CN101203355A - Polishing pad comprising magnetical sensitive particles and method for the use thereof - Google Patents
Polishing pad comprising magnetical sensitive particles and method for the use thereof Download PDFInfo
- Publication number
- CN101203355A CN101203355A CNA2006800224133A CN200680022413A CN101203355A CN 101203355 A CN101203355 A CN 101203355A CN A2006800224133 A CNA2006800224133 A CN A2006800224133A CN 200680022413 A CN200680022413 A CN 200680022413A CN 101203355 A CN101203355 A CN 101203355A
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- China
- Prior art keywords
- polishing pad
- magnetic field
- polishing
- magnetical
- sensitive particles
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/005—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/14—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides polishing pads comprising a deformable polishing pad body and magnetically sensitive particles dispersed therein, wherein one or more properties of the polishing pad are altered when in the presence of an applied magnetic field. The invention further provides a polishing system and a method for polishing a substrate involving such a polishing pad.
Description
Technical field
The present invention relates to a kind of polishing pad that is used for chemical-mechanical polishing.
Background technology
Chemical-mechanical polishing (" CMP ") process is used to make microelectronic device to form flat surfaces on semiconductor wafer, integrated circuit, Field Emission Display and many other microelectronic substrates.For example, the manufacturing of semiconductor device generally comprise form various process layers, to the part of these layers carry out selective removal or patterning, and above semiconductor substrate surface the extra process layer of deposition to form integrated circuit.For instance, these process layers can comprise insulating barrier, grid oxic horizon, conductive layer, reach the layer of metal or glass etc.The uppermost surface that generally requires process layer in some step of this process is the plane, and is promptly smooth, to be used to deposit follow-up layer.CMP is used for the planarization of process layer, wherein such as conduction or the deposition materials of insulating materials through polishing so that wafer planeization and be used for follow-up treatment step.
In typical CMP process, wafer is inverted and is installed on the carrier of CMP instrument.By power, this carrier and this wafer are promoted downwards towards polishing pad.Carrier and wafer are rotated above the rotating polishing pad on the polishing block that is positioned at this CMP instrument.Polishing composition (being also referred to as polishing slurries) generally is being added to during the polishing process between rotation wafer and the rotating polishing pad.This polishing composition contains usually and interacts with the part of topmost wafer layer or the chemical substance of the part of dissolving topmost wafer layer, and the grinding-material that physically removes the part of this (or these) layer.Wafer and polishing pad can equidirectionals or the rightabout rotation, and in order to carry out specific polishing process, no matter any rotation mode all needs.This carrier also can vibrate across the polishing pad on the polishing block.
The polishing pad that is used for the chemical-mechanical polishing process can utilize soft and the manufacturing of hard gasket material, and it comprises polymer impregnated fabric, microporous membrane, porous polymer foaming body, non-porous polymer thin slice, reaches the sintering thermoplastic particles.Containing the liner that impregnated in the polyurethane resin in the polyester non-woven fabric is the illustration of polymer impregnated fabric polishing pad.
Although at the improvement of the polishing pad that is used for CMP, this polishing pad is generally retaining element to notice in the CMP process.That is to say that in case polishing pad is selected and come into operation, then the physical features of polishing pad is immutable during the chemical-mechanical polishing operating process.Yet, when the surface through polishing and when approaching flatness, the surface characteristics of the substrate that is polished experience changes.Therefore, during polishing operation, still need to control polishing pad, polishing system and the finishing method of polishing pad feature.
The invention provides this polishing pad, system and method.By description of the invention provided herein, will make these and other advantage of the present invention and extra inventive features become distinct.
Summary of the invention
The invention provides a kind of polishing pad that comprises deformable polishing pad main body and be scattered in magnetical sensitive particles (magnetically sensitive particle) wherein, wherein when having externally-applied magnetic field, one or more character of this polishing pad can change.The present invention also provides a kind of polishing system, it comprises (a) polishing pad and (b) the adjustable magnetic field of intensity, wherein, this polishing pad comprises deformable polishing pad main body and is scattered in wherein magnetical sensitive particles, wherein when having externally-applied magnetic field, one or more character of this polishing pad can change, and the adjustable magnetic field of this intensity is arranged on the position of approaching this polishing pad.The present invention further provides a kind of method of polishing substrate, it comprises that (a) provides polishing pad, this polishing pad comprises deformable polishing pad main body and is scattered in wherein magnetical sensitive particles, wherein when having externally-applied magnetic field, one or more character of this polishing pad can change, and (b) with this polishing pad and substrate contacts, (c) apply magnetic field to this polishing pad, and (d) move this polishing pad, thereby polish this substrate with respect to this substrate.
The specific embodiment
The invention provides polishing pad, it comprises deformable polishing pad main body and is scattered in wherein magnetical sensitive particles, and wherein when having externally-applied magnetic field, one or more character of polishing pad can change.When magnetic field was applied to polishing pad of the present invention, the magnetical sensitive particles that deformable polishing pad main body contains was repelled or attraction by this magnetic field, and this deformable polishing pad main body is applied power.This power causes polishing pad bulk deformation (for example, extending or contraction with one or more dimensions), and its change comprises one or more character of the polishing pad of deformable polishing pad main body.Therefore, polishing pad of the present invention allows the user during use by applying magnetic field to polishing pad and the character of customized polishing pads.
In this article, term " externally-applied magnetic field " refers to and removes outside any natural magnetic field (for example, the magnetic field of the earth), is applied to the magnetic field of polishing pad of the present invention, and it can be present in the ad-hoc location that uses polishing pad.In this article, term " magnetical sensitive particles " refers to any particle that is subjected to externally-applied magnetic field to attract or repel.
Magnetical sensitive particles can comprise inorganic particulate, organic filler, or the mixture of inorganic and organic filler.Inorganic magnetic induction particle is known in the art, and comprises Fe
3O
4, Nd-Fe-B, Ba-Sr ferrite, Ni-Zn-Cu ferrite, SmCo
5, Sm
2Co
17, iron, steel and composition thereof.Organic (or metal-organic) magnetical sensitive particles that uses according to the present invention comprises that the editor is P.Day and A.F.Underhill (The Royal Society of Chemistry, Cambridge, 1999) " Metal-Organicand Organic Molecular Magnets ", and the editor is Lahcene Ouahab and EduardYagubskii (KluwerAcademic Publishers, 2004) those particles described in " Organic Conductors, Superconductors and Magnets:From Synthesis to Molecular Electronics ".Preferably, organic or metal-organic filler is selected from: the V[tetracyanoethylene]
～2, V[Cr (CN)]
～0.9, Cr (tetracyanoethylene)
2, KV[Cr (CN)
6], and C-60 fullerene, wherein any all can further comprise the relief molecule (molecule of salvation) that depends on synthetic method (for example, V[Cr (CN)]
～0.92.8H
2O, KV[Cr (CN)
6] 2H
2O, and analog).
Can use though magnetical sensitive particles need not any particular procedure, in some cases, for example, may need to apply dispersiveness or the adherence of this particle with magnetical sensitive particles in the material of improvement deformable polishing pad.Can use any suitable coating, condition is the magnetic induction (magnetic sensitivity) that this coating can not disturb or eliminate particle basically.Useful coating comprises polymer coating, such as comprising polyurethane, nylon, polyethylene or any other gives the coating of the polymer of the required character of particle.
Deformable polishing pad main body can comprise the magnetical sensitive particles of any suitable quantity.The quantity of magnetical sensitive particles will influence the degree that deformable polishing pad main body is responded externally-applied magnetic field.The quantity that increases magnetical sensitive particles can increase the degree that deformable polishing pad main body is out of shape usually in the presence of externally-applied magnetic field, and therefore increases the degree that polishing pad character changes.The quantity of responding to particle that deperms generally has reverse effect.Polishing pad of the present invention can comprise 0.1 weight % or more (for example, 5 weight % or more or 10 weight % or more) magnetical sensitive particles, such as 20 weight % or more (for example, 30 weight % or more) or the magnetical sensitive particles of 40 weight % or more (for example, 60 weight % or more).Usually, polishing pad of the present invention comprises 60 weight % or magnetical sensitive particles still less, and can comprise 40 weight % or still less, such as 20 weight % or still less (for example, 10 weight % still less or 5 weight % or still less) magnetical sensitive particles.
Magnetical sensitive particles can have any suitable average grain diameter.In this article, term " average grain diameter " refers to the average diameter based on numeral.Usually, magnetical sensitive particles has 5 μ m or littler average grain diameter, such as 3 μ m or littler, or even 1 μ m or littler.The average grain diameter of magnetical sensitive particles is generally in the scope of 0.1 to 5 μ m, such as 0.3 to 3 μ m, or even 0.5 to 1 μ m.Magnetical sensitive particles can have any suitable shape, comprise sphere, cuboid, cube, thin slice, aciculiform, and composition thereof.
The deformable polishing pad main body that comprises magnetical sensitive particles can be made by any suitable material, and condition is, the character of the polishing pad when existing with respect to no magnetic field, and the character of the polishing pad when applying magnetic field can change.Certainly, externally-applied magnetic field not only depends on the material of polishing pad to the influence of polishing pad character, and depends on the concentration and the externally-applied magnetic field intensity of the magnetical sensitive particles that exists in the polishing pad.Therefore, specific liner configuration and required application are depended in the selection of the certain material that uses.
Generally speaking, deformable polishing pad main body comprises elastomeric material, such as natural or synthetic elastomeric polymer.Suitable polymers comprise elastomer, polyurethane, polyolefin, Merlon, polyvinyl alcohol, nylon, natural and synthetic rubber, styrenic polymer, polyaromatic (polyaromatics), fluoropolymer polymer, polyimides, cross-linked polyurethane, heat-curable urethane, cross-linked polyolefin, polyethers, polyester, polyacrylate, elastic polyethylene, its copolymer and block copolymer, and composition thereof and blend.
The polishing pad that comprises deformable polishing pad main body and magnetical sensitive particles can have any suitable storage modulus.When no externally-applied magnetic field existed, the storage modulus of polishing pad was generally 100 to 1000MPa, such as 400 to 900MPa or even 450 to 800MPa (for example, 500 to 700MPa).Polishing pad can be through setting up to have low storage modulus, and it is used applicable to some.Therefore, polishing pad of the present invention can have 350MPa or storage modulus still less (for example, 0.1MPa to 350MPa is such as 1MPa to 350MPa, or 10MPa to 350MPa, or even 100MPa to 350MPa).Can determine the storage modulus of polishing pad according to the scheme of reporting among the ASTMD790 (protocol).
The polishing pad that comprises deformable polishing pad main body and magnetical sensitive particles can have any suitable compressibility.The compressibility general provision is to the change percentage of polishing pad thickness under the fixed load (for example, to the thickness of polishing pad under the fixed load and the percentage of initial polishing mat thickness (non-loaded)).Be used for determining that the compressible method for optimizing of polishing pad comprises: the thickness (D1) of polishing pad when (a) determining no any applied load, (b) (for example impose on fixed load to polishing pad, 32kPa (4.7psi)) one minute with the compression polishing pad, (c) determine the thickness (D2) of the polishing pad that this is compressed, and (d) determine compression percentages according to following relationship:
Compression percentages (%)=[(D1-D2)/D1] * 100.
Can determine the compressibility of polishing pad by means of commercially available instrument (for example, " Ames Meter " type BG2500-1-04 of B.C.Ames Inc. manufacturing).When no externally-applied magnetic field existed, the average compression percentages of polishing pad was generally 2% or higher under the 32kPa load, such as 4% or higher, or even 10% or higher (for example 15% or higher, or even 20% or higher).Compressibility is generally in 2% to 50% scope, such as 4% to 40% or 10% to 30%.
The polishing pad that comprises deformable polishing pad main body and magnetical sensitive particles can have any suitable resilience.Resilience is expressed as resilience percentage usually.The method for optimizing of determining the resilience percentage of polishing pad comprises: the thickness (D1) of polishing pad when (a) determining no any applied load, (b) (for example impose on fixed load to polishing pad, 32kPa (4.7psi)) one minute with the compression polishing pad, (c) determine the thickness (D2) of the polishing pad that this is compressed, (d) remove load and allow polishing pad resilience one minute from polishing pad, (e) determine the thickness (D3) of the polishing pad of this resilience, and (f) determine the resilience percentage of polishing pad according to following relationship:
Resilience percentage (%)=[(D3-D2)/(D1-D2)] * 100.
Identical with compressibility, the resilience percentage of polishing pad can be determined by means of commercially available instrument, all " Ames Meter " as the aforementioned.Use for great majority, need polishing pad in the presence of no externally-applied magnetic field, still to have high resilience percentage.Therefore, after applying 32kPa (4.7psi) load, polishing pad preferably has 50% or higher resilience percentage, such as 60% or higher or even 85% or higher.Certainly, 25% or higher low resilience percentage (for example, 30% higher or 40% or higher) applicable to some application.
The polishing pad that comprises deformable polishing pad main body and magnetical sensitive particles can have any suitable hardness.Can for example measure hardness according to using scleroscopic Shore (Shore) method according to ASTM D-2240-95.Therefore, polishing pad of the present invention can have the Shore hardness of 40A to 90D.Usually, no externally-applied magnetic field exists down, and the Shore hardness of polishing pad is 90D or lower, such as 70D or lower or even 50D or lower (the wherein hardness of numbering " D " expression Shore " D " level), and in the scope of 40D to 90D, such as 50D to 80D.For need be than the application of soft polishing pad, polishing pad of the present invention can be through setting up to have 40A or higher (for example, 40A to 90A) or 60A or higher (for example, 60A to 90A) or even the Shore hardness of 70A or higher (for example, 70A to 90A).
The polishing pad that comprises deformable polishing pad main body and magnetical sensitive particles can be made by any appropriate method.Many these class methods are well known in the art.Suitable method comprises casting, cutting, reaction injection molding, injection-blow molding, compression forming, sintering, thermoforming or selected material is pressed into required form.This polymer is generally the preformed polymer; However, this polymer also can be according to any appropriate method formed in situ, and many these class methods are well known in the art (for example, referring to Szycher ' sHandbook of Polyurethanes, CRC Press:New York, 1999, the 3 chapters).For example, thermoplastic polyurethane can pass through carbamate prepolymer (such as, isocyanates, vulcabond, and the triisocyanate prepolymer) original position forms with the reaction of the prepolymer that contains the isocyanate-reactive part.Suitable isocyanate-reactive partly comprises amine and polyalcohol.Also can use foamable polymer, such as the polyurethane foam polymer, it mainly comprises perforate or closed pore, or the mixture of perforate and closed pore.The technology that is used for foamable polymer has been described in the prior art, and it comprises mucell method, phase inversion method, spinodal or double-peak type decomposition method, reaches the gas-pressurized method for implanting.Preferably, use mucell method or gas-pressurized method for implanting to make polishing pad.
The polishing pad and the deformable polishing pad main body that comprise magnetical sensitive particles can have any suitable shape.Usually, polishing pad and deformable polishing pad main body be shaped as band shape, disk or plane polygon three-dimensional shape (for example cuboid), its comprise two wide surfaces that front portion and rear portion " surface " are provided and be positioned at polishing pad and deformable polishing pad body peripheral edge on one or more edge surfaces.When using in the device of rotating polishing pad and deformable polishing pad main body, polishing pad and deformable polishing pad main body have the rotating shaft on perpendicular to this " surface ".
Magnetical sensitive particles generally is distributed in during the liner manufacturing in the material of deformable polishing pad main body.Can any suitable method influence the distribution of magnetical sensitive particles.For example, before material is formed required form, can pass through mixing or blend combination of materials with magnetical sensitive particles and deformable polishing pad.
Magnetical sensitive particles can be distributed in the material of deformable polishing pad main body equably, and so that the even distribution of magnetical sensitive particles to be provided, or magnetical sensitive particles can non-homogeneous mode distribute.For example, magnetical sensitive particles can concentrate in the specific thicknesses of deformable polishing pad main body, such as one or two surface of deformable polishing pad or near, or at the mid-depth place of deformable polishing pad main body.Magnetical sensitive particles also can concentrate on from one or more distances (distances) of the rotating shaft of deformable polishing pad main body and locate, such as deformable polishing pad body peripheral edge place or near, or approach rotating shaft.Selectively, magnetical sensitive particles can be distributed in the selection area of polishing pad.Preferably, the mode of edge effect (for example, reducing the trend that substrate edges polishes with the speed that is different from other parts of substrate) was distributed in the polishing pad during magnetical sensitive particles polished with reduction.
When distributing in non-homogeneous mode, magnetical sensitive particles can be distributed in unique concentrated area, or can distribute along concentration gradient.For example, magnetical sensitive particles can be sentenced maximum concentration in deformable polishing pad body peripheral edge and exist, and it has the concentration gradient that reduces gradually towards rotating shaft, or vice versa (for example, pad center concentration is the highest, and reduces gradually towards rotating shaft concentration).The gradient of same type also can be set up on the whole thickness direction of liner.For example, the concentration of magnetic particle can be the highest in the surface and reduces towards center thickness, or vice versa.Selectively, the concentration of magnetic particle can be from a surface stablely increases or reduces to the apparent surface.The gradient of magnetical sensitive particles concentration can be linearity or nonlinear in the deformable polishing pad main body.
The non-uniform Distribution of magnetical sensitive particles can be finished by any appropriate method in the deformable polishing pad main body.For example, the sedimentation character of the magnetical sensitive particles of dissimilar or size is used in the concentration gradient in the material of setting up the deformable polishing pad before the moulding.Equally, can use layer or part to form deformable polishing pad main body with variable concentrations magnetical sensitive particles.Selectively, magnetical sensitive particles can be embedded with any appropriate pattern or gradient in the pad interface of moulding, subsequently under optional applied pressure, the material of deformable polishing pad main body is heated to its flowing temperature, so that particle is incorporated in this material.To those skilled in the art, the additive method that is used for the non-uniform Distribution of deformable polishing pad main body particle is comprehensible.
Polishing pad of the present invention can be configured as headliner or secondary liner.In many finishing methods, headliner is the polishing pad that actual and just polished substrate surface contacts.Therefore, headliner comprises polished surface.Secondary liner is under headliner and the support, top liner.When being configured as headliner, polishing pad of the present invention is used in combination with secondary liner usually.Selectively, when being configured as headliner, polishing pad of the present invention is used in combination with secondary liner usually.
The present invention also comprises the polishing pad that is configured as with the headliner of secondary liner combination, any one or two kinds of magnetical sensitive particles that comprise in wherein secondary liner or the headliner.According to this aspect of the present invention, can provide headliner and secondary liner by the different layers of independent polymer flake or by the independent polymer flake of uniting or combine.When providing headliner and secondary liner, be desirably under the situation that need not to use sticker (for example, need not get involved adhering agent layer) and make headliner polymer flake and the associating of secondary liner polymer flake by independent polymer flake.For example, headliner thin slice and secondary thin sheet of pad can be by welding (for example ultra-sonic welded), hot adhesion, radioactivation bonding, laminations, or coextrusion and engaging.Selectively, can provide headliner and secondary liner by the different layers or the part of independent polymer flake.For example, the single polymer layer thin slice can experience one or two Surface Physical character that changes this single polymer layer thin slice, and so that the process of ELECTRODE WITH BILAYER POLYMERIC thing thin slice to be provided, one of them layer is used as secondary liner as headliner and another layer.For example, can make the foaming of solid polymer thin slice selectivity, thereby porosity is introduced in the surface of this polymer flake, formed ELECTRODE WITH BILAYER POLYMERIC thing thin slice (for example, double-deck polishing pad) with the porous layer that need not to use sticker can be attached to solid layer.One deck in these layers provides headliner, and other layers provide secondary liner.One deck of polishing pad or the two-layer magnetical sensitive particles that comprises.According to above configuration any, preferably provide secondary liner by the porous layer that comprises magnetical sensitive particles.
When being configured as the combination of headliner/secondary liner or during as the monolithic polishing pad, polishing pad of the present invention can further comprise polished surface.Can provide this polished surface by the adhesion or the individual member bed of material that is soldered to deformable polishing pad body surfaces, or can provide this polished surface by the surface of deformable polishing pad main body.When providing polished surface by the individual member bed of material, can be by any appropriate method, such as (for example passing through friction, no intervening layer), shackle-type interlock fabric, vacuum, magnetic force, various adhesion compound and adhesive tape, use chemical substance, heat and/or pressure " welding " these layer or other the whole bag of tricks, with this polished surface adhesion or be soldered on the surface of deformable polishing pad main body.Usually, will be arranged between polishing layer and the secondary liner such as the interlining layer of pet film.The configuration of polishing pad of the present invention can optionally be used in combination with secondary liner.
No matter the surface by deformable polishing pad main body provides or is provided by the individual member bed of material, and polished surface can comprise any suitable material, such as front any or multiple in the mentioned polymer in the content about deformable polishing pad main body.This material can be same as or be different from the material of deformable polishing pad main body.Usually, polished surface comprises atresia polyurethane.
Polished surface can further comprise groove, raceway groove and/or perforation, and it helps the lateral transfer of polishing composition on whole pad interface.This groove, raceway groove or perforation can be any appropriate pattern, and can have any suitable degree of depth and width.Polished surface can have two or more different groove pattern, such as the combination of big groove and little groove, as United States Patent (USP) the 5th, 489, described in No. 233.The example of suitable groove pattern comprises inclined groove, concentric grooves, spirality or circular groove, reaches XY crosshatch pattern (crosshatch pattern), and just connective, it can be continuous or discontinuous.Preferably, polished surface comprises the little groove of making by the standard liner control method at least.
Polished surface can not contain magnetical sensitive particles, maybe can comprise the magnetical sensitive particles of any suitable quantity.Concentration and distribution that available aforementioned same way as about deformable polishing pad main body disposes magnetical sensitive particles in the polished surface.In given polishing pad according to the present invention, the concentration of magnetical sensitive particles and distribution can be same as or be different from the concentration and the distribution of magnetical sensitive particles in the deformable polishing pad main body in the polished surface.
When polished surface comprised magnetical sensitive particles, this particle was preferably through the surface coated with the particle scraping substrate that prevents any exposure during polishing.Selectively, the magnetical sensitive particles that is used for polished surface can be made by the material of the just polished substrate surface of can not swiping, such as non-abrasiveness metal-organic or organic filler.Must according to the particular type of just polished substrate determine the non-abrasiveness particle of given type be abrasiveness also be non-abrasiveness.Magnetical sensitive particles is usually located in the polishing pad, makes it can not protrude from pad interface during polishing.Yet magnetical sensitive particles can be arranged in polishing pad, makes it protrude so that the abrasiveness polished surface is provided from the surface.When having magnetic field, the magnetical sensitive particles that protrudes from pad interface serves a dual purpose, and, provides fixed abrasive and the change that polishing pad character is provided as described herein in polishing pad that is.
Polishing pad of the present invention can be through setting up to be used in combination with the original position polishing endpoint detection system.In-situ endpoint detection generally comprises, and during polishing, uses up or other forms of radiation comes the surface of analytic substrate by making, so that determine the terminal point of polishing process.Desirably, polishing pad of the present invention comprises opening (port) or lyriform pore, and it provides light or other forms of radiation is feasible and then the path of arrival substrate surface.Can be by the thickness that runs through any other layer that deformable polishing pad main body, polished surface, secondary liner and polishing pad comprise and the hole that forms provides this opening or lyriform pore.Selectively, polishing pad can comprise the light that uses in the detection technique or other radiation are translucent or the transparent suitable polymers or " window " of other materials.The opening of employed particular type or lyriform pore depend on selected specific endpoint Detection and for reaching the type of the radiation that this purpose uses.Check and monitor that the technology of polishing process is well known in the art by analyzing from the light of surface of the work reflection or other radiation.For example, United States Patent (USP) the 5th, 196, No. 353, United States Patent (USP) the 5th, 433, No. 651, No. the 5th, 609,511, United States Patent (USP), United States Patent (USP) the 5th, 643, No. 046, No. the 5th, 658,183, United States Patent (USP), United States Patent (USP) the 5th, 730, No. 642, No. the 5th, 838,447, United States Patent (USP), United States Patent (USP) the 5th, 872, No. 633, No. the 5th, 893,796, United States Patent (USP), United States Patent (USP) the 5th, 949, No. 927, and No. the 5th, 964,643, United States Patent (USP) in this class methods are described.
When magnetic field being applied to the polishing pad that comprises deformable polishing pad main body, one or more character of the deformable polishing pad main body polishing pad of deformable polishing pad main body (or comprise) can change, and expectation changes to the degree of the polishing performance that is enough to influence polishing pad.The character that changes can be any character of polishing pad, comprises storage modulus, compressibility, resilience, reaches hardness.The preferred disposition of polishing pad comprises the deformable polishing pad main body that contains magnetical sensitive particles, wherein, the quantity of this magnetical sensitive particles makes when (for example having 1 to 1000 Gauss, 5 to 500 Gausses, 10 to 250 Gausses or 50 to 200 Gausses) externally-applied magnetic field the time, compare with the polishing pad that does not have externally-applied magnetic field, in these character one or more will change 5% or more (for example, 10% or more), such as 15% or more (for example, 20% or more) or even 25% or more (for example, 30% or more).
Polishing of the present invention is paid somebody's debt and expected repayment later and can be comprised other polishing pad elements, such as enhancement Layer, extra secondary liner, adhering agent layer, lining material (backing material), and other typical components.
The present invention further provides a kind of polishing system, it comprises (a) polishing pad, this polishing pad comprises deformable polishing pad main body and is scattered in wherein magnetical sensitive particles, wherein when having externally-applied magnetic field, one or more character of this polishing pad can change, reach (b) the adjustable magnetic field of intensity, this magnetic field is arranged on the position of approaching polishing pad.The polishing pad of this polishing system such as abovely describe about polishing pad of the present invention.
The adjustable magnetic field of this intensity can be provided by any appropriate device, such as magnet or electromagnet.The magnetic field (for example, variable on the intensity continuum) of intensity variable and the magnetic field of multiple intensity (for example, having multiple constant intensity sets) contained in term herein " intensity can be adjusted ".When the adjustable magnetic field of intensity was provided by the magnetic field with multiple constant intensity setting, preferably this magnetic field had more than two kinds of intensity settings (for example, reach " pass " more than " opening " and set), to obtain the adaptability of bigger change polishing pad character.For example, can be by increasing or reduce delivery, or by making polishing pad avoid the influence in magnetic field with big or lesser extent, thus the intensity of adjusting.The adjustable feature of the intensity in magnetic field allows the user of polishing system to change magnetic field intensity during use, thus the character of control polishing pad.When magnetic field intensity increased, the power that is applied on the deformable polishing pad main body by magnetical sensitive particles increased, and the character of polishing pad that comprises deformable polishing pad main body is to change largely.Similarly, when magnetic field intensity reduced, the character of polishing pad changed with less degree.
The adjustable magnetic field of intensity is arranged on the position of approaching polishing pad.For reaching purpose of the present invention,, think that then the adjustable magnetic field of this intensity " approaching " is in polishing pad if the adjustable magnetic field of intensity enough changes one or more character of polishing pad near polishing pad.The adjustable magnetic field of intensity can be positioned any correct position with respect to polishing pad.For reaching purpose of the present invention, think that magnetic field has the line of force that is parallel to magnetic field gravitation and repulsion direction.Usually, magnetic field is through locating so that the line of force is substantially perpendicular to the polished surface of polishing pad.Selectively, magnetic field can be through the location so that the polished surface of the line of force and polishing pad at angle, or even is arranged essentially parallel to the polished surface of polishing pad.Equally, magnetic field sources (for example, magnet or electromagnet) can and be located with respect to polishing pad and just polished substrate, makes substrate between magnetic field sources and polishing pad, or, preferably, make polishing pad between magnetic field sources and substrate.
The adjustable magnetic field of intensity should be able to provide enough magnetic force to change one or more character of polishing pad.The customized configuration that depends on employed polishing pad in the given application for the size of reaching the required power of this purpose.Generally speaking, it is enough can producing 1 to 1000 Gauss (for example, 5 to 500 Gausses, 10 to 250 Gausses or 50 to 200 Gausses) or the higher adjustable magnetic field of intensity.
Magnetic field intensity can manually be controlled (for example, by operator's control).When using manually control, externally-applied magnetic field is adjusted by the operator in the beginning in polishing stage or when finishing or with predetermined time interval usually, to reach or to keep required burnishing parameters (for example, removing speed, friction, roughness, depression etc.).For example, the operator who monitors material removal rate during polishing can adjust magnetic field intensity to change or to keep given material removal rate.Selectively, except that manually controlling, for example can be by using microprocessor controlling magnetic field intensity automatically.Can use automatic controls to adjust magnetic field intensity automatically according to preprogrammed instruction group or in response to the change of burnishing parameters.For example, can be by feedback mechanism be incorporated into polishing system and adjusts magnetic field automatically in response to the change of polishing condition, make by this monitor detect the change of one or more polishing conditions and transmitting signals to automatic controls with suitable adjustment magnetic field.
The present invention also provides a kind of method of polishing substrate, it comprises that (a) provides polishing pad, this polishing pad comprises deformable polishing pad main body and is scattered in wherein magnetical sensitive particles, wherein when having externally-applied magnetic field, one or more character of polishing pad can change, and (b) with polishing pad and substrate contacts, (c) apply the adjustable magnetic field of intensity to change one or more character of polishing pad to polishing pad, and (d) move polishing pad, thereby polish this substrate with respect to substrate.The adjustable magnetic field of this polishing pad and intensity such as this paper describe about polishing pad of the present invention and polishing system.
Method of the present invention is adjusted the adjustable magnetic field of intensity during can further being included in polishing.This magnetic field can manually be adjusted, or via as the above automatic controls of discussing about polishing system of the present invention and adjusting.Preferably, adjust magnetic field, with the depression (for example, improving uniformity in flatness and the mould) that reduces excessive polishing or minimizing substrate so that reach required polishing character.
Polishing pad of the present invention and polishing system are particularly suited for being used in combination with chemical-mechanical polishing (CMP) device.Usually, this device comprises (a) pressing plate, it is kept in motion in use and has the speed that is produced by track, linearity or circular motion, (b) polishing pad of the present invention, it is with this pressing plate contact and mobile with this pressing plate when being kept in motion, reach (c) carrier, it moves and the polished workpiece of fixing by contact and with respect to pad interface.The polishing of carrying out this workpiece is by workpiece being placed and the polishing pad contact position, and polishing pad moves (having polishing composition therebetween usually) with respect to workpiece subsequently, polishes this workpiece so that grind at least a portion of this workpiece.This polishing composition comprises liquid-carrier (for example, aqueous carrier) usually, pH adjusts agent, reaches optional grinding agent.According to the type of just polished workpiece, polishing composition optionally can further comprise oxidant, organic acid, complexing agent, pH buffer, surfactant, corrosion inhibiter, anti-foaming agent, reach analog.The CMP device can be any appropriate C MP device, and many these devices are well known in the art.Polishing pad of the present invention and polishing system also can be used in combination with the linear planarization instrument.
Polishing pad of the present invention, polishing system and finishing method are applicable in the finishing method of polytype workpiece (for example, substrate or wafer) and workpiece material.For example, polishing pad can be in order to polishing workpiece, this workpiece comprises memory storage device, glass substrate, memory or hard disc, metal (for example, noble metal), magnetic head, interlayer dielectric (ILD) layer, polymer thin film, the low high dielectric constant film that reaches, ferroelectric, MEMS (MEMS), semiconductor wafer, Field Emission Display, and other microelectronic substrates, especially for (for example comprising insulating barrier, silica, silicon nitride or dielectric materials) and/or metallic layer is (for example, copper, tantalum, tungsten, aluminium, nickel, titanium, platinum, ruthenium, rhodium, iridium, its alloy and composition thereof) microelectronic substrate.In addition, workpiece can comprise any suitable metal composite, can be made of any suitable metal composite basically, or can be made of any suitable metal composite.Suitable metal composite comprises, for example, metal nitride (for example, tantalum nitride, titanium nitride and tungsten nitride), metal carbides (for example, carborundum and tungsten carbide), nickel-phosphorus, aluminoborosilicate, borosilicate glass, phosphosilicate glass (PSG), boron phosphorus silicate glass (BPSG), silicon storage alloy, and silicon/germanium/carbon alloy.Workpiece also can comprise any suitable semiconductor-based bottom material, can be made of any suitable semiconductor-based bottom material basically, or can be made of any suitable semiconductor-based bottom material.Suitable semiconductor-based bottom material comprises monocrystalline silicon, polysilicon, non-crystalline silicon, silicon-on-insulator (silicon-on-insulator), reaches GaAs.
Embodiment
The following example explanation is according to the preparation and the use of polishing pad of the present invention, polishing system and finishing method.
The polishing pad that comprises deformable polishing pad main body and be scattered in magnetical sensitive particles wherein is by with polyurethane foaming body particle and magnetic iron ore (Fe
3O
4) blend and making under the temperature that is higher than the polyurethane flowing temperature.This mixture becomes the polishing pad of disc-shape through casting.
Polishing pad is installed on the pressing plate of CMP polishing machine as the secondary liner that is positioned at standard polyurethane headliner below, and patterned substrate is positioned on the polishing tool of this polishing machine and with the surface of headliner and contacts.The electromagnet of power variable through the location so that polishing pad between electromagnet and substrate, and the line of force in magnetic field is perpendicular to the surface of polishing pad.Begin to carry out glossing, and polishing composition is supplied to the surface of polishing pad and substrate.The position that electromagnet is in " pass ".After the some minutes, detect the depression in the substrate surface, and electromagnet starts with low-power.Applying of magnetic field causes secondary liner to press to pressing plate, thereby reduces the compressibility of secondary liner.Polishing continues some minutes again, and the depression in this section period metacoxal plate reduces, but still obviously.Increase the intensity of electromagnet, thereby cause secondary liner further to press to pressing plate, and polish and proceed, wherein the depression of substrate further reduces.
Claims (42)
1. polishing pad comprises deformable polishing pad main body and is scattered in wherein magnetical sensitive particles, and wherein when having externally-applied magnetic field, one or more character of this polishing pad are changed.
2. the polishing pad of claim 1, wherein one or more character of reformed this polishing pad are to be selected from one or more following character under the situation of externally-applied magnetic field existing: the storage modulus of this polishing pad, compressibility, resilience percentage, and hardness.
3. the polishing pad of claim 1, wherein under the situation that no externally-applied magnetic field exists, this polishing pad has 100 to 1000MPa storage modulus.
4. the polishing pad of claim 1, wherein under the situation that no externally-applied magnetic field exists, this polishing pad has 2% or higher average compression percentages under the load of 32kPa.
5. the polishing pad of claim 1, wherein under the situation that no externally-applied magnetic field exists, this polishing pad has 25% or higher average resilience percentage after the load that applies 32kPa.
6. the polishing pad of claim 1, wherein under the situation that no externally-applied magnetic field exists, this polishing pad has the sclerometer hardness of 40A to 90D.
7. the polishing pad of claim 1, wherein this deformable polishing pad main body comprises polymer.
8. the polishing pad of claim 7, wherein this polymer is selected from: elastomer, polyurethane, polyolefin, Merlon, polyvinyl alcohol, nylon, natural and synthetic rubber, styrenic polymer, polyaromatic, fluoropolymer polymer, polyimides, cross-linked polyurethane, heat-curable urethane, cross-linked polyolefin, polyethers, polyester, polyacrylate, elastic polyethylene, its copolymer and block copolymer, and composition thereof and blend.
9. the polishing pad of claim 8, wherein this deformable polishing pad main body comprises foamable polymer.
10. the polishing pad of claim 9, wherein this foaming body mainly comprises perforate.
11. the polishing pad of claim 9, wherein this foaming body mainly comprises closed pore.
12. the polishing pad of claim 9, wherein this foaming body comprises the mixture of perforate and closed pore.
13. the polishing pad of claim 1, wherein this magnetical sensitive particles has 5 μ m or littler average grain diameter.
14. the polishing pad of claim 1, wherein this magnetical sensitive particles is an inorganic particulate.
15. the polishing pad of claim 14, wherein this magnetical sensitive particles is selected from: Fe
3O
4, Nd-Fe-B, Ba-Sr ferrite, Ni-Zn-Cu ferrite, SmCo
5, Sm
2Co
17, iron, steel, and composition thereof.
16. the polishing pad of claim 14, wherein this magnetical sensitive particles is the particle through applying.
17. the polishing pad of claim 1, wherein this magnetical sensitive particles is organic filler or metal organic filler.
18. the polishing pad of claim 17, wherein this magnetical sensitive particles is selected from: the V[tetracyanoethylene]
～2, V[Cr (CN)]
～0.9, Cr (tetracyanoethylene)
2, KV[Cr (CN)
6], and C-60 fullerene.
19. the polishing pad of claim 1, wherein this magnetical sensitive particles is uniformly distributed in whole this deformable polishing pad main body.
20. the polishing pad of claim 1, wherein this magnetical sensitive particles is distributed in whole this deformable polishing pad main body in non-homogeneous mode.
21. the polishing pad of claim 1, wherein this magnetical sensitive particles is distributed in whole this deformable polishing pad main body with gradient profile.
22. the polishing pad of claim 1, wherein this magnetical sensitive particles is distributed in the selection area of this pad.
23. the polishing pad of claim 1, it further comprises polished surface.
24. the polishing pad of claim 23, wherein this polished surface is provided by the surface of this deformable polishing pad main body.
25. the polishing pad of claim 23, wherein this polished surface is provided by independent layer.
26. the polishing pad of claim 23, wherein this polished surface comprises magnetical sensitive particles.
27. the polishing pad of claim 26, wherein this magnetical sensitive particles is the particle through applying.
28. the polishing pad of claim 26, wherein this magnetical sensitive particles is organic filler or metal organic filler.
29. the polishing pad of claim 23, the wherein nonmagnetic induction particle of this polished surface.
30. the polishing pad of claim 1, it further comprises the end point determination opening.
31. a polishing system, it comprises:
(a) polishing pad, this polishing pad comprise deformable polishing pad main body and are scattered in wherein magnetical sensitive particles, and wherein when having externally-applied magnetic field, one or more character of this polishing pad are changed, and
(b) the adjustable magnetic field of intensity, this magnetic field is positioned at the position of approaching this polishing pad.
32. the polishing system of claim 31, wherein the intensity in this magnetic field is manually control.
33. the polishing system of claim 31, wherein the intensity in this magnetic field is control automatically.
34. the polishing system of claim 33, wherein the intensity in this magnetic field is adjusted automatically according to the change of polishing condition.
35. the polishing system of claim 33, wherein the intensity in this magnetic field is adjusted automatically according to predefined program.
36. the polishing system of claim 31, wherein one or more character of reformed this polishing pad are to be selected from one or more following character under the situation of externally-applied magnetic field existing: the storage modulus of this polishing pad, compressibility, resilience percentage, and hardness.
37. the method for a polishing substrate, it comprises:
(a) provide polishing pad, this polishing pad comprises deformable polishing pad main body and is scattered in wherein magnetical sensitive particles, and wherein when having externally-applied magnetic field, one or more character of this polishing pad are changed,
(b) with this polishing pad and substrate contacts,
(c) apply magnetic field to this polishing pad,, reach to change one or more character of this polishing pad
(d) move this polishing pad with respect to this substrate, thereby polish this substrate.
38. the method for claim 37, it adjusts the intensity in this magnetic field during further being included in polishing, thereby changes one or more character of this polishing pad.
39. the method for claim 37, wherein the intensity in this magnetic field is adjusted according to the change of polishing condition.
40. the method for claim 38, wherein the intensity in this magnetic field is adjusted according to predefined program.
41. the method for claim 38 is wherein adjusted the intensity in this magnetic field, has reduced the excessive polishing depression in this substrate.
42. the method for claim 37, wherein one or more character of reformed this polishing pad are to be selected from one or more following character under the situation of externally-applied magnetic field existing: the storage modulus of this polishing pad, compressibility, resilience, and hardness.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/158,185 US20060286906A1 (en) | 2005-06-21 | 2005-06-21 | Polishing pad comprising magnetically sensitive particles and method for the use thereof |
| US11/158,185 | 2005-06-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101203355A true CN101203355A (en) | 2008-06-18 |
Family
ID=37441575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800224133A Pending CN101203355A (en) | 2005-06-21 | 2006-05-24 | Polishing pad comprising magnetical sensitive particles and method for the use thereof |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20060286906A1 (en) |
| EP (1) | EP1915234A2 (en) |
| JP (1) | JP2008546551A (en) |
| KR (1) | KR20080020629A (en) |
| CN (1) | CN101203355A (en) |
| IL (1) | IL187704A0 (en) |
| TW (1) | TW200704477A (en) |
| WO (1) | WO2007001700A2 (en) |
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Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2622553A1 (en) * | 2005-09-16 | 2007-03-22 | Pasquale Catalfamo | Abrasive body |
| DE102007015502A1 (en) * | 2007-03-30 | 2008-10-02 | Advanced Micro Devices, Inc., Sunnyvale | CMP system with an eddy current sensor of lower height |
| MX2009013265A (en) | 2007-06-06 | 2010-01-25 | Novus Int Inc | Dietary supplements for promotion of growth, repair, and maintenance of bone and joints. |
| US8221196B2 (en) * | 2007-08-15 | 2012-07-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad and methods of making and using same |
| TWI444248B (en) * | 2007-08-15 | 2014-07-11 | 羅門哈斯電子材料Ｃｍｐ控股公司 | Chemical mechanical polishing method |
| US7458885B1 (en) * | 2007-08-15 | 2008-12-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad and methods of making and using same |
| EP2323808B1 (en) * | 2008-07-18 | 2015-09-30 | 3M Innovative Properties Company | Polishing pad with floating elements and method of making and using the same |
| JP5710353B2 (en) * | 2011-04-15 | 2015-04-30 | 富士紡ホールディングス株式会社 | Polishing pad and manufacturing method thereof |
| EP2982707B1 (en) * | 2012-06-28 | 2019-09-11 | Dow Global Technologies LLC | A composite material method of producing the same, and articles made therefrom |
| KR101632718B1 (en) * | 2013-09-30 | 2016-06-22 | 주식회사 엘지화학 | Poly-urethane mounting pad |
| US20150298284A1 (en) * | 2014-04-21 | 2015-10-22 | Applied Materials, Inc. | Polishing System with Front Side Pressure Control |
| EP3192844B1 (en) * | 2016-01-12 | 2021-02-24 | Eoswiss Engineering Sarl | Method and device for chemical mechanical polishing |
| WO2019139586A1 (en) * | 2018-01-11 | 2019-07-18 | Intel Corporation | Magnetic polishing pad and platen structures for chemical mechanical polishing |
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| JP7264775B2 (en) * | 2019-09-03 | 2023-04-25 | エヌ・ティ・ティ・アドバンステクノロジ株式会社 | Optical connector polishing pad |
| JP7105334B2 (en) * | 2020-03-17 | 2022-07-22 | エスケーシー ソルミックス カンパニー，リミテッド | Polishing pad and method for manufacturing semiconductor device using the same |
| JP2022158419A (en) * | 2021-04-02 | 2022-10-17 | 株式会社荏原製作所 | Polishing pad, polishing device, and polishing method |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US496218A (en) * | 1893-04-25 | Combined rail-joint and tie | ||
| US5196353A (en) * | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US5578238A (en) * | 1992-10-30 | 1996-11-26 | Lord Corporation | Magnetorheological materials utilizing surface-modified particles |
| US6614529B1 (en) * | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (en) * | 1994-02-21 | 2002-04-02 | 株式会社東芝 | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| US5489233A (en) * | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
| JP3313505B2 (en) * | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | Polishing method |
| EP0756917A4 (en) * | 1994-04-22 | 1997-12-17 | Toshiba Kk | Separation type grinding surface plate and grinding apparatus using same |
| US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5964643A (en) * | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| JP3305557B2 (en) * | 1995-04-10 | 2002-07-22 | 大日本印刷株式会社 | Polishing tape, method for producing the same, and coating agent for the polishing tape |
| US5838447A (en) * | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5915915A (en) * | 1996-03-07 | 1999-06-29 | Komag, Incorporated | End effector and method for loading and unloading disks at a processing station |
| JP3471520B2 (en) * | 1996-04-30 | 2003-12-02 | 富士通株式会社 | Method of manufacturing magnetoresistive head and method of manufacturing magnetoresistive head |
| US5872633A (en) * | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| JPH10180611A (en) * | 1996-12-24 | 1998-07-07 | Takahiro Imahashi | Magnetic grinding method and device based on generation of plurality of alternating fields |
| US6033293A (en) * | 1997-10-08 | 2000-03-07 | Lucent Technologies Inc. | Apparatus for performing chemical-mechanical polishing |
| US6083839A (en) * | 1997-12-31 | 2000-07-04 | Intel Corporation | Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control |
| US6602380B1 (en) * | 1998-10-28 | 2003-08-05 | Micron Technology, Inc. | Method and apparatus for releasably attaching a polishing pad to a chemical-mechanical planarization machine |
| US6719615B1 (en) * | 2000-10-10 | 2004-04-13 | Beaver Creek Concepts Inc | Versatile wafer refining |
| US6224474B1 (en) * | 1999-01-06 | 2001-05-01 | Buehler, Ltd. | Magnetic disc system for grinding or polishing specimens |
| US6059638A (en) * | 1999-01-25 | 2000-05-09 | Lucent Technologies Inc. | Magnetic force carrier and ring for a polishing apparatus |
| US6297159B1 (en) * | 1999-07-07 | 2001-10-02 | Advanced Micro Devices, Inc. | Method and apparatus for chemical polishing using field responsive materials |
| US6884153B2 (en) * | 2000-02-17 | 2005-04-26 | Applied Materials, Inc. | Apparatus for electrochemical processing |
| US6979248B2 (en) * | 2002-05-07 | 2005-12-27 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US6436828B1 (en) * | 2000-05-04 | 2002-08-20 | Applied Materials, Inc. | Chemical mechanical polishing using magnetic force |
| US6358118B1 (en) * | 2000-06-30 | 2002-03-19 | Lam Research Corporation | Field controlled polishing apparatus and method |
| US20020016139A1 (en) * | 2000-07-25 | 2002-02-07 | Kazuto Hirokawa | Polishing tool and manufacturing method therefor |
| US6383065B1 (en) * | 2001-01-22 | 2002-05-07 | Cabot Microelectronics Corporation | Catalytic reactive pad for metal CMP |
| US6623331B2 (en) * | 2001-02-16 | 2003-09-23 | Cabot Microelectronics Corporation | Polishing disk with end-point detection port |
| JP2004527905A (en) * | 2001-03-14 | 2004-09-09 | ユニバーシティー オブ マサチューセッツ | Nano manufacturing |
| US7097549B2 (en) * | 2001-12-20 | 2006-08-29 | Ppg Industries Ohio, Inc. | Polishing pad |
| US6776688B2 (en) * | 2002-10-21 | 2004-08-17 | Texas Instruments Incorporated | Real-time polishing pad stiffness-control using magnetically controllable fluid |
| KR100506934B1 (en) * | 2003-01-10 | 2005-08-05 | 삼성전자주식회사 | Polishing apparatus and the polishing method using the same |
| US6935929B2 (en) * | 2003-04-28 | 2005-08-30 | Micron Technology, Inc. | Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
| US6998166B2 (en) * | 2003-06-17 | 2006-02-14 | Cabot Microelectronics Corporation | Polishing pad with oriented pore structure |
| US20050241239A1 (en) * | 2004-04-30 | 2005-11-03 | Chien-Min Sung | Abrasive composite tools having compositional gradients and associated methods |
-
2005
- 2005-06-21 US US11/158,185 patent/US20060286906A1/en not_active Abandoned
-
2006
- 2006-05-24 JP JP2008518179A patent/JP2008546551A/en not_active Withdrawn
- 2006-05-24 CN CNA2006800224133A patent/CN101203355A/en active Pending
- 2006-05-24 KR KR1020077029738A patent/KR20080020629A/en not_active Application Discontinuation
- 2006-05-24 EP EP06760367A patent/EP1915234A2/en not_active Withdrawn
- 2006-05-24 WO PCT/US2006/020194 patent/WO2007001700A2/en active Application Filing
- 2006-06-20 TW TW095122107A patent/TW200704477A/en unknown
-
2007
- 2007-11-27 IL IL187704A patent/IL187704A0/en unknown
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| CN110788743B (en) * | 2019-09-23 | 2021-11-09 | 湖南科技大学 | Magnetic field controllable slow-release magnetic substance thickening fluid flow polishing pad and polishing method |
| CN112608597A (en) * | 2020-12-04 | 2021-04-06 | 四川大学 | High-energy-storage-density polymer composite material and preparation method thereof |
| CN112608597B (en) * | 2020-12-04 | 2022-03-04 | 四川大学 | High-energy-storage-density polymer composite material and preparation method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2007001700A3 (en) | 2007-02-22 |
| TW200704477A (en) | 2007-02-01 |
| EP1915234A2 (en) | 2008-04-30 |
| JP2008546551A (en) | 2008-12-25 |
| WO2007001700A2 (en) | 2007-01-04 |
| KR20080020629A (en) | 2008-03-05 |
| IL187704A0 (en) | 2008-08-07 |
| US20060286906A1 (en) | 2006-12-21 |
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