CN100364064C - 聚焦环和等离子体处理装置 - Google Patents

聚焦环和等离子体处理装置 Download PDF

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Publication number
CN100364064C
CN100364064C CNB2004100784994A CN200410078499A CN100364064C CN 100364064 C CN100364064 C CN 100364064C CN B2004100784994 A CNB2004100784994 A CN B2004100784994A CN 200410078499 A CN200410078499 A CN 200410078499A CN 100364064 C CN100364064 C CN 100364064C
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focusing ring
semiconductor wafer
processed substrate
mentioned
upper member
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Chinese (zh)
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CN1591793A (zh
Inventor
輿石公
田中秀朗
冈山信幸
宫川正章
水上俊介
清水涉
广濑润
若木俊克
三轮智典
大薮淳
林大辅
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CNB2004100784994A 2003-09-05 2004-09-06 聚焦环和等离子体处理装置 Active CN100364064C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003314815 2003-09-05
JP2003314815 2003-09-05
JP200455565 2004-02-27
JP2004055565 2004-02-27

Related Child Applications (1)

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CN2007101946078A Division CN101162689B (zh) 2003-09-05 2004-09-06 聚焦环和等离子体处理装置

Publications (2)

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CN1591793A CN1591793A (zh) 2005-03-09
CN100364064C true CN100364064C (zh) 2008-01-23

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ID=34621854

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CNB2004100784994A Active CN100364064C (zh) 2003-09-05 2004-09-06 聚焦环和等离子体处理装置
CN2007101946078A Expired - Fee Related CN101162689B (zh) 2003-09-05 2004-09-06 聚焦环和等离子体处理装置

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Country Status (4)

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JP (1) JP5313211B2 (ko)
KR (1) KR100576399B1 (ko)
CN (2) CN100364064C (ko)
TW (2) TW200520632A (ko)

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JP2007250967A (ja) * 2006-03-17 2007-09-27 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング
US7988814B2 (en) 2006-03-17 2011-08-02 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
CN101447394B (zh) * 2007-11-28 2012-01-11 北京北方微电子基地设备工艺研究中心有限责任公司 一种改善半导体制程中加工件背面污染的方法
JP5274918B2 (ja) * 2008-07-07 2013-08-28 東京エレクトロン株式会社 プラズマ処理装置のチャンバー内部材の温度制御方法、チャンバー内部材及び基板載置台、並びにそれを備えたプラズマ処理装置
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US20100101729A1 (en) * 2008-10-28 2010-04-29 Applied Materials, Inc. Process kit having reduced erosion sensitivity
JP2010278166A (ja) * 2009-05-27 2010-12-09 Tokyo Electron Ltd プラズマ処理用円環状部品、及びプラズマ処理装置
JP5563347B2 (ja) 2010-03-30 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置及び半導体装置の製造方法
JP5741124B2 (ja) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 プラズマ処理装置
US20130000848A1 (en) * 2011-07-01 2013-01-03 Novellus Systems Inc. Pedestal with edge gas deflector for edge profile control
JP5970268B2 (ja) * 2012-07-06 2016-08-17 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
US20160099162A1 (en) * 2013-06-26 2016-04-07 Applied Materials, Inc. Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber
JP2015115421A (ja) * 2013-12-10 2015-06-22 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング
WO2015116245A1 (en) * 2014-01-30 2015-08-06 Applied Materials, Inc. Gas confiner assembly for eliminating shadow frame
WO2015116244A1 (en) * 2014-01-30 2015-08-06 Applied Materials, Inc. Corner spoiler for improving profile uniformity
CN103811247B (zh) * 2014-02-17 2016-04-13 清华大学 用于等离子体刻蚀的聚焦环及具有其的等离子体刻蚀装置
JP5615454B1 (ja) * 2014-02-25 2014-10-29 コバレントマテリアル株式会社 フォーカスリング
CN106920725B (zh) * 2015-12-24 2018-10-12 中微半导体设备(上海)有限公司 一种聚焦环的温度调整装置及方法
CN108369922B (zh) 2016-01-26 2023-03-21 应用材料公司 晶片边缘环升降解决方案
CN116110846A (zh) * 2016-01-26 2023-05-12 应用材料公司 晶片边缘环升降解决方案
JP6586394B2 (ja) * 2016-03-28 2019-10-02 東京エレクトロン株式会社 静電容量を表すデータを取得する方法
US10910195B2 (en) * 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
CN110546733B (zh) * 2017-03-31 2022-10-11 玛特森技术公司 在处理腔室中防止工件上的材料沉积
JP6278498B1 (ja) * 2017-05-19 2018-02-14 日本新工芯技株式会社 リング状部材の製造方法及びリング状部材
US20180334746A1 (en) * 2017-05-22 2018-11-22 Lam Research Corporation Wafer Edge Contact Hardware and Methods to Eliminate Deposition at Wafer Backside Edge and Notch
JP6797079B2 (ja) * 2017-06-06 2020-12-09 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム
JP6974088B2 (ja) * 2017-09-15 2021-12-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR102215873B1 (ko) * 2017-10-17 2021-02-16 가부시키가이샤 아루박 피처리체의 처리 장치
US10600623B2 (en) 2018-05-28 2020-03-24 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
JP6846384B2 (ja) * 2018-06-12 2021-03-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
US12009236B2 (en) 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7278160B2 (ja) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
CN113348732B (zh) * 2019-12-18 2024-02-09 株式会社日立高新技术 等离子处理装置
JP7365912B2 (ja) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 エッジリング及び基板処理装置
KR20240055871A (ko) * 2021-02-12 2024-04-29 램 리써치 코포레이션 C-슈라우드의 기계적 강도 또는 수명에 영향을 주지 않고 플라즈마 균일성을 위한 c-슈라우드 조정
TWI824722B (zh) * 2022-09-16 2023-12-01 鴻揚半導體股份有限公司 聚焦環及半導體晶圓加工方法

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WO1999014788A1 (en) * 1997-09-16 1999-03-25 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JP2000188284A (ja) * 1998-12-22 2000-07-04 Hitachi Ltd プラズマ処理装置
JP2000208492A (ja) * 1999-01-18 2000-07-28 Sony Corp タングステンプラズマエッチング方法とタングステンプラズマエッチング装置
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US20020108933A1 (en) * 2000-03-17 2002-08-15 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
JP2008017090A (ja) * 2006-07-05 2008-01-24 Casio Comput Co Ltd 撮像装置、及び電子ズーム方法

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US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
TWI272877B (en) * 2001-12-13 2007-02-01 Tokyo Electron Ltd Ring mechanism, and plasma processing device using the ring mechanism

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
WO1999014788A1 (en) * 1997-09-16 1999-03-25 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
JP2000188284A (ja) * 1998-12-22 2000-07-04 Hitachi Ltd プラズマ処理装置
JP2000208492A (ja) * 1999-01-18 2000-07-28 Sony Corp タングステンプラズマエッチング方法とタングステンプラズマエッチング装置
US20020108933A1 (en) * 2000-03-17 2002-08-15 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
JP2008017090A (ja) * 2006-07-05 2008-01-24 Casio Comput Co Ltd 撮像装置、及び電子ズーム方法

Also Published As

Publication number Publication date
CN1591793A (zh) 2005-03-09
TWI488236B (zh) 2015-06-11
KR100576399B1 (ko) 2006-05-03
CN101162689B (zh) 2010-08-18
TWI370707B (ko) 2012-08-11
TW201243942A (en) 2012-11-01
TW200520632A (en) 2005-06-16
JP5313211B2 (ja) 2013-10-09
KR20050025079A (ko) 2005-03-11
CN101162689A (zh) 2008-04-16
JP2010232694A (ja) 2010-10-14

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