CN101702139B - 一种访问Nand闪存数据的方法和装置 - Google Patents
一种访问Nand闪存数据的方法和装置 Download PDFInfo
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- CN101702139B CN101702139B CN 200910224156 CN200910224156A CN101702139B CN 101702139 B CN101702139 B CN 101702139B CN 200910224156 CN200910224156 CN 200910224156 CN 200910224156 A CN200910224156 A CN 200910224156A CN 101702139 B CN101702139 B CN 101702139B
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004364 calculation method Methods 0.000 claims description 5
- 230000001360 synchronised effect Effects 0.000 claims description 3
- 238000007726 management method Methods 0.000 description 20
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
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Abstract
Description
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910224156 CN101702139B (zh) | 2009-11-24 | 2009-11-24 | 一种访问Nand闪存数据的方法和装置 |
PCT/CN2010/073520 WO2010148922A1 (zh) | 2009-11-24 | 2010-06-03 | 一种访问nand闪存数据的方法和装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910224156 CN101702139B (zh) | 2009-11-24 | 2009-11-24 | 一种访问Nand闪存数据的方法和装置 |
Publications (2)
Publication Number | Publication Date |
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CN101702139A CN101702139A (zh) | 2010-05-05 |
CN101702139B true CN101702139B (zh) | 2011-11-30 |
Family
ID=42157055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 200910224156 Expired - Fee Related CN101702139B (zh) | 2009-11-24 | 2009-11-24 | 一种访问Nand闪存数据的方法和装置 |
Country Status (2)
Country | Link |
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CN (1) | CN101702139B (zh) |
WO (1) | WO2010148922A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101702139B (zh) * | 2009-11-24 | 2011-11-30 | 中兴通讯股份有限公司 | 一种访问Nand闪存数据的方法和装置 |
CN101853702B (zh) * | 2010-05-28 | 2015-06-17 | 上海华虹宏力半导体制造有限公司 | 一种利用内建自测提高读取速度的闪存及其方法 |
CN102736860B (zh) * | 2011-04-08 | 2015-03-11 | 安凯(广州)微电子技术有限公司 | 同步nand的数据操作***及方法 |
CN103559146B (zh) * | 2013-11-05 | 2016-03-30 | 山东大学 | 一种提高NAND flash控制器读写速度的方法 |
CN107273306B (zh) * | 2017-06-19 | 2021-01-12 | 苏州浪潮智能科技有限公司 | 一种固态硬盘的数据读取、数据写入方法及固态硬盘 |
CN107832016A (zh) * | 2017-11-13 | 2018-03-23 | 郑州云海信息技术有限公司 | 一种读干扰优化方法及装置 |
CN110364220B (zh) * | 2018-04-09 | 2022-04-29 | 展讯通信(上海)有限公司 | 用于测量嵌入式存储器的数据读取时间的电路***及芯片 |
CN111563054B (zh) * | 2020-04-17 | 2023-05-30 | 深圳震有科技股份有限公司 | 一种提高芯片读写速度的方法、智能终端及存储介质 |
CN113918485B (zh) * | 2021-10-12 | 2023-04-11 | 广东省高峰科技有限公司 | 一种闪存资料防丢失方法、装置、设备及存储介质 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5179687A (en) * | 1987-09-26 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device containing a cache and an operation method thereof |
US5778430A (en) * | 1996-04-19 | 1998-07-07 | Eccs, Inc. | Method and apparatus for computer disk cache management |
CN1462000A (zh) * | 2002-05-29 | 2003-12-17 | 科统科技股份有限公司 | 闪存桥接装置、方法及其应用*** |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1452181A (zh) * | 2002-04-19 | 2003-10-29 | 笙泉科技股份有限公司 | Nand型快闪存储器磁盘装置及检测逻辑位址的方法 |
US7519754B2 (en) * | 2005-12-28 | 2009-04-14 | Silicon Storage Technology, Inc. | Hard disk drive cache memory and playback device |
CN101344867A (zh) * | 2007-07-13 | 2009-01-14 | 深圳市江波龙电子有限公司 | 提高Nand型快闪存储器数据存取速度的方法 |
CN101702139B (zh) * | 2009-11-24 | 2011-11-30 | 中兴通讯股份有限公司 | 一种访问Nand闪存数据的方法和装置 |
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2009
- 2009-11-24 CN CN 200910224156 patent/CN101702139B/zh not_active Expired - Fee Related
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2010
- 2010-06-03 WO PCT/CN2010/073520 patent/WO2010148922A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5179687A (en) * | 1987-09-26 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device containing a cache and an operation method thereof |
US5778430A (en) * | 1996-04-19 | 1998-07-07 | Eccs, Inc. | Method and apparatus for computer disk cache management |
CN1462000A (zh) * | 2002-05-29 | 2003-12-17 | 科统科技股份有限公司 | 闪存桥接装置、方法及其应用*** |
Non-Patent Citations (2)
Title |
---|
JP特开平10-177521A 1998.06.30 |
JP特开平6-75859A 1994.03.18 |
Also Published As
Publication number | Publication date |
---|---|
WO2010148922A1 (zh) | 2010-12-29 |
CN101702139A (zh) | 2010-05-05 |
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Effective date of registration: 20170829 Address after: Jiaxiu road Zhuozhou City, Hebei province 071000 Baoding City No. 39 No. 41 building 4 unit 301 room Co-patentee after: Han Li Patentee after: Zhang Cuiru Co-patentee after: Liu Cuixia Co-patentee after: Liu Zaoliang Co-patentee after: Wang Mei Address before: 518057 Nanshan District Guangdong high tech Industrial Park, South Road, science and technology, ZTE building, Ministry of Justice Patentee before: ZTE Corp. |
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CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhang Cuiru Inventor after: Han Li Inventor after: Liu Cuixia Inventor after: Liu Zaoliang Inventor after: Wang Mei Inventor before: Li Xianjun |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20111130 Termination date: 20211124 |