CN100337340C - 有机el元件的制造方法及装置 - Google Patents
有机el元件的制造方法及装置 Download PDFInfo
- Publication number
- CN100337340C CN100337340C CNB018210910A CN01821091A CN100337340C CN 100337340 C CN100337340 C CN 100337340C CN B018210910 A CNB018210910 A CN B018210910A CN 01821091 A CN01821091 A CN 01821091A CN 100337340 C CN100337340 C CN 100337340C
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- CN
- China
- Prior art keywords
- organic
- substrate
- deposition apparatus
- film
- vacuum deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000011368 organic material Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000002309 gasification Methods 0.000 claims description 22
- 238000001771 vacuum deposition Methods 0.000 claims description 18
- 238000007740 vapor deposition Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 5
- 238000009825 accumulation Methods 0.000 claims description 3
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000011084 recovery Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 abstract description 63
- 230000008020 evaporation Effects 0.000 abstract description 62
- 239000010408 film Substances 0.000 abstract description 23
- 238000000151 deposition Methods 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000007850 degeneration Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 10
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000000265 homogenisation Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 2
- FCVHBUFELUXTLR-UHFFFAOYSA-N [Li].[AlH3] Chemical class [Li].[AlH3] FCVHBUFELUXTLR-UHFFFAOYSA-N 0.000 description 2
- 210000003298 dental enamel Anatomy 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VZBQXRRQMCCPPP-UHFFFAOYSA-N iron quinoline Chemical compound [Fe].N1=CC=CC2=CC=CC=C12 VZBQXRRQMCCPPP-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000277289 Salmo salar Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 210000001138 tear Anatomy 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP390428/2000 | 2000-12-22 | ||
JP2000390428A JP2002190389A (ja) | 2000-12-22 | 2000-12-22 | 有機el素子の製造方法及び装置 |
JP390428/00 | 2000-12-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1483300A CN1483300A (zh) | 2004-03-17 |
CN100337340C true CN100337340C (zh) | 2007-09-12 |
Family
ID=18856799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018210910A Expired - Fee Related CN100337340C (zh) | 2000-12-22 | 2001-12-20 | 有机el元件的制造方法及装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2002190389A (zh) |
KR (1) | KR100788152B1 (zh) |
CN (1) | CN100337340C (zh) |
TW (1) | TW546394B (zh) |
WO (1) | WO2002052903A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005149924A (ja) * | 2003-11-17 | 2005-06-09 | Toray Ind Inc | 蒸着装置および蒸着材料の回収・再利用方法並びに有機電界発光装置の製造方法。 |
CN103270186B (zh) | 2010-12-23 | 2015-01-14 | 夏普株式会社 | 成膜材料的回收方法 |
WO2012090772A1 (ja) * | 2010-12-27 | 2012-07-05 | シャープ株式会社 | 蒸着装置、削具および蒸着材料の回収方法 |
CN103270187A (zh) | 2010-12-27 | 2013-08-28 | 夏普株式会社 | 蒸镀装置和回收装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08111285A (ja) * | 1994-10-07 | 1996-04-30 | Tdk Corp | 有機エレクトロルミネセンス素子の製造方法及びその装置 |
JPH10168559A (ja) * | 1996-12-06 | 1998-06-23 | Ulvac Japan Ltd | 有機薄膜形成装置及び有機材料の再利用方法 |
CN1188516A (zh) * | 1996-04-01 | 1998-07-22 | 东丽株式会社 | 带薄膜基板的制造方法和制造装置 |
JPH10195641A (ja) * | 1997-01-09 | 1998-07-28 | Ulvac Japan Ltd | 有機薄膜形成装置 |
CN1212114A (zh) * | 1996-11-25 | 1999-03-24 | 精工爱普生株式会社 | 有机电致发光元件及其制造方法和有机电致发光显示装置 |
JPH11229123A (ja) * | 1998-02-12 | 1999-08-24 | Casio Comput Co Ltd | 蒸着装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6208075B1 (en) * | 1998-11-05 | 2001-03-27 | Eastman Kodak Company | Conductive fluorocarbon polymer and method of making same |
JP3742567B2 (ja) * | 2000-06-22 | 2006-02-08 | 松下電工株式会社 | 真空蒸着装置及び真空蒸着方法 |
JP2002203682A (ja) * | 2000-10-26 | 2002-07-19 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
-
2000
- 2000-12-22 JP JP2000390428A patent/JP2002190389A/ja active Pending
-
2001
- 2001-12-19 TW TW090131529A patent/TW546394B/zh not_active IP Right Cessation
- 2001-12-20 CN CNB018210910A patent/CN100337340C/zh not_active Expired - Fee Related
- 2001-12-20 KR KR1020037007313A patent/KR100788152B1/ko not_active IP Right Cessation
- 2001-12-20 WO PCT/JP2001/011192 patent/WO2002052903A1/ja active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08111285A (ja) * | 1994-10-07 | 1996-04-30 | Tdk Corp | 有機エレクトロルミネセンス素子の製造方法及びその装置 |
CN1188516A (zh) * | 1996-04-01 | 1998-07-22 | 东丽株式会社 | 带薄膜基板的制造方法和制造装置 |
CN1212114A (zh) * | 1996-11-25 | 1999-03-24 | 精工爱普生株式会社 | 有机电致发光元件及其制造方法和有机电致发光显示装置 |
JPH10168559A (ja) * | 1996-12-06 | 1998-06-23 | Ulvac Japan Ltd | 有機薄膜形成装置及び有機材料の再利用方法 |
JPH10195641A (ja) * | 1997-01-09 | 1998-07-28 | Ulvac Japan Ltd | 有機薄膜形成装置 |
JPH11229123A (ja) * | 1998-02-12 | 1999-08-24 | Casio Comput Co Ltd | 蒸着装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20030072553A (ko) | 2003-09-15 |
JP2002190389A (ja) | 2002-07-05 |
KR100788152B1 (ko) | 2007-12-21 |
TW546394B (en) | 2003-08-11 |
WO2002052903A1 (fr) | 2002-07-04 |
CN1483300A (zh) | 2004-03-17 |
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Owner name: NIPPON STEEL + SUMITOMO METAL CORPORATION Free format text: FORMER NAME: NIPPON SEEL CHEMICAL CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Nippon Steel Chemical Co. Address before: Tokyo, Japan Patentee before: Nippon Seel Chemical Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070912 Termination date: 20151220 |
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