CN101724811A - Electromagnetic perfect absorber based on sub-wavelength metal hole array - Google Patents
Electromagnetic perfect absorber based on sub-wavelength metal hole array Download PDFInfo
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- CN101724811A CN101724811A CN200910243548A CN200910243548A CN101724811A CN 101724811 A CN101724811 A CN 101724811A CN 200910243548 A CN200910243548 A CN 200910243548A CN 200910243548 A CN200910243548 A CN 200910243548A CN 101724811 A CN101724811 A CN 101724811A
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 19
- 239000002184 metal Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 title abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 24
- 238000001704 evaporation Methods 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010453 quartz Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 9
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 238000000609 electron-beam lithography Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 27
- 230000008020 evaporation Effects 0.000 claims description 20
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 4
- 239000010931 gold Substances 0.000 abstract 4
- 229910052737 gold Inorganic materials 0.000 abstract 4
- 238000005498 polishing Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 20
- 230000007704 transition Effects 0.000 description 4
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
An electromagnetic perfect absorber based on a sub-wavelength metal hole array comprises the following manufacturing steps: (1) selecting a quartz substrate, and polishing the surface of the quartz substrate; then depositing a layer of gold film with the thickness of more than 50 nanometers on the surface of the quartz substrate after surface polishing by adopting vacuum evaporation; (2) depositing a layer on the surface of the gold film by evaporationSiO with thickness of 35 nm to 45 nm2Film of and on said SiO2Uniformly coating a layer of photoresist on the film; (3) preparing a sub-wavelength medium column structure on the photoresist by adopting an electron beam lithography method, wherein the period of the sub-wavelength medium column structure is 235-245 nm, and the duty ratio is 1: 1.35-1: 1.45; (4) evaporating a gold film with the thickness of 20 to 25 nanometers on the formed photoresist by adopting a vacuum evaporation technology; (5) and removing the sub-wavelength medium column structure and the gold film evaporated on the sub-wavelength medium column structure by adopting a degumming solution, and manufacturing the electromagnetic perfect absorber based on the sub-wavelength metal hole array. The invention has the characteristics of simple and convenient manufacture, small thickness and large incident angle, and has great application prospect in the fields of electromagnetic energy absorption, conversion and the like.
Description
Technical field
The present invention relates to a kind of surface plasma coupled characteristic that utilizes the sub-wavelength metallic hole array structure, the design and the making of the artificial composite structure material that the electromagnetic perfect of realization visible light frequency band absorbs.
Technical background
Electromagnetic energy absorption is the prerequisite that energy obtains and changes, present electromagnetic energy absorption mainly is that the energy level transition of traditional material absorbs, the mechanism of its absorption is based on transition of electronic energy in the material, molecular entergy level vibration, current carrier energy level transition etc., these vibrations and transition can be converted into the electromagnetic energy of external radiation the electronic potential, molecular potential etc. of material internal, and finally be converted into can available signal, as heat, electromotive force etc.In these energy transformation, especially when external electric magnetic energy was converted into the potential energy of material internal, its efficiency of conversion was subjected to the restriction of material.Various defectives in the material of introducing in making processes can reduce assimilated efficiency.In addition, the absorbing wavelength and the scope of every kind of material are fixed, and have limited the adjustability of absorbing wavelength and bandwidth.
Summary of the invention
The problem to be solved in the present invention is: at the shortage of existing visible light frequency band electromagnetic absorber, a kind of surface plasma coupled characteristic that utilizes the sub-wavelength metallic hole array structure is proposed, the method for the artificial composite structure material that the electromagnetic perfect of realization visible light frequency band absorbs.
The technical solution adopted for the present invention to solve the technical problems is: a kind of electromagnetic perfect absorber based on sub-wavelength metallic hole array, and the making step of the described cartridge of its feature is as follows:
(1) select quartz substrate, and with its surface finish; Adopt vacuum evaporation then, the golden film that quartz substrate surface deposition one layer thickness after surface finish greater than 50 nanometers is;
(2) be the SiO of 35 nanometer to 45 nanometers at golden film surface evaporation one layer thickness
2Film, and at SiO
2Evenly apply one deck photoresist material on the film;
(3) method of employing beamwriter lithography is prepared sub-wavelength medium rod structure on photoresist material, and the cycle of described sub-wavelength medium rod structure is 235 nanometer to 245 nanometers, and dutycycle is 1: 1.35 to 1: 1.45;
(4) adopt vacuum evaporation technology, evaporation thickness is the golden film of 20 nanometer to 25 nanometers on molded photoresist material;
(5) adopt the liquid that removes photoresist, the golden film on sub-wavelength medium rod structure is removed with sub-wavelength medium rod structure and evaporation, completes based on the electromagnetic perfect absorber of sub-wavelength metallic hole array.
Photoresist material in the described step (2) is the PMMA photoresist material that is used for electron beam lithography, and its thickness is 40 nanometer to 50 nanometers.
The present invention with compare the advantage that is had with the material of traditional realization electromagnetic absorption: the present invention is by the combination of each step in the technical scheme, adopt photoetching technique simultaneously, realized having the shape metal composite layer structure of special electromagnetic property, have simple for production, thickness is little, the characteristic that incident angle is big has great application prospect in fields such as electromagnetic energy absorption, conversions.
Description of drawings
Fig. 1 is the making synoptic diagram of the first step that the present invention is based on the electromagnetic perfect absorber of sub-wavelength metallic hole array;
Fig. 2 is the second making synoptic diagram that goes on foot that the present invention is based on the electromagnetic perfect absorber of sub-wavelength metallic hole array;
Fig. 3 is the 3rd making synoptic diagram that goes on foot that the present invention is based on the electromagnetic perfect absorber of sub-wavelength metallic hole array;
Fig. 4 is the 4th making synoptic diagram that goes on foot that the present invention is based on the electromagnetic perfect absorber of sub-wavelength metallic hole array;
Fig. 5 is the 5th making synoptic diagram that goes on foot that the present invention is based on the electromagnetic perfect absorber of sub-wavelength metallic hole array;
Among the figure: 1 for the quartz substrate of surface finish; 2 is the golden film of evaporation; 3 is the SiO of evaporation
2Film; 4 for the PMMA electron beam resist of spin coating.
Embodiment
Introduce the present invention in detail below in conjunction with the drawings and the specific embodiments.But following embodiment only limits to explain the present invention, and protection scope of the present invention should comprise the full content of claim, and by following examples 1,2,3, those skilled in the art promptly can realize the full content of claim of the present invention.
As shown in Figure 1, the making synoptic diagram of the present embodiment the first step is at first selected quartz substrate 1, and with its surface finish; Then at the golden film 2 of its surperficial evaporation one layer thickness greater than 50 nanometers;
As shown in Figure 2, the making synoptic diagram in second step of present embodiment, evaporation thickness is 35 nanometer SiO on golden film surface
2Film 3, evenly coating thickness is the PMMA photoresist material 4 of 50 nanometers then;
As shown in Figure 3, the making synoptic diagram in the 3rd step of present embodiment, the method for employing beamwriter lithography is prepared cycles 235 nanometer on photoresist material 4, and dutycycle is 1: 1.35 a sub-wavelength medium rod structure;
As shown in Figure 4, the making synoptic diagram in the 4th step of present embodiment adopts vacuum evaporation technology, and evaporation thickness is the golden film 4 of 20 nanometers on sub-wavelength medium rod structure;
As shown in Figure 5, the making synoptic diagram in the 5th step of present embodiment adopts the liquid that removes photoresist, and the golden film on sub-wavelength medium rod structure is removed with sub-wavelength medium rod structure and evaporation.Electromagnetic perfect absorber based on sub-wavelength metallic hole array completes.
As shown in Figure 1, the making synoptic diagram of the present embodiment the first step is at first selected quartz substrate 1, and with its surface finish; Then at the golden film 2 of its surperficial evaporation one layer thickness greater than 50 nanometers;
As shown in Figure 2, the making synoptic diagram in second step of present embodiment, evaporation thickness is 40 nanometer SiO on golden film surface
2Film 3, evenly coating thickness is the PMMA photoresist material 4 of 50 nanometers then;
As shown in Figure 3, the making synoptic diagram in the 3rd step of present embodiment, the method for employing beamwriter lithography is prepared cycles 240 nanometer on photoresist material 4, and dutycycle is 1: 1.4 a sub-wavelength medium rod structure;
As shown in Figure 4, the making synoptic diagram in the 4th step of present embodiment adopts vacuum evaporation technology, and evaporation thickness is the golden film 4 of 20 nanometers on sub-wavelength medium rod structure;
As shown in Figure 5, the making synoptic diagram in the 5th step of present embodiment adopts the liquid that removes photoresist, and the golden film on sub-wavelength medium rod structure is removed with sub-wavelength medium rod structure and evaporation.Electromagnetic perfect absorber based on sub-wavelength metallic hole array completes.
As shown in Figure 1, the making synoptic diagram of the present embodiment the first step is at first selected quartz substrate 1, and with its surface finish; Then at the golden film 2 of its surperficial evaporation one layer thickness greater than 50 nanometers;
As shown in Figure 2, the making synoptic diagram in second step of present embodiment, evaporation thickness is 45 nanometer SiO on golden film surface
2Film 3, evenly coating thickness is the PMMA photoresist material 4 of 50 nanometers then;
As shown in Figure 3, the making synoptic diagram in the 3rd step of present embodiment, the method for employing beamwriter lithography is prepared cycles 245 nanometer on photoresist material 4, and dutycycle is 1: 1.45 a sub-wavelength medium rod structure;
As shown in Figure 4, the making synoptic diagram in the 4th step of present embodiment adopts vacuum evaporation technology, and evaporation thickness is the golden film 4 of 20 nanometers on sub-wavelength medium rod structure;
As shown in Figure 5, the making synoptic diagram in the 5th step of present embodiment adopts the liquid that removes photoresist, and the golden film on sub-wavelength medium rod structure is removed with sub-wavelength medium rod structure and evaporation.Electromagnetic perfect absorber based on sub-wavelength metallic hole array completes.
By the electromagnetic perfect absorber based on sub-wavelength metallic hole array of above method made, utilize the surface plasma coupled characteristic of sub-wavelength metallic hole array, be implemented in visible light frequency band, to the perfection absorption of electromagnetic radiation.Simulation result show by this absorption physical efficiency in each orientation absorption of electromagnetic radiation (the average absorption rate is greater than 90%) significantly.This cartridge is the absorption of electromagnetic radiation material that has minimal wave length at present, has simple for productionly simultaneously, and thickness is little, and the characteristic that incident angle is big has great application prospect in fields such as electromagnetic energy absorption, conversions.
The non-elaborated part of the present invention belongs to the known technology of this area.
Claims (2)
1. electromagnetic perfect absorber based on sub-wavelength metallic hole array, the making step of the described cartridge of its feature is as follows:
(1) select quartz substrate, and with its surface finish; Adopt vacuum evaporation then, the golden film that quartz substrate surface deposition one layer thickness after surface finish greater than 50 nanometers is;
(2) be the SiO of 35 nanometers-45 nanometer at golden film surface evaporation one layer thickness
2Film, and at described SiO
2Evenly apply one deck photoresist material on the film;
(3) method of employing beamwriter lithography is prepared sub-wavelength medium rod structure on photoresist material, and the cycle of described sub-wavelength medium rod structure is 235 nanometers-245 nanometers, and dutycycle is 1: 1.35-1: 1.45;
(4) adopt vacuum evaporation technology, evaporation thickness is the golden film of 20 nanometers-25 nanometer on molded photoresist material;
(5) adopt the liquid that removes photoresist, the golden film on sub-wavelength medium rod structure is removed with sub-wavelength medium rod structure and evaporation, completes based on the electromagnetic perfect absorber of sub-wavelength metallic hole array.
2. a kind of electromagnetic perfect absorber based on sub-wavelength metallic hole array according to claim 1 is characterized in that: the photoresist material in the described step (2) is the PMMA photoresist material that is used for electron beam lithography, and its thickness is 40 nanometers-50 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102435488A CN101724811B (en) | 2009-12-25 | 2009-12-25 | Electromagnetic absorber based on sub-wavelength metal hole array |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102435488A CN101724811B (en) | 2009-12-25 | 2009-12-25 | Electromagnetic absorber based on sub-wavelength metal hole array |
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| Publication Number | Publication Date |
|---|---|
| CN101724811A true CN101724811A (en) | 2010-06-09 |
| CN101724811B CN101724811B (en) | 2011-04-20 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105480931A (en) * | 2015-12-14 | 2016-04-13 | 淮阴工学院 | Visible light bidirectional absorber structure |
| CN106405697A (en) * | 2016-12-08 | 2017-02-15 | 中国科学院光电技术研究所 | Dynamically adjustable multi-frequency electromagnetic wave-absorbing material |
| CN106950631A (en) * | 2017-05-09 | 2017-07-14 | 华中科技大学 | A kind of infrared wave-absorbing body and preparation method based on medium micro-pillar array |
| CN107111011A (en) * | 2017-03-29 | 2017-08-29 | 香港中文大学（深圳） | Perfect absorber |
| CN107121715A (en) * | 2017-04-12 | 2017-09-01 | 苏州大学 | A kind of super surface perfect absorbeperfect absorber of large-area wide incidence angle based on coupling Michaelis resonance and preparation method thereof |
| CN112834633A (en) * | 2020-12-28 | 2021-05-25 | 北京杰宇广谱科技有限公司 | Fast hydrocarbon composition analyzer |
-
2009
- 2009-12-25 CN CN2009102435488A patent/CN101724811B/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105480931A (en) * | 2015-12-14 | 2016-04-13 | 淮阴工学院 | Visible light bidirectional absorber structure |
| CN106405697A (en) * | 2016-12-08 | 2017-02-15 | 中国科学院光电技术研究所 | Dynamically adjustable multi-frequency electromagnetic wave-absorbing material |
| CN106405697B (en) * | 2016-12-08 | 2019-06-25 | 中国科学院光电技术研究所 | Dynamically adjustable multi-frequency electromagnetic wave-absorbing material |
| CN107111011A (en) * | 2017-03-29 | 2017-08-29 | 香港中文大学（深圳） | Perfect absorber |
| CN107121715A (en) * | 2017-04-12 | 2017-09-01 | 苏州大学 | A kind of super surface perfect absorbeperfect absorber of large-area wide incidence angle based on coupling Michaelis resonance and preparation method thereof |
| CN107121715B (en) * | 2017-04-12 | 2019-08-23 | 苏州大学 | A kind of super surface perfect absorbeperfect absorber and preparation method thereof based on coupling Michaelis resonance |
| CN106950631A (en) * | 2017-05-09 | 2017-07-14 | 华中科技大学 | A kind of infrared wave-absorbing body and preparation method based on medium micro-pillar array |
| CN112834633A (en) * | 2020-12-28 | 2021-05-25 | 北京杰宇广谱科技有限公司 | Fast hydrocarbon composition analyzer |
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| Publication number | Publication date |
|---|---|
| CN101724811B (en) | 2011-04-20 |
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