CN100517702C - 超快恢复二极管模块 - Google Patents
超快恢复二极管模块 Download PDFInfo
- Publication number
- CN100517702C CN100517702C CNB2006100383659A CN200610038365A CN100517702C CN 100517702 C CN100517702 C CN 100517702C CN B2006100383659 A CNB2006100383659 A CN B2006100383659A CN 200610038365 A CN200610038365 A CN 200610038365A CN 100517702 C CN100517702 C CN 100517702C
- Authority
- CN
- China
- Prior art keywords
- recovery diode
- main electrode
- ultrafast recovery
- protective layer
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000011084 recovery Methods 0.000 title claims abstract description 49
- 239000004033 plastic Substances 0.000 claims abstract description 27
- 239000011241 protective layer Substances 0.000 claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010949 copper Substances 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 229920001971 elastomer Polymers 0.000 claims abstract description 11
- 239000003822 epoxy resin Substances 0.000 claims abstract description 11
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 11
- 229920002631 room-temperature vulcanizate silicone Polymers 0.000 claims abstract description 11
- 238000005452 bending Methods 0.000 claims abstract description 10
- 238000005476 soldering Methods 0.000 claims abstract description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 18
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 17
- 238000003466 welding Methods 0.000 claims description 10
- 239000004615 ingredient Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 5
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100383659A CN100517702C (zh) | 2006-02-17 | 2006-02-17 | 超快恢复二极管模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100383659A CN100517702C (zh) | 2006-02-17 | 2006-02-17 | 超快恢复二极管模块 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1828889A CN1828889A (zh) | 2006-09-06 |
CN100517702C true CN100517702C (zh) | 2009-07-22 |
Family
ID=36947154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100383659A Active CN100517702C (zh) | 2006-02-17 | 2006-02-17 | 超快恢复二极管模块 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100517702C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101820227A (zh) * | 2010-04-13 | 2010-09-01 | 陈兴忠 | 超快恢复开关模块 |
CN102201396A (zh) * | 2011-05-31 | 2011-09-28 | 常州瑞华电力电子器件有限公司 | 一种大规格igbt模块及其封装方法 |
CN102593071A (zh) * | 2012-03-02 | 2012-07-18 | 深圳麦格米特电气股份有限公司 | 一种焊机功率管封装结构 |
CN106601719B (zh) * | 2014-11-05 | 2019-07-30 | 成都赛力康电气有限公司 | 一种快恢复二极管模块 |
CN106449616B (zh) * | 2016-12-02 | 2019-02-26 | 北京北广科技股份有限公司 | 一种大功率射频模块及其制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040164347A1 (en) * | 2003-01-15 | 2004-08-26 | Advanced Power Technology, Inc., A Delaware Corporation | Design and fabrication of rugged FRED |
CN1665003A (zh) * | 2005-03-14 | 2005-09-07 | 西安交通大学 | 基于压接互连技术的电力电子集成模块的制备方法 |
-
2006
- 2006-02-17 CN CNB2006100383659A patent/CN100517702C/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040164347A1 (en) * | 2003-01-15 | 2004-08-26 | Advanced Power Technology, Inc., A Delaware Corporation | Design and fabrication of rugged FRED |
CN1665003A (zh) * | 2005-03-14 | 2005-09-07 | 西安交通大学 | 基于压接互连技术的电力电子集成模块的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1828889A (zh) | 2006-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104170086B (zh) | 半导体装置及半导体装置的制造方法 | |
CN103000603B (zh) | 晶体管结构及其封装方法 | |
CN107195623A (zh) | 一种双面散热高可靠功率模块 | |
CN100392856C (zh) | 功率半导体模块 | |
CN107636827A (zh) | 功率电子设备模块 | |
CN100517702C (zh) | 超快恢复二极管模块 | |
CN103311193A (zh) | 半导体功率模块封装结构及其制备方法 | |
CN110246835B (zh) | 一种三维集成高压碳化硅模块封装结构 | |
CN201773840U (zh) | 无邦定线的igbt功率模块 | |
CN207165543U (zh) | 一种低寄生电感双面散热功率模块 | |
CN108122896A (zh) | 一种适合高频应用的薄型功率模块 | |
Deshpande et al. | High power density 1700-V/300-A Si-IGBT and SiC-MOSFET hybrid switch-based half-bridge power module | |
CN107146775A (zh) | 一种低寄生电感双面散热功率模块 | |
CN104218031A (zh) | 母排联接式高性能igbt模块及其制作方法 | |
CN103795272A (zh) | 一种三相整流桥功率模块 | |
CN207165564U (zh) | 一种双面散热高可靠功率模块 | |
CN110071079A (zh) | 一种功率器件封装结构及其方法 | |
CN217822755U (zh) | 采用石墨铜垫块的双面散热模块的封装结构和电动汽车 | |
CN214705909U (zh) | 一种3d双面散热封装结构的功率模块 | |
CN115116986A (zh) | 一种3d双面散热封装结构的功率模块 | |
CN203722569U (zh) | 用于连接晶体硅光伏发电组件的光伏接线盒 | |
CN204614784U (zh) | 半导体器件、智能功率模块和空调器 | |
CN203775045U (zh) | 一种智能半导体功率模块 | |
CN106783773A (zh) | 一种非绝缘双塔型二极管模块 | |
CN106449585A (zh) | 一种大电流场效应管的封装结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: YAN SHUFANG Owner name: CHANGZHOU RUNHUA POWER ELECTRONIC DEVICES CO., LTD Free format text: FORMER OWNER: CHEN XINGZHONG Effective date: 20100329 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 213200 NO.62, YANGJIAYUAN, XIATANG VILLAGE COMMITTEE, ECONOMIC DEVELOPMENT ZONE,JINTAN CITY, JIANGSU PROVINCE TO: 213231 CHENG XINGZHONG,SHETOU TOWN, JINTAN CITY, JIANGSU PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100329 Address after: 213231 Chen Xingzhong, head town, Jintan, Jiangsu Patentee after: Changzhou Ruihua Power Electronic Devices Co., Ltd. Address before: 213200, No. 62, Yang village, lower Tong village committee, Jintan Economic Development Zone, Jiangsu Patentee before: Chen Xingzhong Patentee before: Yan Shufang |