AU5179098A - Method and apparatus for directional deposition of thin films using laser ablation - Google Patents
Method and apparatus for directional deposition of thin films using laser ablationInfo
- Publication number
- AU5179098A AU5179098A AU51790/98A AU5179098A AU5179098A AU 5179098 A AU5179098 A AU 5179098A AU 51790/98 A AU51790/98 A AU 51790/98A AU 5179098 A AU5179098 A AU 5179098A AU 5179098 A AU5179098 A AU 5179098A
- Authority
- AU
- Australia
- Prior art keywords
- thin films
- laser ablation
- directional deposition
- directional
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000008021 deposition Effects 0.000 title 1
- 238000000608 laser ablation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75184396A | 1996-11-18 | 1996-11-18 | |
US08751843 | 1996-11-18 | ||
PCT/US1997/020731 WO1998022635A1 (en) | 1996-11-18 | 1997-11-12 | Method and apparatus for directional deposition of thin films using laser ablation |
Publications (1)
Publication Number | Publication Date |
---|---|
AU5179098A true AU5179098A (en) | 1998-06-10 |
Family
ID=25023738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU51790/98A Abandoned AU5179098A (en) | 1996-11-18 | 1997-11-12 | Method and apparatus for directional deposition of thin films using laser ablation |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU5179098A (en) |
WO (1) | WO1998022635A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1422313A1 (en) | 2002-11-05 | 2004-05-26 | Theva Dünnschichttechnik GmbH | Apparatus and method for vacuum vapor deposition of a coating material with continuated material replenishment |
WO2006090005A1 (en) * | 2005-02-23 | 2006-08-31 | Pintavision Oy | Pulsed laser deposition method |
FI20051120A0 (en) * | 2005-02-23 | 2005-11-04 | Fortion Designit Oy | Workpiece containing removable optical products and process for making them |
FI20060181L (en) * | 2006-02-23 | 2007-08-24 | Picodeon Ltd Oy | Procedure for producing surfaces and materials using laser ablation |
US8663754B2 (en) * | 2009-03-09 | 2014-03-04 | Imra America, Inc. | Pulsed laser micro-deposition pattern formation |
TW201205761A (en) * | 2010-05-17 | 2012-02-01 | Tno | Through silicon via treatment device and method arranged for treatment of TSVs in a chip manufacturing process |
US20150132507A1 (en) * | 2012-05-25 | 2015-05-14 | University Of Leeds | Medium For Random Laser And Manufacturing Process of the Same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0435801A3 (en) * | 1989-12-13 | 1992-11-19 | International Business Machines Corporation | Deposition method for high aspect ratio features |
JP3255469B2 (en) * | 1992-11-30 | 2002-02-12 | 三菱電機株式会社 | Laser thin film forming equipment |
JPH07331423A (en) * | 1994-06-10 | 1995-12-19 | Hitachi Ltd | Formation of thin film and device therefor |
-
1997
- 1997-11-12 WO PCT/US1997/020731 patent/WO1998022635A1/en active Application Filing
- 1997-11-12 AU AU51790/98A patent/AU5179098A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO1998022635A1 (en) | 1998-05-28 |
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