ATE414318T1 - Statische direktzugriffspeicherzelle (sram) und speichereinheit die diese enthält mit extrem niedrigem leistungsverbrauch - Google Patents

Statische direktzugriffspeicherzelle (sram) und speichereinheit die diese enthält mit extrem niedrigem leistungsverbrauch

Info

Publication number
ATE414318T1
ATE414318T1 AT04290885T AT04290885T ATE414318T1 AT E414318 T1 ATE414318 T1 AT E414318T1 AT 04290885 T AT04290885 T AT 04290885T AT 04290885 T AT04290885 T AT 04290885T AT E414318 T1 ATE414318 T1 AT E414318T1
Authority
AT
Austria
Prior art keywords
random access
static random
access memory
sram
storage unit
Prior art date
Application number
AT04290885T
Other languages
English (en)
Inventor
Amara Amara
Olivier Thomas
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE414318T1 publication Critical patent/ATE414318T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
AT04290885T 2003-04-02 2004-04-02 Statische direktzugriffspeicherzelle (sram) und speichereinheit die diese enthält mit extrem niedrigem leistungsverbrauch ATE414318T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0304127A FR2853445B1 (fr) 2003-04-02 2003-04-02 Cellule memoire statique a acces aleatoire(sram), et unite memoire a ultra basse consommation realisee a partir de telles cellules

Publications (1)

Publication Number Publication Date
ATE414318T1 true ATE414318T1 (de) 2008-11-15

Family

ID=32843132

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04290885T ATE414318T1 (de) 2003-04-02 2004-04-02 Statische direktzugriffspeicherzelle (sram) und speichereinheit die diese enthält mit extrem niedrigem leistungsverbrauch

Country Status (4)

Country Link
EP (1) EP1465200B1 (de)
AT (1) ATE414318T1 (de)
DE (1) DE602004017664D1 (de)
FR (1) FR2853445B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2898432B1 (fr) 2006-03-10 2008-04-11 Commissariat Energie Atomique Cellules memoire en technologie cmos double-grille dotee de transistors a deux grilles independantes
FR2910999B1 (fr) 2006-12-28 2009-04-03 Commissariat Energie Atomique Cellule memoire dotee de transistors double-grille, a grilles independantes et asymetriques
FR2911004B1 (fr) 2006-12-28 2009-05-15 Commissariat Energie Atomique Procede de realisation de transistors a double-grille asymetriques permettant la realisation de transistors a double-grille asymetriques et symetriques sur un meme substrat
US7995251B2 (en) 2007-03-30 2011-08-09 Ricoh Company, Limited Optical scanning device, optical scanning method, and image forming apparatus
FR2921508A1 (fr) 2007-09-24 2009-03-27 Commissariat Energie Atomique Memoire sram a cellule de reference de polarisation
TWI423258B (zh) * 2009-02-13 2014-01-11 寫入操作時提高寫入用字元線電壓位準之雙埠靜態隨機存取記憶體
US8213219B2 (en) * 2009-07-29 2012-07-03 GlobalFoundries, Inc. Transistor-based memory cell and related operating methods
FR2958077B1 (fr) * 2010-03-26 2013-11-15 Commissariat Energie Atomique Cellule memoire sram a quatre transistors munis d'une contre-electrode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5943258A (en) * 1997-12-24 1999-08-24 Texas Instruments Incorporated Memory with storage cells having SOI drive and access transistors with tied floating body connections
US6442060B1 (en) * 2000-05-09 2002-08-27 Monolithic System Technology, Inc. High-density ratio-independent four-transistor RAM cell fabricated with a conventional logic process
US6731533B2 (en) * 2000-10-31 2004-05-04 Texas Instruments Incorporated Loadless 4T SRAM cell with PMOS drivers
US20020112137A1 (en) * 2000-12-31 2002-08-15 Texas Instruments Incorporated Partial trench body ties in sram cell
JP2002246600A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
DE602004017664D1 (de) 2008-12-24
FR2853445B1 (fr) 2005-10-14
EP1465200B1 (de) 2008-11-12
FR2853445A1 (fr) 2004-10-08
EP1465200A1 (de) 2004-10-06

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Legal Events

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