ATE131308T1 - Cmos-vorladungs- und ausgleichsschaltung. - Google Patents
Cmos-vorladungs- und ausgleichsschaltung.Info
- Publication number
- ATE131308T1 ATE131308T1 AT91300349T AT91300349T ATE131308T1 AT E131308 T1 ATE131308 T1 AT E131308T1 AT 91300349 T AT91300349 T AT 91300349T AT 91300349 T AT91300349 T AT 91300349T AT E131308 T1 ATE131308 T1 AT E131308T1
- Authority
- AT
- Austria
- Prior art keywords
- precharge
- equalization circuit
- cmos
- pair
- equalization
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/480,401 US5036492A (en) | 1990-02-15 | 1990-02-15 | CMOS precharge and equalization circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE131308T1 true ATE131308T1 (de) | 1995-12-15 |
Family
ID=23907823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT91300349T ATE131308T1 (de) | 1990-02-15 | 1991-01-17 | Cmos-vorladungs- und ausgleichsschaltung. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5036492A (de) |
| EP (1) | EP0442610B1 (de) |
| JP (1) | JP2660454B2 (de) |
| AT (1) | ATE131308T1 (de) |
| DE (1) | DE69115075T2 (de) |
| ES (1) | ES2081425T3 (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2825291B2 (ja) * | 1989-11-13 | 1998-11-18 | 株式会社東芝 | 半導体記憶装置 |
| KR940007000B1 (ko) * | 1991-05-24 | 1994-08-03 | 삼성전자 주식회사 | 개선된 라이트 동작을 가지는 반도체 메모리 장치 |
| KR940001644B1 (ko) * | 1991-05-24 | 1994-02-28 | 삼성전자 주식회사 | 메모리 장치의 입출력 라인 프리차아지 방법 |
| US5325338A (en) * | 1991-09-04 | 1994-06-28 | Advanced Micro Devices, Inc. | Dual port memory, such as used in color lookup tables for video systems |
| US5355343A (en) * | 1992-09-23 | 1994-10-11 | Shu Lee Lean | Static random access memory with self timed bit line equalization |
| US5339274A (en) * | 1992-10-30 | 1994-08-16 | International Business Machines Corporation | Variable bitline precharge voltage sensing technique for DRAM structures |
| JP3088232B2 (ja) * | 1994-01-11 | 2000-09-18 | 沖電気工業株式会社 | 半導体記憶回路 |
| KR100543200B1 (ko) * | 1998-06-15 | 2006-04-12 | 주식회사 하이닉스반도체 | 스태틱램의 비트라인 클램핑회로 |
| KR100279058B1 (ko) * | 1998-07-13 | 2001-01-15 | 윤종용 | 낮은 전원 전압 하에서 고속 쓰기/읽기 동작을 수행하는 반도체메모리 장치 |
| JP4912621B2 (ja) * | 2005-06-07 | 2012-04-11 | 富士通株式会社 | 半導体装置及び半導体装置の配線方法 |
| US7564728B2 (en) | 2005-09-29 | 2009-07-21 | Hynix Semiconductor, Inc. | Semiconductor memory device and its driving method |
| US7986577B2 (en) * | 2007-03-19 | 2011-07-26 | Hynix Semiconductor Inc. | Precharge voltage supplying circuit |
| TWI334604B (en) * | 2007-06-25 | 2010-12-11 | Ind Tech Res Inst | Sensing circuits of phase change memory |
| JP2014149884A (ja) * | 2013-01-31 | 2014-08-21 | Micron Technology Inc | 半導体装置 |
| GB2525904B (en) | 2014-05-08 | 2018-05-09 | Surecore Ltd | Memory unit |
| CN115565567A (zh) * | 2021-07-02 | 2023-01-03 | 长鑫存储技术有限公司 | 读出电路结构 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4494221A (en) * | 1982-03-03 | 1985-01-15 | Inmos Corporation | Bit line precharging and equilibrating circuit |
| US4791613A (en) * | 1983-09-21 | 1988-12-13 | Inmos Corporation | Bit line and column circuitry used in a semiconductor memory |
| US4639898A (en) * | 1984-12-21 | 1987-01-27 | Rca Corporation | Bit-line pull-up circuit |
| JPH0664907B2 (ja) * | 1985-06-26 | 1994-08-22 | 株式会社日立製作所 | ダイナミツク型ｒａｍ |
| JPS62114190A (ja) * | 1985-11-13 | 1987-05-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US4712193A (en) * | 1985-11-21 | 1987-12-08 | Motorola, Inc. | Current steering differential write circuit for memory cells |
| JP2615011B2 (ja) * | 1986-06-13 | 1997-05-28 | 株式会社日立製作所 | 半導体記憶回路 |
| JP2644261B2 (ja) * | 1988-03-15 | 1997-08-25 | 株式会社東芝 | ダイナミック型半導体記憶装置 |
| JPH02198097A (ja) * | 1989-01-25 | 1990-08-06 | Nec Ic Microcomput Syst Ltd | 半導体スタチックメモリ |
-
1990
- 1990-02-15 US US07/480,401 patent/US5036492A/en not_active Expired - Lifetime
-
1991
- 1991-01-17 ES ES91300349T patent/ES2081425T3/es not_active Expired - Lifetime
- 1991-01-17 AT AT91300349T patent/ATE131308T1/de not_active IP Right Cessation
- 1991-01-17 EP EP91300349A patent/EP0442610B1/de not_active Expired - Lifetime
- 1991-01-17 DE DE69115075T patent/DE69115075T2/de not_active Expired - Fee Related
- 1991-02-14 JP JP3020900A patent/JP2660454B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2660454B2 (ja) | 1997-10-08 |
| JPH04214294A (ja) | 1992-08-05 |
| EP0442610A3 (en) | 1993-05-05 |
| US5036492A (en) | 1991-07-30 |
| EP0442610B1 (de) | 1995-12-06 |
| DE69115075D1 (de) | 1996-01-18 |
| DE69115075T2 (de) | 1996-06-27 |
| ES2081425T3 (es) | 1996-03-16 |
| EP0442610A2 (de) | 1991-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification | ||
| REN | Ceased due to non-payment of the annual fee |