CH594984A5 - - Google Patents
Info
- Publication number
- CH594984A5 CH594984A5 CH692976A CH692976A CH594984A5 CH 594984 A5 CH594984 A5 CH 594984A5 CH 692976 A CH692976 A CH 692976A CH 692976 A CH692976 A CH 692976A CH 594984 A5 CH594984 A5 CH 594984A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH692976A CH594984A5 (de) | 1976-06-02 | 1976-06-02 | |
DE19762661096 DE2661096C2 (de) | 1976-06-02 | 1976-06-26 | |
DE19762628793 DE2628793A1 (de) | 1976-06-02 | 1976-06-26 | Thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH692976A CH594984A5 (de) | 1976-06-02 | 1976-06-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH594984A5 true CH594984A5 (de) | 1978-01-31 |
Family
ID=4317256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH692976A CH594984A5 (de) | 1976-06-02 | 1976-06-02 |
Country Status (2)
Country | Link |
---|---|
CH (1) | CH594984A5 (de) |
DE (2) | DE2661096C2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2853292A1 (de) * | 1978-11-24 | 1980-06-12 | Bbc Brown Boveri & Cie | Optisch aktivierbares halbleiterbauelement |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH622127A5 (de) * | 1977-12-21 | 1981-03-13 | Bbc Brown Boveri & Cie | |
JPS63260078A (ja) * | 1987-04-17 | 1988-10-27 | Hitachi Ltd | 過電圧自己保護型サイリスタ |
JPH01136369A (ja) * | 1987-11-21 | 1989-05-29 | Toshiba Corp | 過電圧保護機能付半導体装置の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE335178B (de) * | 1970-02-24 | 1971-05-17 | Asea Ab | |
DE2140993C3 (de) * | 1971-08-16 | 1979-06-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
-
1976
- 1976-06-02 CH CH692976A patent/CH594984A5/xx not_active IP Right Cessation
- 1976-06-26 DE DE19762661096 patent/DE2661096C2/de not_active Expired
- 1976-06-26 DE DE19762628793 patent/DE2628793A1/de active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2853292A1 (de) * | 1978-11-24 | 1980-06-12 | Bbc Brown Boveri & Cie | Optisch aktivierbares halbleiterbauelement |
Also Published As
Publication number | Publication date |
---|---|
DE2628793C2 (de) | 1988-06-16 |
DE2661096C2 (de) | 1989-04-06 |
DE2628793A1 (de) | 1977-12-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |