CN101136329B - 半导体晶圆背面加工方法和衬底背面加工方法 - Google Patents
半导体晶圆背面加工方法和衬底背面加工方法 Download PDFInfo
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- CN101136329B CN101136329B CN2007101427803A CN200710142780A CN101136329B CN 101136329 B CN101136329 B CN 101136329B CN 2007101427803 A CN2007101427803 A CN 2007101427803A CN 200710142780 A CN200710142780 A CN 200710142780A CN 101136329 B CN101136329 B CN 101136329B
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Classifications
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- C—CHEMISTRY; METALLURGY
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Abstract
本发明涉及半导体晶圆背面加工方法,该方法包括在半导体晶圆的正面施用辐射固化型压敏粘着片,该辐射固化型压敏粘着片包括基材膜和在该基材膜的一侧上布置的压敏粘着剂层,所述半导体晶圆的正面具有凹陷和凸出;以辐射固化型压敏粘着片附着于所述半导体的正面的状态研磨所述半导体晶圆的背面;和放射线照射所述压敏粘着片从而使所述压敏粘着剂层固化,然后使所述经过研磨的半导体晶圆的背面经历表面处理;并涉及用于所述半导体晶圆背面加工方法的辐射固化型压敏粘着片。
Description
技术领域
本发明涉及半导体晶圆或衬底的背面加工方法。本发明还涉及用于所述背面加工方法的辐射固化型压敏粘着片。
背景技术
近年来,为了获得甚至更高的速度和进一步的功能进步,其中将一套封装安放在半导体IC芯片上的技术已经被越来越多地采用。由于这样的IC芯片当使用时会遇到热量积聚的问题,要对其赋予散热的功能,例如通过将晶圆背面经历处理,例如金属的汽相淀积或溅射。另外,存在如下情况,其中为了例如除去在研磨过程中在所述晶圆背面产生的微裂纹以从而提高IC芯片自身的强度的目的,将所述晶圆背面经历物理或用化学药品进行的表面处理,或经历用利用等离子体的干法刻蚀的表面处理。还存在如下情况,其中为了清洁所述晶圆背面的目的,进行等离子体处理或CVD处理。另一方面,为了安放用于图象应用的玻璃或安放用于器件(IC芯片)的衬底而进行回流的步骤和在为了固定到引线架上通过晶粒接着(die bonding)将它们安放之后进行热处理的步骤正在被越来越多地实施。
半导体晶圆的生产步骤通常包括背面研磨步骤,其中将在其上已经形成了图案的晶圆的背面用研磨装置,例如背面研磨机研磨至指定厚度。为了例如晶圆保护的目的,这样的研磨通常在将用于晶圆加工的保护片施用到所述晶圆的正面之后进行。作为用于半导体晶圆加工的保护片,可使用包括基材和在其上布置的压敏粘着剂层的压敏粘着片。例如,已经公开了一种压敏粘着膜,其包括透光的支承体和在该支承体上形成的压敏粘着剂层,该压敏粘着剂层的性质是当光照射发 生固化以具有三维网状结构(参见JP-A-60-189938)。
另外,已经公开了一种晶圆研磨的方法,其包括将能量射线固化型压敏粘着片施用到在其上已经形成了电路的晶圆的正面;用能量射线照射所述压敏粘着片以固化所述压敏粘着剂层;和然后以所述压敏粘着片附着于所述晶圆的正面的状态研磨所述晶圆的背面(参见JP-A-11-26406)。
即使当将所述压敏粘着膜加热到如在所述研磨中那样的程度,它也完全不会遇到问题。然而,在所述研磨后的表面处理步骤通常在高温下进行。因此,当使用例如如上所述的压敏粘着膜时,在所述晶圆的电路一面和所述压敏粘着剂层之间的粘附作用增加并且粘合强度不利地增加。因此,当将所述粘着膜最终剥离时,出现剥离失败或晶圆裂纹。即使当将能量射线固化型压敏粘着片,例如紫外线固化型压敏粘着片用于进行表面处理时,在合成所述压敏粘着剂聚合物中使用的聚合引发剂或在所述压敏粘着剂中包含的光聚合引发剂使由周围的热导致的反应加速,这导致在所述压敏粘着剂层中的被固化部分和未被固化部分。这导致如下问题,即使当仅在所述压敏粘着片的剥离之前进行紫外照射处理时,也会发生剥离失败或粘着剂残留,从而显著降低成品率。
发明内容
本发明的目的是提供半导体晶圆背面加工的方法,该方法不会导致晶圆裂纹、粘着剂残留到所述晶圆上等,并能保证高的成品率。本发明的另一个目的是提供衬底背面加工的方法,该方法不会导致衬底裂纹、粘着剂残留到所述衬底上等,并能保证高的成品率。本发明的又一个目的是提供用于上述背面加工方法的辐射固化型压敏粘着片。
为了克服上述问题,本发明的发明人已经进行了深入的研究。结果本发明的发明人发现那些目的可用如下背面加工方法完成。因此完 成了本发明。
发明详述
即,本发明涉及:
半导体晶圆背面加工方法,该方法包括:
在半导体晶圆的正面施用辐射固化型压敏粘着片,该辐射固化型压敏粘着片包括基材膜和在该基材膜的一侧上布置的压敏粘着剂层,所述半导体晶圆的正面具有凹陷和凸出;
以将所述辐射固化型压敏粘着片附着于所述半导体的正面的状态研磨所述半导体晶圆的背面;和
放射线照射所述压敏粘着片从而使所述压敏粘着剂层固化,然后使所述经过研磨的半导体晶圆的背面经历表面处理。
通过这样在将所述晶圆的背面经历表面处理之前将采用辐射固化型压敏粘着片的半导体晶圆的背面进行研磨和将所述压敏粘着片放射线照射以使所述压敏粘着剂层固化,可有效抑制所述压敏粘着剂层增加粘合强度,即使当将其暴露于在随后表面处理步骤中的高温条件时。因此,当将所述压敏粘着片最终剥离时,可防止例如剥离失败、晶圆破坏和粘着剂残留到所述晶圆上的麻烦,并且可容易地除去所述压敏粘着片。
另外,本发明涉及:
衬底背面加工方法,该方法包括:
在衬底的正面施用辐射固化型压敏粘着片,该辐射固化型压敏粘着片包括基材膜和在该基材膜的一侧上布置的压敏粘着剂层;和
放射线照射所述压敏粘着片从而使所述压敏粘着剂层固化,然后使所述衬底的背面经历热处理。
通过这样在将所述晶圆的背面经历热处理之前照射所述压敏粘着片从而使所述压敏粘着剂层固化,可有效抑制所述压敏粘着剂层增加 粘合强度,即使当将其暴露于在随后热处理步骤中的高温条件时。因此,当将所述压敏粘着片最终剥离时,可防止例如剥离失败、晶圆破坏和粘着剂残留到所述晶圆上的麻烦,并且可容易地除去所述压敏粘着片。
本发明还进一步涉及用于上述背面加工方法的辐射固化型压敏粘着片,其包含基材膜和压敏压敏粘着剂层,所述压敏粘着剂层含有辐射固化型丙烯酸类聚合物作为组分,该辐射固化型丙烯酸类聚合物在其分子内含有碳碳双键。
优选所述辐射固化型压敏粘着片的压敏粘着剂层包含辐射固化型低聚物作为其组分。辐射固化型低聚物的加入向所述压敏粘着剂赋予塑性流动性,并因此该压敏粘着片可容易地施用到晶圆等上。当用放射线照射时,所述低聚物交联以形成具有低粘合性的物质。因此,该压敏粘着片可容易地从所述晶圆等上剥离。
所述辐射固化型压敏粘着片优选具有放射线照射前测得的粘合强度为0.8N/20mm或更高以及放射线照射后测得的粘合强度低于0.8N/20mm。更优选地,放射线照射前测得的其粘合强度为1.0N/20mm或更高以及放射线照射后测得的其粘合强度为0.7N/20mm或更低。在其中放射线照射前测得的其粘合强度为低于0.8N/20mm的情况下,不能获得对晶圆足够的粘合,并且因此在晶圆背面研磨的过程中,水倾向于渗透进入间隙。因此,存在所述晶圆的有图案侧可能被污染的可能性,并且在一些情况下,晶圆研磨可能变得不稳定从而导致晶圆破坏。另一方面,在其中放射线照射后测得的其粘合强度为0.8N/20mm或更高的情况下,从具有厚度为约100μm的晶圆等上剥离所述压敏粘着片的是困难的,并且存在可能发生例如剥离失败和所述晶圆破坏的麻烦的可能性。所述粘合强度通过将在实施例中详细描述的方法进行测定。
另外,优选所述辐射固化型压敏粘着片的压敏粘着剂层具有在放射线照射前的25℃时的弹性模数为5到60,000kPa,并且通过将所述粘着剂层的放射线照射前测得的弹性模数除以所述粘着剂层的放射线照射后测得的弹性模数所得的值(X)为8×10-5到0.35。更优选地,所述压敏粘着剂层具有在放射线照射前的25℃时的弹性模数为10到40,000kPa,并且通过将所述粘着剂层的放射线照射前测得的弹性模数除以所述粘着剂层的放射线照射后测得的弹性模数所得的值(X)为1×10-4到0.1。在其中所述压敏粘着剂层具有在放射线照射前的25℃时的弹性模数为低于5kPa时,该压敏粘着剂层太软了以致于存在所述压敏粘着片可能具有降低的形状稳定性和在长期储存过程中或在加载下变形的高度可能性。另外,该压敏粘着剂可能被挤出从而弄脏所述晶圆或衬底。另一方面,在其中所述压敏粘着剂层具有在放射线照射前的25℃时的弹性模数为高于60,000kPa时,该压敏粘着剂层具有差的对所述晶圆正面的凹陷和凸出的顺应性,并因此在晶圆背面研磨的过程中,水倾向于渗透进入间隙。因此存在所述晶圆的有图案侧可能被污染或者可能发生晶圆破坏的可能性。在其中X小于8×10-5的情况下,该压敏粘着剂层是脆的并且倾向于留下粘着剂残余物。在其中X大于0.35的情况下,该压敏粘着剂层较不易于经历固化收缩并倾向于导致剥离失败。所述弹性模数通过将在实施例中详细描述的方法进行测定。
本发明的辐射固化型压敏粘着片包括基材膜和用于施用到晶圆或衬底的辐射固化型压敏粘着剂层。由例如树脂、非辐射固化型的压敏粘着剂层或与上述辐射固化型压敏粘着剂层的组分不同的压敏粘着剂层组成的中间层可布置在所述基材膜和所述压敏粘着剂层之间。所述辐射固化型压敏粘着片可以是标签形式或可以被卷成卷筒。根据需要,可将隔离片布置在所述压敏粘着剂层上。
作为构成所述辐射固化型压敏粘着剂层的压敏粘着剂,可使用常规的压敏粘着剂而没有特别限制。所述压敏粘着剂可通过将基础聚合物组合物、可辐射固化单体成分或低聚物成分的部分,等适当组合而 制备。作为所述辐射固化型压敏粘着剂,可使用当用放射线照射时粘合强度降低的压敏粘着剂。所述放射线的例子包括X-射线、电子束和紫外线。然而,从易于操作的观点出发,优选使用紫外线。
作为所述压敏粘着剂,可使用选自例如丙烯酸类压敏粘着剂、有机硅压敏粘着剂和橡胶基压敏粘着剂的适当的压敏粘着剂。可使用一种压敏粘着剂或者两种或更多种压敏粘着剂的混合物。从对半导体晶圆或衬底的粘合性、易于调节粘合强度等的观点出发,优选使用包含丙烯酸类聚合物作为基础聚合物的丙烯酸类压敏粘着剂。
所述丙烯酸类聚合物的例子包括得自一种或多种选自(甲基)丙烯酸烷基酯(例如,其中的烷基具有1至30个,尤其是4至18个碳原子的直链或支链烷基酯,例如甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯和二十烷基酯)和(甲基)丙烯酸环烷基酯(例如,环戊酯和环己酯)的单体成分的丙烯酸类聚合物。术语“(甲基)丙烯酸酯”指丙烯酸酯和/或甲基丙烯酸酯。在本发明中术语“(甲基)”在所有情况下具有相同的含义。
为了改进粘合性、内聚力、耐热性等的目的,所述丙烯酸类聚合物可任选包含衍生自一种或多种可与那些(甲基)丙烯酸烷基酯或环烷基酯共聚的单体成分的单元。
这些单体成分的例子包括含羧基单体,例如丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、衣康酸、马来酸、富马酸和巴豆酸;酸酐单体,例如马来酸酐和衣康酸酐;含羟基单体,例如(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸6-羟基己酯、(甲基)丙烯酸8-羟基辛酯、(甲基)丙烯酸10-羟基癸酯、(甲基)丙烯酸12-羟基月桂基酯、和(甲基) 丙烯酸(4-羟甲基环己基)甲酯;含磺基单体,例如苯乙烯磺酸、芳基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺基丙酯和(甲基)丙烯酰氧基萘磺酸;含磷酸酯基团单体,例如丙烯酰基磷酸2-羟基乙酯;和丙烯酰胺和丙烯腈。这些可共聚单体成分可单独使用或以其两种或更多种的组合使用。
这些可共聚单体的用量基于所有单体成分优选up by weight或更低,更优选5至15重量%。当在该范围内的量使用所述可共聚单体时,可倾向于获得在粘合性、内聚力等中更好的平衡。
在制备所述丙烯酸类聚合物中,还可任选使用多官能单体用于交联该聚合物。所述多官能单体的例子包括1,4-丁二醇二(甲基)丙烯酸酯、己二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯和聚氨酯(甲基)丙烯酸酯。这些多官能单体也可单独使用或以其两种或更多种的组合使用。从压敏粘着剂性能等的观点出发,所述多官能单体的用量优选为基于所有的单体成分的30重量%或更低,更优选0.5至20重量%。
所述丙烯酸类聚合物可具有交联结构。交联结构可例如通过在交联剂的存在下将含有所述多官能单体的单体混合物聚合而形成。通过采用具有交联结构的丙烯酸类聚合物,所述压敏粘着剂层自身的形状保持性被改进,并且因此可防止所述压敏粘着片变形。因此,该压敏粘着片可保持平坦状态。
所述丙烯酸类聚合物可通过将如上列举的单体中的一种或将两种或更多种选自其中的单体的混合物进行聚合而获得。所述聚合可通过 溶液聚合、乳液聚合、本体聚合、悬浮聚合等中的任一种进行。从防止污染半导体晶圆等的观点出发,优选在所述压敏粘着剂层中的低分子量基体的含量是低的。从这个观点出发,所述丙烯酸类聚合物的数均分子量优选为200,000或更高,更优选约200,000至3,000,000,尤其优选约250,000至1,500,000。
所用的辐射固化型压敏粘着剂优选为添加型辐射固化型压敏粘着剂,其包含普通的压敏粘着剂和并入到其中的辐射固化型单体成分或低聚物成分;或固有型辐射固化型压敏粘着剂,其包含基础聚合物,该基础聚合物在所述聚合物侧链、主链和主链末端的任何位置中具有碳碳双键。优选所述固有型辐射固化型压敏粘着剂,因为作为低分子量成分的低聚物成分等不必须包含在其中,或者不以大量包含,并且因此该压敏粘着剂不经历随着时间推移的低聚物成分等的迁移,并且可形成具有稳定层结构的压敏粘着剂层。
作为具有碳碳双键的基础聚合物,可使用具有碳碳双键和具有压敏粘着剂性能的基础聚合物,而没有特别限制。优选作为这样的基础聚合物的是具有丙烯酸类聚合物作为基础骨架的基础聚合物。所述基础丙烯酸类聚合物骨架的例子包括如上列举作为例子的丙烯酸类聚合物。
用于将碳碳双键引入到任何上述丙烯酸类聚合物中的方法没有特别限制,并可采用多种方法。然而,将碳碳双键引入到聚合物侧链中在分子设计中是容易的。其例子包括如下方法:其中将具有官能团的单体预先与丙烯酸类聚合物进行共聚,和之后将具有可与所述官能团反应的官能团和还具有碳碳双键的化合物与所述聚合物缩合或加成反应,同时保持所述碳碳双键的可辐射固化性。
这些官能团的组合的例子包括羧基和环氧的组合、羧基和氮丙啶基(aziridyl)的组合、和羟基和异氰酸酯的组合。从易于进行下述反 应的观点出发,这些官能团组合优选羟基和异氰酸酯的组合。只要使用可产生具有碳碳双键的丙烯酸类聚合物的这样的官能团组合,每个官能团可被所述丙烯酸类聚合物和所述化合物中的任一种所拥有。然而,在那种优选的组合中,优选所述丙烯酸类聚合物具有羟基和所述化合物具有异氰酸酯基团。
在这种情况下,具有碳碳双键的异氰酸酯化合物的例子包括甲基丙烯酰基异氰酸酯、异氰酸2-甲基丙烯酰基氧基乙酯和异氰酸间异丙烯基-α,α-二甲基苄酯。作为所述丙烯酸类聚合物,可使用通过将任何上述含羟基单体和醚化合物,例如2-羟基乙基·乙烯基醚、4-羟基丁基·乙烯基醚和二甘醇单乙烯基醚进行共聚而获得的丙烯酸类聚合物。
优选将辐射固化型低聚物加入到所述辐射固化型压敏粘着剂中,只要所述粘着剂的性质没有被消弱。所述辐射固化型低聚物的例子包括多种低聚物,所述低聚物包括聚氨酯、聚醚、聚酯、聚碳酸酯和聚丁二烯的低聚物。具有(重均)分子量为约100至30,000的这样的低聚物是合适的。所述辐射固化型低聚物的加入量优选为基于每100重量份的组成所述压敏粘着剂的基础聚合物,例如丙烯酸类聚合物的30重量份或更低,更优选10重量份或更低。
在其中所述粘着剂用紫外线等固化的情况下,将光聚合引发剂并入到所述辐射固化型压敏粘着剂中。所述光聚合引发剂的例子包括α-酮醇化合物,例如4-(2-羟基乙氧基)苯基·2-羟基2-丙基酮、α-羟基-α,α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、和1-羟基环己基·苯基酮;苯乙酮类化合物,例如甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、和2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代丙烷-1;苯偶姻醚化合物,例如苯偶姻***、苯偶姻异丙醚、和茴香偶姻甲醚;缩酮化合物,例如苄基二甲基缩酮;芳香族磺酰氯化合物,例如2-萘磺酰氯;旋光活性的肟化合物,例如1-苯基-1,1-丙烷二酮-2-(邻乙氧基羰基)肟;二苯甲酮类化合物,例如二苯甲酮、苯甲酰基苯甲酸、和3,3’- 二甲基-4-甲氧基二苯甲酮;噻吨酮类化合物,例如噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、异丙基噻吨酮、2,4-二氯噻吨酮、2,4-二乙基噻吨酮、和2,4-二异丙基噻吨酮;樟脑醌;卤代酮;酰基氧化膦;和酰基膦酸酯。所述光聚合引发剂的加入量优选为基于每100重量份的组成所述压敏粘着剂的基础聚合物,例如丙烯酸类聚合物的约1至10重量份,更优选约3至5重量份。
可将常规的交联剂,例如环氧交联剂、氮丙啶交联剂、或异氰酸酯交联剂加入到所述辐射固化型压敏粘着剂中。
可将当加热时膨胀的成分,例如加热膨胀型细颗粒加入到所述压敏粘着剂层中。所述细颗粒的热膨胀减少了所述粘着面积,从而促进了所述压敏粘着片的剥离。
所述加热膨胀型细颗粒优选具有平均粒径为约1至25μm。其平均粒径更优选为5至15μm,尤其约10μm。作为所述加热膨胀型细颗粒,可使用当加热时膨胀的材料,而没有特别限制。然而,可使用通过包封适当的气化/膨胀成分,例如丁烷、丙烷或戊烷而获得的加热膨胀型微胶囊,所述的包封采用偏二氯乙烯、丙烯腈等通过原位聚合方法或其它方法得到的共聚物的壳壁。这样的加热膨胀型微胶囊具有如下优点,例如,它们具有优异的在所述压敏粘着剂中的分散性和与所述压敏粘着剂的可混合性。所述加热膨胀型微胶囊的市售产品的例子包括Microsphere(由Matsumoto Yushi-Seiyaku Co.,Ltd.生产)。
所述加热膨胀型细颗粒(加热膨胀型微球体)并入到所述压敏粘着剂中的量可根据所述压敏粘着剂层的种类适当确定,以使得所述压敏粘着剂层的粘合强度可被降低。通常,其量为约基于每100重量份的所述基础聚合物的约1至100重量份,优选5至50重量份,更优选10至40重量份。
除了上述成分外,还可任选将多种已知的添加剂并入到所述压敏粘着剂中。所述添加剂的例子包括增粘剂、增塑剂、颜料、填充剂和抗老化剂。
所述压敏粘着剂层由至少一层组成,并可由两层或更多层组成。在采用两层或更多层压敏粘着剂层的情况下,它们可以是非辐射固化型压敏粘着剂层和辐射固化型压敏粘着剂层的组合。然而待施用于晶圆或衬底的最外层压敏粘着剂层必须是辐射固化型压敏粘着剂层。
所述压敏粘着剂层的厚度可被适当确定,只要固定和保护晶圆或其它被粘物的性能不会被消弱。然而,其通常为1至100μm,优选2至60μm。
所述基材膜的材料可以是多种材料中的任一种,而没有特别限制。然而,优选在耐水性和耐热性方面优异的材料。尤其优选的是在加热处理中几乎不收缩并且不会翘曲的合成树脂膜。
所述基材膜的材料的例子包括聚烯烃,例如低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、丙烯无规共聚物、丙烯嵌段共聚物、丙烯均聚物、聚丁烯、和聚甲基戊烯;乙烯/乙酸乙烯酯共聚物,离聚物树脂,乙烯/(甲基)丙烯酸共聚物,乙烯/(甲基)丙烯酸酯(无规或交替)共聚物,乙烯/丁烯共聚物,乙烯/己烯共聚物,聚氨酯,聚酯,例如聚(对苯二甲酸乙二醇酯)、聚(对苯二甲酸丁二醇酯)和聚(萘二甲酸乙二醇酯),聚碳酸酯,聚酰胺,聚酰亚胺,聚苯乙烯,聚醚醚酮,聚(氯乙烯),聚(偏二氯乙烯),氟树脂,丙烯酸树脂,纤维素树脂和通过交联这些聚合物而获得的聚合物。根据需要可使用两种或更多种这些材料的混合物。另外,可以使用热固性树脂、金属箔、纸等。
所述聚烯烃,例如上面列举的聚乙烯,当用电子束照射时增加交 联密度,并因而其具有增加的耐热性并抑制了热收缩。因此,所述聚烯烃适用于其中在所述表面处理或热处理中的最高温度超过100℃的情况。
这样的基材膜可通过已知的膜形成方法获得。例如,可使用湿法流延法、膨胀挤出法、T-模头挤出法,等。所述基材膜根据需要可以未拉伸状态使用,或者可以是已经被单轴或双轴拉伸的基材膜。所述基材膜的表面可以任选经历普通的物理或化学处理,例如消光处理、电晕放电处理、底漆处理或交联处理(化学交联(硅烷))。
在生产这些基材膜的每一个中,可适当选择和使用相同种类或不同种类的材料,并且可根据需要使用两种或更多种材料的混合物。所述基材膜可由单独的层或者由两层或更多层组成。在其中所述压敏粘着剂层待被固化时,其中所述压敏粘着片粘附于晶圆或衬底,使用至少部分透过放射线,例如X-射线、紫外线或电子束的基材膜。
所述基材膜的厚度(在其中所述膜由两层或更多层组成的情况下为总厚度)可以是约10至300μm,并优选为约50至200μm。
为了形成中间层,可使用具有能使所述中间层吸收在晶圆表面上存在的凹陷和凸起的柔软性的材料。其例子包括无机粘弹性材料和热塑性树脂。从用于广泛应用的分子设计的适合性和生产性的观点出发,优选有机粘弹性材料。具体而言,丙烯酸类有机粘弹性材料是优选的,因为所述压敏粘着剂层具有令人满意的对这些粘弹性材料的粘合性(锚定性),并且其弹性模数的调节是容易的。
所述丙烯酸类有机粘弹性材料的例子包括含有衍生自一种或多种丙烯酸或甲基丙烯酸的烷基酯的单元作为主要成分的丙烯酸类聚合物。其明确的例子包括分别得自(甲基)丙烯酸烷基酯的丙烯酸类聚合物,在所述(甲基)丙烯酸烷基酯中,所述烷基具有4至12个碳原子, 所述(甲基)丙烯酸烷基酯例如为(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异壬酯、(甲基)丙烯酸异辛酯和(甲基)丙烯酸月桂基酯。
除了这些单体成分外,为了调节所述弹性模数和凝胶含量或为了其它目的,可使用可共聚单体。优选所述可共聚单体的量小于所有单体成分的30重量%。所述可共聚单体的明确的例子包括其中所述烷基各自具有1至3个碳原子的(甲基)丙烯酸的烷基酯,例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯和(甲基)丙烯酸异丙酯,其中所述烷基各自具有13至18个碳原子的(甲基)丙烯酸的烷基酯,例如(甲基)丙烯酸十三烷基酯和(甲基)丙烯酸硬脂基酯,官能单体,例如衣康酸、马来酸酐、巴豆酸、马来酸、富马酸、(甲基)丙烯酸羟基烷基酯、丙三醇二(甲基)丙烯酸酯,(甲基)丙烯酸缩水甘油基酯,(甲基)丙烯酸甲基缩水甘油基酯、(甲基)丙烯酸氨基乙酯、和异氰酸2-(甲基)丙烯酰氧基乙酯。多官能单体,例如三乙二醇二(甲基)丙烯酸酯、乙二醇二(甲基)丙烯酸酯、和三甲氧基丙烷三(甲基)丙烯酸酯,乙酸乙烯酯,苯乙烯,(甲基)丙烯腈,N-乙烯基吡咯烷酮,(甲基)丙烯酰基吗啉,环己基马来酰亚胺,异丙基马来酰亚胺和(甲基)丙烯酰胺。
所述丙烯酸类聚合物可通过将如上列举的单体中的一种或其两种或更多种的混合物进行聚合而获得。所述聚合可通过溶液聚合、乳液聚合、本体聚合、悬浮聚合等中的任一种进行。
所述有机粘弹性材料的数均分子量没有特别限制,只要该材料具有如上所述的性质。然而,其优选为10,000至2,000,000。在其中其数均分子量低于10,000的情况下,该粘弹性材料在高温下易于流动,并且因此所述片倾向于具有差的形状保持性。另一方面,在其中其数均分子量超过2,000,000的情况下,所述压敏粘着片倾向于在应用中具有差的对凹陷和突出的顺应性。
所述有机粘弹性材料可单独用作用于形成所述中间层的材料,并且还可能使用包含如上所述的丙烯酸类聚合物的丙烯酸类压敏粘着剂作为有机粘弹性材料。根据如在上述压敏粘着剂的情况下的需要,可将适当的添加剂,例如交联剂、增塑剂、填充剂、颜料和增粘剂并入到该压敏粘着剂中。
热塑性树脂也可用作用于形成所述中间层的材料。所述热塑性树脂优选为基于熔点为70℃或更低的(根据差热分析法)热塑性树脂。优选地,所述热塑性树脂还具有MFR为5g/min或更高(根据JISK6730)。其例子包括聚乙烯(PE);聚丁烯;聚烯烃共聚物,例如乙烯共聚物和改性的聚烯烃聚合物,例如,乙烯/丙烯酸乙酯共聚物(EEA),乙烯/丙烯酸酯/马来酸酐共聚物(EEAMAH),乙烯/甲基丙烯酸缩水甘油基酯共聚物(EGMA),乙烯/甲基丙烯酸共聚物(EMAA),乙烯/乙酸乙烯酯共聚物(EVA),和离聚物树脂(IONO);热塑性弹性体,例如基于丁二烯的弹性体(TPE-B),酯弹性体(TPE-E),和苯乙烯/异戊二烯弹性体(TPE-SIS);热塑性聚酯,聚酰胺树脂,例如聚酰胺-12型共聚物;聚氨酯;聚苯乙烯树脂;玻璃纸;聚丙烯腈;丙烯酸树脂,例如甲基丙烯酸甲酯或(甲基)丙烯酸烷基酯的共聚物;和聚(氯乙烯)树脂,例如氯乙烯/乙酸乙烯酯共聚物。
所述中间层可包括其它成分(添加剂)。所述成分的例子包括增粘剂、增塑剂、软化剂、填充剂和抗氧化剂。所述中间层可通过加入如上所述的辐射反应性低聚物和引发剂而被制成辐射固化型的。所述中间层可由一层或者相同或不同种类的两层或更多层组成。
所述中间层的厚度可根据固定和保护晶圆等的性能、所述基材膜的表面不规则性、和所述压敏粘着剂层的种类和厚度而适当确定。然而,其通常为约5至600μm,优选约10至550μm。
可任选布置隔离片。构成所述隔离片的材料的例子包括纸和合成 树脂的膜,所述合成树脂例如聚乙烯、聚丙烯和聚(对苯二甲酸乙二醇酯)。所述隔离片的表面根据需要可以已经经历防粘处理,例如有机硅处理、长链烷基处理或含氟化合物处理,以具有与所述压敏粘着剂层增强的防粘性。所述隔离物的厚度通常为约10至200μm,优选约25至100μm。
用于制备所述辐射固化型压敏粘着片的方法没有特别限制。例如,所述压敏粘着片可通过其中将压敏粘着剂施用到基材膜上的方法制备;或者包括将压敏粘着剂施用到隔离片上和然后将其层压到基材膜上的方法。在其中所述压敏粘着片包括中间层的情况下,制备方法的例子包括:其中将中间层和压敏粘着剂层以这个顺序通过涂覆流体的施用形成在基材膜上的方法;包括将中间层通过涂覆流体的施用形成在基材膜上,将压敏粘着剂施用到隔离片上,和然后层压它们的方法;和包括将压敏粘着剂层和中间层以这个顺序施用到隔离片上和然后将所得到的多层结构层压到基材膜上的方法。用于施用用于中间层形成的组合物和压敏粘着剂组合物的技术的例子包括辊涂、筛网涂覆和凹版涂覆。所述辐射固化型压敏粘着片可根据其应用具有任何形状。例如,优选使用已经被预先切割成与晶圆等相同形状的压敏粘着片。
在其中将所述辐射固化型压敏粘着片被卷成卷筒的情况下,通过在所述基材膜的另一面(在卷绕中,在这一面上与所述压敏粘着剂层形成接触)上形成防粘层可达到容易解卷的目的而不用隔离片。所述防粘层可以已经经历防粘处理,例如有机硅处理、长链烷基处理或含氟化合物处理。
在本发明的半导体晶圆背面加工的方法中,首先进行将包含基材膜和在其一面上形成的压敏粘着剂层的辐射固化型压敏粘着片施用到具有凹陷和凸出的半导体晶圆正面的步骤。该施用步骤以通常的方式进行。尽管待使用的辐射固化型压敏粘着片没有特别限制,但优选使用如上所述的压敏粘着片。所述压敏粘着片根据在所述晶圆正面上的 电路的凹陷和凸出而塑性变形,因为它具有在放射线照射前的弹性,并且所述压敏粘着剂层变形,同时顺应于所述电路的凹陷和凸出从而缓冲了所述凹陷和凸出。
例如,以如下方式进行所述压敏粘着片向半导体晶圆的有图案侧的施用。将所述半导体晶圆放置在桌子上,使得所述晶圆的正面,即具有凹陷和凸出的那面向上。将所述压敏粘着片的压敏粘着剂层叠置于该晶圆上并向其施用,同时将所述压敏粘着片用压制装置,例如压力辊压在所述晶圆上。还可以使用其中在可加压的容器(例如高压釜)中,将所述压敏粘着片叠置于以如上所述安排的半导体晶圆上,和将所述容器的内部加压从而将所述压敏粘着片施用到所述晶圆上的方法。在该方法中,所述压敏粘着片可被施用,同时将其用压制装置压制。另外,可以如上所述的同样方式在真空室中施用所述压敏粘着片。施用的方法不应被解释为限于这些,并且可在施用过程中将所述压敏粘着片加热至约30至150℃。
所述半导体晶圆的正面通常具有约10至60μm的凹陷和凸出的电路图案,厚的聚酰亚胺(5至20μm)作为用于所述晶圆正面的保护膜,缺陷指示标记(5至100μm)用于识别缺陷芯片,和用于凸块连接的金***焊盘(10至300μm)或焊料凸起(50至300μm)作为电线连接的替代物。
随后,进行以压敏粘着片附着于半导体晶圆的正面的状态研磨半导体晶圆的背面的步骤。该研磨步骤可以常规方式进行。将所述半导体晶圆研磨直至其具有需要的厚度。
然后将所述压敏粘着片用放射线照射以固化所述压敏粘着剂层。当经研磨后将所述压敏粘着剂层以该状态用放射线辐射时,所述压敏粘着剂层以缓冲在所述晶圆正面的电路凹陷和凸起的状态中固化。尽管所述放射线的种类和照射剂量没有特别限制,但优选所述压敏粘着 剂层在固化后具有如上所述范围的性质。通常,在使用紫外线的情况下的照射剂量为约50至2,000mJ/cm2,和在使用电子束的情况下的照射剂量为约0.1至1,000kGy。
在所述压敏粘着剂层被固化后,将已经被研磨的晶圆背面经历表面处理,其中所述压敏粘着片粘附于所述晶圆正面。所述表面处理可以常规方式进行。所述表面处理的例子包括金属的汽相淀积、溅射、CVD、等离子体处理、干法刻蚀和金属化。
由于在所述晶圆背面的表面处理以如下状态进行,所述状态为被固化的压敏粘着剂层处于被坚固地粘附于和固定于所述晶圆正面的状态中,所述压敏粘着带不能从所述晶圆正面分离,即使在所述表面处理在高温条件下进行时。因此,所述晶圆正面可在高温条件下的表面处理过程中完好地被保护。另外,由于所述压敏粘着剂层在所述表面处理过程中既不塑性变形也不增加粘合强度,所述压敏粘着带可在所述表面处理后易于从所述晶圆正面剥离而不损坏或污染所述晶圆。因此,根据本发明的半导体晶圆背面加工方法,既不出现晶圆裂纹也不出现粘着剂残留在所述晶圆上,并且可保证高的成品率。
另一方面,在本发明的衬底背面加工方法中,首先进行将包含基材膜和在其一面上形成的压敏粘着剂层的辐射固化型压敏粘着片施用到衬底正面的步骤。该施用步骤以常规方式进行。所述衬底的例子包括玻璃和器件(例如IC芯片)。尽管待使用的辐射固化型压敏粘着片没有特别限制,但优选使用如上所述的压敏粘着片。
随后,将所述压敏粘着片用放射线照射从而以如上所述的方式固化所述压敏粘着剂层。
之后,将所述衬底的背面经历热处理,其中所述压敏粘着片粘附于所述衬底正面。在其中所述衬底是玻璃的情况下,例如其中将器件 或PKG的电极部分连接的回流加工,是相应于热处理的步骤。在所述衬底是IC芯片的情况下,例如焊接回流加工,是相应于热处理的步骤。
由于在所述衬底背面的热处理在这样的状态下进行,所述状态为固化的压敏粘着剂层处于被坚固地粘附于和固定于所述衬底正面的状态,所述压敏粘着带不会从所述衬底正面分离,即使在高温条件下进行热处理时。因此,所述衬底正面可在处于高温条件下进行的热处理过程中被完好地保护。另外,由于所述压敏粘着剂层在所述热处理过程中既不塑性变形也不降低粘合强度,因此所述压敏粘着带可在所述热处理后易于从所述衬底上剥离而不会损坏或污染所述衬底。因此,根据所述衬底背面加工方法,既不会出现衬底裂纹也不会出现在所述衬底上有粘着剂残留,并且可保证高的成品率。
实施例
下文中将参照实施例详细说明本发明。然而,本方面不应被解释为限制于如下实施例。
压敏粘着剂的制备
(辐射固化型压敏粘着剂A1)
将80重量份丙烯酸丁酯、60重量份丙烯酸乙酯和15重量份丙烯酸2-羟基乙酯在乙酸乙酯中共聚以获得具有重均分子量为1,300,000的丙烯酸类聚合物。向100重量份的该丙烯酸类聚合物的溶液(固含量,25重量%)中加入8.4重量份异氰酸酯甲基丙烯酰氧基乙酯。将得到的混合物反应以获得辐射固化型压敏粘着剂A1。
(辐射固化型压敏粘着剂A2)
将50重量份丙烯酸丁酯、20重量份甲基丙烯酸甲酯和30重量份丙烯酸2-羟基乙酯在乙酸乙酯中共聚以获得具有重均分子量为900,000的丙烯酸类聚合物。向100重量份的该丙烯酸类聚合物的溶液(固含量,25重量%)中加入7.0重量份异氰酸酯甲基丙烯酰氧基乙酯。将得 到的混合物反应以获得辐射固化型压敏粘着剂A2。
(辐射固化型压敏粘着剂A3)
将90重量份丙烯酸丁酯、7重量份丙烯酸2-乙基己酯和5重量份丙烯酸2-羟基乙酯在乙酸乙酯中共聚以获得具有重均分子量为1,050,000的丙烯酸类聚合物。向100重量份的该丙烯酸类聚合物的溶液(固含量,25重量%)中加入3.0重量份异氰酸酯甲基丙烯酰氧基乙酯。将得到的混合物反应以获得辐射固化型压敏粘着剂A3。
(辐射固化型压敏粘着剂A4)
将50重量份丙烯酸丁酯、90重量份丙烯酸乙酯、7重量份丙烯酸2-乙基己酯和5重量份丙烯酸2-羟基乙酯在乙酸乙酯中共聚以获得具有重均分子量为1,050,000的丙烯酸类聚合物。向100重量份的该丙烯酸类聚合物的溶液(固含量,25重量%)中加入3.0重量份异氰酸酯甲基丙烯酰氧基乙酯。将得到的混合物反应以获得辐射固化型压敏粘着剂A4。
(辐射固化型压敏粘着剂A5)
将50重量份丙烯酸丁酯、50重量份丙烯酸2-乙基己酯和10重量份丙烯酸2-羟基乙酯在乙酸乙酯中共聚以获得具有重均分子量为1,050,000的丙烯酸类聚合物。该丙烯酸类聚合物的溶液(固含量,25重量%)被用作辐射固化型压敏粘着剂A5。
实施例1
将辐射固化型压敏粘着剂A1(100重量份)与2重量份苯乙酮型光聚合引发剂(Irgacure 184,由Ciba Geigy Ltd.制造)和1重量份多官能异氰酸酯化合物(Coronate L,由Nippon Polyurethane Co.,Ltd.制造)混合以制备辐射固化型压敏粘着剂组合物B1。将该组合物B1施用到经EB处理的聚乙烯膜(厚度,100μm)上,施用的量导致干燥厚度为20μm。将施用的组合物在120℃下干燥1分钟以获得辐射固化型压敏 粘着片C1。
将所述辐射固化型压敏粘着片C1用5-kg橡胶辊施用到半导体晶圆(电路平面间隙,30μm;8英寸;厚度,725μm)的正面。将该晶圆的背面用晶圆研磨机(DFG840,由Disco Corp.制造)研磨至晶圆厚度为170μm。利用装备有高压汞灯(20mW/cm2)的UM-810(由NittoSeiki Inc.制造),将所述辐射固化型压敏粘着片C1用紫外线在照射距离为10cm和光的积分量为100mJ/cm2的条件下进行照射。之后将所述晶圆背面利用RIE Series(由Advanced Plasma System生产)通过等离子体处理进行清洁,条件为CF4气体/O2的混合比例为10/90,输出为2,000W,和处理时间为5分钟。在该处理中,所述晶圆背面的最大温度为150℃。之后,将所述压敏粘着片用由Nitto Seiki Inc.制造的HR-8500-II从所述晶圆上剥离。该剥离试验的结果示于表1中。
实施例2
以如实施例1相同的方式制备辐射固化型压敏粘着剂组合物B2和由此获得的辐射固化型压敏粘着片C2,除了使用辐射固化型压敏粘着剂A2代替辐射固化型压敏粘着剂A1。以如实施例1相同的方式进行晶圆背面研磨和背面处理,除了使用辐射固化型压敏粘着片C2代替辐射固化型压敏粘着片C1。之后,将所述压敏粘着片用由Nitto Seiki Inc.制造的HR-8500-II从所述晶圆上剥离。该剥离试验的结果示于表1中。
实施例3
以如实施例1相同的方式制备辐射固化型压敏粘着剂组合物B3和由此获得的辐射固化型压敏粘着片C3,除了使用辐射固化型压敏粘着剂A3代替辐射固化型压敏粘着剂A1。
将所述辐射固化型压敏粘着片C3用5-kg橡胶辊施用于半导体晶圆(电路平面间隙,30μm;8英寸;厚度,725μm)的正面。将该晶圆的背面用晶圆研磨机(DFG840,由Disco Corp.制造)研磨至晶圆厚 度为100μm。利用装备有高压汞灯(20mW/cm2)的UM-810(由NittoSeiki Inc.制造),将所述辐射固化型压敏粘着片C3用紫外线在照射距离为10cm和光的积分量为1,800mJ/cm2的条件下进行照射。之后将所述晶圆背面利用溅射装置在处理时间为3分钟的条件下进行金的汽相淀积。在该处理中,所述晶圆背面的最大温度为85℃。之后,将所述压敏粘着片用由Nitto Seiki Inc.制造的HR-8500-II从所述晶圆上剥离。该剥离试验的结果示于表1中。
实施例4
以如实施例1相同的方式制备辐射固化型压敏粘着剂组合物B4和由此获得的辐射固化型压敏粘着片C4,除了使用辐射固化型压敏粘着剂A4代替辐射固化型压敏粘着剂A1。以如实施例3相同的方式进行晶圆背面研磨和背面处理,除了使用辐射固化型压敏粘着片C4代替辐射固化型压敏粘着片C3。之后,将所述压敏粘着片用由Nitto Seiki Inc.制造的HR-8500-II从所述晶圆上剥离。该剥离试验的结果示于表1中。
实施例5
将辐射固化型压敏粘着剂A1(100重量份)与2重量份苯乙酮型光聚合引发剂(Irgacure 184,由Ciba Geigy Ltd.制造)和2重量份多官能异氰酸酯化合物(Coronate L,由Nippon Polyurethane Co.,Ltd.制造)混合以制备辐射固化型压敏粘着剂组合物B5。将该组合物B5施用到经EB处理的聚乙烯膜(厚度,100μm)上,施用的量导致干燥厚度为50μm。将施用的组合物在120℃下干燥1分钟以获得辐射固化型压敏粘着片C5。
将所述辐射固化型压敏粘着片C5用5-kg橡胶辊施用到半导体晶圆(电路平面间隙,30μm;8英寸;厚度,725μm)的正面。将该晶圆的背面用晶圆研磨机(DFG840,由Disco Corp.制造)研磨至晶圆厚度为120μm。利用装备有高压汞灯(20mW/cm2)的UM-810(由NittoSeiki Inc.制造),将所述辐射固化型压敏粘着片C5用紫外线在照射距 离为10cm和光的积分量为1,800mJ/cm2的条件下进行照射。之后将所述晶圆背面利用溅射装置在处理时间为3分钟的条件下进行金的汽相淀积。在该处理中,所述晶圆背面的最大温度为85℃。之后,将所述压敏粘着片用由Nitto Seiki Inc.制造的HR-8500-II从所述晶圆上剥离。该剥离试验的结果示于表1中。
实施例6
以如实施例5相同的方式制备辐射固化型压敏粘着剂组合物B6和由此获得的辐射固化型压敏粘着片C6,除了使用辐射固化型压敏粘着剂A2代替辐射固化型压敏粘着剂A1。以如实施例1相同的方式进行晶圆背面研磨和背面处理,除了使用半导体晶圆(电路平面间隙,50μm;8英寸;厚度,725μm)代替所述半导体晶圆(电路平面间隙,30μm;8英寸;厚度,725μm)和使用所述辐射固化型压敏粘着片C6代替所述辐射固化型压敏粘着片C1。之后,将所述压敏粘着片用由Nitto Seiki Inc.制造的HR-8500-II从所述晶圆上剥离。该剥离试验的结果示于表1中。
实施例7
以如实施例5相同的方式制备辐射固化型压敏粘着剂组合物B7,除了使用所述辐射固化型压敏粘着剂A3代替所述辐射固化型压敏粘着剂A1。以如实施例5相同的方式制备辐射固化型压敏粘着剂片C7,除了使用聚酰亚胺膜(厚度100μm)代替所述聚乙烯膜。
将所述辐射固化型压敏粘着片C7用5-kg橡胶辊施用于半导体晶圆(电路平面间隙,50μm;8英寸;厚度,725μm)的正面。将该晶圆的背面用晶圆研磨机(DFG840,由Disco Corp.制造)研磨至晶圆厚度为130μm。利用装备有高压汞灯(20mW/cm2)的UM-810(由NittoSeiki Inc.制造),将所述辐射固化型压敏粘着片C7用紫外线在照射距离为10cm和光的积分量为500mJ/cm2的条件下进行照射。之后将所述半导体晶圆背切割成IC芯片。将这些IC芯片利用焊接回流设备安 装在母板上。在该操作中的处理时间为5分钟,并且所述IC芯片的背面的最大温度为240℃。之后,将所述压敏粘着片用由Nitto Seiki Inc.制造的HR-8500-II从所述晶圆上剥离。该剥离试验的结果示于表1中。
对比例1
以如实施例5相同的方式制备辐射固化型压敏粘着剂组合物B6和由此获得的辐射固化型压敏粘着片C6,除了使用所述辐射固化型压敏粘着剂A2代替所述辐射固化型压敏粘着剂A1。
将所述辐射固化型压敏粘着片C6用5-kg橡胶辊施用于半导体晶圆(电路平面间隙,50μm;8英寸;厚度,725μm)的正面。将该晶圆的背面用晶圆研磨机(DFG840,由Disco Corp.制造)研磨至晶圆厚度为170μm。之后将所述晶圆背面利用RIE Series(由Advanced PlasmaSystem生产)通过等离子体处理进行清洁,条件为CF4气体/O2的混合比例为10/90,输出为2,000W,和处理时间为5分钟。在该处理中,所述晶圆背面的最大温度为150℃。之后,利用装备有高压汞灯(20mW/cm2)的UM-810(由Nitto Seiki Inc.制造),将所述辐射固化型压敏粘着片C6用紫外线在照射距离为10cm和光的积分量为500mJ/cm2的条件下进行照射。将所述压敏粘着片用由Nitto Seiki Inc.制造的HR-8500-II从所述晶圆上剥离。该剥离试验的结果示于表1中。
对比例2
将压敏粘着剂A5(100重量份)与3重量份多官能异氰酸酯化合物(Coronate L,由Nippon Polyurethane Co.,Ltd.制造)混合以制备压敏粘着剂组合物B8。将该组合物B8施用到经EB处理的聚乙烯膜(厚度,100μm)上,施用的量导致干燥厚度为50μm。将施用的组合物在120℃下干燥1分钟以获得压敏粘着片C8。
将所述压敏粘着片C8用5-kg橡胶辊施用到半导体晶圆(电路平面间隙,50μm;8英寸;厚度,725μm)的正面。将该晶圆的背面用 晶圆研磨机(DFG840,由Disco Corp.制造)研磨至晶圆厚度为170μm。之后将所述晶圆背面利用RIE Series(由Advanced Plasma System生产)通过等离子体处理进行清洁,条件为CF4气体/O2的混合比例为10/90,输出为2,000W,和处理时间为5分钟。在该处理中,所述晶圆背面的最大温度为150℃。之后,将所述压敏粘着片用由Nitto Seiki Inc.制造的HR-8500-II从所述晶圆上剥离。该剥离试验的结果示于表1中。
评价方法
(180°剥离粘合强度)
将在实施例1至7和对比例1中制备的具有宽度为20mm的辐射固化型压敏粘着片和在对比例2中制备的具有宽度为20mm的压敏粘着片在25℃下的65%RH大气中通过将2-kg的橡胶辊向前和向后滚动而各自分别施用到半导体硅晶圆镜面上。使每个施用的压敏粘着片静置30分钟,并然后用通用拉力测试仪(TENSILON/RTM-100,由Orientec Co.,Ltd.制造)在剥离速度为300mm/min和剥离角度为180°的条件下剥离以测定粘合强度(N/20mm)。另外,将在实施例1至7中制备的辐射固化型压敏粘着片施用到半导体硅晶圆上并在如上所述的相同条件下静置。之后,用装备有高压汞灯(20mW/cm2)的UM-810(由Nitto Seiki Inc.制造),用紫外线在照射距离为10cm和如表1中所示的光的积分量条件下从所述辐射固化型压敏粘着片一面进行照射。然后以如上所述的方式检验所述压敏粘着片的180°剥离粘合强度。另一方面,将在对比例1中制备的辐射固化型压敏粘着片施用于半导体硅晶圆上并在如上所述的相同条件下静置,并然后在130℃下热处理5分钟。之后,将样品用装备有高压汞灯(20mW/cm2)的UM-810(由Nitto Seiki Inc.制造),用紫外线在照射距离为10cm和如表1中所示的光的积分量条件下从所述辐射固化型压敏粘着片一面进行照射。然后以如上所述的方式检验所述压敏粘着片的180°剥离粘合强度。获得的结果示于表1中。
(剪切弹性模数)
将在实施例1至7的对比例1和2中制备的压敏粘着剂组合物各自以导致干燥厚度为3mm的量施用到聚乙烯膜(厚度,100μm)上,并在120℃下干燥一分钟以形成压敏粘着剂层。因此,获得辐射固化型压敏粘着片和压敏粘着片。利用弹性计(ARES,由Rheometrics,Inc.生产),检验每个压敏粘着片的压敏粘着剂层的剪切弹性模数(kPa),条件为ω为1Hz,板直径Φ为7.9mm,应变为1%,和检测温度为25℃。另外,将利用在实施例1至7中制备的压敏粘着剂组合物制备的每个压敏粘着片的压敏粘着剂层利用装备有高压汞灯(20mW/cm2)的UM-810(由Nitto Seiki Inc.制造),用紫外线在照射距离为10cm和如表1中所示的光的积分量条件下进行照射。之后以如上所述相同的方式检验如此固化的压敏粘着剂层的剪切弹性模数(kPa)。另一方面,将利用在对比例1中制备的压敏粘着剂组合物制备的压敏粘着片在130℃下热处理5分钟。之后,将该压敏粘着剂层用装备有高压汞灯(20mW/cm2)的UM-810(由Nitto Seiki Inc.制造),用紫外线在照射距离为10cm和如表1中所示的光的积分量条件下进行照射。然后以如上所述相同的方式检验如此获得的压敏粘着剂层的剪切弹性模数(kPa)。所得的结果示于表1中。另外,通过将在所述照射前的各个压敏粘着剂层的弹性模数除以在所述照射后的该压敏粘着剂层的弹性模数获得的值(X)示于表1中。
表1
如从表1中清楚可知的,本发明的半导体晶圆背面加工的方法不会导致晶圆裂纹,粘着剂残留到所述晶圆上等,并且可保证高的成品率。
尽管已经详细地并参照其明确的实施方案说明了本发明,但本领域技术人员应清楚的是可在其中进行多种修改和变化而不背离本发明的范围。
本申请基于2006年8月29日提交的日本专利申请2006-232437,其全部内容通过引用并入本文中。
另外本文中引用的所有参考文献以其全部内容并入。
Claims (8)
1.半导体晶圆背面加工方法,该方法包括:
在半导体晶圆的正面施用辐射固化型压敏粘着片,该辐射固化型压敏粘着片包括基材膜和在该基材膜的一侧上布置的压敏粘着剂层,所述半导体晶圆的正面具有凹陷和凸出;
以辐射固化型压敏粘着片附着于半导体晶圆的正面的状态研磨半导体晶圆的背面;和
放射线照射压敏粘着片从而使压敏粘着剂层固化,然后使所述经过研磨的半导体晶圆的背面经历表面处理,
其中压敏粘着剂层的放射线照射前的25℃时的弹性模数为5到60,000kPa,和所述粘着剂层的放射线照射前测得的弹性模数除以所述粘着剂层的放射线照射后测得的弹性模数所得的值(X)为8×10-5到0.35。
2.根据权利要求1的方法,其中压敏粘着剂层含有辐射固化型丙烯酸类聚合物作为组分,该辐射固化型丙烯酸类聚合物在其分子内含有碳碳双键。
3.根据权利要求1的方法,其中压敏粘着剂层含有辐射固化型低聚物作为组分。
4.根据权利要求1的方法,其中压敏粘着剂层的放射线照射前测得的粘合强度为0.8N/20mm或更高以及放射线照射后测得的粘合强度低于0.8N/20mm。
5.衬底背面加工方法,该方法包括:
在衬底的正面施用辐射固化型压敏粘着片,该辐射固化型压敏粘着片包括基材膜和在该基材膜的一侧上布置的压敏粘着剂层;和
放射线照射压敏粘着片从而使压敏粘着剂层固化,然后使衬底的背面经历热处理,
其中压敏粘着剂层的放射线照射前的25℃时的弹性模数为5到60,000kPa,和所述粘着剂层的放射线照射前测得的弹性模数除以所述粘着剂层的放射线照射后测得的弹性模数所得的值(X)为8×10-5到0.35。
6.根据权利要求5的方法,其中压敏粘着剂层含有辐射固化型丙烯酸类聚合物作为组分,该辐射固化型丙烯酸类聚合物在其分子内含有碳碳双键。
7.根据权利要求5的方法,其中压敏粘着剂层含有辐射固化型低聚物作为组分。
8.根据权利要求5的方法,其中压敏粘着剂层的放射线照射前测得的粘合强度为0.8N/20mm或更高以及放射线照射后测得的粘合强度低于0.8N/20mm。
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JP2007180252A (ja) * | 2005-12-28 | 2007-07-12 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
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JP4493643B2 (ja) * | 2006-12-06 | 2010-06-30 | 日東電工株式会社 | 再剥離型粘着剤組成物、及び粘着テープ又はシート |
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- 2007-08-28 US US11/846,047 patent/US20080057216A1/en not_active Abandoned
- 2007-08-28 EP EP20070016857 patent/EP1895581A3/en not_active Withdrawn
- 2007-08-29 TW TW96132031A patent/TW200814179A/zh unknown
- 2007-08-29 KR KR1020070087048A patent/KR101172933B1/ko not_active IP Right Cessation
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2011
- 2011-08-12 US US13/208,948 patent/US20110300709A1/en not_active Abandoned
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KR101172933B1 (ko) | 2012-08-10 |
JP2008060151A (ja) | 2008-03-13 |
TW200814179A (en) | 2008-03-16 |
CN101136329A (zh) | 2008-03-05 |
EP1895581A2 (en) | 2008-03-05 |
EP1895581A3 (en) | 2012-05-23 |
US20110300709A1 (en) | 2011-12-08 |
KR20080020540A (ko) | 2008-03-05 |
US20080057216A1 (en) | 2008-03-06 |
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