materials Co., Ltd. |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |