ATE544178T1 - Halbleiterbauelemente und verfahren zur herstellung - Google Patents
Halbleiterbauelemente und verfahren zur herstellungInfo
- Publication number
- ATE544178T1 ATE544178T1 AT07805079T AT07805079T ATE544178T1 AT E544178 T1 ATE544178 T1 AT E544178T1 AT 07805079 T AT07805079 T AT 07805079T AT 07805079 T AT07805079 T AT 07805079T AT E544178 T1 ATE544178 T1 AT E544178T1
- Authority
- AT
- Austria
- Prior art keywords
- fin
- gate electrode
- electrode material
- thickness
- upstanding
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- 239000007772 electrode material Substances 0.000 abstract 6
- 239000003989 dielectric material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/845—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06116968 | 2006-07-11 | ||
PCT/IB2007/052698 WO2008007331A2 (en) | 2006-07-11 | 2007-07-09 | Semiconductor devices and methods of manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE544178T1 true ATE544178T1 (de) | 2012-02-15 |
Family
ID=38739387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT07805079T ATE544178T1 (de) | 2006-07-11 | 2007-07-09 | Halbleiterbauelemente und verfahren zur herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US7919364B2 (de) |
EP (1) | EP2041780B1 (de) |
CN (1) | CN101490822B (de) |
AT (1) | ATE544178T1 (de) |
WO (1) | WO2008007331A2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8203182B2 (en) * | 2007-03-14 | 2012-06-19 | Nxp B.V. | FinFET with two independent gates and method for fabricating the same |
JP2009088134A (ja) | 2007-09-28 | 2009-04-23 | Elpida Memory Inc | 半導体装置、半導体装置の製造方法並びにデータ処理システム |
JP5410666B2 (ja) * | 2007-10-22 | 2014-02-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN102420232B (zh) * | 2010-09-28 | 2014-08-13 | 中国科学院微电子研究所 | 一种闪存器件及其形成方法 |
CN103367162B (zh) * | 2012-04-08 | 2016-05-18 | 中国科学院微电子研究所 | 鳍形场效应晶体管制造方法 |
US9647066B2 (en) * | 2012-04-24 | 2017-05-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy FinFET structure and method of making same |
US8697515B2 (en) | 2012-06-06 | 2014-04-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a FinFET device |
US8617961B1 (en) | 2012-07-18 | 2013-12-31 | International Business Machines Corporation | Post-gate isolation area formation for fin field effect transistor device |
CN104425601B (zh) * | 2013-08-30 | 2018-02-16 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
WO2015033490A1 (ja) * | 2013-09-04 | 2015-03-12 | パナソニック株式会社 | 半導体装置 |
CN104465751B (zh) * | 2013-09-16 | 2018-08-31 | 联华电子股份有限公司 | 半导体装置 |
US9373719B2 (en) * | 2013-09-16 | 2016-06-21 | United Microelectronics Corp. | Semiconductor device |
US9647113B2 (en) | 2014-03-05 | 2017-05-09 | International Business Machines Corporation | Strained FinFET by epitaxial stressor independent of gate pitch |
CN105633157B (zh) * | 2015-03-31 | 2019-07-30 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
CN107634088A (zh) * | 2016-07-18 | 2018-01-26 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法、电子装置 |
US10032759B2 (en) * | 2016-11-28 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company Limited | High-density semiconductor device |
US10424663B2 (en) * | 2017-05-23 | 2019-09-24 | International Business Machines Corporation | Super long channel device within VFET architecture |
FR3089343B1 (fr) * | 2018-11-29 | 2021-10-08 | Commissariat Energie Atomique | Procede de realisation d’un transistor fet |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6348409B1 (en) * | 1999-04-01 | 2002-02-19 | Taiwan Semiconductor Manufacturing Company | Self aligned contact plug technology |
US6787402B1 (en) | 2001-04-27 | 2004-09-07 | Advanced Micro Devices, Inc. | Double-gate vertical MOSFET transistor and fabrication method |
US6770516B2 (en) | 2002-09-05 | 2004-08-03 | Taiwan Semiconductor Manufacturing Company | Method of forming an N channel and P channel FINFET device on the same semiconductor substrate |
US6853020B1 (en) | 2002-11-08 | 2005-02-08 | Advanced Micro Devices, Inc. | Double-gate semiconductor device |
US6855582B1 (en) * | 2003-06-12 | 2005-02-15 | Advanced Micro Devices, Inc. | FinFET gate formation using reverse trim and oxide polish |
US6756643B1 (en) | 2003-06-12 | 2004-06-29 | Advanced Micro Devices, Inc. | Dual silicon layer for chemical mechanical polishing planarization |
US6855607B2 (en) * | 2003-06-12 | 2005-02-15 | Advanced Micro Devices, Inc. | Multi-step chemical mechanical polishing of a gate area in a FinFET |
US7355253B2 (en) * | 2003-08-22 | 2008-04-08 | International Business Machines Corporation | Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates |
JP2005116969A (ja) | 2003-10-10 | 2005-04-28 | Toshiba Corp | 半導体装置及びその製造方法 |
US7105390B2 (en) | 2003-12-30 | 2006-09-12 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
JP4852694B2 (ja) | 2004-03-02 | 2012-01-11 | 独立行政法人産業技術総合研究所 | 半導体集積回路およびその製造方法 |
KR100560818B1 (ko) | 2004-06-02 | 2006-03-13 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US7422946B2 (en) | 2004-09-29 | 2008-09-09 | Intel Corporation | Independently accessed double-gate and tri-gate transistors in same process flow |
-
2007
- 2007-07-09 US US12/307,800 patent/US7919364B2/en active Active
- 2007-07-09 AT AT07805079T patent/ATE544178T1/de active
- 2007-07-09 CN CN2007800258740A patent/CN101490822B/zh not_active Expired - Fee Related
- 2007-07-09 WO PCT/IB2007/052698 patent/WO2008007331A2/en active Application Filing
- 2007-07-09 EP EP07805079A patent/EP2041780B1/de not_active Not-in-force
Also Published As
Publication number | Publication date |
---|---|
US20090209092A1 (en) | 2009-08-20 |
EP2041780B1 (de) | 2012-02-01 |
WO2008007331A3 (en) | 2008-03-06 |
US7919364B2 (en) | 2011-04-05 |
WO2008007331A2 (en) | 2008-01-17 |
CN101490822B (zh) | 2011-03-16 |
EP2041780A2 (de) | 2009-04-01 |
CN101490822A (zh) | 2009-07-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE544178T1 (de) | Halbleiterbauelemente und verfahren zur herstellung | |
JP2011044517A5 (de) | ||
WO2006079964A3 (en) | Method of fabricating a dual-gate fet | |
JP2009033145A5 (de) | ||
TW200734780A (en) | Display device and manufacturing method therefor | |
JP2008294408A5 (de) | ||
TW200629422A (en) | Method of manufacturing a capaciotr and a metal gate on a semiconductor device | |
SG166065A1 (en) | Semiconductor device and manufacturing method thereof | |
WO2004107399A3 (en) | Transistor with independant gate structures | |
ATE480869T1 (de) | Verfahren zur herstellung eines halbleiterbauelements mit ultraschmalem kanal | |
JP2009038368A5 (de) | ||
JP2006504268A5 (de) | ||
TW200715566A (en) | Display device and method of manufacturing the same | |
JP2005086024A5 (de) | ||
JP2008091392A5 (de) | ||
TW200707750A (en) | Flat panel display and manufacturing method of flat panel display | |
DE60236436D1 (de) | Einzelelektrontransistoren und verfahren zur herstellung | |
JP2009239276A5 (de) | ||
WO2008117395A1 (ja) | 有機半導体素子及びその製造方法 | |
JP2009224386A5 (de) | ||
TW200729409A (en) | Method for fabricating semiconductor device | |
WO2008087763A1 (ja) | 半導体装置およびその製造方法 | |
JP2014215485A5 (de) | ||
TW200744125A (en) | Metal oxide semiconductor transistor and method of manufacturing thereof | |
JP2014204041A5 (de) |