CN101720493B - 多靶溅射源及沉积多层的方法 - Google Patents
多靶溅射源及沉积多层的方法 Download PDFInfo
- Publication number
- CN101720493B CN101720493B CN2008800202650A CN200880020265A CN101720493B CN 101720493 B CN101720493 B CN 101720493B CN 2008800202650 A CN2008800202650 A CN 2008800202650A CN 200880020265 A CN200880020265 A CN 200880020265A CN 101720493 B CN101720493 B CN 101720493B
- Authority
- CN
- China
- Prior art keywords
- target
- arrange
- sputtering
- magnetic field
- sputter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
靶3a、3b | 靶2 | 靶1a、1b |
Fe | Pt | Fe |
CoCrPt(B) | Ru | CoCrPt(B) |
CoCrPt(B) | SiO2 | CoCrPt(B) |
CoFe | X | CoFe |
CoZr | X | CoZr |
FeTb | X | FeTb |
FeCoTbGd | X | FeCoTbGd |
Claims (26)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94411807P | 2007-06-15 | 2007-06-15 | |
US60/944,118 | 2007-06-15 | ||
PCT/EP2008/057500 WO2008152135A1 (en) | 2007-06-15 | 2008-06-13 | Multitarget sputter source and method for the deposition of multi-layers |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101720493A CN101720493A (zh) | 2010-06-02 |
CN101720493B true CN101720493B (zh) | 2012-08-15 |
Family
ID=39680984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800202650A Expired - Fee Related CN101720493B (zh) | 2007-06-15 | 2008-06-13 | 多靶溅射源及沉积多层的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080308412A1 (zh) |
EP (1) | EP2162899B1 (zh) |
KR (1) | KR20100040855A (zh) |
CN (1) | CN101720493B (zh) |
WO (1) | WO2008152135A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110256408A1 (en) * | 2010-04-16 | 2011-10-20 | Guardian Industries Corp., | Method of making coated article having anti-bacterial and/or anti-fungal coating and resulting product |
MY160775A (en) * | 2010-09-03 | 2017-03-15 | Jx Nippon Mining & Metals Corp | Ferromagnetic material sputtering target |
US20130101749A1 (en) * | 2011-10-25 | 2013-04-25 | Intermolecular, Inc. | Method and Apparatus for Enhanced Film Uniformity |
US9708706B2 (en) | 2011-11-30 | 2017-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD apparatus and method with deposition chamber having multiple targets and magnets |
EP3077566A1 (en) * | 2013-12-04 | 2016-10-12 | Oerlikon Advanced Technologies AG | Sputtering source arrangement, sputtering system and method of manufacturing metal-coated plate-shaped substrates |
JP6367483B2 (ja) * | 2015-05-21 | 2018-08-01 | Jx金属株式会社 | スパッタリングターゲット |
KR101708863B1 (ko) * | 2016-08-29 | 2017-03-08 | 인코코리아(주) | 금속 박막자석 및 이를 적용한 스피커 및 금속 박막자석 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4761218A (en) * | 1984-05-17 | 1988-08-02 | Varian Associates, Inc. | Sputter coating source having plural target rings |
DE3908252A1 (de) * | 1989-03-14 | 1990-09-20 | Leybold Ag | Zerstaeubungskathode nach dem magnetron-prinzip |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4299678A (en) * | 1979-07-23 | 1981-11-10 | Spin Physics, Inc. | Magnetic target plate for use in magnetron sputtering of magnetic films |
EP0144572B1 (de) * | 1983-12-05 | 1989-10-18 | Leybold Aktiengesellschaft | Magnetronkatode zum Zerstäuben ferromagnetischer Targets |
EP0144838B1 (de) * | 1983-12-05 | 1989-10-11 | Leybold Aktiengesellschaft | Magnetronkatode zum Zerstäuben ferromagnetischer Targets |
DE163445T1 (de) * | 1984-05-17 | 1986-05-22 | Varian Associates, Inc., Palo Alto, Calif. | Magnetron-zerstaeubungs-vorrichtung mit ebenen und konkaven auftreffplatten. |
DE3624150C2 (de) * | 1986-07-17 | 1994-02-24 | Leybold Ag | Zerstäubungskatode nach dem Magnetronprinzip |
US5512150A (en) * | 1995-03-09 | 1996-04-30 | Hmt Technology Corporation | Target assembly having inner and outer targets |
DE19813075A1 (de) * | 1998-03-25 | 1999-09-30 | Leybold Ag | Vorrichtung zum Beschichten eines Substrates |
DE10004824B4 (de) * | 2000-02-04 | 2009-06-25 | Oc Oerlikon Balzers Ag | Verfahren zur Herstellung von Substraten, Magnetronquelle, Sputterbeschichtungskammer und Verwendung des Verfahrens |
US6488822B1 (en) * | 2000-10-20 | 2002-12-03 | Veecoleve, Inc. | Segmented-target ionized physical-vapor deposition apparatus and method of operation |
CN100336108C (zh) * | 2002-03-29 | 2007-09-05 | 希捷科技有限公司 | 钴铬薄膜中具有高硼或高碳添加剂的多层垂直介质 |
US7235314B2 (en) * | 2004-03-11 | 2007-06-26 | Seagate Technology Llc | Inter layers for perpendicular recording media |
-
2008
- 2008-06-13 US US12/139,096 patent/US20080308412A1/en not_active Abandoned
- 2008-06-13 WO PCT/EP2008/057500 patent/WO2008152135A1/en active Application Filing
- 2008-06-13 CN CN2008800202650A patent/CN101720493B/zh not_active Expired - Fee Related
- 2008-06-13 KR KR1020107000899A patent/KR20100040855A/ko not_active Application Discontinuation
- 2008-06-13 EP EP08761019.2A patent/EP2162899B1/en not_active Not-in-force
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4761218A (en) * | 1984-05-17 | 1988-08-02 | Varian Associates, Inc. | Sputter coating source having plural target rings |
DE3908252A1 (de) * | 1989-03-14 | 1990-09-20 | Leybold Ag | Zerstaeubungskathode nach dem magnetron-prinzip |
Also Published As
Publication number | Publication date |
---|---|
EP2162899A1 (en) | 2010-03-17 |
WO2008152135A1 (en) | 2008-12-18 |
EP2162899B1 (en) | 2015-01-21 |
KR20100040855A (ko) | 2010-04-21 |
CN101720493A (zh) | 2010-06-02 |
US20080308412A1 (en) | 2008-12-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: OERLIKON ADVANCED TECHNOLOGIES AG Free format text: FORMER OWNER: OC OERLIKON BALZERS AG Effective date: 20140724 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140724 Address after: Liechtenstein Barr Che J Patentee after: Oerlikon sophisticated technologies stock company Address before: Liechtenstein Barr Che J Patentee before: OC Oerlikon Balzers AG Effective date of registration: 20140724 Address after: Liechtenstein Barr Che J Patentee after: Oerlikon sophisticated technologies stock company Address before: Liechtenstein Barr Che J Patentee before: OC Oerlikon Balzers AG |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120815 Termination date: 20190613 |
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CF01 | Termination of patent right due to non-payment of annual fee |