CN101697326B

CN101697326B - Internal series-connection method of dye-sensitized solar cell

Info

Publication number: CN101697326B
Application number: CN 200910218647
Authority: CN
Inventors: 余可
Original assignee: Irico Group Corp
Current assignee: Irico Group Corp
Priority date: 2009-10-29
Filing date: 2009-10-29
Publication date: 2011-06-15
Anticipated expiration: 2029-10-29
Also published as: CN101697326A

Abstract

The invention relates to an internal series-connection method of a dye-sensitized solar cell. The dye-sensitized solar cell comprises upper and lower transparent conductive glass substrates; grooves are etched on conductive surfaces of the two substrates, and conductive surfaces on both sides of the grooves are not connected electrically; nanocrystalline semiconductor films and platinum catalyst layers are arrayed on the conductive surfaces, isolated by the grooves, of the substrates, and the grooves are isolated by coating metal conductive layers; the substrate, the number of the nanocrystalline semiconductor films arrayed on which is larger that of the platinum catalyst layers, serves a cathode, while the other substrate, the number of the platinum catalyst layers arrayed on the other substrate is larger that of the nanocrystalline semiconductor films, serves as an anode; the conductive surfaces of the two substrates are opposite; a solder layer is formed on both a metal conductive layer and a transparent conductive film on one side in which an insulation material is not coated on each substrate, and the solder layer is used as an external anode to realize that the cell is welded with an external circuit; in cavities, the nanocrystalline semiconductor films on the conductive surfaces form photoanodes, and the platinum catalyst layers on the conductive surfaces form cathodes; and the anodes and the cathodes of adjacent cavities are electrically connected through the conductive surfaces and the metal conductive layers so as to realize the internal series-connection of the cell.

Description

A kind of internal series-connection method of DSSC

Technical field:

The present invention relates to technical field of solar batteries, specifically a kind of internal series-connection method of DSSC;

Background technology:

DSSC is simple relatively, with low cost because of its structure, as the solar cell of a new generation and receive global concern, is considered to replace the novel solar battery of silicon solar cell.DSSC mainly contains following a few part and forms: light anode, electrolyte and negative electrode.Light anode and negative electrode are made the cavity of sealing, and electrolyte is poured in this cavity, has so just formed the DSSC unit.The light anode mainly is made of transparent conductive substrate and nanometer crystal semiconductor film, and negative electrode mainly is made up of transparent conductive substrate and platinum Catalytic Layer.

The efficient of the DSSC of small size surpasses 11%, in order to make the dye sensitization solar cell module of practicability, the functional module of BIPV for example, above small size DSSC unit is carried out internal series-connection be made into more large-area battery, and even make assembly with outside ways of connecting, have higher using value.Operating voltage height, the power of DSSC internal series-connection module are big, can be used as the power supply of electronic device.

Summary of the invention:

The purpose of this invention is to provide that a kind of technology is simple, the internal series-connection method of large-area preparation DSSC.

Purpose of the present invention is achieved through the following technical solutions:

A kind of internal series-connection method of DSSC, comprise upper and lower two transparent conducting glass substrates, described transparent conducting glass substrate is meant the clear glass of surface deposition nesa coating, it is characterized in that: carve at the conducting surface of described two conducting glass substrates be parallel to each other, groove that spacing is certain, the not conducting of conducting surface of groove both sides; Arranging the nanometer crystal semiconductor film and the platinum Catalytic Layer of absorbing dye on the conducting surface that is separated by groove on the described conducting glass substrate, between groove across the metallizing conductive layer; Described nanometer crystal semiconductor film and platinum Catalytic Layer adjacent spaces are arranged, the nanometer crystal semiconductor film that one substrate is arranged is more than the platinum Catalytic Layer, as negative pole, the platinum Catalytic Layer that another substrate is arranged is more than nanometer crystal semiconductor film one row, as positive pole, with the nesa coating of insulator-coating at positive pole, on groove and the metal conducting layer, and be not coated in last row platinum Catalytic Layer adjacent metal conductive layer on, then with negative pole and anodal stack, make the insulating material of sealing through heating and pressurizing, form the cavity of a plurality of sealings between two conducting glass substrates, and make soldering-tin layer on each side metal conducting layer of two uncoated insulating material of conducting glass substrate and the nesa coating, as outer electrode, realize the welding of battery and outside line; Inject electrolyte in the cavity, the anode of adjacent cavity and negative electrode are by conducting surface and metal conducting layer conducting, thus the internal series-connection of realization battery.

Described nesa coating is meant tin-doped indium oxide film or fluorine doped tin oxide film or Al-Doped ZnO film.

Described groove is to adopt laser ablation or chemical etching or mechanical grinding to make, and the degree of depth of groove is more than or equal to the thickness of the nesa coating on the transparent conducting glass substrate.

Described nanometer crystal semiconductor film is meant the nano-crystal film of titanium oxide or zinc oxide, comprises nano-porous film, nano-wire array film, nano-stick array thin film, nano-pipe array thin film, and film thickness is between 5 microns to 50 microns.

Described platinum catalyst layers is to make by silk screen printing or spin-coating or dipping method of pulling up, chloroplatinic acid colloidal sol is coated on the substrate conducting face, through sintering 2～3h between the room temperature to 500 ℃, make the platinum Catalytic Layer, thickness is between 100 nanometer to 600 nanometers.

The insulating material of described sealing is meant cryogenic glass powder or thermoplastic polymer film such as Surlyn (sarin ionization resin), and thickness is between 25 microns to 100 microns.

Described metal conducting layer is meant that the mixture of silver powder or nickel powder or copper powder, glass dust, polymer binder and terpinol passes through room temperature to 570 ℃ sintering and made in 3～4 hours.

The tin cream that described soldering-tin layer is meant coating is through being heating and curing and making.

Described chloroplatinic acid colloidal sol is meant the mixture of chloroplatinic acid, ethyl cellulose and terpinol.

The invention provides the internal series-connection method of large-area preparation DSSC, simultaneously also be the preparation method of a kind of alternative building roof with the photovoltaic device of watt material, it is simple to implement the required equipment of this method, can realize the making of large tracts of land photovoltaic device, can realize the making of the photovoltaic device of different colours, the device good looking appearance is generous, color is diversified, stable performance, can be directly used in the building roof, realizes the BIPV application.

Description of drawings:

The schematic cross-section of accompanying drawing internal series-connection dye sensitization solar cell module of the present invention

Among the figure: 101-transparent glass substrate, 102-nesa coating, 103-groove, 104-metal conducting layer, 105-platinum Catalytic Layer, 106-nanometer crystal semiconductor film, the insulating material of 107-sealing, 108-soldering-tin layer, 109-dyestuff adsorption layer, 110-electrolyte, 111-positive pole, 112-negative pole.

Embodiment:

Below in conjunction with accompanying drawing the present invention is described in further detail:

Shown in accompanying drawing, by spray pyrolysis or sol-gel or magnetron sputtering or chemical vapour deposition (CVD) or pulse laser sediment method, at transparent glass substrate 101 surface deposition nesa coatings 102; Described nesa coating is meant tin-doped indium oxide (ITO) film or fluorine doped tin oxide (FTO) film or Al-Doped ZnO (ZAO) film.

By laser ablation or chemical etching or mechanical grinding method, on nesa coating 102 and transparent glass substrate 101, make groove 103 and depth of groove thickness more than or equal to nesa coating 102.

By silk screen printing, coated with conductive metal paste on the groove in every interval was made metal conducting layer 104 in 3～4 hours through room temperature to 570 ℃ sintering.Described conductive metal slurry is meant the mixture of silver powder or nickel powder or copper powder, glass dust, polymer binder and terpinol.

By silk screen printing or spin-coating or dipping method of pulling up, chloroplatinic acid colloidal sol is coated on the nesa coating 102 at interval, through sintering 2～3h between the room temperature to 500 ℃, make platinum catalyst layers 105, thickness is between 100 nanometer to 600 nanometers.Described chloroplatinic acid colloidal sol is meant the mixture of chloroplatinic acid, ethyl cellulose and terpinol.

By silk screen printing or electro-deposition or sputter or spin-coating or dipping method of pulling up, coating semiconductor material on nesa coating 102 is made nanometer crystal semiconductor film 106 through sintering.Described nanometer crystal semiconductor film 106 is meant the nano-crystal film of titanium oxide or zinc oxide, comprises nano-porous film, nano-wire array film, nano-stick array thin film, nano-pipe array thin film, and film thickness is between 5 microns to 50 microns.Above-mentioned nanometer crystal semiconductor film and platinum Catalytic Layer adjacent spaces arrangement, the nanometer crystal semiconductor film that one substrate is arranged is more than platinum Catalytic Layer one row, as negative pole 111, the platinum Catalytic Layer that another substrate is arranged is more than nanometer crystal semiconductor film one row, as anodal 112.

By the design size requirement, with insulator-coating on anodal 112 nesa coating 102, groove 103 and metal conducting layer 104, and be not coated in last row platinum Catalytic Layer adjacent metal conductive layer on, with negative pole 111 and anodal 112 stacks, make the insulating material 107 of sealing through heating and pressurizing then; After the insulating material 107 of sealing is made, the structure of sealing and inner a plurality of cavitys around negative pole 111 forms with anodal 112; The insulating material of described sealing is cryogenic glass powder or thermoplastic polymer film such as Surlyn (sarin ionization resin), and thickness is between 25 microns to 100 microns.Described cryogenic glass powder is meant the mixture of being made up of sodium oxide molybdena, silica, zinc oxide, phosphorous oxide, cupric oxide, lithia, magnesium oxide, boron oxide etc.

By the automatic or manual printing, respectively anodal 112 and negative pole 111 edges do not seal on the metal conducting layer 104 of a side and the nesa coating 102 and apply tin cream, the soldering-tin layer of making through being heating and curing 108 is realized the welding of battery and outside line as outer electrode.

By circulating device, dyestuff is poured in the battery cavity, soak some hrs and carry out sensitization, dyestuff is adsorbed on and forms dyestuff adsorption layer 109 on the nanometer crystal semiconductor film 106; Then, electrolyte 110 is injected battery cavity and sealing injection aperture.Described electrolyte 110 is a kind of in liquid electrolyte, ionic liquid electrolyte, quasi-solid electrolyte, the polymer dielectric.

Claims

1. the internal series-connection method of a DSSC, comprise upper and lower two transparent conducting glass substrates, described transparent conducting glass substrate is meant the clear glass of surface deposition nesa coating, it is characterized in that: carve at the conducting surface of described two conducting glass substrates be parallel to each other, groove that spacing is certain, the not conducting of conducting surface of groove both sides; Arranging the nanometer crystal semiconductor film and the platinum Catalytic Layer of absorbing dye on the conducting surface that is separated by groove on the described conducting glass substrate, between groove across the metallizing conductive layer; Described nanometer crystal semiconductor film and platinum Catalytic Layer adjacent spaces are arranged, the nanometer crystal semiconductor film that one substrate is arranged is more than the platinum Catalytic Layer, as negative pole, the platinum Catalytic Layer that another substrate is arranged is more than nanometer crystal semiconductor film one row, as positive pole, with the nesa coating of insulator-coating at positive pole, on groove and the metal conducting layer, and be not coated in last row platinum Catalytic Layer adjacent metal conductive layer on, then with negative pole and anodal stack, make the insulating material of sealing through heating and pressurizing, form the cavity of a plurality of sealings between two conducting glass substrates, and make soldering-tin layer on each side metal conducting layer of two uncoated insulating material of conducting glass substrate and the nesa coating, as outer electrode, realize the welding of battery and outside line; Inject electrolyte in the cavity, the anode of adjacent cavity and negative electrode are by conducting surface and metal conducting layer conducting, thus the internal series-connection of realization battery.

2. the internal series-connection method of DSSC as claimed in claim 1, it is characterized in that: described nesa coating is meant tin-doped indium oxide film or fluorine doped tin oxide film or Al-Doped ZnO film.

3. the internal series-connection method of DSSC as claimed in claim 1, it is characterized in that: described groove is to adopt laser ablation or chemical etching or mechanical grinding to make, and the degree of depth of groove is more than or equal to the thickness of the nesa coating on the transparent conducting glass substrate.

4. the internal series-connection method of DSSC as claimed in claim 1, it is characterized in that: described nanometer crystal semiconductor film is meant the nano-crystal film of titanium oxide or zinc oxide, comprise nano-porous film, nano-wire array film, nano-stick array thin film, nano-pipe array thin film, film thickness is between 5 microns to 50 microns.

5. the internal series-connection method of DSSC as claimed in claim 1, it is characterized in that: described platinum Catalytic Layer is to make by silk screen printing or spin-coating or dipping method of pulling up, chloroplatinic acid colloidal sol is coated on the substrate conducting face, through sintering 2～3h between the room temperature to 500 ℃, make the platinum Catalytic Layer, thickness is between 100 nanometer to 600 nanometers.

6. the internal series-connection method of DSSC as claimed in claim 1, it is characterized in that: the insulating material of described sealing is meant cryogenic glass powder or thermoplastic polymer film, thickness is between 25 microns to 100 microns.

7. the internal series-connection method of DSSC as claimed in claim 1 is characterized in that: described metal conducting layer is meant that the mixture of silver powder or nickel powder or copper powder, glass dust, polymer binder and terpinol made through room temperature to 570 ℃ sintering in 3～4 hours.

8. the internal series-connection method of DSSC as claimed in claim 1 is characterized in that: described soldering-tin layer is meant that the tin cream of coating is through being heating and curing and making.

9. the internal series-connection method of DSSC as claimed in claim 5, it is characterized in that: described chloroplatinic acid colloidal sol is meant the mixture of chloroplatinic acid, ethyl cellulose and terpinol.